JPH1197587A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH1197587A JPH1197587A JP9250583A JP25058397A JPH1197587A JP H1197587 A JPH1197587 A JP H1197587A JP 9250583 A JP9250583 A JP 9250583A JP 25058397 A JP25058397 A JP 25058397A JP H1197587 A JPH1197587 A JP H1197587A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- aluminum base
- aluminum
- warpage
- power module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明はパワーモジュール
等の半導体装置におけるエポキシ樹脂等の充填樹脂の熱
硬化等に起因する金属圧延材からなるベース板の反りの
改善に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in warpage of a base plate made of a rolled metal material due to thermosetting of a filling resin such as an epoxy resin in a semiconductor device such as a power module.
【0002】[0002]
【従来の技術】図6は従来例としてのパワーモジュール
の外観を示す図であり、図において、1はパワーモジュ
ール、2は冷間圧延金属材からなるベース板としてのア
ルミベース板で、冷間圧延方向がその長辺方向と一致す
るように構成されたものである。3はアルミベース板2
を底板とするケース、4は入力信号端子、5は出力電極
端子、6はケース3内に充填された熱硬化樹脂としての
エポキシ樹脂である。2. Description of the Related Art FIG. 6 is a view showing the appearance of a power module as a conventional example. In the figure, reference numeral 1 denotes a power module, and 2 denotes an aluminum base plate as a base plate made of a cold-rolled metal material. The rolling direction is configured to match the long side direction. 3 is aluminum base plate 2
Is a bottom plate, 4 is an input signal terminal, 5 is an output electrode terminal, and 6 is an epoxy resin filled in the case 3 as a thermosetting resin.
【0003】図7は図6に示したパワーモジュール1に
おいて、エポキシ樹脂6を充填する前の外観を示す図で
あり、図において、7は半導体チップとしてのIGBT
チップ、8は半導体チップとしてのICである。なお、
IGBTチップ7、IC8以外の電子部品、後述の銅パ
ターン、前述の入力信号端子4、出力電極端子5等は図
面の煩雑さを避けるために省略されている。FIG. 7 is a view showing the appearance of the power module 1 shown in FIG. 6 before filling it with an epoxy resin 6, wherein 7 denotes an IGBT as a semiconductor chip.
A chip 8 is an IC as a semiconductor chip. In addition,
The electronic components other than the IGBT chip 7 and the IC 8, the copper pattern described later, the input signal terminal 4, the output electrode terminal 5, and the like are omitted to avoid complication of the drawing.
【0004】図8は図6、図7に示したパワーモジュー
ル1におけるアルミベース板2の部分の断面図であり、
図において、9A、9Bは絶縁板、10は接着層、11
A、11Bは薄箔タイプの銅パターン、12は厚箔タイ
プの銅パターンである。FIG. 8 is a sectional view of a portion of the aluminum base plate 2 in the power module 1 shown in FIGS.
In the figure, 9A and 9B are insulating plates, 10 is an adhesive layer, 11
A and 11B are thin foil type copper patterns, and 12 is a thick foil type copper pattern.
【0005】そして、アルミベース板2の一方の面には
絶縁板9Aが接合され、この絶縁板9A上に形成された
厚箔タイプの銅パターン12上にはパワー素子であるI
GBTチップ7がヒートシンク7Aを介して半田付けさ
れており、又、絶縁板9A、接着層10、絶縁板9Bを
介して形成された二層の薄箔タイプの銅パターン11
A、11Bのうちの銅パターン11BにはIC8等の制
御回路部品が半田付けされており、これらアルミベース
板2、絶縁板9A、9B、接着層10、薄箔タイプの銅
パターン11A、11B、厚箔タイプの銅パターン12
等にてアルミ基板部(二層アルミ基板)13が構成され
ている。[0005] An insulating plate 9A is joined to one surface of the aluminum base plate 2, and a power element I is formed on a thick foil type copper pattern 12 formed on the insulating plate 9A.
The GBT chip 7 is soldered via a heat sink 7A, and a two-layer thin foil type copper pattern 11 formed via an insulating plate 9A, an adhesive layer 10, and an insulating plate 9B.
A control circuit component such as an IC 8 is soldered to the copper pattern 11B of A and 11B. The aluminum base plate 2, the insulating plates 9A and 9B, the adhesive layer 10, the thin foil type copper patterns 11A and 11B, Thick foil type copper pattern 12
The aluminum substrate portion (double-layer aluminum substrate) 13 is formed by the above-described method.
