JPS4915372A - - Google Patents

Info

Publication number
JPS4915372A
JPS4915372A JP48017558A JP1755873A JPS4915372A JP S4915372 A JPS4915372 A JP S4915372A JP 48017558 A JP48017558 A JP 48017558A JP 1755873 A JP1755873 A JP 1755873A JP S4915372 A JPS4915372 A JP S4915372A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48017558A
Other languages
Japanese (ja)
Other versions
JPS5218097B2 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4915372A publication Critical patent/JPS4915372A/ja
Publication of JPS5218097B2 publication Critical patent/JPS5218097B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Polymerisation Methods In General (AREA)
  • ing And Chemical Polishing (AREA)
  • Materials For Photolithography (AREA)
JP48017558A 1972-03-24 1973-02-14 Expired JPS5218097B2 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23787572A 1972-03-24 1972-03-24

Publications (2)

Publication Number Publication Date
JPS4915372A true JPS4915372A (cg-RX-API-DMAC10.html) 1974-02-09
JPS5218097B2 JPS5218097B2 (cg-RX-API-DMAC10.html) 1977-05-19

Family

ID=22895609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48017558A Expired JPS5218097B2 (cg-RX-API-DMAC10.html) 1972-03-24 1973-02-14

Country Status (7)

Country Link
US (1) US3779806A (cg-RX-API-DMAC10.html)
JP (1) JPS5218097B2 (cg-RX-API-DMAC10.html)
CA (1) CA1010401A (cg-RX-API-DMAC10.html)
DE (1) DE2314124C3 (cg-RX-API-DMAC10.html)
FR (1) FR2177766B1 (cg-RX-API-DMAC10.html)
GB (1) GB1370403A (cg-RX-API-DMAC10.html)
IT (1) IT981198B (cg-RX-API-DMAC10.html)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147324A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Solvent for electronic wire resist
JPS5271239A (en) * 1975-12-10 1977-06-14 Matsushita Electric Ind Co Ltd Electron beam sensitive material
JPS5293332A (en) * 1976-02-02 1977-08-05 Agency Of Ind Science & Technol Polymer materials for electronic irradiation resist
JPS5350681A (en) * 1976-10-19 1978-05-09 Matsushita Electric Ind Co Ltd Solvent for electron beam resist
JPS5352593A (en) * 1976-10-26 1978-05-13 Agency Of Ind Science & Technol Electron rays-sensitive polymer
JPS55151637A (en) * 1979-05-15 1980-11-26 Chiyou Lsi Gijutsu Kenkyu Kumiai Radiation sensitive material and film forming method
JPS5639539A (en) * 1979-09-07 1981-04-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern forming method
JPH03113449A (ja) * 1989-09-27 1991-05-14 Agency Of Ind Science & Technol 感可視光樹脂組成物

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4113897A (en) * 1973-01-29 1978-09-12 Rca Corporation Smooth groove formation method employing spin coating of negative replica of inscribed disc
US3893127A (en) * 1973-09-27 1975-07-01 Rca Corp Electron beam recording media
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process
US3996393A (en) * 1974-03-25 1976-12-07 International Business Machines Corporation Positive polymeric electron beam resists of very great sensitivity
US3987215A (en) * 1974-04-22 1976-10-19 International Business Machines Corporation Resist mask formation process
US4078098A (en) * 1974-05-28 1978-03-07 International Business Machines Corporation High energy radiation exposed positive resist mask process
US3976524A (en) * 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
JPS524834A (en) * 1975-06-30 1977-01-14 Agency Of Ind Science & Technol Image formation method through electron beam and resisting agent compo sitions which are used for the methoi
US4103064A (en) * 1976-01-09 1978-07-25 Dios, Inc. Microdevice substrate and method for making micropattern devices
EP0016679B1 (fr) * 1979-03-09 1982-06-09 Thomson-Csf Substances de photomasquage, leur procédé de préparation, et masque obtenu
US4338392A (en) * 1979-08-09 1982-07-06 International Business Machines Corporation Class of E-beam resists based on conducting organic charge transfer salts
US4312935A (en) * 1979-08-09 1982-01-26 International Business Machines Corporation Class of E-beam resists based on conducting organic charge transfer salts
US4312936A (en) * 1979-08-09 1982-01-26 International Business Machines Corporation Class of E-beam resists based on conducting organic charge transfer salts
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
US4508812A (en) * 1984-05-03 1985-04-02 Hughes Aircraft Company Method of applying poly(methacrylic anhydride resist to a semiconductor
JPS6221151A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd パタ−ン形成方法
US6632590B1 (en) 2000-07-14 2003-10-14 Taiwan Semiconductor Manufacturing Company Enhance the process window of memory cell line/space dense pattern in sub-wavelength process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3392051A (en) * 1964-06-08 1968-07-09 Ibm Method for forming thin film electrical circuit elements by preferential nucleation techniques
US3436468A (en) * 1965-05-28 1969-04-01 Texas Instruments Inc Plastic bodies having regions of altered chemical structure and method of making same
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
DE1614635A1 (de) * 1967-10-23 1970-03-26 Siemens Ag Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke
GB1237433A (en) * 1968-06-06 1971-06-30 Standard Telephones Cables Ltd Improvements in or relating to photolithographic masks
US3696742A (en) * 1969-10-06 1972-10-10 Monsanto Res Corp Method of making a stencil for screen-printing using a laser beam

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147324A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Solvent for electronic wire resist
JPS5271239A (en) * 1975-12-10 1977-06-14 Matsushita Electric Ind Co Ltd Electron beam sensitive material
JPS5293332A (en) * 1976-02-02 1977-08-05 Agency Of Ind Science & Technol Polymer materials for electronic irradiation resist
JPS5350681A (en) * 1976-10-19 1978-05-09 Matsushita Electric Ind Co Ltd Solvent for electron beam resist
JPS5352593A (en) * 1976-10-26 1978-05-13 Agency Of Ind Science & Technol Electron rays-sensitive polymer
JPS55151637A (en) * 1979-05-15 1980-11-26 Chiyou Lsi Gijutsu Kenkyu Kumiai Radiation sensitive material and film forming method
JPS5639539A (en) * 1979-09-07 1981-04-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern forming method
JPH03113449A (ja) * 1989-09-27 1991-05-14 Agency Of Ind Science & Technol 感可視光樹脂組成物

Also Published As

Publication number Publication date
DE2314124B2 (de) 1980-11-13
FR2177766A1 (cg-RX-API-DMAC10.html) 1973-11-09
DE2314124C3 (de) 1981-06-25
GB1370403A (en) 1974-10-16
US3779806A (en) 1973-12-18
JPS5218097B2 (cg-RX-API-DMAC10.html) 1977-05-19
IT981198B (it) 1974-10-10
DE2314124A1 (de) 1973-10-04
CA1010401A (en) 1977-05-17
FR2177766B1 (cg-RX-API-DMAC10.html) 1983-06-10

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