FR2318505B1 - - Google Patents

Info

Publication number
FR2318505B1
FR2318505B1 FR7621835A FR7621835A FR2318505B1 FR 2318505 B1 FR2318505 B1 FR 2318505B1 FR 7621835 A FR7621835 A FR 7621835A FR 7621835 A FR7621835 A FR 7621835A FR 2318505 B1 FR2318505 B1 FR 2318505B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7621835A
Other languages
French (fr)
Other versions
FR2318505A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Publication of FR2318505A1 publication Critical patent/FR2318505A1/fr
Application granted granted Critical
Publication of FR2318505B1 publication Critical patent/FR2318505B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
FR7621835A 1975-07-16 1976-07-16 Perfectionnements aux sources de rayonnement lumineux a semi-conducteur Granted FR2318505A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB29810/75A GB1517537A (en) 1975-07-16 1975-07-16 Lasers and photo-detectors

Publications (2)

Publication Number Publication Date
FR2318505A1 FR2318505A1 (fr) 1977-02-11
FR2318505B1 true FR2318505B1 (enrdf_load_stackoverflow) 1982-10-08

Family

ID=10297543

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7621835A Granted FR2318505A1 (fr) 1975-07-16 1976-07-16 Perfectionnements aux sources de rayonnement lumineux a semi-conducteur

Country Status (6)

Country Link
JP (2) JPS5214393A (enrdf_load_stackoverflow)
CA (1) CA1076237A (enrdf_load_stackoverflow)
DE (1) DE2632222A1 (enrdf_load_stackoverflow)
FR (1) FR2318505A1 (enrdf_load_stackoverflow)
GB (1) GB1517537A (enrdf_load_stackoverflow)
NL (1) NL185251C (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2903554C2 (de) * 1979-01-31 1983-11-17 Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt Opto-Koppler zur opto-elektronischen Signalübertragung
US4349906A (en) * 1979-09-18 1982-09-14 Xerox Corporation Optically controlled integrated current diode lasers
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS57139984A (en) * 1981-02-24 1982-08-30 Nec Corp Buried photo emitting and receiving semiconductor integrated device
JPS5884486A (ja) * 1981-11-13 1983-05-20 Nec Corp 半導体レ−ザ・フオトデイテクタ光集積化素子
JPS5880887A (ja) * 1981-11-09 1983-05-16 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5875879A (ja) * 1981-10-29 1983-05-07 Nec Corp 光集積化素子
JPS5871676A (ja) * 1981-10-23 1983-04-28 Nec Corp 埋め込みへテロ構造半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5875877A (ja) * 1981-10-30 1983-05-07 Nec Corp モニタ内蔵半導体レ−ザ素子
JPS58162090A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1007876A (en) * 1963-08-15 1965-10-22 Mullard Ltd Improvements in and relating to opto-electronic semiconductor devices
GB1100682A (en) * 1963-09-26 1968-01-24 Mullard Ltd Improvements in opto-electronic semiconductor devices
DE1190506B (de) * 1963-10-10 1965-04-08 Siemens Ag Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode
FR1464724A (fr) * 1964-11-07 1967-01-06 Ibm Dispositif semi-conducteur photoélectrique
JPS5081695A (enrdf_load_stackoverflow) * 1973-11-21 1975-07-02

Also Published As

Publication number Publication date
GB1517537A (en) 1978-07-12
JPS60149156U (ja) 1985-10-03
DE2632222A1 (de) 1977-03-03
NL185251B (nl) 1989-09-18
FR2318505A1 (fr) 1977-02-11
NL185251C (nl) 1990-02-16
NL7607677A (nl) 1977-01-18
JPS5214393A (en) 1977-02-03
CA1076237A (en) 1980-04-22

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse
ST Notification of lapse
ST Notification of lapse