【0006】図9は、パワーモジュール1の放熱フィン
への取付けに関する説明図であり、図において、14は
放熱フィン、15は取付用のネジ、16はアルミベース
板2を含むケースの4隅に貫通するネジ15用の貫通
穴、17は放熱フィン14に設けたネジ15対応のネジ
穴(メネジ)を示す。FIG. 9 is an explanatory view relating to the attachment of the power module 1 to the radiating fins. In the drawing, 14 is a radiating fin, 15 is a mounting screw, and 16 is four corners of a case including the aluminum base plate 2. Reference numeral 17 denotes a through hole for the screw 15 that penetrates, and 17 denotes a screw hole (female screw) corresponding to the screw 15 provided in the heat radiation fin 14.
【0007】パワーモジュール1はアルミ基板部13に
おけるアルミベース板2の一方の面側、即ち、入力信号
端子4、出力電極端子5、IGBTチップ7、IC8等
が半田付けされた銅パターン11、12の形成面側の外
周部に外枠の一方の端部を接着してアルミベース板2を
底板とするケース3を形成し、このケース3内に液状の
エポキシ樹脂6を充填して熱硬化することにより製造さ
れ、このパワーモジュール1は放熱フィン14にネジ1
5で締付け固定されてなるものである。The power module 1 has one surface side of the aluminum base plate 2 in the aluminum substrate portion 13, that is, the copper patterns 11, 12 on which the input signal terminal 4, the output electrode terminal 5, the IGBT chip 7, the IC 8 and the like are soldered. A case 3 having an aluminum base plate 2 as a bottom plate is formed by bonding one end of an outer frame to an outer peripheral portion on the side of the surface on which the resin is formed. The power module 1 is manufactured by screwing
5 is tightened and fixed.
【0008】このように構成されたものにおいて、アル
ミベース板2はエポキシ樹脂6の熱硬化時の収縮の影響
を受け、放熱フィン14に接合されるベース面が凸とな
るような反りが発生する。In such a structure, the aluminum base plate 2 is affected by the shrinkage of the epoxy resin 6 at the time of thermosetting, and warps such that the base surface joined to the radiation fin 14 becomes convex. .
【0009】このように、アルミベース板2のベース面
が放熱フィン14の取付面に対して凸に反ったものをネ
ジ15による締付けにより、アルミベース板2のベース
面と放熱フィン14のパワーモジュール取付け面とを密
着させ、パワーモジュール1の発熱を放散する。As described above, the base surface of the aluminum base plate 2 that is warped convexly with respect to the mounting surface of the radiating fins 14 is tightened with the screws 15 so that the power module between the base surface of the aluminum base plate 2 and the radiating fins 14 is formed. The heat generation of the power module 1 is dissipated by closely contacting the mounting surface.
【0010】[0010]
【発明が解決しようとする課題】従来のパワーモジュー
ルは以上のようにアルミベース板2のベース面側、即
ち、放熱フィン14への取付面側に凸状に反った状態
で、放熱フィン14にネジ15で締付け固定するため、
アルミベース板2に、前記反った状態が修正される方向
の応力が作用し、この応力によってアルミベース板2に
直接、若しくは、間接に接合された絶縁板9A、9Bに
クラックが発生し、絶縁耐量が劣化するという問題点が
あった。As described above, the power module according to the prior art is mounted on the radiating fin 14 in a state in which it is warped in a convex manner on the base surface side of the aluminum base plate 2, that is, on the mounting surface side to the radiating fin 14. To tighten and fix with screws 15,
A stress is applied to the aluminum base plate 2 in a direction in which the warped state is corrected, and this stress causes cracks in the insulating plates 9A and 9B joined directly or indirectly to the aluminum base plate 2 to cause insulation. There is a problem that the proof strength is deteriorated.
【0011】この発明は、上記のような問題点を解消す
るためになされたもので、アルミベース板の反り量を低
減し、アルミベース板を放熱フィンに締付け固定する際
における絶縁板のクラックの発生を防止し、絶縁耐圧に
関する信頼性の高い半導体装置を提供することを目的と
する。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is intended to reduce the amount of warpage of an aluminum base plate and to prevent cracks in an insulating plate when the aluminum base plate is fastened and fixed to radiation fins. It is an object of the present invention to provide a semiconductor device which prevents generation and has high reliability regarding dielectric strength.
