JPS5214393A - Laser and optical detector - Google Patents

Laser and optical detector

Info

Publication number
JPS5214393A
JPS5214393A JP51084477A JP8447776A JPS5214393A JP S5214393 A JPS5214393 A JP S5214393A JP 51084477 A JP51084477 A JP 51084477A JP 8447776 A JP8447776 A JP 8447776A JP S5214393 A JPS5214393 A JP S5214393A
Authority
JP
Japan
Prior art keywords
laser
optical detector
detector
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51084477A
Other languages
English (en)
Japanese (ja)
Inventor
Henrii Yuuman Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Publication of JPS5214393A publication Critical patent/JPS5214393A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
JP51084477A 1975-07-16 1976-07-15 Laser and optical detector Pending JPS5214393A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB29810/75A GB1517537A (en) 1975-07-16 1975-07-16 Lasers and photo-detectors

Publications (1)

Publication Number Publication Date
JPS5214393A true JPS5214393A (en) 1977-02-03

Family

ID=10297543

Family Applications (2)

Application Number Title Priority Date Filing Date
JP51084477A Pending JPS5214393A (en) 1975-07-16 1976-07-15 Laser and optical detector
JP1985014598U Pending JPS60149156U (ja) 1975-07-16 1985-02-04 レ−ザ及び光検波器をもつた半導体光源

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1985014598U Pending JPS60149156U (ja) 1975-07-16 1985-02-04 レ−ザ及び光検波器をもつた半導体光源

Country Status (6)

Country Link
JP (2) JPS5214393A (enrdf_load_stackoverflow)
CA (1) CA1076237A (enrdf_load_stackoverflow)
DE (1) DE2632222A1 (enrdf_load_stackoverflow)
FR (1) FR2318505A1 (enrdf_load_stackoverflow)
GB (1) GB1517537A (enrdf_load_stackoverflow)
NL (1) NL185251C (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648193A (en) * 1979-09-18 1981-05-01 Xerox Corp Light controlled integrated current diode laser
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS57139984A (en) * 1981-02-24 1982-08-30 Nec Corp Buried photo emitting and receiving semiconductor integrated device
JPS5871676A (ja) * 1981-10-23 1983-04-28 Nec Corp 埋め込みへテロ構造半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5875877A (ja) * 1981-10-30 1983-05-07 Nec Corp モニタ内蔵半導体レ−ザ素子
JPS5875879A (ja) * 1981-10-29 1983-05-07 Nec Corp 光集積化素子
JPS5880887A (ja) * 1981-11-09 1983-05-16 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5884486A (ja) * 1981-11-13 1983-05-20 Nec Corp 半導体レ−ザ・フオトデイテクタ光集積化素子
JPS58162090A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2903554C2 (de) * 1979-01-31 1983-11-17 Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt Opto-Koppler zur opto-elektronischen Signalübertragung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1007876A (en) * 1963-08-15 1965-10-22 Mullard Ltd Improvements in and relating to opto-electronic semiconductor devices
GB1100682A (en) * 1963-09-26 1968-01-24 Mullard Ltd Improvements in opto-electronic semiconductor devices
DE1190506B (de) * 1963-10-10 1965-04-08 Siemens Ag Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode
FR1464724A (fr) * 1964-11-07 1967-01-06 Ibm Dispositif semi-conducteur photoélectrique
JPS5081695A (enrdf_load_stackoverflow) * 1973-11-21 1975-07-02

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648193A (en) * 1979-09-18 1981-05-01 Xerox Corp Light controlled integrated current diode laser
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS57139984A (en) * 1981-02-24 1982-08-30 Nec Corp Buried photo emitting and receiving semiconductor integrated device
JPS5871676A (ja) * 1981-10-23 1983-04-28 Nec Corp 埋め込みへテロ構造半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5875879A (ja) * 1981-10-29 1983-05-07 Nec Corp 光集積化素子
JPS5875877A (ja) * 1981-10-30 1983-05-07 Nec Corp モニタ内蔵半導体レ−ザ素子
JPS5880887A (ja) * 1981-11-09 1983-05-16 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5884486A (ja) * 1981-11-13 1983-05-20 Nec Corp 半導体レ−ザ・フオトデイテクタ光集積化素子
JPS58162090A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ

Also Published As

Publication number Publication date
NL185251B (nl) 1989-09-18
CA1076237A (en) 1980-04-22
NL185251C (nl) 1990-02-16
FR2318505B1 (enrdf_load_stackoverflow) 1982-10-08
GB1517537A (en) 1978-07-12
JPS60149156U (ja) 1985-10-03
NL7607677A (nl) 1977-01-18
FR2318505A1 (fr) 1977-02-11
DE2632222A1 (de) 1977-03-03

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