JPH1187508A - Method of forming metal wiring of semiconductor device - Google Patents
Method of forming metal wiring of semiconductor deviceInfo
- Publication number
- JPH1187508A JPH1187508A JP10176056A JP17605698A JPH1187508A JP H1187508 A JPH1187508 A JP H1187508A JP 10176056 A JP10176056 A JP 10176056A JP 17605698 A JP17605698 A JP 17605698A JP H1187508 A JPH1187508 A JP H1187508A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- aluminum alloy
- pvd
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子の金属配
線形成方法に関し、特に、開口を介し下部導電層にコン
タクトされる金属層を形成する際、CVDアルミニウム
膜、低温PVDアルミニウム合金膜、高温PVDアルミニウム
合金膜が積層されるようにする金属配線形成方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a metal wiring of a semiconductor device, and more particularly to a method for forming a metal layer which is in contact with a lower conductive layer through an opening. The present invention relates to a method for forming a metal wiring in which an aluminum alloy film is laminated.
【０００２】[0002]
【従来の技術】参考に、本発明ではCVD（Chemical Vapo
r Deposition）方法で被着されたアルミニウム膜はCVD
アルミニウム膜と称し、PVD（Physical Vapor Depositi
on）方法で被着されたアルミニウム合金膜をPVDアルミ
ニウム合金膜と称する。一般に、素子間や素子と外部回
路の間を電気的に接続させるための半導体素子の配線
は、所定のコンタクトホール及びビアホールを介し下部
導電層と連結させ、配線材料で前記コンタクトホールに
埋め込まれる配線層を形成してパターニング工程を経て
形成され、特に、低い抵抗を必要とする所には金属配線
を用いる。前記金属配線はアルミニウム（A1）に少量の
シリコンや銅が含まれたり、シリコンと銅が全て含まれ
比抵抗が低いながらも加工性が優れたアルミニウム合金
膜を配線材料に利用し、前記アルミニウム合金膜はPVD
方法で被着することになる。前記PVD方法は、その過程
が化学的反応なく物理的器具、例えばスパッタリング装
置で被着がなされる。前記スパッタリング装置は、外部
印加電圧により低圧の気体をイオン化、即ちプラズマ化
させて気体イオンを形成し、前記気体イオンは電位差に
より加速されて陰極ターゲットを叩く。この時、前記気
体イオンの衝突によりターゲットの原子が飛び出して母
材表面で凝集、成長して薄膜を形成する。一般に、前記
低圧の気体はアルゴン（Ar）が用いられる。2. Description of the Related Art For reference, in the present invention, CVD (Chemical Vapor
r Deposition) aluminum film deposited by CVD
Aluminum film, PVD (Physical Vapor Depositi
The aluminum alloy film deposited by the on) method is called a PVD aluminum alloy film. Generally, a wiring of a semiconductor element for electrically connecting between elements or between an element and an external circuit is connected to a lower conductive layer through a predetermined contact hole and a via hole, and is a wiring embedded in the contact hole with a wiring material. It is formed through a patterning process after forming a layer, and a metal wiring is used particularly where a low resistance is required. The metal wiring uses an aluminum alloy film containing a small amount of silicon or copper in aluminum (A1) or an aluminum alloy film containing both silicon and copper and having low specific resistance and excellent workability as a wiring material; The membrane is PVD
Will be deposited in a manner. In the PVD method, the process is applied in a physical device such as a sputtering device without a chemical reaction. The sputtering apparatus ionizes a low-pressure gas by an externally applied voltage, that is, converts the gas into plasma to form gas ions, and the gas ions are accelerated by a potential difference and strike a cathode target. At this time, the atoms of the target fly out due to the collision of the gas ions, and aggregate and grow on the surface of the base material to form a thin film. Generally, the low-pressure gas is argon (Ar).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、前記ス
パッタリング方法はCVD方法に比べ物性、例えば膜の密
度が高く不純物濃度が少ないという利点があるが、層覆
い（stepcoverage）が悪いということと、低温でスパッ
タリング工程を行えば表面が粗くなって配線マスク作業
が容易でないという問題がある。However, the sputtering method has advantages over the CVD method in that the physical properties, for example, the film density is high and the impurity concentration is low, but the step coverage is poor and the sputtering method has a low temperature. If the sputtering step is performed, there is a problem that the surface becomes rough and the wiring mask work is not easy.
