JPS52124878A - Production of semiconductor integrated circuit - Google Patents

Production of semiconductor integrated circuit

Info

Publication number
JPS52124878A
JPS52124878A JP4089476A JP4089476A JPS52124878A JP S52124878 A JPS52124878 A JP S52124878A JP 4089476 A JP4089476 A JP 4089476A JP 4089476 A JP4089476 A JP 4089476A JP S52124878 A JPS52124878 A JP S52124878A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
thyristors
ics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4089476A
Other languages
Japanese (ja)
Inventor
Yutaka Oota
Taiji Usui
Susumu Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4089476A priority Critical patent/JPS52124878A/en
Publication of JPS52124878A publication Critical patent/JPS52124878A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To increase the scale of integration of ICs of thyristors, etc. by forming isolating grooves from the top and bottom surfaces of a semiconductor substrate to make dielectric isolation structure.
JP4089476A 1976-04-13 1976-04-13 Production of semiconductor integrated circuit Pending JPS52124878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4089476A JPS52124878A (en) 1976-04-13 1976-04-13 Production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089476A JPS52124878A (en) 1976-04-13 1976-04-13 Production of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS52124878A true JPS52124878A (en) 1977-10-20

Family

ID=12593206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4089476A Pending JPS52124878A (en) 1976-04-13 1976-04-13 Production of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS52124878A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941956A (en) * 1972-05-01 1974-04-19
US3969749A (en) * 1974-04-01 1976-07-13 Texas Instruments Incorporated Substrate for dielectric isolated integrated circuit with V-etched depth grooves for lapping guide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941956A (en) * 1972-05-01 1974-04-19
US3969749A (en) * 1974-04-01 1976-07-13 Texas Instruments Incorporated Substrate for dielectric isolated integrated circuit with V-etched depth grooves for lapping guide

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