JPS5235587A - Electric or electronic element - Google Patents

Electric or electronic element

Info

Publication number
JPS5235587A
JPS5235587A JP51098553A JP9855376A JPS5235587A JP S5235587 A JPS5235587 A JP S5235587A JP 51098553 A JP51098553 A JP 51098553A JP 9855376 A JP9855376 A JP 9855376A JP S5235587 A JPS5235587 A JP S5235587A
Authority
JP
Japan
Prior art keywords
electric
electronic element
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51098553A
Other languages
English (en)
Japanese (ja)
Inventor
Andoriyuu Baarou Uiriamu
Oouen Jiyofurei
Guuin Robaatsu Gareesu
Sutamufuoodo Binsetsuto Pooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Publication of JPS5235587A publication Critical patent/JPS5235587A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP51098553A 1975-08-18 1976-08-18 Electric or electronic element Pending JPS5235587A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB34263/75A GB1572181A (en) 1975-08-18 1975-08-18 Device comprising a thin film of organic materila

Publications (1)

Publication Number Publication Date
JPS5235587A true JPS5235587A (en) 1977-03-18

Family

ID=10363472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51098553A Pending JPS5235587A (en) 1975-08-18 1976-08-18 Electric or electronic element

Country Status (5)

Country Link
JP (1) JPS5235587A (fi)
DE (1) DE2637206A1 (fi)
FR (1) FR2321769A1 (fi)
GB (1) GB1572181A (fi)
NL (1) NL7609163A (fi)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216515A (ja) * 1984-04-12 1985-10-30 Matsushita Electric Ind Co Ltd 有機磁性薄膜およびその製造方法
JPS60239712A (ja) * 1984-05-15 1985-11-28 Canon Inc 表示媒体
JPS6137858A (ja) * 1984-07-31 1986-02-22 Canon Inc 電界発光素子
JPS6137888A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS6137883A (ja) * 1984-07-31 1986-02-22 Canon Inc 電界発光素子
JPS6137887A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS6137889A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
US4647518A (en) * 1984-04-20 1987-03-03 Canon Kabushiki Kaisha Light-emitting display component and method for light-emitting display using the same
US4714838A (en) * 1986-10-31 1987-12-22 Minnesota Mining And Manufacturing Company Second harmonic generation with N,N'-substituted barbituric acids
US4757364A (en) * 1985-03-26 1988-07-12 Kabushiki Kaisha Toshiba Light emitting element
US4773742A (en) * 1984-05-15 1988-09-27 Canon Kabushiki Kaisha Display method with fatly acid ester host molecule
JPH02191694A (ja) * 1989-01-20 1990-07-27 Idemitsu Kosan Co Ltd 薄膜有機ｅｌ素子
JPH02209988A (ja) * 1989-02-10 1990-08-21 Idemitsu Kosan Co Ltd 薄膜エレクトロルミネッセンス素子
JPH03105896A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd Ｅｌ発光体

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1085947A (en) * 1977-08-02 1980-09-16 Ching W. Tang Multilayer organic photovoltaic elements
EP0076060B1 (en) * 1981-09-25 1986-12-17 Imperial Chemical Industries Plc Method of applying thin films to substrates
GB2117669A (en) * 1982-03-05 1983-10-19 Nat Res Dev Polymeric films
US4819057A (en) * 1985-09-30 1989-04-04 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
GB8527213D0 (en) * 1985-11-05 1985-12-11 British Petroleum Co Plc Separation process
EP0237017B1 (en) * 1986-03-11 1995-09-06 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
JPH0770708B2 (ja) * 1986-03-25 1995-07-31 株式会社東芝 電界効果トランジスタ
CA1256592A (en) * 1986-04-01 1989-06-27 Masakazu Uekita Electric-electronic device including polyimide thin film
US4939556A (en) * 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
FI77679C (fi) * 1987-02-23 1989-04-10 K & V Licencing Oy Filmaggregat och foerfarande foer dess framstaellning.
JPH02501609A (ja) * 1987-10-09 1990-05-31 ヒューズ・エアクラフト・カンパニー ラングミュア・ブロジェット絶縁層を有するＧａＡｓ電気回路装置
WO1990005998A1 (en) * 1988-11-21 1990-05-31 Mitsui Toatsu Chemicals, Inc. Light-emitting element
US5006915A (en) * 1989-02-14 1991-04-09 Ricoh Company, Ltd. Electric device and photoelectric conversion device comprising the same
US7186380B2 (en) * 2002-07-01 2007-03-06 Hewlett-Packard Development Company, L.P. Transistor and sensors made from molecular materials with electric dipoles

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2153441A1 (de) * 1971-10-27 1973-05-10 Licentia Gmbh Verfahren zum herstellen eines halbleiterbauelementes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PROC ROY SOC=1939GB *
THIN SOLID FILMS=1975 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216515A (ja) * 1984-04-12 1985-10-30 Matsushita Electric Ind Co Ltd 有機磁性薄膜およびその製造方法
US4647518A (en) * 1984-04-20 1987-03-03 Canon Kabushiki Kaisha Light-emitting display component and method for light-emitting display using the same
JPS60239712A (ja) * 1984-05-15 1985-11-28 Canon Inc 表示媒体
US4773742A (en) * 1984-05-15 1988-09-27 Canon Kabushiki Kaisha Display method with fatly acid ester host molecule
JPS6137889A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS6137887A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPH0446312B2 (fi) * 1984-07-31 1992-07-29 Canon Kk
JPS6137883A (ja) * 1984-07-31 1986-02-22 Canon Inc 電界発光素子
JPS6137888A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS6137858A (ja) * 1984-07-31 1986-02-22 Canon Inc 電界発光素子
JPH0446315B2 (fi) * 1984-07-31 1992-07-29 Canon Kk
JPH0446313B2 (fi) * 1984-07-31 1992-07-29 Canon Kk
JPH0446311B2 (fi) * 1984-07-31 1992-07-29 Canon Kk
JPH0446314B2 (fi) * 1984-07-31 1992-07-29 Canon Kk
US4757364A (en) * 1985-03-26 1988-07-12 Kabushiki Kaisha Toshiba Light emitting element
US4714838A (en) * 1986-10-31 1987-12-22 Minnesota Mining And Manufacturing Company Second harmonic generation with N,N'-substituted barbituric acids
JPH02191694A (ja) * 1989-01-20 1990-07-27 Idemitsu Kosan Co Ltd 薄膜有機ｅｌ素子
JPH02209988A (ja) * 1989-02-10 1990-08-21 Idemitsu Kosan Co Ltd 薄膜エレクトロルミネッセンス素子
JPH03105896A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd Ｅｌ発光体

Also Published As

Publication number Publication date
DE2637206A1 (de) 1977-03-10
GB1572181A (en) 1980-07-23
NL7609163A (nl) 1977-02-22
FR2321769B1 (fi) 1982-10-29
FR2321769A1 (fr) 1977-03-18

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