JP3552484B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP3552484B2
JP3552484B2 JP25058397A JP25058397A JP3552484B2 JP 3552484 B2 JP3552484 B2 JP 3552484B2 JP 25058397 A JP25058397 A JP 25058397A JP 25058397 A JP25058397 A JP 25058397A JP 3552484 B2 JP3552484 B2 JP 3552484B2
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Japan
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base plate
aluminum base
aluminum
power module
rolling direction
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JPH1197587A (en
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英樹 舌間
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
この発明はパワーモジュール等の半導体装置におけるエポキシ樹脂等の充填樹脂の熱硬化等に起因する金属圧延材からなるベース板の反りの改善に関するものである。
【０００２】
【従来の技術】
図６は従来例としてのパワーモジュールの外観を示す図であり、図において、１はパワーモジュール、２は冷間圧延金属材からなるベース板としてのアルミベース板で、冷間圧延方向がその長辺方向と一致するように構成されたものである。３はアルミベース板２を底板とするケース、４は入力信号端子、５は出力電極端子、６はケース３内に充填された熱硬化樹脂としてのエポキシ樹脂である。
【０００３】
図７は図６に示したパワーモジュール１において、エポキシ樹脂６を充填する前の外観を示す図であり、図において、７は半導体チップとしてのＩＧＢＴチップ、８は半導体チップとしてのＩＣである。なお、ＩＧＢＴチップ７、ＩＣ８以外の電子部品、後述の銅パターン、前述の入力信号端子４、出力電極端子５等は図面の煩雑さを避けるために省略されている。
【０００４】
図８は図６、図７に示したパワーモジュール１におけるアルミベース板２の部分の断面図であり、図において、９Ａ、９Ｂは絶縁板、１０は接着層、１１Ａ、１１Ｂは薄箔タイプの銅パターン、１２は厚箔タイプの銅パターンである。
【０００５】
そして、アルミベース板２の一方の面には絶縁板９Ａが接合され、この絶縁板９Ａ上に形成された厚箔タイプの銅パターン１２上にはパワー素子であるＩＧＢＴチップ７がヒートシンク７Ａを介して半田付けされており、又、絶縁板９Ａ、接着層１０、絶縁板９Ｂを介して形成された二層の薄箔タイプの銅パターン１１Ａ、１１Ｂのうちの銅パターン１１ＢにはＩＣ８等の制御回路部品が半田付けされており、これらアルミベース板２、絶縁板９Ａ、９Ｂ、接着層１０、薄箔タイプの銅パターン１１Ａ、１１Ｂ、厚箔タイプの銅パターン１２等にてアルミ基板部（二層アルミ基板）１３が構成されている。
【０００６】
図９は、パワーモジュール１の放熱フィンへの取付けに関する説明図であり、図において、１４は放熱フィン、１５は取付用のネジ、１６はアルミベース板２を含むケースの４隅に貫通するネジ１５用の貫通穴、１７は放熱フィン１４に設けたネジ１５対応のネジ穴（メネジ）を示す。
【０００７】
パワーモジュール１はアルミ基板部１３におけるアルミベース板２の一方の面側、即ち、入力信号端子４、出力電極端子５、ＩＧＢＴチップ７、ＩＣ８等が半田付けされた銅パターン１１、１２の形成面側の外周部に外枠の一方の端部を接着してアルミベース板２を底板とするケース３を形成し、このケース３内に液状のエポキシ樹脂６を充填して熱硬化することにより製造され、このパワーモジュール１は放熱フィン１４にネジ１５で締付け固定されてなるものである。
【０００８】
このように構成されたものにおいて、アルミベース板２はエポキシ樹脂６の熱硬化時の収縮の影響を受け、放熱フィン１４に接合されるベース面が凸となるような反りが発生する。
【０００９】
このように、アルミベース板２のベース面が放熱フィン１４の取付面に対して凸に反ったものをネジ１５による締付けにより、アルミベース板２のベース面と放熱フィン１４のパワーモジュール取付け面とを密着させ、パワーモジュール１の発熱を放散する。
【００１０】
【発明が解決しようとする課題】
