JPS52135670A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52135670A
JPS52135670A JP5308776A JP5308776A JPS52135670A JP S52135670 A JPS52135670 A JP S52135670A JP 5308776 A JP5308776 A JP 5308776A JP 5308776 A JP5308776 A JP 5308776A JP S52135670 A JPS52135670 A JP S52135670A
Authority
JP
Japan
Prior art keywords
semiconductor device
metal layer
heat sink
laminated metal
sink base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5308776A
Other languages
Japanese (ja)
Inventor
Kazunori Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5308776A priority Critical patent/JPS52135670A/en
Publication of JPS52135670A publication Critical patent/JPS52135670A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To obtain a semiconductor device of high heat radiation effect by forming a nearly intrinsic silicon plate, electric insulation layer and laminated metal layer on a heat sink base and laminated metal layer on a heat sink base and disposing a semiconductor element thereon in close fitting thereto.
COPYRIGHT: (C)1977,JPO&Japio
JP5308776A 1976-05-10 1976-05-10 Semiconductor device Pending JPS52135670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5308776A JPS52135670A (en) 1976-05-10 1976-05-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5308776A JPS52135670A (en) 1976-05-10 1976-05-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52135670A true JPS52135670A (en) 1977-11-12

Family

ID=12932988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5308776A Pending JPS52135670A (en) 1976-05-10 1976-05-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52135670A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03131056A (en) * 1989-10-17 1991-06-04 Toshiba Corp Resin-sealed semiconductor device
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03131056A (en) * 1989-10-17 1991-06-04 Toshiba Corp Resin-sealed semiconductor device
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink

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