【０００４】一方、前記CVD方法は金属薄膜内に欠陥の
増加で金属薄膜の比抵抗が高くなる問題があり、デザイ
ン ルールが小さくなるに従い金属配線の抵抗値が大き
くなり、金属薄膜にエレクトロ マイグレーション（E
M）現象のような信頼性側面とRCディレイ等のような素
子特性側面に良くない影響を与える。On the other hand, the above-mentioned CVD method has a problem that the resistivity of the metal thin film increases due to the increase of defects in the metal thin film. E
M) It has a bad effect on reliability aspects such as phenomena and element characteristics aspects such as RC delay.
【０００５】従って、本発明の目的は、コンタクトホー
ルが絶縁膜にアルミニウム膜を被着する際、層覆いを増
大させアルミニウム合金膜の表面粗度を緩和させ得るよ
うにする半導体素子の金属配線形成方法を提供する。Accordingly, an object of the present invention is to provide a method for forming a metal wiring of a semiconductor device, which can increase the layer coverage and reduce the surface roughness of an aluminum alloy film when a contact hole covers an insulating film with an aluminum film. Provide a way.
【０００６】[0006]
【課題を解決するための手段】以上の目的を達成するた
め本発明は、導電層上部に絶縁膜が形成され、前記絶縁
膜に開口が備えられ、その上部に金属層が被着されて前
記開口を介し前記導電層にコンタクトされる半導体素子
製造方法において、前記開口が備えられた絶縁膜に拡散
ベリア膜を形成する段階と、前記拡散ベリア膜上部にCV
Dアルミニウム膜を形成する工程と、前記CVDアルミニウ
ム膜上部に低温でPVDアルミニウム合金膜を形成し、そ
の上部に高温でPVDアルミニウム合金膜を順次形成する
工程と、前記PVDアルミニウム合金上部に反射防止膜を
形成する工程を含む。According to the present invention, an insulating film is formed on a conductive layer, an opening is provided in the insulating film, and a metal layer is deposited on the opening. Forming a diffusion barrier film on an insulating film provided with the opening; and forming a CV on the diffusion barrier film on the insulating film provided with the opening.
A step of forming a D aluminum film, a step of forming a PVD aluminum alloy film at a low temperature on the CVD aluminum film, and a step of sequentially forming a PVD aluminum alloy film at a high temperature thereon, and an antireflection film on the PVD aluminum alloy. Is formed.
【０００７】また、前記目的達成のための本発明は、導
電層上部に絶縁膜が形成され、前記絶縁膜に開口が備え
られ、その上部に金属層が被着されて前記開口を介し前
記導電層にコンタクトされる半導体素子製造方法におい
て、前記絶縁膜に開口を形成した後、アウト ガッシン
グ（out−gassing）工程を進める工程と、開口底部にあ
る酸化膜を除去する工程と、Ti又はTa金属膜を形成する
工程と、前記金属膜上部にCVDアルミニウム膜を形成す
る工程と、前記CVDアルミニウム膜上部に低温でPVDアル
ミニウム合金膜を形成し、その上部に高温でPVDアルミ
ニウム合金膜を順次形成する工程と、前記PVDアルミニ
ウム合金上部に反射防止膜を形成する工程を含む。According to another aspect of the present invention, an insulating film is formed on a conductive layer, an opening is provided in the insulating film, and a metal layer is deposited on the opening, and the conductive layer is formed through the opening. In the method of manufacturing a semiconductor device contacted with a layer, a step of forming an opening in the insulating film and then proceeding with an out-gassing step, a step of removing an oxide film at the bottom of the opening, Forming a film, forming a CVD aluminum film on the metal film, forming a PVD aluminum alloy film at a low temperature on the CVD aluminum film, and sequentially forming a PVD aluminum alloy film on the upper portion at a high temperature. And forming an anti-reflection film on the PVD aluminum alloy.
