JPS5212584A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5212584A
JPS5212584A JP51087103A JP8710376A JPS5212584A JP S5212584 A JPS5212584 A JP S5212584A JP 51087103 A JP51087103 A JP 51087103A JP 8710376 A JP8710376 A JP 8710376A JP S5212584 A JPS5212584 A JP S5212584A
Authority
JP
Japan
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51087103A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56947B2 (fi
Inventor
Fuomu Batsuse Pauruuerunaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5212584A publication Critical patent/JPS5212584A/ja
Publication of JPS56947B2 publication Critical patent/JPS56947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP51087103A 1975-07-21 1976-07-21 Semiconductor memory Granted JPS5212584A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2532594A DE2532594B2 (de) 1975-07-21 1975-07-21 Halbleiterspeicher

Publications (2)

Publication Number Publication Date
JPS5212584A true JPS5212584A (en) 1977-01-31
JPS56947B2 JPS56947B2 (fi) 1981-01-10

Family

ID=5952074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51087103A Granted JPS5212584A (en) 1975-07-21 1976-07-21 Semiconductor memory

Country Status (5)

Country Link
JP (1) JPS5212584A (fi)
DE (1) DE2532594B2 (fi)
FR (1) FR2319182A1 (fi)
GB (1) GB1516005A (fi)
NL (1) NL7607984A (fi)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5287380A (en) * 1976-05-10 1977-07-21 Texas Instruments Inc Semiconductor memory and method of producing same
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS55107973A (en) * 1979-02-14 1980-08-19 Bosch Gmbh Robert Ignition starting senser of internal combustion engine
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
JPH038832U (fi) * 1989-06-14 1991-01-28

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176415C (nl) * 1976-07-05 1985-04-01 Hitachi Ltd Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
IT1089299B (it) * 1977-01-26 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
DE2935254A1 (de) * 1979-08-31 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer monolithischen statischen speicherzelle
DE2935291A1 (de) * 1979-08-31 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Monolithische statische speicherzelle
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
DE3138314A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht
DE3138295A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte
JPS5921168U (ja) * 1982-07-30 1984-02-08 三菱電機株式会社 メカニカル・シ−ル

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5635305B2 (fi) * 1975-12-26 1981-08-15
JPS6034270B2 (ja) * 1976-01-12 1985-08-07 テキサス・インスツルメンツ・インコ−ポレイテツド 半導体メモリ装置およびその製造方法
JPS5287380A (en) * 1976-05-10 1977-07-21 Texas Instruments Inc Semiconductor memory and method of producing same
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS55107973A (en) * 1979-02-14 1980-08-19 Bosch Gmbh Robert Ignition starting senser of internal combustion engine
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
JPH038832U (fi) * 1989-06-14 1991-01-28

Also Published As

Publication number Publication date
JPS56947B2 (fi) 1981-01-10
DE2532594A1 (de) 1977-02-03
GB1516005A (en) 1978-06-28
FR2319182B3 (fi) 1979-03-23
DE2532594B2 (de) 1980-05-22
NL7607984A (nl) 1977-01-25
FR2319182A1 (fr) 1977-02-18

Similar Documents

Publication Publication Date Title
JPS5283074A (en) Semiconductor memory
JPS5239387A (en) Semiconductor memory
JPS5269240A (en) Semiconductor memory system
JPS51137339A (en) Integrated circuit memory
JPS5287379A (en) Semiconductor memory
GB1542651A (en) Semiconductor devices
MY8200126A (en) Refreshing semiconductor memories
JPS5384433A (en) Semiconductor memory
JPS522386A (en) Semiconductor chip
ZA766145B (en) Semiconductor devices
GB1548877A (en) Semiconductor devices
JPS51114036A (en) Semiconductor memory
GB1558349A (en) Making semiconductor device
JPS526089A (en) Semiconductor memory
JPS52134385A (en) Semiconductor memory
JPS5282191A (en) Semiconductor ic
GB1552161A (en) Semiconductor devices
JPS526037A (en) Semiconductor memory array
JPS51118340A (en) Nonnvolatile semiconductor memory
JPS5212584A (en) Semiconductor memory
GB1541644A (en) Resynchronizable memory
JPS51140442A (en) Memory circuit
JPS5252337A (en) Semiconductor memory cell
GB2004432B (en) Semiconductor memory
IE42579L (en) Memory circuit