IT974718B - Circuito rigenerativo di tipo ad aggancio per leggere una cella di memorizzazione dinamica - Google Patents

Circuito rigenerativo di tipo ad aggancio per leggere una cella di memorizzazione dinamica

Info

Publication number
IT974718B
IT974718B IT7232871A IT3287172A IT974718B IT 974718 B IT974718 B IT 974718B IT 7232871 A IT7232871 A IT 7232871A IT 3287172 A IT3287172 A IT 3287172A IT 974718 B IT974718 B IT 974718B
Authority
IT
Italy
Prior art keywords
latch
reading
storage cell
dynamic storage
regenerative circuit
Prior art date
Application number
IT7232871A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT974718B publication Critical patent/IT974718B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
IT7232871A 1972-03-20 1972-12-14 Circuito rigenerativo di tipo ad aggancio per leggere una cella di memorizzazione dinamica IT974718B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23589772A 1972-03-20 1972-03-20

Publications (1)

Publication Number Publication Date
IT974718B true IT974718B (it) 1974-07-10

Family

ID=22887316

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7232871A IT974718B (it) 1972-03-20 1972-12-14 Circuito rigenerativo di tipo ad aggancio per leggere una cella di memorizzazione dinamica

Country Status (7)

Country Link
US (1) US3745539A (it)
JP (1) JPS5345099B2 (it)
CA (1) CA981365A (it)
DE (1) DE2302137C3 (it)
FR (1) FR2176709B1 (it)
GB (1) GB1367058A (it)
IT (1) IT974718B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057789A (en) * 1974-06-19 1977-11-08 International Business Machines Corporation Reference voltage source for memory cells
US3931617A (en) * 1974-10-07 1976-01-06 Signetics Corporation Collector-up dynamic memory cell
US3983545A (en) * 1975-06-30 1976-09-28 International Business Machines Corporation Random access memory employing single ended sense latch for one device cell
JPS5728873Y2 (it) * 1978-04-06 1982-06-23
US4264832A (en) * 1979-04-12 1981-04-28 Ibm Corporation Feedback amplifier
JPH0750560B2 (ja) * 1981-05-09 1995-05-31 ヤマハ株式会社 ディジタル集積回路装置
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
EP0104657B1 (en) * 1982-09-29 1989-06-21 Hitachi, Ltd. Semiconductor integrated circuit device
US4651302A (en) * 1984-11-23 1987-03-17 International Business Machines Corporation Read only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhanced
JPH0785358B2 (ja) * 1984-12-17 1995-09-13 株式会社日立製作所 半導体記憶装置
JPS6217140A (ja) * 1985-07-15 1987-01-26 Sumitomo Metal Mining Co Ltd 銅硫化物精鉱からの不純物除去方法
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
JPS6439690A (en) * 1988-06-03 1989-02-09 Nec Corp Semiconductor circuit
USPP13485P2 (en) 1999-06-01 2003-01-21 Florfis Ag Geranium plant named ‘Fisrosimo’
CN102808078B (zh) * 2012-06-18 2013-11-27 首钢总公司 球团焙烧装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3644905A (en) * 1969-11-12 1972-02-22 Gen Instrument Corp Single device storage cell for read-write memory utilizing complementary field-effect transistors

Also Published As

Publication number Publication date
DE2302137B2 (de) 1979-09-20
CA981365A (en) 1976-01-06
US3745539A (en) 1973-07-10
FR2176709A1 (it) 1973-11-02
DE2302137C3 (de) 1980-06-19
FR2176709B1 (it) 1976-05-21
JPS5345099B2 (it) 1978-12-04
DE2302137A1 (de) 1973-10-04
GB1367058A (en) 1974-09-18
JPS4914053A (it) 1974-02-07

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