JPS5513575B2 - - Google Patents

Info

Publication number
JPS5513575B2
JPS5513575B2 JP9253975A JP9253975A JPS5513575B2 JP S5513575 B2 JPS5513575 B2 JP S5513575B2 JP 9253975 A JP9253975 A JP 9253975A JP 9253975 A JP9253975 A JP 9253975A JP S5513575 B2 JPS5513575 B2 JP S5513575B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9253975A
Other languages
Japanese (ja)
Other versions
JPS5216973A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9253975A priority Critical patent/JPS5216973A/ja
Publication of JPS5216973A publication Critical patent/JPS5216973A/ja
Publication of JPS5513575B2 publication Critical patent/JPS5513575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9253975A 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd Granted JPS5216973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9253975A JPS5216973A (en) 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9253975A JPS5216973A (en) 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd

Publications (2)

Publication Number Publication Date
JPS5216973A JPS5216973A (en) 1977-02-08
JPS5513575B2 true JPS5513575B2 (en:Method) 1980-04-10

Family

ID=14057165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9253975A Granted JPS5216973A (en) 1975-07-31 1975-07-31 Epitachisial growing method of semiconductor of family chemical compou nd

Country Status (1)

Country Link
JP (1) JPS5216973A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283404A (ja) * 1985-10-04 1987-04-16 Furukawa Electric Co Ltd:The 金属複合粉末の製造法

Also Published As

Publication number Publication date
JPS5216973A (en) 1977-02-08

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