【０００８】これらの発明によれば、コンタクトホール
を有する絶縁層上部面に金属層を被着する時、CVDアル
ミニウム膜を１次に被着して段差被覆性を向上させ、そ
の上部に低温でPVDアルミニウム合金膜を被着し、その
上部に高温でPVDアルミニウム合金膜を被着してアルミ
ニウム合金膜の表面を滑らかにし、後続工程を容易に進
行可能にすることにより金属配線の質を向上させる。According to these inventions, when a metal layer is deposited on the upper surface of the insulating layer having a contact hole, a CVD aluminum film is deposited first to improve the step coverage, and a low temperature is deposited on the upper portion. Improve the quality of metal wiring by depositing a PVD aluminum alloy film and applying a PVD aluminum alloy film on top of it at a high temperature to smooth the surface of the aluminum alloy film and allow the subsequent processes to proceed easily. .
【０００９】以上の発明にあって、前記拡散ベリア膜
は、窒化膜系統やシリコン窒化膜系統の金属膜である方
が好ましい。また、前記拡散ベリア膜を形成した後、そ
の表面にTi又はTa膜を被着する工程を含む方が好まし
い。また、前記CVDアルミニウム膜は、１００〜２５０
℃程度の温度で形成するものである方が好ましい。ま
た、前記PVDアルミニウム合金膜を形成する際、低温は
２０〜１００℃で、高温は４００〜５５０℃である方が
好ましい。また、前記低温でPVDアルミニウム合金膜の
形成は５〜２５kWパワー（power）で行い、前記高温でP
VDアルミニウム合金膜の形成は０.１〜５kWパワー（pow
er）で行う方が好ましい。また、前記低温及び高温でPV
Dアルミニウム合金膜を形成する際、一つのチャンバで
工程を進めるか、それぞれ温度条件が異なる二つのチャ
ンバで真空破壊なく進める方が好ましい。また、前記拡
散ベリア膜、Ti又はTa金属膜を形成する工程からPVDア
ルミニウム合金膜を形成する工程まで、真空破壊なく工
程を進める方が好ましい。In the above invention, it is preferable that the diffusion barrier film is a metal film of a nitride film system or a silicon nitride film system. Further, it is preferable to include a step of forming a Ti or Ta film on the surface after forming the diffusion barrier film. Further, the CVD aluminum film has a thickness of 100 to 250.
It is preferable to form at a temperature of about ° C. Further, when forming the PVD aluminum alloy film, it is preferable that the low temperature is 20 to 100 ° C and the high temperature is 400 to 550 ° C. Further, the formation of the PVD aluminum alloy film at the low temperature is performed with 5 to 25 kW power,
The VD aluminum alloy film is formed at a power of 0.1 to 5 kW (pow
er). In addition, PV at the low and high temperatures
When forming a D-aluminum alloy film, it is preferable to proceed in one chamber or proceed without vacuum break in two chambers having different temperature conditions. In addition, it is preferable to proceed from the step of forming the diffusion barrier film, the Ti or Ta metal film to the step of forming the PVD aluminum alloy film without vacuum breakage.
【００１０】[0010]
【発明の実施の形態】以下、添付の図面を参照して本発
明を詳細に説明する。図１乃至図４は、本発明の実施例
に係る半導体素子の金属配線形成方法を示した断面図で
ある。先ず、図１を参照しながら、導電層又は半導体基
板（１）上部に絶縁膜（２）を形成し、コンタクトホー
ルを形成した後、クリーニング工程又はアウト ガッシ
ング工程を経た後、拡散ベリア膜（３）を形成する。こ
の際、前記絶縁層（２）は酸化膜系統の膜であり、前記
拡散ベリア膜（３）はTi＼TIN又はW＼WN、Ti＼TiSiN積
層膜、又はTiN、WN、TaNで窒化膜系列の化合物やシリコ
ン窒化膜系統の化合物で形成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. 1 to 4 are cross-sectional views illustrating a method for forming a metal wiring of a semiconductor device according to an embodiment of the present invention. First, referring to FIG. 1, an insulating film (2) is formed on a conductive layer or a semiconductor substrate (1), a contact hole is formed, a cleaning process or an outgassing process is performed, and then a diffusion barrier film (3) is formed. ) Is formed. At this time, the insulating layer (2) is an oxide-based film, and the diffusion barrier film (3) is a Ti＼TIN or W＼WN, Ti＼TiSiN laminated film, or a TiN, WN, TaN nitride film. And a compound of the silicon nitride film type.
