JPS51139281A - Semi-conductor device - Google Patents
Semi-conductor deviceInfo
- Publication number
- JPS51139281A JPS51139281A JP50062862A JP6286275A JPS51139281A JP S51139281 A JPS51139281 A JP S51139281A JP 50062862 A JP50062862 A JP 50062862A JP 6286275 A JP6286275 A JP 6286275A JP S51139281 A JPS51139281 A JP S51139281A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- conductor device
- pnptr
- npntr
- hfe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50062862A JPS51139281A (en) | 1975-05-28 | 1975-05-28 | Semi-conductor device |
US05/689,819 US4051506A (en) | 1975-05-28 | 1976-05-25 | Complementary semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50062862A JPS51139281A (en) | 1975-05-28 | 1975-05-28 | Semi-conductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51139281A true JPS51139281A (en) | 1976-12-01 |
Family
ID=13212517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50062862A Pending JPS51139281A (en) | 1975-05-28 | 1975-05-28 | Semi-conductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4051506A (ja) |
JP (1) | JPS51139281A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007332480A (ja) * | 2006-06-13 | 2007-12-27 | Mizuno Corp | 下衣 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE31937E (en) * | 1977-11-29 | 1985-07-02 | Fujitsu Ltd. | Semiconductor device and method for its preparation |
US4231057A (en) * | 1978-11-13 | 1980-10-28 | Fujitsu Limited | Semiconductor device and method for its preparation |
US4196440A (en) * | 1978-05-25 | 1980-04-01 | International Business Machines Corporation | Lateral PNP or NPN with a high gain |
US4240846A (en) * | 1978-06-27 | 1980-12-23 | Harris Corporation | Method of fabricating up diffused substrate FED logic utilizing a two-step epitaxial deposition |
GB2081506B (en) * | 1980-07-21 | 1984-06-06 | Data General Corp | Resin-filled groove isolation of integrated circuit elements in a semi-conductor body |
US4824797A (en) * | 1985-10-31 | 1989-04-25 | International Business Machines Corporation | Self-aligned channel stop |
US4717681A (en) * | 1986-05-19 | 1988-01-05 | Texas Instruments Incorporated | Method of making a heterojunction bipolar transistor with SIPOS |
US5014107A (en) * | 1987-07-29 | 1991-05-07 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
US5049968A (en) * | 1988-02-08 | 1991-09-17 | Kabushiki Kaisha Toshiba | Dielectrically isolated substrate and semiconductor device using the same |
US5512774A (en) * | 1988-02-08 | 1996-04-30 | Kabushiki Kaisha Toshiba | Dielectrically isolated substrate and semiconductor device using the same |
US5332920A (en) * | 1988-02-08 | 1994-07-26 | Kabushiki Kaisha Toshiba | Dielectrically isolated high and low voltage substrate regions |
JPH10256394A (ja) | 1997-03-12 | 1998-09-25 | Internatl Business Mach Corp <Ibm> | 半導体構造体およびデバイス |
US7235856B1 (en) * | 1997-12-18 | 2007-06-26 | Micron Technology, Inc. | Trench isolation for semiconductor devices |
JP2009302222A (ja) * | 2008-06-12 | 2009-12-24 | Sanyo Electric Co Ltd | メサ型半導体装置及びその製造方法 |
JP2010021532A (ja) * | 2008-06-12 | 2010-01-28 | Sanyo Electric Co Ltd | メサ型半導体装置及びその製造方法 |
US11887945B2 (en) * | 2020-09-30 | 2024-01-30 | Wolfspeed, Inc. | Semiconductor device with isolation and/or protection structures |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979792A (ja) * | 1972-12-08 | 1974-08-01 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5066184A (ja) * | 1973-10-12 | 1975-06-04 | ||
US3956033A (en) * | 1974-01-03 | 1976-05-11 | Motorola, Inc. | Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector |
-
1975
- 1975-05-28 JP JP50062862A patent/JPS51139281A/ja active Pending
-
1976
- 1976-05-25 US US05/689,819 patent/US4051506A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979792A (ja) * | 1972-12-08 | 1974-08-01 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007332480A (ja) * | 2006-06-13 | 2007-12-27 | Mizuno Corp | 下衣 |
Also Published As
Publication number | Publication date |
---|---|
US4051506A (en) | 1977-09-27 |
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