【0012】[0012]
【課題を解決するための手段】第1の発明に係わる半導
体装置は、一方の面上に半導体チップが搭載された略矩
形の金属圧延材からなるベース板を底板として上記半導
体チップを内包するように構成されたケース内に熱硬化
樹脂が充填され、熱硬化されたものにおいて、上記ベー
ス板における上記金属圧延材の圧延方向と短辺方向と略
一致させたものである。According to a first aspect of the present invention, there is provided a semiconductor device including a base plate made of a substantially rectangular rolled metal material having a semiconductor chip mounted on one surface as a bottom plate and enclosing the semiconductor chip. In a case where a thermosetting resin is filled in a case configured as described above and is thermoset, the rolling direction of the metal rolled material on the base plate is substantially coincident with the short side direction.
【0013】第2の発明に係わる半導体装置は、一方の
面上に半導体チップが搭載された略矩形の金属圧延材か
らなるベース板を底板として上記半導体チップを内包す
るように構成されたケース内に熱硬化樹脂が充填され、
熱硬化されたものにおいて、上記ベース板における上記
金属圧延材の圧延方向と対角線とを略一致させたもので
ある。In a semiconductor device according to a second aspect of the present invention, there is provided a case in which a semiconductor chip is mounted on one surface and a base plate made of a substantially rectangular rolled metal material is used as a bottom plate to house the semiconductor chip. Is filled with thermosetting resin,
In the thermoset, the rolling direction and the diagonal of the rolled metal material on the base plate are substantially matched.
【0014】[0014]
実施の形態1.第1の発明としての実施の形態1を図1
に基づき説明する。図1はパワーモジュールにおけるア
ルミ基板部を構成するアルミベース板を示す平面図であ
る。図中、従来例と同じ符号で示されたものは従来例の
それと同一もしくは同等なものを示す。Embodiment 1 FIG. Embodiment 1 of the first invention is shown in FIG.
It will be described based on. FIG. 1 is a plan view showing an aluminum base plate constituting an aluminum substrate part in the power module. In the figure, those denoted by the same reference numerals as those of the conventional example indicate the same or equivalent parts as those of the conventional example.
【0015】図1において、18はアルミベース板のベ
ース面に残ったローラ圧延跡であり、ローラ圧延跡18
の方向を短辺方向と一致させたものである。即ち、アル
ミベース板材の圧延方向に対する金型打抜き方向を、圧
延方向が短辺方向と一致させたものであり、従来のアル
ミベース板2と区別するために、以下、アルミベース板
20と記す。In FIG. 1, reference numeral 18 denotes a roller rolling trace remaining on the base surface of the aluminum base plate.
Is made to coincide with the direction of the short side. That is, the die punching direction with respect to the rolling direction of the aluminum base plate material is such that the rolling direction matches the short side direction, and is hereinafter referred to as an aluminum base plate 20 to distinguish it from the conventional aluminum base plate 2.
【0016】図2はアルミ基板部13におけるアルミベ
ース板2、20の反り量を測定する際における「方向」
及びその「方向」における「寸法」を定義したものであ
り、aは長辺方向の寸法を示し、bは短辺方向(長辺方
向に直交する方向)の寸法を示す。寸法a、bはそれぞ
れ、アルミベース板2、20の4隅に開口されたネジ1
5用の貫通穴16の長辺、短辺に沿った中心間の距離よ
り求める。FIG. 2 shows the "direction" when measuring the amount of warpage of the aluminum base plates 2 and 20 in the aluminum substrate portion 13.
And a "dimension" in the "direction" is defined, where a indicates a dimension in a long side direction, and b indicates a dimension in a short side direction (a direction orthogonal to the long side direction). Dimensions a and b are screws 1 opened at four corners of aluminum base plates 2 and 20, respectively.
It is determined from the distance between the centers along the long and short sides of the through hole 16 for 5.