【００１１】図２を参照すれば、前記拡散ベリア膜
（３）上部にTi又はTa膜のような単一金属膜（４）を被
着し、その上部にCVDアルミニウム膜（５）を被着す
る。この際、前記単一金属膜は、金属ベリア膜（３）に
直接アルミニウム膜が被着される時、アルミニウム膜が
良く拡散せず、水玉模様に被着されるウェッ ティン
グ（Wetting）現象を防止し、前記金属ベリア膜（３）
とその下部からガスが放出されるアウト ガッシング（o
ut−gassing）防止膜に利用される。また、前記CVDアル
ミニウム膜（５）は、CVD方法を利用して１００〜２５
０℃程度の温度で４００〜１０００A程度の薄い厚さに
形成する。Referring to FIG. 2, a single metal film (4) such as a Ti or Ta film is deposited on the diffusion barrier film (3), and a CVD aluminum film (5) is deposited thereon. I do. At this time, when the aluminum film is directly deposited on the metal barrier film (3), the single metal film does not diffuse well and prevents a wetting phenomenon that is deposited on a polka dot pattern. And the metal veria film (3)
And outgassing (o
Ut-gassing) It is used for a prevention film. In addition, the CVD aluminum film (5) is formed in a thickness of 100 to 25 using a CVD method.
It is formed at a temperature of about 0 ° C. to a thin thickness of about 400 to 1000 A.
【００１２】図３を参照すれば、前記CVDアルミニウム
膜（５）上部に、例えば２０〜１００℃の低温でPVDア
ルミニウム合金膜（６）と４００〜５５０℃の高温でPV
Dアルミニウム合金膜（７）を順次積層する。この際、
前記高温である４００〜５５０℃温度は、コンタクトホ
ールの段差比（aspect ratio）に従い調節可能なもので
ある。前記CVDアルミニウム膜（５）と、前記低温PVDア
ルミニウム合金膜（６）及び高温PVDアルミニウム合金
膜（７）の形成工程は、真空破壊せず高真空で維持され
たスパッタリング チェンバで成り、前記低温PVDアルミ
ニウム合金膜（６）は、ウェーハの加熱なく５〜２５kW
程度の高いパワー（power）で短時間で被着し、前記高
温PVDアルミニウム合金膜（７）は、前記ウェーハを十
分加熱し高温で０.１〜５kW以下の低い被着パワーによ
りアルミニウム合金膜を被着する。そのため、アルミニ
ウム合金の表面を滑らかにすることができる。また、前
記低温PVDアルミニウム合金（６）と高温PVDアルミニウ
ム合金（７）の被着工程は、一つのチャンバで形成する
こともでき、温度が調節された二つのチャンバを利用す
ることができる。Referring to FIG. 3, for example, a PVD aluminum alloy film (6) at a low temperature of 20 to 100 ° C. and a PVD aluminum alloy film (6) at a high temperature of 400 to 550 ° C. are formed on the CVD aluminum film (5).
A D aluminum alloy film (7) is sequentially laminated. On this occasion,
The high temperature of 400 to 550 ° C. can be adjusted according to the aspect ratio of the contact hole. The step of forming the CVD aluminum film (5), the low-temperature PVD aluminum alloy film (6), and the high-temperature PVD aluminum alloy film (7) comprises a sputtering chamber maintained at a high vacuum without breaking the vacuum. Aluminum alloy film (6) is 5-25kW without heating the wafer
The high-temperature PVD aluminum alloy film (7) is deposited in a short time at a high power, and the high-temperature PVD aluminum alloy film (7) is formed by sufficiently heating the wafer and applying a low deposition power of 0.1 to 5 kW or less at a high temperature. To adhere. Therefore, the surface of the aluminum alloy can be smoothed. In addition, the deposition process of the low-temperature PVD aluminum alloy (6) and the high-temperature PVD aluminum alloy (7) can be performed in one chamber, and can use two chambers whose temperature is controlled.
