JPS51144188A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS51144188A
JPS51144188A JP50067589A JP6758975A JPS51144188A JP S51144188 A JPS51144188 A JP S51144188A JP 50067589 A JP50067589 A JP 50067589A JP 6758975 A JP6758975 A JP 6758975A JP S51144188 A JPS51144188 A JP S51144188A
Authority
JP
Japan
Prior art keywords
layer
thyristor
composing
reduction
multicrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50067589A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5716507B2 (cs
Inventor
Takahiro Nagano
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50067589A priority Critical patent/JPS51144188A/ja
Publication of JPS51144188A publication Critical patent/JPS51144188A/ja
Publication of JPS5716507B2 publication Critical patent/JPS5716507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP50067589A 1975-06-06 1975-06-06 Thyristor Granted JPS51144188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50067589A JPS51144188A (en) 1975-06-06 1975-06-06 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50067589A JPS51144188A (en) 1975-06-06 1975-06-06 Thyristor

Publications (2)

Publication Number Publication Date
JPS51144188A true JPS51144188A (en) 1976-12-10
JPS5716507B2 JPS5716507B2 (cs) 1982-04-05

Family

ID=13349241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50067589A Granted JPS51144188A (en) 1975-06-06 1975-06-06 Thyristor

Country Status (1)

Country Link
JP (1) JPS51144188A (cs)

Also Published As

Publication number Publication date
JPS5716507B2 (cs) 1982-04-05

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