JPS4972181A - - Google Patents

Info

Publication number
JPS4972181A
JPS4972181A JP10444673A JP10444673A JPS4972181A JP S4972181 A JPS4972181 A JP S4972181A JP 10444673 A JP10444673 A JP 10444673A JP 10444673 A JP10444673 A JP 10444673A JP S4972181 A JPS4972181 A JP S4972181A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10444673A
Other languages
Japanese (ja)
Other versions
JPS548356B2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4972181A publication Critical patent/JPS4972181A/ja
Publication of JPS548356B2 publication Critical patent/JPS548356B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10444673A 1972-09-28 1973-09-14 Expired JPS548356B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247651 DE2247651C3 (de) 1972-09-28 1972-09-28 Vorrichtung zur Steuerung des Durchmessers eines Halbleiterstabes

Publications (2)

Publication Number Publication Date
JPS4972181A true JPS4972181A (de) 1974-07-12
JPS548356B2 JPS548356B2 (de) 1979-04-14

Family

ID=5857653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10444673A Expired JPS548356B2 (de) 1972-09-28 1973-09-14

Country Status (5)

Country Link
JP (1) JPS548356B2 (de)
BE (1) BE795488A (de)
DE (1) DE2247651C3 (de)
NL (1) NL7306684A (de)
SU (1) SU550958A3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2529329C3 (de) * 1975-07-01 1982-06-16 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum tiegellosen Zonenschmelzen
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
JP4677882B2 (ja) * 2005-11-10 2011-04-27 信越半導体株式会社 半導体結晶の製造方法及び半導体結晶の製造装置

Also Published As

Publication number Publication date
DE2247651A1 (de) 1974-04-04
JPS548356B2 (de) 1979-04-14
SU550958A3 (ru) 1977-03-15
DE2247651C3 (de) 1979-07-12
BE795488A (fr) 1973-05-29
NL7306684A (de) 1974-04-01
DE2247651B2 (de) 1978-11-16

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