【００１３】図４を参照すれば前記CVDアルミニウム膜
（５）、低温PVDアルミニウム合金（６）と高温PVDアル
ミニウム合金（７）でなるアルミニウム合金膜上部に反
射防止膜（９）を形成する。前記反射防止膜（９）はパ
ターニング工程の際、アルミニウム合金膜（８）の表面
で反射されることを極小化するためのもので、例えば窒
化膜系統の金属、又はシリコン窒化膜系統の金属が利用
される。Referring to FIG. 4, an anti-reflection film (9) is formed on the CVD aluminum film (5) and an aluminum alloy film composed of a low-temperature PVD aluminum alloy (6) and a high-temperature PVD aluminum alloy (7). The antireflection film (9) is for minimizing reflection on the surface of the aluminum alloy film (8) during the patterning step. For example, a metal of a nitride film or a metal of a silicon nitride film is used. Used.
【００１４】本発明の他の実施例は、導電層上部に絶縁
膜が形成され、前記絶縁膜に開口が備えられ、その上部
に金属層が被着されて前記開口を介し前記導電層にコン
タクトされる半導体素子を製造する際、前記絶縁膜に開
口を形成した後アウト ガッシング（out−gassing）工
程を進める工程と、開口底部に形成される酸化膜を除去
する工程と、ウェッティング（Wetting）防止又はアウ
ト ガッシング遮断用単一金属膜、例えばTi又はTa金属
膜を形成する工程と、前記金属膜上部にCVDアルミニウ
ム膜を形成する工程と、前記CVDアルミニウム膜上部に
低温でPVDアルミニウム合金膜を形成し、その上部に高
温でPVDアルミニウム合金膜を順次形成する工程と、前
記PVDアルミニウム合金上部に反射防止膜を形成する工
程を含む。前記CVDアルミニウム膜、前記PVDアルミニウ
ム合金膜を形成する工程は、前述の実施例のような条件
で行えば良い。In another embodiment of the present invention, an insulating film is formed on a conductive layer, an opening is provided in the insulating film, a metal layer is applied on the insulating film, and a contact is made with the conductive layer through the opening. When manufacturing a semiconductor device to be manufactured, a step of performing an out-gassing step after forming an opening in the insulating film, a step of removing an oxide film formed at the bottom of the opening, and a step of wetting A step of forming a single metal film for preventing or outgassing interruption, for example, a Ti or Ta metal film, a step of forming a CVD aluminum film on the metal film, and forming a PVD aluminum alloy film on the CVD aluminum film at a low temperature. Forming and sequentially forming a PVD aluminum alloy film thereon at a high temperature, and forming an anti-reflection film on the PVD aluminum alloy. The step of forming the CVD aluminum film and the PVD aluminum alloy film may be performed under the conditions as in the above-described embodiment.
【００１５】[0015]
【発明の効果】以上で説明したように、本発明に係る半
導体素子の金属配線形成方法は、コンタクトホールを有
する絶縁層上部面に金属層を被着する時、CVDアルミニ
ウム膜を１次に被着して段差被覆性を向上させ、その上
部に低温でPVDアルミニウム合金膜を被着し、その上部
に高温でPVDアルミニウム合金膜を被着してアルミニウ
ム合金膜の表面を滑らかにし、後続工程を容易に進行可
能にすることにより金属配線の質を向上させ、半導体素
子の信頼性を向上させることができる効果がある。As described above, in the method for forming a metal wiring of a semiconductor device according to the present invention, when a metal layer is deposited on an upper surface of an insulating layer having a contact hole, a CVD aluminum film is firstly deposited. To improve the step coverage, apply a PVD aluminum alloy film on the upper part at a low temperature, and apply a PVD aluminum alloy film on the upper part at a high temperature to smooth the surface of the aluminum alloy film. There is an effect that the quality of the metal wiring can be improved by making it easy to proceed, and the reliability of the semiconductor element can be improved.
