JPS52134380A - Production of mis type semiconductor circuits - Google Patents

Production of mis type semiconductor circuits

Info

Publication number
JPS52134380A
JPS52134380A JP5144976A JP5144976A JPS52134380A JP S52134380 A JPS52134380 A JP S52134380A JP 5144976 A JP5144976 A JP 5144976A JP 5144976 A JP5144976 A JP 5144976A JP S52134380 A JPS52134380 A JP S52134380A
Authority
JP
Japan
Prior art keywords
type semiconductor
production
mis type
semiconductor circuits
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5144976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5641183B2 (enExample
Inventor
Yutaka Yoriume
Ban Nakajima
Toshio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5144976A priority Critical patent/JPS52134380A/ja
Publication of JPS52134380A publication Critical patent/JPS52134380A/ja
Publication of JPS5641183B2 publication Critical patent/JPS5641183B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP5144976A 1976-05-06 1976-05-06 Production of mis type semiconductor circuits Granted JPS52134380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5144976A JPS52134380A (en) 1976-05-06 1976-05-06 Production of mis type semiconductor circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5144976A JPS52134380A (en) 1976-05-06 1976-05-06 Production of mis type semiconductor circuits

Publications (2)

Publication Number Publication Date
JPS52134380A true JPS52134380A (en) 1977-11-10
JPS5641183B2 JPS5641183B2 (enExample) 1981-09-26

Family

ID=12887231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5144976A Granted JPS52134380A (en) 1976-05-06 1976-05-06 Production of mis type semiconductor circuits

Country Status (1)

Country Link
JP (1) JPS52134380A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498185A (en) * 1978-01-19 1979-08-02 Nec Corp Preparation of semiconductor device
JPS5529110A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Manufacturing of semiconductor device
JPS56107581A (en) * 1978-11-13 1981-08-26 Rockwell International Corp Method of manufacturing semiconductor device
JPS5739551A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of selectively oxidized mask
JPS59159571A (ja) * 1983-03-01 1984-09-10 Nec Corp 絶縁ゲ−ト電界効果型半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144923B1 (ko) * 1995-02-14 1998-08-01 김광호 압축기의 밸브 유니트

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498185A (en) * 1978-01-19 1979-08-02 Nec Corp Preparation of semiconductor device
JPS5529110A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Manufacturing of semiconductor device
JPS56107581A (en) * 1978-11-13 1981-08-26 Rockwell International Corp Method of manufacturing semiconductor device
JPS5739551A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of selectively oxidized mask
JPS59159571A (ja) * 1983-03-01 1984-09-10 Nec Corp 絶縁ゲ−ト電界効果型半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5641183B2 (enExample) 1981-09-26

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