JPS508483A - - Google Patents

Info

Publication number
JPS508483A
JPS508483A JP5561473A JP5561473A JPS508483A JP S508483 A JPS508483 A JP S508483A JP 5561473 A JP5561473 A JP 5561473A JP 5561473 A JP5561473 A JP 5561473A JP S508483 A JPS508483 A JP S508483A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5561473A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5561473A priority Critical patent/JPS508483A/ja
Publication of JPS508483A publication Critical patent/JPS508483A/ja
Pending legal-status Critical Current

Links

JP5561473A 1973-05-21 1973-05-21 Pending JPS508483A (cs)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5561473A JPS508483A (cs) 1973-05-21 1973-05-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5561473A JPS508483A (cs) 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
JPS508483A true JPS508483A (cs) 1975-01-28

Family

ID=13003637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5561473A Pending JPS508483A (cs) 1973-05-21 1973-05-21

Country Status (1)

Country Link
JP (1) JPS508483A (cs)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263074A (en) * 1975-11-14 1977-05-25 Agency Of Ind Science & Technol Insulated gate type field effect transistor and its production
JPS52115663A (en) * 1976-03-25 1977-09-28 Toshiba Corp Semiconductor device
JPS5366382A (en) * 1976-11-26 1978-06-13 Toshiba Corp Mos type field effect transistor
JPS5423479A (en) * 1977-07-25 1979-02-22 Agency Of Ind Science & Technol Manufacture for field effect transistor of insulation gate type
JPS5587480A (en) * 1978-12-25 1980-07-02 Pioneer Electronic Corp Insulated gate type field effect transistor and manufacture thereof
JPS5676571A (en) * 1979-11-28 1981-06-24 Sumitomo Electric Ind Ltd Mos field effect transistor and manufacture thereof
US5408116A (en) * 1992-08-24 1995-04-18 Hitachi, Ltd. Grooved gate transistor having source and drain diffused layers with specified groove corner shape
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
JP2008060497A (ja) * 2006-09-04 2008-03-13 Sony Corp 半導体装置および半導体装置の製造方法
JP2008177278A (ja) * 2007-01-17 2008-07-31 Toshiba Corp スタティック型半導体記憶装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263074A (en) * 1975-11-14 1977-05-25 Agency Of Ind Science & Technol Insulated gate type field effect transistor and its production
JPS52115663A (en) * 1976-03-25 1977-09-28 Toshiba Corp Semiconductor device
JPS5366382A (en) * 1976-11-26 1978-06-13 Toshiba Corp Mos type field effect transistor
JPS5423479A (en) * 1977-07-25 1979-02-22 Agency Of Ind Science & Technol Manufacture for field effect transistor of insulation gate type
JPS5587480A (en) * 1978-12-25 1980-07-02 Pioneer Electronic Corp Insulated gate type field effect transistor and manufacture thereof
JPS5676571A (en) * 1979-11-28 1981-06-24 Sumitomo Electric Ind Ltd Mos field effect transistor and manufacture thereof
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5408116A (en) * 1992-08-24 1995-04-18 Hitachi, Ltd. Grooved gate transistor having source and drain diffused layers with specified groove corner shape
JP2008060497A (ja) * 2006-09-04 2008-03-13 Sony Corp 半導体装置および半導体装置の製造方法
US7605424B2 (en) 2006-09-04 2009-10-20 Sony Corporation Semiconductor device and method of manufacturing semiconductor device
JP2008177278A (ja) * 2007-01-17 2008-07-31 Toshiba Corp スタティック型半導体記憶装置

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