【図１】図１は、開口が形成された絶縁膜の表面に拡散
ベリア膜を形成した断面図である。FIG. 1 is a cross-sectional view in which a diffusion barrier film is formed on a surface of an insulating film in which an opening is formed.
【図２】図２は、前記拡散ベリア膜上部にTi又はTa等の
単一金属層を被着したものを示した断面図である。FIG. 2 is a cross-sectional view showing a structure in which a single metal layer such as Ti or Ta is applied on the diffusion barrier film.
【図３】図３は、CVDアルミニウム膜を被着し、低温と
高温でPVDアルミニウム合金膜をそれぞれ積層した断面
図である。FIG. 3 is a cross-sectional view in which a CVD aluminum film is applied, and a PVD aluminum alloy film is laminated at a low temperature and a high temperature, respectively.
【図４】図４は、反射防止膜を被着したものを示した断
面図である。FIG. 4 is a cross-sectional view showing an anti-reflection coating.
１ 半導体基板 ２ 絶縁膜 ３ 拡散ベリア膜 ４ 単一金属層 ５ CVDアルミニウム膜 ６ PVDアルミニウム合金膜 ７ PVDアルミニウム合金膜 ９ 反射防止膜 Reference Signs List 1 semiconductor substrate 2 insulating film 3 diffusion barrier film 4 single metal layer 5 CVD aluminum film 6 PVD aluminum alloy film 7 PVD aluminum alloy film 9 anti-reflection film
Claims (9)
縁膜に開口が備えられ、その上部に金属層が被着されて
前記開口を介し前記導電層にコンタクトされる半導体素
子製造方法において、 前記開口が備えられた絶縁膜上部に拡散ベリア膜を形成
する工程と、 前記拡散ベリア膜上部にCVDアルミニウム膜を形成する
工程と、 前記CVDアルニミウム膜上部に低温でPVDアルミニウム合
金膜を形成し、その上部に高温でPVDアルミニウム合金
膜を順次形成する工程と、 前記PVDアルミニウム合金上部に反射防止膜を形成する
工程を含む半導体素子の金属配線形成方法。1. A method of manufacturing a semiconductor device, wherein an insulating film is formed on a conductive layer, an opening is provided in the insulating film, a metal layer is applied on the insulating film, and the conductive layer is contacted through the opening. Forming a diffusion barrier film over the insulating film provided with the opening; forming a CVD aluminum film over the diffusion barrier film; forming a PVD aluminum alloy film at a low temperature over the CVD aluminum film. Forming a PVD aluminum alloy film on the upper surface of the PVD aluminum alloy film, and forming an antireflection film on the PVD aluminum alloy film.
コン窒化膜系統の金属膜であることを特徴とする請求項
１記載の半導体素子の金属配線形成方法。2. The method according to claim 1, wherein the diffusion barrier film is a metal film of a nitride film system or a silicon nitride film system.
面にTi又はTa膜を被着する工程を含むことを特徴とする
請求項１又は請求項２記載の半導体素子の金属配線形成
方法。3. The method according to claim 1, further comprising, after forming the diffusion barrier film, applying a Ti or Ta film to the surface of the diffusion barrier film.
縁膜に開口が備えられ、その上部に金属層が被着されて
前記開口を介し前記導電層にコンタクトされる半導体素
子製造方法において、 前記絶縁膜に開口を形成した後、アウト ガッシング（o
ut−gassing）工程を進める工程と、 開口底部に形成される酸化膜を除去する工程と、 Ti又はTa金属膜を形成する工程と、 前記金属膜上部にCVDアルミニウム膜を形成する工程
と、 前記CVDアルミニウム膜上部に低温でPVDアルミニウム合
金膜を形成し、その上部に高温でPVDアルミニウム合金
膜を順次形成する工程と、 前記PVDアルミニウム合金上部に反射防止膜を形成する
工程を含む半導体素子の金属配線形成方法。4. A method for manufacturing a semiconductor device, wherein an insulating film is formed on a conductive layer, an opening is provided in the insulating film, a metal layer is applied on the insulating film, and the conductive layer is contacted through the opening. After forming an opening in the insulating film, out gassing (o
ut-gassing), removing an oxide film formed at the bottom of the opening, forming a Ti or Ta metal film, forming a CVD aluminum film on the metal film, Forming a PVD aluminum alloy film on the CVD aluminum film at a low temperature, forming a PVD aluminum alloy film on the CVD aluminum film sequentially at a high temperature, and forming an anti-reflection film on the PVD aluminum alloy. Wiring formation method.
