JPS508483A - - Google Patents
Info
- Publication number
- JPS508483A JPS508483A JP5561473A JP5561473A JPS508483A JP S508483 A JPS508483 A JP S508483A JP 5561473 A JP5561473 A JP 5561473A JP 5561473 A JP5561473 A JP 5561473A JP S508483 A JPS508483 A JP S508483A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5561473A JPS508483A (es) | 1973-05-21 | 1973-05-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5561473A JPS508483A (es) | 1973-05-21 | 1973-05-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS508483A true JPS508483A (es) | 1975-01-28 |
Family
ID=13003637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5561473A Pending JPS508483A (es) | 1973-05-21 | 1973-05-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS508483A (es) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5263074A (en) * | 1975-11-14 | 1977-05-25 | Agency Of Ind Science & Technol | Insulated gate type field effect transistor and its production |
| JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
| JPS5366382A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Mos type field effect transistor |
| JPS5423479A (en) * | 1977-07-25 | 1979-02-22 | Agency Of Ind Science & Technol | Manufacture for field effect transistor of insulation gate type |
| JPS5587480A (en) * | 1978-12-25 | 1980-07-02 | Pioneer Electronic Corp | Insulated gate type field effect transistor and manufacture thereof |
| JPS5676571A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Mos field effect transistor and manufacture thereof |
| US5408116A (en) * | 1992-08-24 | 1995-04-18 | Hitachi, Ltd. | Grooved gate transistor having source and drain diffused layers with specified groove corner shape |
| US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| JP2008060497A (ja) * | 2006-09-04 | 2008-03-13 | Sony Corp | 半導体装置および半導体装置の製造方法 |
| JP2008177278A (ja) * | 2007-01-17 | 2008-07-31 | Toshiba Corp | スタティック型半導体記憶装置 |
-
1973
- 1973-05-21 JP JP5561473A patent/JPS508483A/ja active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5263074A (en) * | 1975-11-14 | 1977-05-25 | Agency Of Ind Science & Technol | Insulated gate type field effect transistor and its production |
| JPS5734670B2 (es) * | 1975-11-14 | 1982-07-24 | ||
| JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
| JPS6123669B2 (es) * | 1976-03-25 | 1986-06-06 | Tokyo Shibaura Electric Co | |
| JPS5366382A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Mos type field effect transistor |
| JPS5423479A (en) * | 1977-07-25 | 1979-02-22 | Agency Of Ind Science & Technol | Manufacture for field effect transistor of insulation gate type |
| JPS5587480A (en) * | 1978-12-25 | 1980-07-02 | Pioneer Electronic Corp | Insulated gate type field effect transistor and manufacture thereof |
| JPS5676571A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Mos field effect transistor and manufacture thereof |
| US6242777B1 (en) | 1982-04-13 | 2001-06-05 | Seiko Epson Corporation | Field effect transistor and liquid crystal devices including the same |
| US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
| US5408116A (en) * | 1992-08-24 | 1995-04-18 | Hitachi, Ltd. | Grooved gate transistor having source and drain diffused layers with specified groove corner shape |
| JP2008060497A (ja) * | 2006-09-04 | 2008-03-13 | Sony Corp | 半導体装置および半導体装置の製造方法 |
| US7605424B2 (en) | 2006-09-04 | 2009-10-20 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
| JP2008177278A (ja) * | 2007-01-17 | 2008-07-31 | Toshiba Corp | スタティック型半導体記憶装置 |