JPS4914053A - - Google Patents

Info

Publication number
JPS4914053A
JPS4914053A JP48016682A JP1668273A JPS4914053A JP S4914053 A JPS4914053 A JP S4914053A JP 48016682 A JP48016682 A JP 48016682A JP 1668273 A JP1668273 A JP 1668273A JP S4914053 A JPS4914053 A JP S4914053A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48016682A
Other languages
Japanese (ja)
Other versions
JPS5345099B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4914053A publication Critical patent/JPS4914053A/ja
Publication of JPS5345099B2 publication Critical patent/JPS5345099B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP1668273A 1972-03-20 1973-02-12 Expired JPS5345099B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23589772A 1972-03-20 1972-03-20

Publications (2)

Publication Number Publication Date
JPS4914053A true JPS4914053A (en:Method) 1974-02-07
JPS5345099B2 JPS5345099B2 (en:Method) 1978-12-04

Family

ID=22887316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1668273A Expired JPS5345099B2 (en:Method) 1972-03-20 1973-02-12

Country Status (7)

Country Link
US (1) US3745539A (en:Method)
JP (1) JPS5345099B2 (en:Method)
CA (1) CA981365A (en:Method)
DE (1) DE2302137C3 (en:Method)
FR (1) FR2176709B1 (en:Method)
GB (1) GB1367058A (en:Method)
IT (1) IT974718B (en:Method)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142594A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 半導体記憶装置
JPS6217140A (ja) * 1985-07-15 1987-01-26 Sumitomo Metal Mining Co Ltd 銅硫化物精鉱からの不純物除去方法
JPS6439690A (en) * 1988-06-03 1989-02-09 Nec Corp Semiconductor circuit
CN102808078A (zh) * 2012-06-18 2012-12-05 首钢总公司 球团焙烧装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057789A (en) * 1974-06-19 1977-11-08 International Business Machines Corporation Reference voltage source for memory cells
US3931617A (en) * 1974-10-07 1976-01-06 Signetics Corporation Collector-up dynamic memory cell
US3983545A (en) * 1975-06-30 1976-09-28 International Business Machines Corporation Random access memory employing single ended sense latch for one device cell
US4264832A (en) * 1979-04-12 1981-04-28 Ibm Corporation Feedback amplifier
JPH0750560B2 (ja) * 1981-05-09 1995-05-31 ヤマハ株式会社 ディジタル集積回路装置
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
DE3380105D1 (en) * 1982-09-29 1989-07-27 Hitachi Ltd Semiconductor integrated circuit device
US4651302A (en) * 1984-11-23 1987-03-17 International Business Machines Corporation Read only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhanced
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
USPP13485P2 (en) 1999-06-01 2003-01-21 Florfis Ag Geranium plant named ‘Fisrosimo’

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644905A (en) * 1969-11-12 1972-02-22 Gen Instrument Corp Single device storage cell for read-write memory utilizing complementary field-effect transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142594A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 半導体記憶装置
JPS6217140A (ja) * 1985-07-15 1987-01-26 Sumitomo Metal Mining Co Ltd 銅硫化物精鉱からの不純物除去方法
JPS6439690A (en) * 1988-06-03 1989-02-09 Nec Corp Semiconductor circuit
CN102808078A (zh) * 2012-06-18 2012-12-05 首钢总公司 球团焙烧装置

Also Published As

Publication number Publication date
DE2302137C3 (de) 1980-06-19
FR2176709A1 (en:Method) 1973-11-02
JPS5345099B2 (en:Method) 1978-12-04
DE2302137A1 (de) 1973-10-04
DE2302137B2 (de) 1979-09-20
GB1367058A (en) 1974-09-18
CA981365A (en) 1976-01-06
IT974718B (it) 1974-07-10
US3745539A (en) 1973-07-10
FR2176709B1 (en:Method) 1976-05-21

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