従来のパワーモジュールは以上のようにアルミベース板２のベース面側、即ち、放熱フィン１４への取付面側に凸状に反った状態で、放熱フィン１４にネジ１５で締付け固定するため、アルミベース板２に、前記反った状態が修正される方向の応力が作用し、この応力によってアルミベース板２に直接、若しくは、間接に接合された絶縁板９Ａ、９Ｂにクラックが発生し、絶縁耐量が劣化するという問題点があった。
【００１１】
この発明は、上記のような問題点を解消するためになされたもので、アルミベース板の反り量を低減し、アルミベース板を放熱フィンに締付け固定する際における絶縁板のクラックの発生を防止し、絶縁耐圧に関する信頼性の高い半導体装置を提供することを目的とする。
【００１２】
【課題を解決するための手段】
第１の発明に係わる半導体装置は、一方の面上に半導体チップが搭載された略矩形の金属圧延材からなるベース板を底板として上記半導体チップを内包するように構成されたケース内に熱硬化樹脂が充填され、熱硬化されたものにおいて、上記ベース板における上記金属圧延材の圧延方向と短辺方向と一致させたものである。
【００１３】
第２の発明に係わる半導体装置は、一方の面上に半導体チップが搭載された略矩形の金属圧延材からなるベース板を底板として上記半導体チップを内包するように構成されたケース内に熱硬化樹脂が充填され、熱硬化されたものにおいて、上記ベース板における上記金属圧延材の圧延方向と対角線とを一致させたものである。
【００１４】
【発明の実施の形態】
実施の形態１．
第１の発明としての実施の形態１を図１に基づき説明する。図１はパワーモジュールにおけるアルミ基板部を構成するアルミベース板を示す平面図である。図中、従来例と同じ符号で示されたものは従来例のそれと同一もしくは同等なものを示す。
【００１５】
図１において、１８はアルミベース板のベース面に残ったローラ圧延跡であり、ローラ圧延跡１８の方向を短辺方向と一致させたものである。即ち、アルミベース板材の圧延方向に対する金型打抜き方向を、圧延方向が短辺方向と一致させたものであり、従来のアルミベース板２と区別するために、以下、アルミベース板２０と記す。
【００１６】
図２はアルミ基板部１３におけるアルミベース板２、２０の反り量を測定する際における「方向」及びその「方向」における「寸法」を定義したものであり、ａは長辺方向の寸法を示し、ｂは短辺方向（長辺方向に直交する方向）の寸法を示す。寸法ａ、ｂはそれぞれ、アルミベース板２、２０の４隅に開口されたネジ１５用の貫通穴１６の長辺、短辺に沿った中心間の距離より求める。
【００１７】
図３は長辺方向と短辺方向の反り量の測定ポイントを定義したものであり、図３ａ）にはアルミベース板材の圧延方向と長辺方向とが一致している従来のアルミベース板２における反り量を、図３ｂ）にはアルミベース板材の圧延方向と短辺方向とを一致させたアルミベース板２０における反り量を示す。
なお、アルミベース板２における両端の貫通穴１６の中心Ａ、Ｂと、このＡ、Ｂ間の中心点Ｃを反り量の測定ポイントとし、反り量の絶対値はアルミベース板面における中心Ａ、Ｂを結んだ線とアルミベース板面における中心点Ｃ間の距離ｃ、ｄより求める。
【００１８】
図３より、アルミベース板材の圧延方向を、アルミベース板の長辺方向と一致させた従来のものと、直交させたこの発明の実施の形態１のものについて、エポキシ樹脂６の熱硬化の工程における加熱の影響を、即ち、アルミベース板２、２０の反り量の程度を比較した結果、圧延方向を長辺方向と直交させたこの発明の実施の形態１のアルミベース板２０は、従来のアルミベース板２に比し、反り量の絶対量が小さいことが確認されている。上記のごとく、アルミベース板材の圧延方向に対する金型打抜き方向を短辺方向と一致させたアルミベース板２０の反りは比較的小さく、かつ、バラツキも少ない。
【００１９】
この実施の形態１では、打抜き金型の方向を、圧延方向がアルミベース板２０の短辺方向と一致するように決めたので、アルミベース板２０の反りが比較的小さく、放熱フィン１４にネジ１５によりネジ止めされた場合に受ける応力が比較的小さく、絶縁板９Ａ、９Ｂのクラックが生じにくく、高い絶縁耐量を確保できる効果がある。
なお、この実施の形態１はアルミベース板２の縦横比が比較的大きなもの、例えば、縦横比が１．５倍以上であるものに適用した場合において顕著な効果が得られる。
【００２０】
実施の形態２．
次に、第２の発明としての実施の形態２を図４及び図５に基づいて説明する。図４はパワーモジュール１におけるアルミ基板部を構成するアルミベース板を示す平面図であり、２１は圧延方向を対角線方向に一致させたアルミベース板である。即ち、アルミベース板２１のベース面に残ったローラ圧延跡１８より明らかのように、圧延方向と対角線方向とを一致させたものである。
【００２１】
図５は、図４に示したアルミベース板２１を備えたパワーモジュール１を放熱フィン１４にネジ止めする際における、４本のネジ１５の締付け順序を示す説明図であり、最初に、圧延方向に直交した対角線側のネジ１５Ａ、１５Ｃを締付け、然る後に圧延方向と一致した対角線側のネジ１５Ｂ、１５Ｄを締付ける。
