JPS5233042B1 - - Google Patents
Info
- Publication number
- JPS5233042B1 JPS5233042B1 JP47028879A JP2887972A JPS5233042B1 JP S5233042 B1 JPS5233042 B1 JP S5233042B1 JP 47028879 A JP47028879 A JP 47028879A JP 2887972 A JP2887972 A JP 2887972A JP S5233042 B1 JPS5233042 B1 JP S5233042B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2113720A DE2113720C3 (de) | 1971-03-22 | 1971-03-22 | Verfahren zur Durchmesserregelung beim tiegellosen Zonenschmelzen von Halbleiterstäben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5233042B1 true JPS5233042B1 (fr) | 1977-08-25 |
Family
ID=5802339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47028879A Pending JPS5233042B1 (fr) | 1971-03-22 | 1972-03-22 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3757071A (fr) |
| JP (1) | JPS5233042B1 (fr) |
| BE (1) | BE781067A (fr) |
| CA (1) | CA970255A (fr) |
| CH (1) | CH538885A (fr) |
| DE (1) | DE2113720C3 (fr) |
| DK (1) | DK140822B (fr) |
| FR (1) | FR2130453B1 (fr) |
| GB (1) | GB1373718A (fr) |
| IT (1) | IT962055B (fr) |
| NL (1) | NL7115341A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58174897U (ja) * | 1978-03-30 | 1983-11-22 | ヴァーモント インダストリーズ インコーポレーテッド | ガス放電ランプ用高効率安定化装置 |
| JP2014240338A (ja) * | 2013-06-12 | 2014-12-25 | 信越半導体株式会社 | 半導体単結晶棒の製造方法 |
| JP2017193461A (ja) * | 2016-04-20 | 2017-10-26 | 株式会社Sumco | 単結晶の製造方法および装置 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2332968C3 (de) * | 1973-06-28 | 1981-12-10 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes |
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
| US4866230A (en) * | 1987-04-27 | 1989-09-12 | Shin-Etu Handotai Company, Limited | Method of and apparatus for controlling floating zone of semiconductor rod |
| JPH0651599B2 (ja) * | 1987-12-05 | 1994-07-06 | 信越半導体株式会社 | 浮遊帯域制御方法 |
| IL163974A0 (en) * | 2003-09-10 | 2005-12-18 | Dana Corp | Method for monitoring the performance of a magnetic pulse forming or welding process |
| DE102012108009B4 (de) * | 2012-08-30 | 2016-09-01 | Topsil Semiconductor Materials A/S | Modellprädiktive Regelung des Zonenschmelz-Verfahrens |
-
1971
- 1971-03-22 DE DE2113720A patent/DE2113720C3/de not_active Expired
- 1971-11-02 CH CH1591771A patent/CH538885A/de not_active IP Right Cessation
- 1971-11-08 NL NL7115341A patent/NL7115341A/xx unknown
-
1972
- 1972-01-25 GB GB335972A patent/GB1373718A/en not_active Expired
- 1972-03-02 US US00231182A patent/US3757071A/en not_active Expired - Lifetime
- 1972-03-17 IT IT22005/72A patent/IT962055B/it active
- 1972-03-20 FR FR7209619A patent/FR2130453B1/fr not_active Expired
- 1972-03-21 DK DK132072AA patent/DK140822B/da not_active IP Right Cessation
- 1972-03-21 CA CA137,620A patent/CA970255A/en not_active Expired
- 1972-03-22 BE BE781067A patent/BE781067A/fr unknown
- 1972-03-22 JP JP47028879A patent/JPS5233042B1/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58174897U (ja) * | 1978-03-30 | 1983-11-22 | ヴァーモント インダストリーズ インコーポレーテッド | ガス放電ランプ用高効率安定化装置 |
| JP2014240338A (ja) * | 2013-06-12 | 2014-12-25 | 信越半導体株式会社 | 半導体単結晶棒の製造方法 |
| JP2017193461A (ja) * | 2016-04-20 | 2017-10-26 | 株式会社Sumco | 単結晶の製造方法および装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CH538885A (de) | 1973-07-15 |
| DE2113720C3 (de) | 1980-09-11 |
| DE2113720B2 (de) | 1980-01-10 |
| BE781067A (fr) | 1972-07-17 |
| DE2113720A1 (de) | 1972-09-28 |
| DK140822B (da) | 1979-11-26 |
| IT962055B (it) | 1973-12-20 |
| GB1373718A (en) | 1974-11-13 |
| CA970255A (en) | 1975-07-01 |
| DK140822C (fr) | 1980-05-12 |
| FR2130453B1 (fr) | 1975-04-11 |
| US3757071A (en) | 1973-09-04 |
| FR2130453A1 (fr) | 1972-11-03 |
| NL7115341A (fr) | 1972-09-26 |