JPS5016482A - - Google Patents

Info

Publication number
JPS5016482A
JPS5016482A JP49047155A JP4715574A JPS5016482A JP S5016482 A JPS5016482 A JP S5016482A JP 49047155 A JP49047155 A JP 49047155A JP 4715574 A JP4715574 A JP 4715574A JP S5016482 A JPS5016482 A JP S5016482A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49047155A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5016482A publication Critical patent/JPS5016482A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
JP49047155A 1973-04-27 1974-04-27 Pending JPS5016482A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00355214A US3852799A (en) 1973-04-27 1973-04-27 Buried channel charge coupled apparatus

Publications (1)

Publication Number Publication Date
JPS5016482A true JPS5016482A (ja) 1975-02-21

Family

ID=23396649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49047155A Pending JPS5016482A (ja) 1973-04-27 1974-04-27

Country Status (7)

Country Link
US (1) US3852799A (ja)
JP (1) JPS5016482A (ja)
CA (1) CA971287A (ja)
DE (1) DE2420251A1 (ja)
FR (1) FR2227646B1 (ja)
GB (1) GB1442464A (ja)
NL (1) NL7405421A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265824U (ja) * 1975-11-12 1977-05-16
JPS52153017U (ja) * 1976-05-17 1977-11-19
JPS558100A (en) * 1978-06-29 1980-01-21 Raytheon Co Method of manufacturing charge coupled device
JPS5511394A (en) * 1978-05-16 1980-01-26 Texas Instruments Inc Charge transfer device
JPS5994871A (ja) * 1982-11-22 1984-05-31 Nec Corp 電荷転送装置
JPS6194359A (ja) * 1984-09-24 1986-05-13 ア−ルシ−エ−　コ−ポレ−ション 埋込みチヤンネル型電荷結合装置
JPH0245940A (ja) * 1988-06-30 1990-02-15 Tektronix Inc 電荷結合素子及びその製造方法
US10443608B2 (en) 2015-03-30 2019-10-15 Mitsubishi Electric Corporation Impeller

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US4290187A (en) * 1973-10-12 1981-09-22 Siemens Aktiengesellschaft Method of making charge-coupled arrangement in the two-phase technique
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
DE2400208A1 (de) * 1974-01-03 1975-07-17 Siemens Ag Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
NL7401939A (nl) * 1974-02-13 1975-08-15 Philips Nv Ladingsgekoppelde inrichting.
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes
US3924319A (en) * 1974-08-12 1975-12-09 Bell Telephone Labor Inc Method of fabricating stepped electrodes
US5293035A (en) * 1974-10-03 1994-03-08 Lyons James W Charge-coupled devices
DE2500909A1 (de) * 1975-01-11 1976-07-15 Siemens Ag Verfahren zum betrieb einer ladungsverschiebeanordnung nach dem charge-coupled-device-prinzip (bccd)
US3996600A (en) * 1975-07-10 1976-12-07 International Business Machines Corporation Charge coupled optical scanner with blooming control
US4167017A (en) * 1976-06-01 1979-09-04 Texas Instruments Incorporated CCD structures with surface potential asymmetry beneath the phase electrodes
US4613895A (en) * 1977-03-24 1986-09-23 Eastman Kodak Company Color responsive imaging device employing wavelength dependent semiconductor optical absorption
US4234889A (en) * 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4365261A (en) * 1977-08-26 1982-12-21 Texas Instruments Incorporated Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current
US4364076A (en) * 1977-08-26 1982-12-14 Texas Instruments Incorporated Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4227202A (en) * 1977-10-27 1980-10-07 Texas Instruments Incorporated Dual plane barrier-type two-phase CCD
US4228445A (en) * 1977-10-27 1980-10-14 Texas Instruments Incorporated Dual plane well-type two-phase ccd
US4271419A (en) * 1978-01-16 1981-06-02 Texas Instruments Incorporated Serial readout stratified channel CCD
US4266234A (en) * 1978-01-16 1981-05-05 Texas Instruments Incorporated Parallel readout stratified channel CCD
US4277792A (en) * 1978-02-17 1981-07-07 Texas Instruments Incorporated Piggyback readout stratified channel CCD
JPS577964A (en) * 1980-06-17 1982-01-16 Matsushita Electric Ind Co Ltd Charge transfer element
DE3581793D1 (de) * 1984-12-06 1991-03-28 Toshiba Kawasaki Kk Ladungsverschiebeanordnung.
FR2591387B1 (fr) * 1985-12-10 1988-07-29 Thomson Csf Procede de realisation d'un dispositif a transfert de charges et dispositif obtenu par ce procede
FR2625041B1 (fr) * 1987-12-22 1990-04-20 Thomson Csf Dispositif de transfert de charges a abaissement de potentiel de transfert en sortie, et procede de fabrication de ce dispositif
FR2626102B1 (fr) * 1988-01-19 1990-05-04 Thomson Csf Memoire a transfert de charges et procede de fabrication de cette memoire
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
JP2768312B2 (ja) * 1995-06-02 1998-06-25 日本電気株式会社 電荷転送装置、その駆動方法及び製造方法
JP3011137B2 (ja) 1997-06-27 2000-02-21 日本電気株式会社 電荷転送装置およびその製造方法
JP4695745B2 (ja) * 1999-08-11 2011-06-08 富士フイルム株式会社 固体撮像素子及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS461220A (ja) * 1970-02-16 1971-09-16

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE383573B (sv) * 1971-04-06 1976-03-15 Western Electric Co Laddningskopplad anordning
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
SE387186B (sv) * 1971-06-28 1976-08-30 Western Electric Co Laddningskopplad halvledaranordning med olikformig laddningskoncentration lengs informationskanalen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS461220A (ja) * 1970-02-16 1971-09-16

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265824U (ja) * 1975-11-12 1977-05-16
JPS52153017U (ja) * 1976-05-17 1977-11-19
JPS5511394A (en) * 1978-05-16 1980-01-26 Texas Instruments Inc Charge transfer device
JPS596072B2 (ja) * 1978-05-16 1984-02-08 テキサス・インスツルメンツインコ−ポレイテツド 電荷転送デバイス
JPS558100A (en) * 1978-06-29 1980-01-21 Raytheon Co Method of manufacturing charge coupled device
JPS6318345B2 (ja) * 1978-06-29 1988-04-18 Raytheon Co
JPS5994871A (ja) * 1982-11-22 1984-05-31 Nec Corp 電荷転送装置
JPS6194359A (ja) * 1984-09-24 1986-05-13 ア−ルシ−エ−　コ−ポレ−ション 埋込みチヤンネル型電荷結合装置
JPH0245940A (ja) * 1988-06-30 1990-02-15 Tektronix Inc 電荷結合素子及びその製造方法
US10443608B2 (en) 2015-03-30 2019-10-15 Mitsubishi Electric Corporation Impeller

Also Published As

Publication number Publication date
GB1442464A (en) 1976-07-14
FR2227646A1 (ja) 1974-11-22
US3852799A (en) 1974-12-03
FR2227646B1 (ja) 1978-01-27
DE2420251A1 (de) 1974-10-31
NL7405421A (ja) 1974-10-29
CA971287A (en) 1975-07-15

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