JPS4839865B1 - - Google Patents
Info
- Publication number
- JPS4839865B1 JPS4839865B1 JP8925869A JP8925869A JPS4839865B1 JP S4839865 B1 JPS4839865 B1 JP S4839865B1 JP 8925869 A JP8925869 A JP 8925869A JP 8925869 A JP8925869 A JP 8925869A JP S4839865 B1 JPS4839865 B1 JP S4839865B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/08—Heating of the reaction chamber or the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/002—Amphoteric doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/915—Amphoteric doping
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77442168A | 1968-11-08 | 1968-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4839865B1 true JPS4839865B1 (ja) | 1973-11-27 |
Family
ID=25101179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8925869A Pending JPS4839865B1 (ja) | 1968-11-08 | 1969-11-07 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3560275A (ja) |
| JP (1) | JPS4839865B1 (ja) |
| DE (1) | DE1955253A1 (ja) |
| FR (1) | FR2022910B1 (ja) |
| GB (1) | GB1256108A (ja) |
| NL (1) | NL6916833A (ja) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648120A (en) * | 1969-01-16 | 1972-03-07 | Bell Telephone Labor Inc | Indium aluminum phosphide and electroluminescent device using same |
| JPS4921992B1 (ja) * | 1969-06-30 | 1974-06-05 | ||
| NL153030B (nl) * | 1969-09-05 | 1977-04-15 | Hitachi Ltd | Licht-uitzendende halfgeleiderdiode. |
| GB1285686A (en) * | 1969-09-12 | 1972-08-16 | Hitachi Ltd | A method of doping a gas-phase semiconductor layer |
| DE2021345A1 (de) * | 1970-04-30 | 1972-01-13 | Siemens Ag | Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff |
| US3751310A (en) * | 1971-03-25 | 1973-08-07 | Bell Telephone Labor Inc | Germanium doped epitaxial films by the molecular beam method |
| US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
| US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
| JPS4876482A (ja) * | 1972-01-14 | 1973-10-15 | ||
| JPS4876483A (ja) * | 1972-01-14 | 1973-10-15 | ||
| JPS553834B2 (ja) * | 1972-02-26 | 1980-01-26 | ||
| FR2175571B1 (ja) * | 1972-03-14 | 1978-08-25 | Radiotechnique Compelec | |
| US3727115A (en) * | 1972-03-24 | 1973-04-10 | Ibm | Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous |
| JPS5310840B2 (ja) * | 1972-05-04 | 1978-04-17 | ||
| DE2225424C2 (de) * | 1972-05-25 | 1983-07-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer Halbleiterdiode |
| US3914136A (en) * | 1972-11-27 | 1975-10-21 | Rca Corp | Method of making a transmission photocathode device |
| GB1403801A (en) * | 1973-01-30 | 1975-08-28 | Standard Telephones Cables Ltd | Semiconductor device stud mount |
| US3946416A (en) * | 1973-04-24 | 1976-03-23 | The United States Of America As Represented By The Secretary Of The Army | Low impedance diode mounting structure and housing |
| FR2319268A1 (fr) * | 1973-07-03 | 1977-02-18 | Radiotechnique Compelec | Diode electroluminescente protegee |
| US3883888A (en) * | 1973-11-12 | 1975-05-13 | Rca Corp | Efficiency light emitting diode |
| US3929525A (en) * | 1974-06-10 | 1975-12-30 | Rca Corp | Method of forming ohmic contacts |
| US3963536A (en) * | 1974-11-18 | 1976-06-15 | Rca Corporation | Method of making electroluminescent semiconductor devices |
| FR2296264A1 (fr) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | Procede de realisation de dispositif semi-conducteur a heterojonction |
| US4086608A (en) * | 1975-11-28 | 1978-04-25 | The United States Of America As Represented By The Secretary Of The Navy | Light emitting diode |
| US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
| US4347655A (en) * | 1978-09-28 | 1982-09-07 | Optical Information Systems, Inc. | Mounting arrangement for semiconductor optoelectronic devices |
| US4213781A (en) * | 1978-11-20 | 1980-07-22 | Westinghouse Electric Corp. | Deposition of solid semiconductor compositions and novel semiconductor materials |
| US4238252A (en) * | 1979-07-11 | 1980-12-09 | Hughes Aircraft Company | Process for growing indium phosphide of controlled purity |
| US4246050A (en) * | 1979-07-23 | 1981-01-20 | Varian Associates, Inc. | Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system |
| US4479698A (en) * | 1982-05-17 | 1984-10-30 | Rca Corporation | Light emitting assembly and a method of making same |
| EP0470130A4 (en) * | 1989-04-26 | 1992-07-01 | Australian Nuclear Science And Technology Organisation | Liquid phase epitaxy |
| AU626674B2 (en) * | 1989-04-26 | 1992-08-06 | Australian Nuclear Science & Technology Organisation | Liquid phase epitaxy |
| DE19539440C1 (de) * | 1995-10-24 | 1997-04-03 | Rasmussen Gmbh | Federbandschelle |
| US6577658B1 (en) | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
| DE10113444A1 (de) * | 2001-03-01 | 2002-09-19 | Muhr & Bender Kg | Federbandelement |
-
1968
- 1968-11-08 US US774421A patent/US3560275A/en not_active Expired - Lifetime
-
1969
- 1969-10-31 GB GB53514/69A patent/GB1256108A/en not_active Expired
- 1969-11-03 DE DE19691955253 patent/DE1955253A1/de active Pending
- 1969-11-07 JP JP8925869A patent/JPS4839865B1/ja active Pending
- 1969-11-07 FR FR6938483A patent/FR2022910B1/fr not_active Expired
- 1969-11-07 NL NL6916833A patent/NL6916833A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6916833A (ja) | 1970-05-12 |
| FR2022910B1 (ja) | 1975-01-10 |
| GB1256108A (en) | 1971-12-08 |
| US3560275A (en) | 1971-02-02 |
| FR2022910A1 (ja) | 1970-08-07 |
| DE1955253A1 (de) | 1971-02-04 |