【0017】図3は長辺方向と短辺方向の反り量の測定
ポイントを定義したものであり、図3a)にはアルミベ
ース板材の圧延方向と長辺方向とが一致している従来の
アルミベース板2における反り量を、図3b)にはアル
ミベース板材の圧延方向と短辺方向とを一致させたアル
ミベース板20における反り量を示す。なお、アルミベ
ース板2における両端の貫通穴16の中心A、Bと、こ
のA、B間の中心点Cを反り量の測定ポイントとし、反
り量の絶対値はアルミベース板面における中心A、Bを
結んだ線とアルミベース板面における中心点C間の距離
c、dより求める。FIG. 3 defines measurement points of the amount of warpage in the long side direction and the short side direction. FIG. 3a) shows a conventional aluminum sheet in which the rolling direction of the aluminum base plate material coincides with the long side direction. FIG. 3B) shows the amount of warpage in the base plate 2 and FIG. 3B) shows the amount of warpage in the aluminum base plate 20 in which the rolling direction and the short side direction of the aluminum base plate are matched. The centers A and B of the through holes 16 at both ends of the aluminum base plate 2 and the center point C between the holes A and B are used as measurement points of the amount of warpage. It is determined from the distances c and d between the line connecting B and the center point C on the aluminum base plate surface.
【0018】図3より、アルミベース板材の圧延方向
を、アルミベース板の長辺方向と一致させた従来のもの
と、直交させたこの発明の実施の形態1のものについ
て、エポキシ樹脂6の熱硬化の工程における加熱の影響
を、即ち、アルミベース板2、20の反り量の程度を比
較した結果、圧延方向を長辺方向と直交させたこの発明
の実施の形態1のアルミベース板20は、従来のアルミ
ベース板2に比し、反り量の絶対量が小さいことが確認
されている。上記のごとく、アルミベース板材の圧延方
向に対する金型打抜き方向を短辺方向と一致させたアル
ミベース板20の反りは比較的小さく、かつ、バラツキ
も少ない。FIG. 3 shows that the rolling direction of the aluminum base plate is the same as that of the conventional one in which the rolling direction of the aluminum base plate coincides with the long side direction of the aluminum base plate, and that of the first embodiment in which the rolling direction of the aluminum base plate is orthogonal. As a result of comparing the effect of heating in the curing step, that is, the degree of warpage of the aluminum base plates 2 and 20, the aluminum base plate 20 according to the first embodiment of the present invention in which the rolling direction is orthogonal to the long-side direction is obtained. It has been confirmed that the absolute amount of warpage is smaller than that of the conventional aluminum base plate 2. As described above, the warpage of the aluminum base plate 20 in which the die punching direction with respect to the rolling direction of the aluminum base plate material coincides with the short side direction is relatively small, and there is little variation.
【0019】この実施の形態1では、打抜き金型の方向
を、圧延方向がアルミベース板20の短辺方向と一致す
るように決めたので、アルミベース板20の反りが比較
的小さく、放熱フィン14にネジ15によりネジ止めさ
れた場合に受ける応力が比較的小さく、絶縁板9A、9
Bのクラックが生じにくく、高い絶縁耐量を確保できる
効果がある。なお、この実施の形態1はアルミベース板
2の縦横比が比較的大きなもの、例えば、縦横比が1.
5倍以上であるものに適用した場合において顕著な効果
が得られる。In the first embodiment, since the direction of the punching die is determined so that the rolling direction coincides with the short side direction of the aluminum base plate 20, the warpage of the aluminum base plate 20 is relatively small, and the radiation fins are formed. 14 is relatively small in stress when it is screwed to the insulating plates 9A, 9A.
There is an effect that cracks of B hardly occur and a high dielectric strength can be secured. In the first embodiment, the aluminum base plate 2 has a relatively large aspect ratio, for example, the aspect ratio is 1.
A remarkable effect can be obtained when it is applied to a material having a factor of 5 or more.
【0020】実施の形態2.次に、第2の発明としての
実施の形態2を図4及び図5に基づいて説明する。図4
はパワーモジュール1におけるアルミ基板部を構成する
アルミベース板を示す平面図であり、21は圧延方向を
対角線方向に一致させたアルミベース板である。即ち、
アルミベース板21のベース面に残ったローラ圧延跡1
8より明らかのように、圧延方向と対角線方向とを一致
させたものである。Embodiment 2 Next, a second embodiment of the present invention will be described with reference to FIGS. FIG.
