JPS52141577A - Mos type electromagnetic field effect transistor - Google Patents
Mos type electromagnetic field effect transistorInfo
- Publication number
- JPS52141577A JPS52141577A JP5830676A JP5830676A JPS52141577A JP S52141577 A JPS52141577 A JP S52141577A JP 5830676 A JP5830676 A JP 5830676A JP 5830676 A JP5830676 A JP 5830676A JP S52141577 A JPS52141577 A JP S52141577A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- electromagnetic field
- type electromagnetic
- mos type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain MOSFET which is effective for the high integration degree and the high speed circuit formation by using poly Si containing the regular quantity of oxygen and impurity as a gate layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5830676A JPS52141577A (en) | 1976-05-20 | 1976-05-20 | Mos type electromagnetic field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5830676A JPS52141577A (en) | 1976-05-20 | 1976-05-20 | Mos type electromagnetic field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52141577A true JPS52141577A (en) | 1977-11-25 |
Family
ID=13080537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5830676A Pending JPS52141577A (en) | 1976-05-20 | 1976-05-20 | Mos type electromagnetic field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52141577A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222172A (en) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Forming method for gate insulating film in mosfet |
-
1976
- 1976-05-20 JP JP5830676A patent/JPS52141577A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222172A (en) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Forming method for gate insulating film in mosfet |
JPH0451068B2 (en) * | 1985-03-15 | 1992-08-18 | Sharp Kk |
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