【００２２】
圧延方向と一致した対角線方向における変形量は比較的大きなものとなるが、最初に変形量の比較的小さな圧延方向に直交した対角線側のネジ１５Ａ、１５Ｃを締付けるので、変形量の比較的大きな圧延方向と一致した対角線側のネジ１５Ｂ、１５Ｄの締付時には、アルミベース板２１の中央凸部が放熱フィン１４に固定されており、ネジ締付による基板部１３にかかる応力を低減でき、絶縁板９Ａ、９Ｂのクラックの発生による絶縁耐量の低下を防止できる。
なお、この第２の発明はアルミベース板２の縦横比が比較的小さなもの、例えば縦横比１．５倍以下であるものに適用した場合において顕著な効果が得られる。
【００２３】
上記、実施の形態１又は２においては、アルミ基板部１３が二層アルミ基板である場合の例について説明したが、アルミ基板部にかかる応力の低減による絶縁板９Ａ、９Ｂのクラックの発生を防止し、絶縁耐量劣化を防止する効果は、銅パターン層が一層の場合でも、又、二層以上の多層アルミ基板である場合にも有効である。
【００２４】
又、ベース板として、略矩形の金属圧延材からなるアルミベース板２を例に示したが、アルミの圧延材に限定されるものではなく、銅、真鍮、その他所定の展性と熱伝導性を備えた金属であっても効果が得られる。
【００２５】
【発明の効果】
第１の発明によれば、略矩形の金属圧延材からなるベース板における前記金属圧延材の圧延方向と短辺方向と一致させたもので、ベース板の反りが比較的小さく、放熱フィンにネジ止めされた場合に受ける応力が比較的小さいので、絶縁層９のクラックが生じにくく、高い絶縁耐量を確保できるものが得られる効果がある。
【００２６】
又、第２の発明によれば、略矩形の金属圧延材からなるベース板における上記金属圧延材の圧延方向と対角線とを一致させ、最初に圧延方向に直交した対角線側のネジ締め付け、然る後に圧延方向と一致した対角線側のネジを締め付けるようにしたので、基板部にかかる応力を低減でき、クラックの発生と絶縁耐量の劣化を改善できるものが得られる効果がある。
【図面の簡単な説明】
【図１】第１の発明の実施の形態としてのパワーモジュールにおけるアルミ基板部を構成するアルミベース板を示す平面図である。
【図２】アルミベース板の反り量を測定する際における「方向」及びその「方向」における「寸法」の定義例を示す図である。
【図３】長辺方向と、この長辺方向に直交する方向の反り量の測定ポイントの定義例を示す図である。
【図４】第２の発明の実施の形態としてのパワーモジュールにおけるアルミ基板部を構成するアルミベース板を示す平面図である。
【図５】図４に示したアルミベース板２を放熱フィンにネジ止めするネジの締付け順序を示す図である。
【図６】従来のパワーモジュールの外観を示す図である。
【図７】図６に示したパワーモジュールにおける熱硬化樹脂充填前の外観を示す図である。
【図８】図６及び図７に示したパワーモジュールにおけるアルミ基板部の断面図である。
【図９】パワーモジュールの放熱フィンへの取付け説明図である。
【符号の説明】
１ パワーモジュール、２ アルミベース板、３ ケース、４ 入力信号端子、５ 出力電極端子、６ エポキシ樹脂、７ ＩＧＢＴチップ、８ ＩＣ、９Ａ 絶縁板、９Ｂ 絶縁板、１０ 接着層、１１ 薄箔タイプの銅パターン、１２ 厚箔タイプの銅パターン、１３ アルミ基板部、１４ 放熱フィン、１５ ネジ、１６ 貫通穴、１７ ネジ穴、１８ ローラ圧延跡、１９ 溝、２０、２１ アルミベース板。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to improvement of warpage of a base plate made of a rolled metal material due to thermal curing of a filling resin such as an epoxy resin in a semiconductor device such as a power module.
[0002]
[Prior art]
FIG. 6 is a view showing the appearance of a power module as a conventional example. In the figure, reference numeral 1 denotes a power module, 2 denotes an aluminum base plate as a base plate made of a cold-rolled metal material, and its cold rolling direction is long. It is configured so as to coincide with the side direction. Reference numeral 3 denotes a case using the aluminum base plate 2 as a bottom plate, 4 denotes an input signal terminal, 5 denotes an output electrode terminal, and 6 denotes an epoxy resin filled in the case 3 as a thermosetting resin.
