JPS50109682A - - Google Patents
Info
- Publication number
- JPS50109682A JPS50109682A JP49013715A JP1371574A JPS50109682A JP S50109682 A JPS50109682 A JP S50109682A JP 49013715 A JP49013715 A JP 49013715A JP 1371574 A JP1371574 A JP 1371574A JP S50109682 A JPS50109682 A JP S50109682A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1371574A JPS5435756B2 (US20100223739A1-20100909-C00025.png) | 1974-02-04 | 1974-02-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1371574A JPS5435756B2 (US20100223739A1-20100909-C00025.png) | 1974-02-04 | 1974-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50109682A true JPS50109682A (US20100223739A1-20100909-C00025.png) | 1975-08-28 |
| JPS5435756B2 JPS5435756B2 (US20100223739A1-20100909-C00025.png) | 1979-11-05 |
Family
ID=11840926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1371574A Expired JPS5435756B2 (US20100223739A1-20100909-C00025.png) | 1974-02-04 | 1974-02-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5435756B2 (US20100223739A1-20100909-C00025.png) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54101681A (en) * | 1978-01-27 | 1979-08-10 | Nec Corp | Insulating gate field effect semiconductor device with input protection unit |
| JPS54146975A (en) * | 1978-05-10 | 1979-11-16 | Nec Corp | Protection circuit of semiconductor device |
| JPS556856A (en) * | 1978-06-28 | 1980-01-18 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| JPS5570071A (en) * | 1978-11-21 | 1980-05-27 | Mitsubishi Electric Corp | Mosic protective circuit |
| JPS5571067A (en) * | 1978-11-24 | 1980-05-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit device |
| JPS5571066A (en) * | 1978-11-24 | 1980-05-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit device |
| JPS577969A (en) * | 1980-06-18 | 1982-01-16 | Toshiba Corp | Semiconductor integrated circuit |
| JPS5798193A (en) * | 1980-12-08 | 1982-06-18 | Toshiba Corp | Semiconductor storage device |
| JPS5863172A (ja) * | 1981-10-12 | 1983-04-14 | Nec Corp | 入出力保護装置 |
| JPS59164254U (ja) * | 1983-04-20 | 1984-11-02 | 日本電気株式会社 | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS6019237U (ja) * | 1978-10-20 | 1985-02-09 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 電圧クランプ回路 |
| JPS6076162A (ja) * | 1983-10-03 | 1985-04-30 | Fuji Xerox Co Ltd | ハイブリツドイメ−ジセンサの製造方法 |
| JPH02138447U (US20100223739A1-20100909-C00025.png) * | 1989-02-10 | 1990-11-19 |
-
1974
- 1974-02-04 JP JP1371574A patent/JPS5435756B2/ja not_active Expired
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6359263B2 (US20100223739A1-20100909-C00025.png) * | 1978-01-27 | 1988-11-18 | ||
| JPS54101681A (en) * | 1978-01-27 | 1979-08-10 | Nec Corp | Insulating gate field effect semiconductor device with input protection unit |
| JPS54146975A (en) * | 1978-05-10 | 1979-11-16 | Nec Corp | Protection circuit of semiconductor device |
| JPS556856A (en) * | 1978-06-28 | 1980-01-18 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| JPS627712B2 (US20100223739A1-20100909-C00025.png) * | 1978-06-28 | 1987-02-18 | Mitsubishi Electric Corp | |
| JPS6019237U (ja) * | 1978-10-20 | 1985-02-09 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 電圧クランプ回路 |
| JPS5570071A (en) * | 1978-11-21 | 1980-05-27 | Mitsubishi Electric Corp | Mosic protective circuit |
| JPS5571067A (en) * | 1978-11-24 | 1980-05-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit device |
| JPS5571066A (en) * | 1978-11-24 | 1980-05-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit device |
| JPS577969A (en) * | 1980-06-18 | 1982-01-16 | Toshiba Corp | Semiconductor integrated circuit |
| JPS623996B2 (US20100223739A1-20100909-C00025.png) * | 1980-12-08 | 1987-01-28 | Tokyo Shibaura Electric Co | |
| JPS5798193A (en) * | 1980-12-08 | 1982-06-18 | Toshiba Corp | Semiconductor storage device |
| JPS5863172A (ja) * | 1981-10-12 | 1983-04-14 | Nec Corp | 入出力保護装置 |
| JPS59164254U (ja) * | 1983-04-20 | 1984-11-02 | 日本電気株式会社 | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS6076162A (ja) * | 1983-10-03 | 1985-04-30 | Fuji Xerox Co Ltd | ハイブリツドイメ−ジセンサの製造方法 |
| JPH02138447U (US20100223739A1-20100909-C00025.png) * | 1989-02-10 | 1990-11-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5435756B2 (US20100223739A1-20100909-C00025.png) | 1979-11-05 |