FIG. 2 is a plan view showing an aluminum base plate constituting an aluminum substrate part in the power module 1, and reference numeral 21 denotes an aluminum base plate whose rolling direction is made to coincide with a diagonal direction. That is,
Roller rolling trace 1 remaining on the base surface of aluminum base plate 21
As is clear from FIG. 8, the rolling direction and the diagonal direction are matched.
【0021】図5は、図4に示したアルミベース板21
を備えたパワーモジュール1を放熱フィン14にネジ止
めする際における、4本のネジ15の締付け順序を示す
説明図であり、最初に、圧延方向に直交した対角線側の
ネジ15A、15Cを締付け、然る後に圧延方向と一致
した対角線側のネジ15B、15Dを締付ける。FIG. 5 shows the aluminum base plate 21 shown in FIG.
It is an explanatory view showing a tightening order of four screws 15 when screwing the power module 1 provided with the heat radiating fins 14, firstly tightening diagonal screws 15 A, 15 C orthogonal to the rolling direction, Thereafter, the screws 15B and 15D on the diagonal side corresponding to the rolling direction are tightened.
【0022】圧延方向と一致した対角線方向における変
形量は比較的大きなものとなるが、最初に変形量の比較
的小さな圧延方向に直交した対角線側のネジ15A、1
5Cを締付けるので、変形量の比較的大きな圧延方向と
一致した対角線側のネジ15B、15Dの締付時には、
アルミベース板21の中央凸部が放熱フィン14に固定
されており、ネジ締付による基板部13にかかる応力を
低減でき、絶縁板9A、9Bのクラックの発生による絶
縁耐量の低下を防止できる。なお、この第2の発明はア
ルミベース板2の縦横比が比較的小さなもの、例えば縦
横比1.5倍以下であるものに適用した場合において顕
著な効果が得られる。Although the amount of deformation in the diagonal direction coincident with the rolling direction is relatively large, first, the diagonal screws 15A, 1A, 1A,
Since 5C is tightened, when tightening the diagonal screws 15B and 15D that match the rolling direction in which the deformation amount is relatively large,
The central convex portion of the aluminum base plate 21 is fixed to the radiation fins 14, so that the stress applied to the substrate portion 13 due to screw tightening can be reduced, and a decrease in the dielectric strength due to the occurrence of cracks in the insulating plates 9A and 9B can be prevented. It should be noted that the second invention has a remarkable effect when applied to an aluminum base plate 2 having a relatively small aspect ratio, for example, one having an aspect ratio of 1.5 or less.
【0023】上記、実施の形態1又は2においては、ア
ルミ基板部13が二層アルミ基板である場合の例につい
て説明したが、アルミ基板部にかかる応力の低減による
絶縁板9A、9Bのクラックの発生を防止し、絶縁耐量
劣化を防止する効果は、銅パターン層が一層の場合で
も、又、二層以上の多層アルミ基板である場合にも有効
である。In the first or second embodiment, the example in which the aluminum substrate 13 is a two-layer aluminum substrate has been described. However, cracks in the insulating plates 9A and 9B due to the reduction of the stress applied to the aluminum substrate are reduced. The effect of preventing the occurrence and the deterioration of the dielectric strength is effective even when the copper pattern layer is a single layer, or when the multilayer aluminum substrate has two or more layers.
【0024】又、ベース板として、略矩形の金属圧延材
からなるアルミベース板2を例に示したが、アルミの圧
延材に限定されるものではなく、銅、真鍮、その他所定
の展性と熱伝導性を備えた金属であっても効果が得られ
る。Further, as the base plate, an aluminum base plate 2 made of a substantially rectangular rolled metal material is shown as an example. However, the present invention is not limited to a rolled aluminum material, but may be made of copper, brass, or any other material having a predetermined malleability. The effect can be obtained even with a metal having thermal conductivity.
【0025】[0025]
【発明の効果】第1の発明によれば、略矩形の金属圧延
材からなるベース板における前記金属圧延材の圧延方向
と短辺方向と略一致させたので、ベース板の反りが比較
的小さく、放熱フィンにネジ止めされた場合に受ける応
力が比較的小さいので、絶縁層9のクラックが生じにく
く、高い絶縁耐量を確保できるものが得られる効果があ
る。According to the first aspect of the present invention, since the rolling direction and the short side direction of the rolled metal material in the base plate made of the substantially rectangular rolled metal material are substantially coincident with each other, the warpage of the base plate is relatively small. In addition, since the stress received when screwed to the radiation fin is relatively small, cracks in the insulating layer 9 are less likely to occur, and an effect that a high dielectric strength can be ensured can be obtained.