[0003]
FIG. 7 is a view showing the appearance of the power module 1 shown in FIG. 6 before filling with the epoxy resin 6, wherein 7 is an IGBT chip as a semiconductor chip, and 8 is an IC as a semiconductor chip. Note that electronic components other than the IGBT chip 7 and the IC 8, a copper pattern described later, the input signal terminal 4, the output electrode terminal 5, and the like are omitted to avoid complication of the drawing.
[0004]
FIG. 8 is a cross-sectional view of the aluminum base plate 2 in the power module 1 shown in FIGS. 6 and 7, where 9A and 9B are insulating plates, 10 is an adhesive layer, and 11A and 11B are thin foil type. The copper pattern 12 is a thick foil type copper pattern.
[0005]
An insulating plate 9A is joined to one surface of the aluminum base plate 2, and an IGBT chip 7 as a power element is placed on a thick foil type copper pattern 12 formed on the insulating plate 9A via a heat sink 7A. Of the two-layer thin foil type copper patterns 11A and 11B formed through the insulating plate 9A, the adhesive layer 10 and the insulating plate 9B, and the IC 8 and the like are controlled. The circuit components are soldered, and the aluminum base plate 2, the insulating plates 9A and 9B, the adhesive layer 10, the thin foil type copper patterns 11A and 11B, the thick foil type copper pattern 12 and the like are used to form an aluminum substrate part (not shown). (A layer aluminum substrate) 13 is formed.
[0006]
FIG. 9 is an explanatory diagram relating to the attachment of the power module 1 to the radiation fins. In the figure, 14 is a radiation fin, 15 is a screw for attachment, and 16 is a screw penetrating through four corners of a case including the aluminum base plate 2. Reference numeral 15 denotes a through hole, and reference numeral 17 denotes a screw hole (female screw) corresponding to the screw 15 provided on the radiation fin 14.
