JPS52141577A - Mos type electromagnetic field effect transistor - Google Patents

Mos type electromagnetic field effect transistor

Info

Publication number
JPS52141577A
JPS52141577A JP5830676A JP5830676A JPS52141577A JP S52141577 A JPS52141577 A JP S52141577A JP 5830676 A JP5830676 A JP 5830676A JP 5830676 A JP5830676 A JP 5830676A JP S52141577 A JPS52141577 A JP S52141577A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
electromagnetic field
type electromagnetic
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5830676A
Other languages
Japanese (ja)
Inventor
Tadaharu Tsuyuki
Teruaki Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5830676A priority Critical patent/JPS52141577A/en
Publication of JPS52141577A publication Critical patent/JPS52141577A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain MOSFET which is effective for the high integration degree and the high speed circuit formation by using poly Si containing the regular quantity of oxygen and impurity as a gate layer.
COPYRIGHT: (C)1977,JPO&Japio
JP5830676A 1976-05-20 1976-05-20 Mos type electromagnetic field effect transistor Pending JPS52141577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5830676A JPS52141577A (en) 1976-05-20 1976-05-20 Mos type electromagnetic field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5830676A JPS52141577A (en) 1976-05-20 1976-05-20 Mos type electromagnetic field effect transistor

Publications (1)

Publication Number Publication Date
JPS52141577A true JPS52141577A (en) 1977-11-25

Family

ID=13080537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5830676A Pending JPS52141577A (en) 1976-05-20 1976-05-20 Mos type electromagnetic field effect transistor

Country Status (1)

Country Link
JP (1) JPS52141577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222172A (en) * 1985-03-15 1986-10-02 Sharp Corp Forming method for gate insulating film in mosfet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222172A (en) * 1985-03-15 1986-10-02 Sharp Corp Forming method for gate insulating film in mosfet
JPH0451068B2 (en) * 1985-03-15 1992-08-18 Sharp Kk

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