JPS5087594A - - Google Patents

Info

Publication number
JPS5087594A
JPS5087594A JP49137827A JP13782774A JPS5087594A JP S5087594 A JPS5087594 A JP S5087594A JP 49137827 A JP49137827 A JP 49137827A JP 13782774 A JP13782774 A JP 13782774A JP S5087594 A JPS5087594 A JP S5087594A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49137827A
Other languages
Japanese (ja)
Other versions
JPS5644576B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23670015&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5087594(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of JPS5087594A publication Critical patent/JPS5087594A/ja
Publication of JPS5644576B2 publication Critical patent/JPS5644576B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP13782774A 1973-12-03 1974-12-03 Expired JPS5644576B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421314A US3896485A (en) 1973-12-03 1973-12-03 Charge-coupled device with overflow protection

Publications (2)

Publication Number Publication Date
JPS5087594A true JPS5087594A (enExample) 1975-07-14
JPS5644576B2 JPS5644576B2 (enExample) 1981-10-20

Family

ID=23670015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13782774A Expired JPS5644576B2 (enExample) 1973-12-03 1974-12-03

Country Status (2)

Country Link
US (1) US3896485A (enExample)
JP (1) JPS5644576B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066857A (ja) * 1983-09-22 1985-04-17 Matsushita Electronics Corp 固体撮像素子の製造方法

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
NL7413207A (nl) * 1974-10-08 1976-04-12 Philips Nv Halfgeleiderinrichting.
US4194213A (en) * 1974-12-25 1980-03-18 Sony Corporation Semiconductor image sensor having CCD shift register
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.
DE2527657C3 (de) * 1975-06-20 1979-08-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Optoelektronischer Sensor und Verfahren zu seinem Betrieb
US3996600A (en) * 1975-07-10 1976-12-07 International Business Machines Corporation Charge coupled optical scanner with blooming control
US4194133A (en) * 1975-09-05 1980-03-18 U.S. Philips Corporation Charge coupled circuit arrangements and devices having controlled punch-through charge introduction
US4190851A (en) * 1975-09-17 1980-02-26 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with charge coupled device readout
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
US4142198A (en) * 1976-07-06 1979-02-27 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with an improved charge collection structure
US4197553A (en) * 1976-09-07 1980-04-08 Hughes Aircraft Company Monolithic extrinsic silicon infrared detector structure employing multi-epitaxial layers
US4213137A (en) * 1976-11-16 1980-07-15 Hughes Aircraft Company Monolithic variable size detector
JPS6041463B2 (ja) * 1976-11-19 1985-09-17 株式会社日立製作所 ダイナミツク記憶装置
US4189826A (en) * 1977-03-07 1980-02-26 Eastman Kodak Company Silicon charge-handling device employing SiC electrodes
JPS53125791A (en) * 1977-04-08 1978-11-02 Toshiba Corp Solidstate pick up unit
JPS5917581B2 (ja) * 1978-01-13 1984-04-21 株式会社東芝 固体撮像装置
US4169273A (en) * 1978-06-26 1979-09-25 Honeywell Inc. Photodetector signal processing
EP0048480B1 (en) * 1980-09-19 1985-01-16 Nec Corporation Semiconductor photoelectric converter
US4396438A (en) * 1981-08-31 1983-08-02 Rca Corporation Method of making CCD imagers
JPS58125964A (ja) * 1982-01-22 1983-07-27 Nec Corp 電荷転送撮像装置の駆動方法
JPS58138187A (ja) * 1982-02-12 1983-08-16 Toshiba Corp 固体イメ−ジセンサ
JPS58187082A (ja) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd 固体撮像装置の駆動方法
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
US4603342A (en) * 1983-01-03 1986-07-29 Rca Corporation Imaging array having higher sensitivity and a method of making the same
US4658497A (en) * 1983-01-03 1987-04-21 Rca Corporation Method of making an imaging array having a higher sensitivity
JPH0681280B2 (ja) * 1984-06-06 1994-10-12 日本電気株式会社 電荷結合素子の駆動法
US4665420A (en) * 1984-11-08 1987-05-12 Rca Corporation Edge passivated charge-coupled device image sensor
DD247327A1 (de) * 1986-03-31 1987-07-01 Werk Fernsehelektronik Veb Ueberlaufanordnung fuer ladungssammelnde halbleitergebiete
US4952995A (en) * 1986-05-08 1990-08-28 Santa Barbara Research Center Infrared imager
JPH0815322B2 (ja) * 1986-05-21 1996-02-14 キヤノン株式会社 固体撮像装置
US4794453A (en) * 1986-09-09 1988-12-27 Web Printing Controls Co. Method and apparatus for stroboscopic video inspection of an asynchronous event
US4873561A (en) * 1988-04-19 1989-10-10 Wen David D High dynamic range charge-coupled device
FR2633455B1 (fr) * 1988-06-24 1990-08-24 Thomson Csf Matrice photosensible a transfert de trame d.t.c., avec un systeme antieblouissement vertical, et procede de fabrication d'une telle matrice
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置
US4958207A (en) * 1989-03-17 1990-09-18 Loral Fairchild Corporation Floating diode gain compression
US4967249A (en) * 1989-03-17 1990-10-30 Loral Fairchild Corporation Gain compression photodetector array
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5291044A (en) * 1990-12-12 1994-03-01 Eastman Kodak Company Image sensor with continuous time photodiode
KR940000953Y1 (ko) * 1991-04-13 1994-02-25 금성일렉트론 주식회사 Ccd의 리셋트 게이트 구조
US5426515A (en) * 1992-06-01 1995-06-20 Eastman Kodak Company Lateral overflow gate driver circuit for linear CCD sensor
JP3113406B2 (ja) * 1992-08-13 2000-11-27 旭光学工業株式会社 スチルビデオカメラの撮像素子制御装置
JPH0689998A (ja) * 1992-09-07 1994-03-29 Sony Corp 固体撮像装置
US5338946A (en) * 1993-01-08 1994-08-16 Eastman Kodak Company Solid state image sensor with fast reset
JP3020785B2 (ja) * 1993-12-09 2000-03-15 株式会社東芝 固体撮像装置
TW269744B (en) * 1994-08-08 1996-02-01 Matsushita Electron Co Ltd Solid-state imaging device and method of manufacturing the same
JP3724374B2 (ja) * 2001-01-15 2005-12-07 ソニー株式会社 固体撮像装置及びその駆動方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728590A (en) * 1971-04-21 1973-04-17 Fairchild Camera Instr Co Charge coupled devices with continuous resistor electrode
US3715485A (en) * 1971-10-12 1973-02-06 Rca Corp Radiation sensing and signal transfer circuits
US3771149A (en) * 1971-12-30 1973-11-06 Texas Instruments Inc Charge coupled optical scanner
US3863065A (en) * 1972-10-02 1975-01-28 Rca Corp Dynamic control of blooming in charge coupled, image-sensing arrays
US3792322A (en) * 1973-04-19 1974-02-12 W Boyle Buried channel charge coupled devices
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
US3866067A (en) * 1973-05-21 1975-02-11 Fairchild Camera Instr Co Charge coupled device with exposure and antiblooming control

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
THE BELL SYSTEM TECHNICAL JOURNAL#M10=1972 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066857A (ja) * 1983-09-22 1985-04-17 Matsushita Electronics Corp 固体撮像素子の製造方法

Also Published As

Publication number Publication date
US3896485A (en) 1975-07-22
JPS5644576B2 (enExample) 1981-10-20

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