[0007]
The power module 1 has one surface side of the aluminum base plate 2 in the aluminum substrate portion 13, that is, the surface on which the copper patterns 11, 12 to which the input signal terminals 4, the output electrode terminals 5, the IGBT chips 7, the ICs 8 and the like are soldered. A case 3 having an aluminum base plate 2 as a bottom plate is formed by bonding one end of an outer frame to an outer peripheral portion on the side, and the case 3 is filled with a liquid epoxy resin 6 and thermoset to manufacture. The power module 1 is fastened and fixed to the radiation fins 14 with screws 15.
[0008]
In such a configuration, the aluminum base plate 2 is affected by the shrinkage of the epoxy resin 6 at the time of thermosetting, and warps such that the base surface joined to the radiation fin 14 becomes convex.
[0009]
In this way, the base surface of the aluminum base plate 2 that is warped convexly with respect to the mounting surface of the radiating fins 14 is tightened with the screw 15 so that the base surface of the aluminum base plate 2 and the power module mounting surface of the radiating fins 14 are separated. To dissipate the heat generated by the power module 1.
[0010]
[Problems to be solved by the invention]
As described above, the conventional power module is fixed to the radiating fin 14 with the screw 15 while being warped in a convex shape on the base surface side of the aluminum base plate 2, that is, the mounting surface side to the radiating fin 14. A stress is applied to the base plate 2 in a direction in which the warped state is corrected, and the stress causes cracks in the insulating plates 9A and 9B directly or indirectly joined to the aluminum base plate 2, thereby causing a dielectric strength. However, there is a problem in that the metal is deteriorated.
[0011]
The present invention has been made to solve the above-described problems, and reduces the amount of warpage of the aluminum base plate and prevents the occurrence of cracks in the insulating plate when the aluminum base plate is fastened and fixed to the radiation fins. It is another object of the present invention to provide a semiconductor device having high withstand voltage.
[0012]
[Means for Solving the Problems]
A semiconductor device according to a first aspect of the present invention provides a semiconductor device in which a semiconductor chip is mounted on one surface and a base plate made of a substantially rectangular metal rolled material is used as a bottom plate. In a resin-filled and heat-cured resin, the rolling direction of the rolled metal material on the base plate coincides with the short side direction.
[0013]
A semiconductor device according to a second aspect of the present invention is characterized in that a base plate made of a substantially rectangular rolled metal material having a semiconductor chip mounted on one surface is used as a bottom plate and a thermosetting case is formed in a case configured to contain the semiconductor chip. In a resin-filled and heat-cured resin, the rolling direction of the metal rolled material on the base plate is matched with a diagonal line.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Embodiment 1 FIG.
Embodiment 1 of the first invention will be described with reference to FIG. FIG. 1 is a plan view showing an aluminum base plate constituting an aluminum substrate part in the power module. In the figure, those denoted by the same reference numerals as those of the conventional example indicate the same or equivalent parts as those of the conventional example.
[0015]
In FIG. 1, reference numeral 18 denotes a roller rolling trace remaining on the base surface of the aluminum base plate, in which the direction of the roller rolling trace 18 coincides with the short side direction. That is, the die punching direction with respect to the rolling direction of the aluminum base plate material is such that the rolling direction matches the short side direction, and is hereinafter referred to as an aluminum base plate 20 to distinguish it from the conventional aluminum base plate 2.
[0016]
FIG. 2 defines the “direction” and the “dimension” in the “direction” when measuring the amount of warpage of the aluminum base plates 2 and 20 in the aluminum substrate portion 13, and “a” indicates the dimension in the long side direction. , B indicate the dimension in the short side direction (the direction orthogonal to the long side direction). The dimensions a and b are determined from the distance between the centers along the long and short sides of the through holes 16 for the screws 15 opened at the four corners of the aluminum base plates 2 and 20, respectively.
[0017]
FIG. 3 defines measurement points of the amount of warpage in the long side direction and the short side direction. FIG. 3a) shows a conventional aluminum base plate 2 in which the rolling direction of the aluminum base plate material and the long side direction match. 3b) shows the amount of warpage in the aluminum base plate 20 in which the rolling direction of the aluminum base plate material and the short side direction are matched.
