JPS5216973A - Epitachisial growing method of semiconductor of family chemical compou nd - Google Patents

Epitachisial growing method of semiconductor of family chemical compou nd

Info

Publication number
JPS5216973A
JPS5216973A JP9253975A JP9253975A JPS5216973A JP S5216973 A JPS5216973 A JP S5216973A JP 9253975 A JP9253975 A JP 9253975A JP 9253975 A JP9253975 A JP 9253975A JP S5216973 A JPS5216973 A JP S5216973A
Authority
JP
Japan
Prior art keywords
epitachisial
compou
semiconductor
growing method
family chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9253975A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5513575B2 (en:Method
Inventor
Isao Nakatani
Takeshi Masumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Institute for Metals filed Critical National Research Institute for Metals
Priority to JP9253975A priority Critical patent/JPS5216973A/ja
Publication of JPS5216973A publication Critical patent/JPS5216973A/ja
Publication of JPS5513575B2 publication Critical patent/JPS5513575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9253975A 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd Granted JPS5216973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9253975A JPS5216973A (en) 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9253975A JPS5216973A (en) 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd

Publications (2)

Publication Number Publication Date
JPS5216973A true JPS5216973A (en) 1977-02-08
JPS5513575B2 JPS5513575B2 (en:Method) 1980-04-10

Family

ID=14057165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9253975A Granted JPS5216973A (en) 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd

Country Status (1)

Country Link
JP (1) JPS5216973A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283404A (ja) * 1985-10-04 1987-04-16 Furukawa Electric Co Ltd:The 金属複合粉末の製造法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283404A (ja) * 1985-10-04 1987-04-16 Furukawa Electric Co Ltd:The 金属複合粉末の製造法

Also Published As

Publication number Publication date
JPS5513575B2 (en:Method) 1980-04-10

Similar Documents

Publication Publication Date Title
JPS5216973A (en) Epitachisial growing method of semiconductor of family chemical compou nd
JPS5423386A (en) Manufacture of semiconductor device
JPS538374A (en) Growing method for single crystal of semiconductor
JPS51146389A (en) Process for production of silver nitrate
JPS53142388A (en) Gas phase growth method for epitaxial layer
JPS5382263A (en) Epitaxial growth method
JPS5712827A (en) Manufacture of mo-bi-sb catalyst
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5214708A (en) Process for preparation of choline chloride
JPS5210072A (en) Method for growing epitaxial crystal
JPS52153374A (en) Vapor phase growth method for compound semiconductor of groups iii-v
JPS5260069A (en) Crystal growth
JPS5264271A (en) Semiconductor producing device
JPS53148278A (en) Method and apparatus of vapor phase growth of compound semiconductor crystals
JPS52116786A (en) Production of gallium compound crystal
JPS5267259A (en) Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5216974A (en) Method of manufacturing air phase epitachisial growing layer of chemic al compound semiconductor
JPS5278859A (en) Preparation of 2,3-epoxy-2,3-dihydro-1,4-naphthoquinone
JPS5653652A (en) Preparation of indole or indole derivative
JPS535967A (en) Method and device for forming thin film by vapor-phase reaction
JPS53145565A (en) Production appararus of semiconductor crystals
JPS5244166A (en) Method of growing semiconductor
JPS524782A (en) Liquid phase epitaxial growth method
JPS5376980A (en) Gas phase growth method of compound semiconductor
JPS5212107A (en) Process for preparation of farnesol or its 10,11-isopropylidenedioxy d erivative