５０℃程度の温度で形成することを特徴とする請求項１
又は請求項４記載の半導体素子の金属配線形成方法。5. The method according to claim 1, wherein the CVD aluminum film has a thickness of 100 to 2
2. The method according to claim 1, wherein the film is formed at a temperature of about 50.degree.
5. The method according to claim 4, wherein the metal wiring is formed on a semiconductor element.
際、低温は２０〜１００℃であり、高温は４００〜５５
０℃であることを特徴とする請求項１又は請求項４記載
の半導体素子の金属配線形成方法。6. When forming the PVD aluminum alloy film, the low temperature is 20 to 100 ° C. and the high temperature is 400 to 55 ° C.
The method according to claim 1, wherein the temperature is 0 ° C. 5.
成は５〜２５kWパワー（power）で行い、前記高温でPVD
アルミニウム合金膜の形成は０.1〜５kWパワー（powe
r）で行うことを特徴とする請求項１、請求項４又は請
求項６記載の半導体素子の金属配線形成方法。7. The method for forming a PVD aluminum alloy film at a low temperature at a power of 5 to 25 kW,
The formation of aluminum alloy film requires 0.1-5kW power (powe
7. The method according to claim 1, wherein the method is performed in r).
金膜を形成する際、一つのチャンバで工程を進めるか、
それぞれ温度条件が異なる二つのチャンバでそれぞれ真
空破壊なく進めることを特徴とする請求項１、請求項
４、請求項６又は請求項７記載の半導体素子の金属配線
形成方法。8. When forming the PVD aluminum alloy film at a low temperature and a high temperature, the process is performed in one chamber,
8. The method according to claim 1, wherein the process proceeds without vacuum break in two chambers having different temperature conditions.
成する工程からPVDアルミニウム合金膜を形成する工程
まで、真空破壊なく工程を進めることを特徴とする請求
項１又は請求項４記載の半導体素子の金属配線形成方
法。9. The method according to claim 1, wherein the steps from forming the diffusion barrier film, Ti or Ta metal film to forming a PVD aluminum alloy film are performed without vacuum break. A method for forming a metal wiring of a semiconductor element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970030281A KR100268788B1 (en) | 1997-06-30 | 1997-06-30 | Metal wiring formation method of semiconductor device |
| KR1997P-30281 | 1997-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1187508A true JPH1187508A (en) | 1999-03-30 |
| JP3288010B2 JP3288010B2 (en) | 2002-06-04 |
Family
ID=19513017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17605698A Expired - Fee Related JP3288010B2 (en) | 1997-06-30 | 1998-06-23 | Method for forming metal wiring of semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3288010B2 (en) |
| KR (1) | KR100268788B1 (en) |
| TW (1) | TW387136B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002522A (en) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | Method for forming a metal line |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100399417B1 (en) * | 2001-01-08 | 2003-09-26 | 삼성전자주식회사 | A method for preparing of integrated circuit of semiconductor |
| TWI512860B (en) * | 2013-06-17 | 2015-12-11 | China Steel Corp | Wire structure and fabrication method thereof |
-
1997
- 1997-06-30 KR KR1019970030281A patent/KR100268788B1/en not_active IP Right Cessation
-
1998
- 1998-06-19 TW TW087109821A patent/TW387136B/en not_active IP Right Cessation
- 1998-06-23 JP JP17605698A patent/JP3288010B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002522A (en) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | Method for forming a metal line |
Also Published As
| Publication number | Publication date |
|---|---|
| TW387136B (en) | 2000-04-11 |
| JP3288010B2 (en) | 2002-06-04 |
| KR19990006059A (en) | 1999-01-25 |
| KR100268788B1 (en) | 2000-11-01 |
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