The centers A and B of the through holes 16 at both ends of the aluminum base plate 2 and the center point C between the holes A and B are used as measurement points of the amount of warpage. It is determined from the distances c and d between the line connecting B and the center point C on the aluminum base plate surface.
[0018]
From FIG. 3, the thermosetting process of the epoxy resin 6 was performed between the conventional one in which the rolling direction of the aluminum base plate material was made to match the long side direction of the aluminum base plate and the one in the first embodiment of the present invention in which the rolling direction was orthogonal. As a result of comparing the effect of heating in the above, that is, the degree of warpage of the aluminum base plates 2 and 20, the aluminum base plate 20 of the first embodiment of the present invention, in which the rolling direction is orthogonal to the long side direction, is a conventional one. It has been confirmed that the absolute amount of warpage is smaller than that of the aluminum base plate 2. As described above, the warpage of the aluminum base plate 20 in which the die punching direction with respect to the rolling direction of the aluminum base plate material coincides with the short side direction is relatively small, and there is little variation.
[0019]
In the first embodiment, since the direction of the punching die is determined so that the rolling direction coincides with the short side direction of the aluminum base plate 20, the warpage of the aluminum base plate 20 is relatively small. When the screws 15 are used, the stress received is relatively small, cracks in the insulating plates 9A and 9B are hardly generated, and there is an effect that a high dielectric strength can be secured.
The first embodiment has a remarkable effect when applied to an aluminum base plate 2 having a relatively large aspect ratio, for example, an aluminum base plate having an aspect ratio of 1.5 or more.
[0020]
Embodiment 2 FIG.
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 4 is a plan view showing an aluminum base plate constituting an aluminum substrate part in the power module 1, and reference numeral 21 denotes an aluminum base plate whose rolling direction is made to coincide with a diagonal direction. That is, as is apparent from the roller rolling traces 18 remaining on the base surface of the aluminum base plate 21, the rolling direction and the diagonal direction are matched.
[0021]
FIG. 5 is an explanatory diagram showing a tightening order of four screws 15 when screwing the power module 1 having the aluminum base plate 21 shown in FIG. The screws 15A and 15C on the diagonal side perpendicular to the above are tightened, and then the screws 15B and 15D on the diagonal side corresponding to the rolling direction are tightened.
[0022]
Although the amount of deformation in the diagonal direction coincident with the rolling direction becomes relatively large, first, the screws 15A and 15C on the diagonal side perpendicular to the rolling direction in which the amount of deformation is relatively small are tightened. At the time of tightening the screws 15B and 15D on the diagonal side corresponding to the direction, the central convex portion of the aluminum base plate 21 is fixed to the radiating fin 14, so that the stress applied to the substrate portion 13 due to the screw tightening can be reduced, and the insulating plate It is possible to prevent a decrease in the dielectric strength due to occurrence of cracks in 9A and 9B.
It should be noted that the second invention has a remarkable effect when applied to an aluminum base plate 2 having a relatively small aspect ratio, for example, one having an aspect ratio of 1.5 or less.
[0023]
In the first or second embodiment described above, the example in which the aluminum substrate 13 is a two-layer aluminum substrate has been described. However, the occurrence of cracks in the insulating plates 9A and 9B due to the reduction of the stress applied to the aluminum substrate is prevented. However, the effect of preventing the deterioration of the dielectric strength is effective even when the copper pattern layer is a single layer or a multilayer aluminum substrate having two or more layers.
[0024]
Further, as an example of the base plate, an aluminum base plate 2 made of a substantially rectangular metal rolled material has been described, but the present invention is not limited to a rolled aluminum material, but may be copper, brass, or other predetermined malleability and heat conductivity. The effect can be obtained even with a metal having
[0025]
【The invention's effect】
According to the first invention, in the base plate made of a substantially rectangular metal rolled material, the rolling direction of the metal rolled material coincides with the short-side direction. Since the stress received when stopping is relatively small, cracking of the insulating layer 9 is less likely to occur, and an effect that a high dielectric strength can be ensured is obtained.
