JPS5218097B2 - - Google Patents
Info
- Publication number
- JPS5218097B2 JPS5218097B2 JP48017558A JP1755873A JPS5218097B2 JP S5218097 B2 JPS5218097 B2 JP S5218097B2 JP 48017558 A JP48017558 A JP 48017558A JP 1755873 A JP1755873 A JP 1755873A JP S5218097 B2 JPS5218097 B2 JP S5218097B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymerisation Methods In General (AREA)
- ing And Chemical Polishing (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23787572A | 1972-03-24 | 1972-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4915372A JPS4915372A (cg-RX-API-DMAC10.html) | 1974-02-09 |
| JPS5218097B2 true JPS5218097B2 (cg-RX-API-DMAC10.html) | 1977-05-19 |
Family
ID=22895609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48017558A Expired JPS5218097B2 (cg-RX-API-DMAC10.html) | 1972-03-24 | 1973-02-14 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3779806A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5218097B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1010401A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2314124C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2177766B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1370403A (cg-RX-API-DMAC10.html) |
| IT (1) | IT981198B (cg-RX-API-DMAC10.html) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4113897A (en) * | 1973-01-29 | 1978-09-12 | Rca Corporation | Smooth groove formation method employing spin coating of negative replica of inscribed disc |
| US3893127A (en) * | 1973-09-27 | 1975-07-01 | Rca Corp | Electron beam recording media |
| US3934057A (en) * | 1973-12-19 | 1976-01-20 | International Business Machines Corporation | High sensitivity positive resist layers and mask formation process |
| US3996393A (en) * | 1974-03-25 | 1976-12-07 | International Business Machines Corporation | Positive polymeric electron beam resists of very great sensitivity |
| US3987215A (en) * | 1974-04-22 | 1976-10-19 | International Business Machines Corporation | Resist mask formation process |
| US4078098A (en) * | 1974-05-28 | 1978-03-07 | International Business Machines Corporation | High energy radiation exposed positive resist mask process |
| US3976524A (en) * | 1974-06-17 | 1976-08-24 | Ibm Corporation | Planarization of integrated circuit surfaces through selective photoresist masking |
| US4011351A (en) * | 1975-01-29 | 1977-03-08 | International Business Machines Corporation | Preparation of resist image with methacrylate polymers |
| JPS51147324A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Solvent for electronic wire resist |
| JPS524834A (en) * | 1975-06-30 | 1977-01-14 | Agency Of Ind Science & Technol | Image formation method through electron beam and resisting agent compo sitions which are used for the methoi |
| JPS5271239A (en) * | 1975-12-10 | 1977-06-14 | Matsushita Electric Ind Co Ltd | Electron beam sensitive material |
| US4103064A (en) * | 1976-01-09 | 1978-07-25 | Dios, Inc. | Microdevice substrate and method for making micropattern devices |
| JPS5293332A (en) * | 1976-02-02 | 1977-08-05 | Agency Of Ind Science & Technol | Polymer materials for electronic irradiation resist |
| JPS5350681A (en) * | 1976-10-19 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Solvent for electron beam resist |
| JPS5352593A (en) * | 1976-10-26 | 1978-05-13 | Agency Of Ind Science & Technol | Electron rays-sensitive polymer |
| EP0016679B1 (fr) * | 1979-03-09 | 1982-06-09 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
| JPS5857734B2 (ja) * | 1979-05-15 | 1983-12-21 | 超エル・エス・アイ技術研究組合 | 皮膜形成方法法 |
| US4338392A (en) * | 1979-08-09 | 1982-07-06 | International Business Machines Corporation | Class of E-beam resists based on conducting organic charge transfer salts |
| US4312935A (en) * | 1979-08-09 | 1982-01-26 | International Business Machines Corporation | Class of E-beam resists based on conducting organic charge transfer salts |
| US4312936A (en) * | 1979-08-09 | 1982-01-26 | International Business Machines Corporation | Class of E-beam resists based on conducting organic charge transfer salts |
| JPS5639539A (en) * | 1979-09-07 | 1981-04-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Pattern forming method |
| US4415653A (en) * | 1981-05-07 | 1983-11-15 | Honeywell Inc. | Method of making sensitive positive electron beam resists |
| US4508812A (en) * | 1984-05-03 | 1985-04-02 | Hughes Aircraft Company | Method of applying poly(methacrylic anhydride resist to a semiconductor |
| JPS6221151A (ja) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| JPH0816784B2 (ja) * | 1989-09-27 | 1996-02-21 | 工業技術院物質工学工業技術研究所長 | 感可視光樹脂組成物 |
| US6632590B1 (en) | 2000-07-14 | 2003-10-14 | Taiwan Semiconductor Manufacturing Company | Enhance the process window of memory cell line/space dense pattern in sub-wavelength process |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3392051A (en) * | 1964-06-08 | 1968-07-09 | Ibm | Method for forming thin film electrical circuit elements by preferential nucleation techniques |
| US3436468A (en) * | 1965-05-28 | 1969-04-01 | Texas Instruments Inc | Plastic bodies having regions of altered chemical structure and method of making same |
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| DE1614635A1 (de) * | 1967-10-23 | 1970-03-26 | Siemens Ag | Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke |
| GB1237433A (en) * | 1968-06-06 | 1971-06-30 | Standard Telephones Cables Ltd | Improvements in or relating to photolithographic masks |
| US3696742A (en) * | 1969-10-06 | 1972-10-10 | Monsanto Res Corp | Method of making a stencil for screen-printing using a laser beam |
-
1972
- 1972-03-24 US US00237875A patent/US3779806A/en not_active Expired - Lifetime
-
1973
- 1973-01-31 GB GB474473A patent/GB1370403A/en not_active Expired
- 1973-02-08 CA CA163,468A patent/CA1010401A/en not_active Expired
- 1973-02-14 JP JP48017558A patent/JPS5218097B2/ja not_active Expired
- 1973-02-20 FR FR7306798A patent/FR2177766B1/fr not_active Expired
- 1973-03-08 IT IT21308/73A patent/IT981198B/it active
- 1973-03-21 DE DE2314124A patent/DE2314124C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4915372A (cg-RX-API-DMAC10.html) | 1974-02-09 |
| DE2314124B2 (de) | 1980-11-13 |
| FR2177766A1 (cg-RX-API-DMAC10.html) | 1973-11-09 |
| DE2314124C3 (de) | 1981-06-25 |
| GB1370403A (en) | 1974-10-16 |
| US3779806A (en) | 1973-12-18 |
| IT981198B (it) | 1974-10-10 |
| DE2314124A1 (de) | 1973-10-04 |
| CA1010401A (en) | 1977-05-17 |
| FR2177766B1 (cg-RX-API-DMAC10.html) | 1983-06-10 |