【0026】又、第2の発明によれば、略矩形の金属圧
延材からなるベース板における上記金属圧延材の圧延方
向と対角線とを略一致させ、最初に圧延方向に直交した
対角線側のネジを締付け、然る後に圧延方向と一致した
対角線側のネジを締付けるようにしたので、基板部にか
かる応力を低減でき、クラックの発生と絶縁耐量の劣化
を改善できるものが得られる効果がある。According to the second invention, the rolling direction and the diagonal line of the metal rolled material in the base plate made of the substantially rectangular metal rolled material are substantially coincident with each other, and the screw on the diagonal side perpendicular to the rolling direction is first set. Is tightened, and then the screws on the diagonal side that match the rolling direction are tightened, so that the stress applied to the substrate portion can be reduced, and there is an effect that cracks can be generated and dielectric strength can be reduced.
【図1】 第1の発明の実施の形態としてのパワーモジ
ュールにおけるアルミ基板部を構成するアルミベース板
を示す平面図である。FIG. 1 is a plan view showing an aluminum base plate constituting an aluminum substrate part in a power module according to an embodiment of the first invention.
【図2】 アルミベース板の反り量を測定する際におけ
る「方向」及びその「方向」における「寸法」の定義例
を示す図である。FIG. 2 is a diagram showing a definition example of “direction” and “dimension” in the “direction” when measuring the amount of warpage of an aluminum base plate.
【図3】 長辺方向と、この長辺方向に直交する方向の
反り量の測定ポイントの定義例を示す図である。FIG. 3 is a diagram illustrating an example of definitions of measurement points of the amount of warpage in a long side direction and a direction orthogonal to the long side direction.
【図4】 第2の発明の実施の形態としてのパワーモジ
ュールにおけるアルミ基板部を構成するアルミベース板
を示す平面図である。FIG. 4 is a plan view showing an aluminum base plate constituting an aluminum substrate in a power module according to an embodiment of the second invention.
【図5】 図4に示したアルミベース板2を放熱フィン
にネジ止めするネジの締付け順序を示す図である。5 is a diagram showing a tightening order of screws for screwing the aluminum base plate 2 shown in FIG. 4 to the radiation fins.
【図6】 従来のパワーモジュールの外観を示す図であ
る。FIG. 6 is a diagram showing an appearance of a conventional power module.
【図7】 図6に示したパワーモジュールにおける熱硬
化樹脂充填前の外観を示す図である。FIG. 7 is a view showing an appearance of the power module shown in FIG. 6 before filling with a thermosetting resin.
【図8】 図6及び図7に示したパワーモジュールにお
けるアルミ基板部の断面図である。FIG. 8 is a cross-sectional view of an aluminum substrate part in the power module shown in FIGS. 6 and 7.
【図9】 パワーモジュールの放熱フィンへの取付け説
明図である。FIG. 9 is an explanatory view of attaching a power module to a radiation fin.
1 パワーモジュール、2 アルミベース板、3 ケー
ス、4 入力信号端子、5 出力電極端子、6 エポキ
シ樹脂、7 IGBTチップ、8 IC、9A絶縁板、
9B 絶縁板、10 接着層、11 薄箔タイプの銅パ
ターン、12厚箔タイプの銅パターン、13 アルミ基
板部、14 放熱フィン、15 ネジ、16 貫通穴、
17 ネジ穴、18 ローラ圧延跡、19 溝、20、
21アルミベース板。1 power module, 2 aluminum base plate, 3 case, 4 input signal terminal, 5 output electrode terminal, 6 epoxy resin, 7 IGBT chip, 8 IC, 9A insulating plate,
9B insulating plate, 10 adhesive layer, 11 thin foil type copper pattern, 12 thick foil type copper pattern, 13 aluminum substrate part, 14 heat radiation fin, 15 screw, 16 through hole,
17 screw holes, 18 roller rolling marks, 19 grooves, 20,
21 aluminum base plate.
