CA1076237A - Lasers and photo-detectors - Google Patents
Lasers and photo-detectorsInfo
- Publication number
- CA1076237A CA1076237A CA256,581A CA256581A CA1076237A CA 1076237 A CA1076237 A CA 1076237A CA 256581 A CA256581 A CA 256581A CA 1076237 A CA1076237 A CA 1076237A
- Authority
- CA
- Canada
- Prior art keywords
- laser
- light source
- layer
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims 4
- 239000002019 doping agent Substances 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 33
- 150000002500 ions Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- SUBDBMMJDZJVOS-UHFFFAOYSA-N 5-methoxy-2-{[(4-methoxy-3,5-dimethylpyridin-2-yl)methyl]sulfinyl}-1H-benzimidazole Chemical compound N=1C2=CC(OC)=CC=C2NC=1S(=O)CC1=NC=C(C)C(OC)=C1C SUBDBMMJDZJVOS-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDXHAEQXIBQUEZ-UHFFFAOYSA-N Ropinirole hydrochloride Chemical compound Cl.CCCN(CCC)CCC1=CC=CC2=C1CC(=O)N2 XDXHAEQXIBQUEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- VREFGVBLTWBCJP-UHFFFAOYSA-N alprazolam Chemical compound C12=CC(Cl)=CC=C2N2C(C)=NN=C2CN=C1C1=CC=CC=C1 VREFGVBLTWBCJP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- BULVZWIRKLYCBC-UHFFFAOYSA-N phorate Chemical compound CCOP(=S)(OCC)SCSCC BULVZWIRKLYCBC-UHFFFAOYSA-N 0.000 description 1
- BALXUFOVQVENIU-KXNXZCPBSA-N pseudoephedrine hydrochloride Chemical compound [H+].[Cl-].CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 BALXUFOVQVENIU-KXNXZCPBSA-N 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB29810/75A GB1517537A (en) | 1975-07-16 | 1975-07-16 | Lasers and photo-detectors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1076237A true CA1076237A (en) | 1980-04-22 |
Family
ID=10297543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA256,581A Expired CA1076237A (en) | 1975-07-16 | 1976-07-08 | Lasers and photo-detectors |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JPS5214393A (enrdf_load_stackoverflow) |
| CA (1) | CA1076237A (enrdf_load_stackoverflow) |
| DE (1) | DE2632222A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2318505A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1517537A (enrdf_load_stackoverflow) |
| NL (1) | NL185251C (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2903554C2 (de) * | 1979-01-31 | 1983-11-17 | Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt | Opto-Koppler zur opto-elektronischen Signalübertragung |
| US4349906A (en) * | 1979-09-18 | 1982-09-14 | Xerox Corporation | Optically controlled integrated current diode lasers |
| JPS5789289A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor device |
| JPS57139984A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Buried photo emitting and receiving semiconductor integrated device |
| JPS5884486A (ja) * | 1981-11-13 | 1983-05-20 | Nec Corp | 半導体レ−ザ・フオトデイテクタ光集積化素子 |
| JPS5875879A (ja) * | 1981-10-29 | 1983-05-07 | Nec Corp | 光集積化素子 |
| JPS5880887A (ja) * | 1981-11-09 | 1983-05-16 | Nec Corp | 半導体レ−ザ・フオトダイオ−ド光集積化素子 |
| JPS5871676A (ja) * | 1981-10-23 | 1983-04-28 | Nec Corp | 埋め込みへテロ構造半導体レ−ザ・フオトダイオ−ド光集積化素子 |
| JPS5875877A (ja) * | 1981-10-30 | 1983-05-07 | Nec Corp | モニタ内蔵半導体レ−ザ素子 |
| JPS58162090A (ja) * | 1982-03-23 | 1983-09-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ |
| JPS58186986A (ja) * | 1982-04-27 | 1983-11-01 | Kokusai Denshin Denwa Co Ltd <Kdd> | モニタ付分布帰還形半導体レ−ザ |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1007876A (en) * | 1963-08-15 | 1965-10-22 | Mullard Ltd | Improvements in and relating to opto-electronic semiconductor devices |
| GB1100682A (en) * | 1963-09-26 | 1968-01-24 | Mullard Ltd | Improvements in opto-electronic semiconductor devices |
| DE1190506B (de) * | 1963-10-10 | 1965-04-08 | Siemens Ag | Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode |
| FR1464724A (fr) * | 1964-11-07 | 1967-01-06 | Ibm | Dispositif semi-conducteur photoélectrique |
| JPS5081695A (enrdf_load_stackoverflow) * | 1973-11-21 | 1975-07-02 |
-
1975
- 1975-07-16 GB GB29810/75A patent/GB1517537A/en not_active Expired
-
1976
- 1976-07-08 CA CA256,581A patent/CA1076237A/en not_active Expired
- 1976-07-12 NL NLAANVRAGE7607677,A patent/NL185251C/xx not_active IP Right Cessation
- 1976-07-15 JP JP51084477A patent/JPS5214393A/ja active Pending
- 1976-07-16 DE DE19762632222 patent/DE2632222A1/de not_active Ceased
- 1976-07-16 FR FR7621835A patent/FR2318505A1/fr active Granted
-
1985
- 1985-02-04 JP JP1985014598U patent/JPS60149156U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL185251B (nl) | 1989-09-18 |
| NL185251C (nl) | 1990-02-16 |
| FR2318505B1 (enrdf_load_stackoverflow) | 1982-10-08 |
| GB1517537A (en) | 1978-07-12 |
| JPS5214393A (en) | 1977-02-03 |
| JPS60149156U (ja) | 1985-10-03 |
| NL7607677A (nl) | 1977-01-18 |
| FR2318505A1 (fr) | 1977-02-11 |
| DE2632222A1 (de) | 1977-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19970422 |