JPS5034484A - - Google Patents

Info

Publication number
JPS5034484A
JPS5034484A JP49071922A JP7192274A JPS5034484A JP S5034484 A JPS5034484 A JP S5034484A JP 49071922 A JP49071922 A JP 49071922A JP 7192274 A JP7192274 A JP 7192274A JP S5034484 A JPS5034484 A JP S5034484A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49071922A
Other versions
JPS5223217B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5034484A publication Critical patent/JPS5034484A/ja
Publication of JPS5223217B2 publication Critical patent/JPS5223217B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP49071922A 1973-06-26 1974-06-25 Expired JPS5223217B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3017973A GB1459231A (en) 1973-06-26 1973-06-26 Semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5034484A true JPS5034484A (ja) 1975-04-02
JPS5223217B2 JPS5223217B2 (ja) 1977-06-22

Family

ID=10303529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49071922A Expired JPS5223217B2 (ja) 1973-06-26 1974-06-25

Country Status (9)

Country Link
US (1) US3943552A (ja)
JP (1) JPS5223217B2 (ja)
CA (1) CA1003576A (ja)
CH (1) CH574167A5 (ja)
DE (1) DE2429705C3 (ja)
FR (1) FR2235492B1 (ja)
GB (1) GB1459231A (ja)
IT (1) IT1015298B (ja)
NL (1) NL163904C (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917311A (ja) * 1972-06-12 1974-02-15
JPS55145103A (en) * 1979-04-25 1980-11-12 Sumitomo Electric Ind Ltd Powder hot forging method
JPS5732680A (en) * 1980-08-05 1982-02-22 Mitsubishi Electric Corp Manufacture of schottky barrier diode
JPS57178354A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device
JPS59135779A (ja) * 1983-01-24 1984-08-04 Mitsubishi Electric Corp 赤外線検出器
JPS60162701A (ja) * 1984-02-01 1985-08-24 Toyota Motor Corp 焼結鍛造品の製造方法
JPS6223906A (ja) * 1985-05-23 1987-01-31 インコ、アロイス、インタ−ナシヨナル、インコ−ポレ−テツド ガス微粒化粉末のカン不使用の熱間加工法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064620A (en) * 1976-01-27 1977-12-27 Hughes Aircraft Company Ion implantation process for fabricating high frequency avalanche devices
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4313971A (en) * 1979-05-29 1982-02-02 Rca Corporation Method of fabricating a Schottky barrier contact
DE2950644C2 (de) * 1979-12-15 1985-12-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Diode
US4350413A (en) * 1980-04-14 1982-09-21 The United States Of America As Represented By The Secretary Of The Navy Multi-color tunable filter
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
US4405934A (en) * 1981-04-13 1983-09-20 Texas Instruments Incorporated NPM Anti-saturation clamp for NPN logic gate transistor
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
US4471367A (en) * 1981-12-04 1984-09-11 At&T Bell Laboratories MESFET Using a shallow junction gate structure on GaInAs
US4492434A (en) * 1982-01-07 1985-01-08 The United States Of America As Represented By The Secretary Of The Navy Multi-color tunable semiconductor device
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
US4742017A (en) * 1986-06-20 1988-05-03 Ford Aerospace Corporation Implantation method for forming Schottky barrier photodiodes
GB9907021D0 (en) 1999-03-27 1999-05-19 Koninkl Philips Electronics Nv Switch circuit and semiconductor switch for battery-powered equipment
US20050098843A1 (en) * 2002-12-01 2005-05-12 Igor Touzov Addressable active materials and technology applications
GB0401579D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Transistor manufacture
US7772063B2 (en) * 2004-08-11 2010-08-10 Identifi Technologies, Inc. Reduced-step CMOS processes for low-cost radio frequency identification devices
EP1641029A1 (en) * 2004-09-27 2006-03-29 STMicroelectronics S.r.l. Process for manufacturing a Schottky contact on a semiconductor substrate
JP2006318956A (ja) * 2005-05-10 2006-11-24 Sumitomo Electric Ind Ltd ショットキーダイオードを有する半導体装置
JP2011119606A (ja) * 2009-12-07 2011-06-16 Sen Corp 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode
US3550260A (en) * 1968-12-26 1970-12-29 Motorola Inc Method for making a hot carrier pn-diode
US3897275A (en) * 1969-05-22 1975-07-29 Texas Instruments Inc Process for fabricating schottky barrier phototransistor
BE759058A (ja) * 1969-11-19 1971-05-17 Philips Nv
US3706128A (en) * 1970-06-30 1972-12-19 Varian Associates Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
DE2104752B2 (de) * 1971-02-02 1975-02-20 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode
US3719797A (en) * 1971-12-16 1973-03-06 Bell Telephone Labor Inc Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917311A (ja) * 1972-06-12 1974-02-15
JPS55145103A (en) * 1979-04-25 1980-11-12 Sumitomo Electric Ind Ltd Powder hot forging method
JPS6151001B2 (ja) * 1979-04-25 1986-11-07 Sumitomo Electric Industries
JPS5732680A (en) * 1980-08-05 1982-02-22 Mitsubishi Electric Corp Manufacture of schottky barrier diode
JPS6328344B2 (ja) * 1980-08-05 1988-06-08 Mitsubishi Electric Corp
JPS57178354A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device
JPS59135779A (ja) * 1983-01-24 1984-08-04 Mitsubishi Electric Corp 赤外線検出器
JPS60162701A (ja) * 1984-02-01 1985-08-24 Toyota Motor Corp 焼結鍛造品の製造方法
JPS6223906A (ja) * 1985-05-23 1987-01-31 インコ、アロイス、インタ−ナシヨナル、インコ−ポレ−テツド ガス微粒化粉末のカン不使用の熱間加工法
JPH0225961B2 (ja) * 1985-05-23 1990-06-06 Inco Alloys Int

Also Published As

Publication number Publication date
DE2429705B2 (de) 1980-05-22
DE2429705A1 (de) 1975-01-16
GB1459231A (en) 1976-12-22
CA1003576A (en) 1977-01-11
FR2235492B1 (ja) 1979-01-05
NL7408438A (ja) 1974-12-30
DE2429705C3 (de) 1981-01-29
JPS5223217B2 (ja) 1977-06-22
FR2235492A1 (ja) 1975-01-24
IT1015298B (it) 1977-05-10
NL163904C (nl) 1980-10-15
US3943552A (en) 1976-03-09
NL163904B (nl) 1980-05-16
CH574167A5 (ja) 1976-03-31

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