Claims (2)
略矩形の金属圧延材からなるベース板を底板として上記
半導体チップを内包するように構成されたケース内に熱
硬化樹脂が充填され、熱硬化された半導体装置におい
て、上記ベース板は、上記金属圧延材の圧延方向が上記
ベース板の短辺方向と略一致することを特徴とする半導
体装置。1. A thermosetting resin is filled in a case configured to enclose the semiconductor chip with a base plate made of a substantially rectangular rolled metal material having a semiconductor chip mounted on one surface as a bottom plate, In the thermoset semiconductor device, a rolling direction of the rolled metal material substantially coincides with a short side direction of the base plate.
略矩形の金属圧延材からなるベース板を底板として上記
半導体チップを内包するように構成されたケース内に熱
硬化樹脂が充填され、熱硬化された半導体装置におい
て、上記ベース板は、上記金属圧延材の圧延方向が上記
ベース板の対角線と略一致することを特徴とする半導体
装置。2. A thermosetting resin is filled in a case configured to include the semiconductor chip with a base plate made of a substantially rectangular rolled metal material having a semiconductor chip mounted on one surface as a bottom plate, In the thermoset semiconductor device, a rolling direction of the rolled metal material substantially coincides with a diagonal line of the base plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP25058397A JP3552484B2 (en) | 1997-09-16 | 1997-09-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25058397A JP3552484B2 (en) | 1997-09-16 | 1997-09-16 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH1197587A true JPH1197587A (en) | 1999-04-09 |
JP3552484B2 JP3552484B2 (en) | 2004-08-11 |
Family
ID=17210056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP25058397A Expired - Lifetime JP3552484B2 (en) | 1997-09-16 | 1997-09-16 | Semiconductor device |
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JP (1) | JP3552484B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013033601A3 (en) * | 2011-09-02 | 2013-04-25 | Wolverine Tube, Inc. | Enhanced clad metal base plate |
WO2015097973A1 (en) * | 2013-12-27 | 2015-07-02 | 株式会社Joled | Organic el panel unit and organic el display device |
US9655294B2 (en) | 2010-07-28 | 2017-05-16 | Wolverine Tube, Inc. | Method of producing electronics substrate with enhanced direct bonded metal |
US9795057B2 (en) | 2010-07-28 | 2017-10-17 | Wolverine Tube, Inc. | Method of producing a liquid cooled coldplate |
US10531594B2 (en) | 2010-07-28 | 2020-01-07 | Wieland Microcool, Llc | Method of producing a liquid cooled coldplate |
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JPH0210860A (en) * | 1988-06-29 | 1990-01-16 | Fujitsu Ltd | Lead frame for semiconductor device |
JPH06119736A (en) * | 1992-10-05 | 1994-04-28 | Hitachi Ltd | Head slider supporting device |
JPH09237869A (en) * | 1996-02-29 | 1997-09-09 | Hitachi Ltd | Resin-encapsulated power module device and manufacture thereof |
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1997
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0210860A (en) * | 1988-06-29 | 1990-01-16 | Fujitsu Ltd | Lead frame for semiconductor device |
JPH06119736A (en) * | 1992-10-05 | 1994-04-28 | Hitachi Ltd | Head slider supporting device |
JPH09237869A (en) * | 1996-02-29 | 1997-09-09 | Hitachi Ltd | Resin-encapsulated power module device and manufacture thereof |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9655294B2 (en) | 2010-07-28 | 2017-05-16 | Wolverine Tube, Inc. | Method of producing electronics substrate with enhanced direct bonded metal |
US9681580B2 (en) | 2010-07-28 | 2017-06-13 | Wolverine Tube, Inc. | Method of producing an enhanced base plate |
US9795057B2 (en) | 2010-07-28 | 2017-10-17 | Wolverine Tube, Inc. | Method of producing a liquid cooled coldplate |
US10531594B2 (en) | 2010-07-28 | 2020-01-07 | Wieland Microcool, Llc | Method of producing a liquid cooled coldplate |
WO2013033601A3 (en) * | 2011-09-02 | 2013-04-25 | Wolverine Tube, Inc. | Enhanced clad metal base plate |
WO2015097973A1 (en) * | 2013-12-27 | 2015-07-02 | 株式会社Joled | Organic el panel unit and organic el display device |
JPWO2015097973A1 (en) * | 2013-12-27 | 2017-03-23 | 株式会社Joled | Organic EL panel unit and organic EL display device |
US9780339B2 (en) | 2013-12-27 | 2017-10-03 | Joled Inc. | Organic electroluminescent panel unit |
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