JPS4952980A - - Google Patents

Info

Publication number
JPS4952980A
JPS4952980A JP47094543A JP9454372A JPS4952980A JP S4952980 A JPS4952980 A JP S4952980A JP 47094543 A JP47094543 A JP 47094543A JP 9454372 A JP9454372 A JP 9454372A JP S4952980 A JPS4952980 A JP S4952980A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47094543A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47094543A priority Critical patent/JPS4952980A/ja
Priority to DE19732338239 priority patent/DE2338239A1/de
Publication of JPS4952980A publication Critical patent/JPS4952980A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
JP47094543A 1972-09-22 1972-09-22 Pending JPS4952980A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47094543A JPS4952980A (ja) 1972-09-22 1972-09-22
DE19732338239 DE2338239A1 (de) 1972-09-22 1973-07-27 Integrierte halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47094543A JPS4952980A (ja) 1972-09-22 1972-09-22

Publications (1)

Publication Number Publication Date
JPS4952980A true JPS4952980A (ja) 1974-05-23

Family

ID=14113217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47094543A Pending JPS4952980A (ja) 1972-09-22 1972-09-22

Country Status (2)

Country Link
JP (1) JPS4952980A (ja)
DE (1) DE2338239A1 (ja)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214383A (en) * 1975-07-24 1977-02-03 Fujitsu Ltd Mis-type semiconductor device
JPS54128012U (ja) * 1978-02-27 1979-09-06
JPS54119653A (en) * 1978-03-08 1979-09-17 Hitachi Ltd Constant voltage generating circuit
JPS54143579U (ja) * 1978-03-27 1979-10-05
JPS54132753A (en) * 1978-04-05 1979-10-16 Hitachi Ltd Referential voltage generator and its application
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS55123160A (en) * 1978-12-22 1980-09-22 Centre Electron Horloger Standard voltage source
JPS60143011A (ja) * 1984-10-24 1985-07-29 Hitachi Ltd 半導体集積回路装置
JPS60143012A (ja) * 1984-10-24 1985-07-29 Hitachi Ltd 半導体集積回路装置
JPS60150116A (ja) * 1984-11-28 1985-08-07 Hitachi Ltd 定電圧発生回路装置
JPS60150113A (ja) * 1984-11-28 1985-08-07 Hitachi Ltd 基準電圧発生装置
JPS60150115A (ja) * 1984-11-28 1985-08-07 Hitachi Ltd 電圧検出装置
JPS60242658A (ja) * 1984-10-24 1985-12-02 Hitachi Ltd 半導体集積回路
JPS60243716A (ja) * 1984-10-24 1985-12-03 Hitachi Ltd 電圧レギユレ−タ
JPS60252928A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 差動増幅器及びそれを用いた電子装置
JPS60252924A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 定電流回路
JPS60252925A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 定電流回路
JPS60252926A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 電圧レギユレ−タ
JPS60252927A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 基準電圧発生装置及びそれを用いた電子装置
JPS61117539U (ja) * 1984-12-29 1986-07-24
JPS61118249U (ja) * 1984-12-29 1986-07-25
JPS6435949A (en) * 1987-07-02 1989-02-07 Biyun Sa Method of controlling electrically continuous state of mos transistor and integrated circuit obtained by applying the method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
GB2243948B (en) * 1990-04-20 1994-06-08 Nobuo Mikoshiba Integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511397A (ja) * 1974-05-24 1976-01-08 Deepsea Ventures Inc

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511397A (ja) * 1974-05-24 1976-01-08 Deepsea Ventures Inc

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214383A (en) * 1975-07-24 1977-02-03 Fujitsu Ltd Mis-type semiconductor device
JPS54128012U (ja) * 1978-02-27 1979-09-06
JPS5845508Y2 (ja) * 1978-02-27 1983-10-15 松下電器産業株式会社 小型直流モ−タ
JPS54119653A (en) * 1978-03-08 1979-09-17 Hitachi Ltd Constant voltage generating circuit
JPS54143579U (ja) * 1978-03-27 1979-10-05
JPS54132753A (en) * 1978-04-05 1979-10-16 Hitachi Ltd Referential voltage generator and its application
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS55123160A (en) * 1978-12-22 1980-09-22 Centre Electron Horloger Standard voltage source
JPS60252926A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 電圧レギユレ−タ
JPS60252928A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 差動増幅器及びそれを用いた電子装置
JPS6319884B2 (ja) * 1984-09-28 1988-04-25 Hitachi Ltd
JPS60252927A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 基準電圧発生装置及びそれを用いた電子装置
JPS60252925A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 定電流回路
JPS60252924A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 定電流回路
JPS60242658A (ja) * 1984-10-24 1985-12-02 Hitachi Ltd 半導体集積回路
JPS60243716A (ja) * 1984-10-24 1985-12-03 Hitachi Ltd 電圧レギユレ−タ
JPS60143012A (ja) * 1984-10-24 1985-07-29 Hitachi Ltd 半導体集積回路装置
JPS60143011A (ja) * 1984-10-24 1985-07-29 Hitachi Ltd 半導体集積回路装置
JPH0378007B2 (ja) * 1984-10-24 1991-12-12 Hitachi Ltd
JPS60150115A (ja) * 1984-11-28 1985-08-07 Hitachi Ltd 電圧検出装置
JPS60150113A (ja) * 1984-11-28 1985-08-07 Hitachi Ltd 基準電圧発生装置
JPS60150116A (ja) * 1984-11-28 1985-08-07 Hitachi Ltd 定電圧発生回路装置
JPS61117539U (ja) * 1984-12-29 1986-07-24
JPS61118249U (ja) * 1984-12-29 1986-07-25
JPH0425969Y2 (ja) * 1984-12-29 1992-06-23
JPS6435949A (en) * 1987-07-02 1989-02-07 Biyun Sa Method of controlling electrically continuous state of mos transistor and integrated circuit obtained by applying the method

Also Published As

Publication number Publication date
DE2338239A1 (de) 1974-03-28

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