[0026]
According to the second invention, the rolling direction and the diagonal line of the metal rolled material in the base plate made of a substantially rectangular metal rolled material are made to coincide with each other, and first, a screw on the diagonal side perpendicular to the rolling direction is tightened. Since the screws on the diagonal side which coincides with the rolling direction are later tightened, the stress applied to the substrate can be reduced, and there is an effect that cracks can be generated and the dielectric strength can be reduced.
[Brief description of the drawings]
FIG. 1 is a plan view showing an aluminum base plate constituting an aluminum substrate in a power module according to an embodiment of the first invention.
FIG. 2 is a diagram showing a definition example of “direction” and “dimension” in the “direction” when measuring the amount of warpage of an aluminum base plate.
FIG. 3 is a diagram illustrating an example of definitions of measurement points of the amount of warpage in a long side direction and a direction orthogonal to the long side direction.
FIG. 4 is a plan view showing an aluminum base plate constituting an aluminum substrate in a power module according to an embodiment of the second invention.
FIG. 5 is a diagram showing a tightening sequence of screws for screwing the aluminum base plate 2 shown in FIG. 4 to the radiation fins.
FIG. 6 is a diagram showing an appearance of a conventional power module.
FIG. 7 is a diagram showing an appearance before filling the thermosetting resin in the power module shown in FIG. 6;
FIG. 8 is a sectional view of an aluminum substrate part in the power module shown in FIGS. 6 and 7.
FIG. 9 is an explanatory view for attaching a power module to a radiation fin.
[Explanation of symbols]
1 power module, 2 aluminum base plate, 3 case, 4 input signal terminal, 5 output electrode terminal, 6 epoxy resin, 7 IGBT chip, 8 IC, 9A insulating plate, 9B insulating plate, 10 adhesive layer, 11 thin foil type Copper pattern, 12 thick foil type copper pattern, 13 aluminum substrate, 14 radiator fin, 15 screw, 16 through hole, 17 screw hole, 18 roller rolling trace, 19 groove, 20, 21 aluminum base plate.

Claims (2)

一方の面上に半導体チップが搭載された略矩形の金属圧延材からなるベース板を底板として上記半導体チップを内包するように構成されたケース内に熱硬化樹脂が充填され、熱硬化された半導体装置において、上記ベース板は、上記金属圧延材の圧延方向が上記ベース板の短辺方向と一致することを特徴とする半導体装置。A thermosetting resin is filled in a case configured to enclose the semiconductor chip with a base plate made of a substantially rectangular metal rolled material having a semiconductor chip mounted on one surface as a bottom plate, and the thermosetting semiconductor In the apparatus, the base plate has a rolling direction of the metal rolled material coincident with a short side direction of the base plate. 一方の面上に半導体チップが搭載された略矩形の金属圧延材からなるベース板を底板として上記半導体チップを内包するように構成されたケース内に熱硬化樹脂が充填され、熱硬化された半導体装置において、上記ベース板は、上記金属圧延材の圧延方向が上記ベース板の対角線と一致することを特徴とする半導体装置。A thermosetting resin is filled in a case configured to enclose the semiconductor chip with a base plate made of a substantially rectangular metal rolled material having a semiconductor chip mounted on one surface as a bottom plate, and the thermosetting semiconductor In the apparatus, the base plate has a rolling direction of the metal rolled material coincident with a diagonal line of the base plate.
JP25058397A 1997-09-16 1997-09-16 Semiconductor device Expired - Lifetime JP3552484B2 (en)

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US20120026692A1 (en) 2010-07-28 2012-02-02 Wolverine Tube, Inc. Electronics substrate with enhanced direct bonded metal
US10531594B2 (en) 2010-07-28 2020-01-07 Wieland Microcool, Llc Method of producing a liquid cooled coldplate
US9795057B2 (en) 2010-07-28 2017-10-17 Wolverine Tube, Inc. Method of producing a liquid cooled coldplate
EP2752104B1 (en) * 2011-09-02 2022-05-04 Wieland Microcool, LLC Enhanced clad metal base plate assembly
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