JPS548356B2 - - Google Patents
Info
- Publication number
- JPS548356B2 JPS548356B2 JP10444673A JP10444673A JPS548356B2 JP S548356 B2 JPS548356 B2 JP S548356B2 JP 10444673 A JP10444673 A JP 10444673A JP 10444673 A JP10444673 A JP 10444673A JP S548356 B2 JPS548356 B2 JP S548356B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722247651 DE2247651C3 (de) | 1972-09-28 | 1972-09-28 | Vorrichtung zur Steuerung des Durchmessers eines Halbleiterstabes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4972181A JPS4972181A (ja) | 1974-07-12 |
| JPS548356B2 true JPS548356B2 (ja) | 1979-04-14 |
Family
ID=5857653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10444673A Expired JPS548356B2 (ja) | 1972-09-28 | 1973-09-14 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS548356B2 (ja) |
| BE (1) | BE795488A (ja) |
| DE (1) | DE2247651C3 (ja) |
| NL (1) | NL7306684A (ja) |
| SU (1) | SU550958A3 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2529329C3 (de) * | 1975-07-01 | 1982-06-16 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum tiegellosen Zonenschmelzen |
| JPH0651599B2 (ja) * | 1987-12-05 | 1994-07-06 | 信越半導体株式会社 | 浮遊帯域制御方法 |
| JP4677882B2 (ja) * | 2005-11-10 | 2011-04-27 | 信越半導体株式会社 | 半導体結晶の製造方法及び半導体結晶の製造装置 |
-
0
- BE BE795488D patent/BE795488A/xx not_active IP Right Cessation
-
1972
- 1972-09-28 DE DE19722247651 patent/DE2247651C3/de not_active Expired
-
1973
- 1973-05-14 NL NL7306684A patent/NL7306684A/xx unknown
- 1973-09-14 JP JP10444673A patent/JPS548356B2/ja not_active Expired
-
1974
- 1974-05-30 SU SU2027959A patent/SU550958A3/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2247651A1 (de) | 1974-04-04 |
| SU550958A3 (ru) | 1977-03-15 |
| JPS4972181A (ja) | 1974-07-12 |
| DE2247651C3 (de) | 1979-07-12 |
| BE795488A (fr) | 1973-05-29 |
| NL7306684A (ja) | 1974-04-01 |
| DE2247651B2 (de) | 1978-11-16 |