JPS5231663A - Formation method of multicrystal silicon base plate - Google Patents
Formation method of multicrystal silicon base plateInfo
- Publication number
- JPS5231663A JPS5231663A JP10697175A JP10697175A JPS5231663A JP S5231663 A JPS5231663 A JP S5231663A JP 10697175 A JP10697175 A JP 10697175A JP 10697175 A JP10697175 A JP 10697175A JP S5231663 A JPS5231663 A JP S5231663A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- formation method
- silicon base
- multicrystal silicon
- multicrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10697175A JPS5231663A (en) | 1975-09-05 | 1975-09-05 | Formation method of multicrystal silicon base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10697175A JPS5231663A (en) | 1975-09-05 | 1975-09-05 | Formation method of multicrystal silicon base plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5231663A true JPS5231663A (en) | 1977-03-10 |
Family
ID=14447178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10697175A Pending JPS5231663A (en) | 1975-09-05 | 1975-09-05 | Formation method of multicrystal silicon base plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5231663A (ja) |
-
1975
- 1975-09-05 JP JP10697175A patent/JPS5231663A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5224478A (en) | Semiconductor device manufacturing process | |
| JPS5267969A (en) | Manufacture of semiconductor unit | |
| JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
| JPS5231663A (en) | Formation method of multicrystal silicon base plate | |
| JPS5245868A (en) | Process for production of plate-from silicone | |
| JPS52142972A (en) | Semiconductor production device | |
| JPS52131454A (en) | Thermal treating method of wafer | |
| JPS5244169A (en) | Process for production of semiconductor device | |
| JPS5244795A (en) | Formation of silicon nitride film | |
| JPS5218169A (en) | Production method of semiconductor | |
| JPS5421264A (en) | Forming method of semiconductor surface magnetization | |
| JPS5357776A (en) | Formation method of silicon oxide film | |
| JPS5269571A (en) | Thermal oxidation method for semiconductor wafer | |
| JPS5247370A (en) | Diffusion method | |
| JPS51151081A (en) | Mos type semiconductor apparatus and that manufacturing method | |
| JPS5251872A (en) | Production of semiconductor device | |
| JPS51112277A (en) | Semiconductor device and its production method | |
| JPS543473A (en) | Manufacture of semiconductor device | |
| JPS5276881A (en) | Formation of mask by nitride silicon film in production process of sem iconductor | |
| JPS533066A (en) | Electrode formation method | |
| JPS51145277A (en) | Manufacture of silicon crystal substratum | |
| JPS525700A (en) | The process for production of silicon nitride | |
| JPS5269561A (en) | Electrode of semiconductor device | |
| JPS54118168A (en) | Manufacture of semiconductor device | |
| JPS53142870A (en) | Manufacture for semiconductor device |