TWI512860B - Wire structure and fabrication method thereof - Google Patents
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Description
本發明是有關於一種導線結構及其製造方法，且特別是有關於一種在鋁及鋁合金構成之導線結構及其製造方法。The present invention relates to a wire structure and a method of manufacturing the same, and more particularly to a wire structure constructed of aluminum and aluminum alloy and a method of manufacturing the same.
薄膜電晶體液晶顯示器是利用矩陣排列的導線、薄膜電晶體及電容等元件驅動液晶，再藉由背光模組及彩色濾光片產生色彩豐富的圖形及影像。導線材料一般選用鋁，其因鋁的成本低、容易蝕刻、電阻率低，因此最常被選用為導線材料。The thin film transistor liquid crystal display uses a matrix of wires, a thin film transistor and a capacitor to drive the liquid crystal, and then uses the backlight module and the color filter to generate color graphics and images. The wire material is generally selected from aluminum, which is most commonly used as a wire material because of its low cost, easy etching, and low electrical resistivity.
然而，鋁材質的導線在攝氏120度環境下容易因應力釋放而形成突起(hillock)，此突起容易刺破絕緣層而與另一層金屬導線接觸，因而造成短路使得產品良率降低，並且在鋁導線的厚度越高的情況，突起的情況越明顯。However, the aluminum wire is liable to form a hillock due to stress release in an environment of 120 degrees Celsius, and the protrusion easily pierces the insulating layer to contact another metal wire, thereby causing a short circuit to lower the product yield, and in the aluminum. The higher the thickness of the wire, the more pronounced the protrusion.
因此，遂有銅導線的製程出現，以解決鋁導線中發生的突起問題，但是銅具有表面極易氧化、不易蝕刻、與玻璃基板附著性差以及易與矽反應而生成矽合金的問題 外，尤其在蝕刻方面，其需以硫酸及雙氧水製備蝕刻液，使得業者需增加生產成本以避免硫酸及雙氧水混合時所產生易爆炸的問題。Therefore, the process of bismuth copper wire appears to solve the problem of protrusion occurring in the aluminum wire, but the copper has a problem that the surface is easily oxidized, is not easily etched, has poor adhesion to the glass substrate, and is easily reacted with ruthenium to form a ruthenium alloy. In addition, especially in etching, it is necessary to prepare an etching solution with sulfuric acid and hydrogen peroxide, so that the manufacturer needs to increase the production cost to avoid the problem of explosiveness generated when sulfuric acid and hydrogen peroxide are mixed.
有鑑於此，亟須提供一種導線結構及其製造方法，以改善習知鋁導線之導線結構及其製造方法的缺陷。In view of the above, it is not necessary to provide a wire structure and a method of manufacturing the same to improve the defects of the wire structure of the conventional aluminum wire and the method of manufacturing the same.
鑒於以上的問題，本發明之一方面在於提供一種導線結構及其製造方法，藉以減少習知以鋁導線的導線結構及其製造方法所產生的突起的問題。In view of the above problems, an aspect of the present invention provides a wire structure and a method of manufacturing the same, which can reduce the problem of the protrusions which are conventionally produced by the wire structure of the aluminum wire and the manufacturing method thereof.
根據本發明之一實施例，此導線結構包含基板、第一鋁層以及第一鋁合金層。第一鋁層設置在基板上，並且第一鋁合金層設置於第一鋁層上，第一鋁合金層包含合金添加物，合金添加物為鈦、矽或銅之一或其任意組合。According to an embodiment of the invention, the wire structure comprises a substrate, a first aluminum layer, and a first aluminum alloy layer. The first aluminum layer is disposed on the substrate, and the first aluminum alloy layer is disposed on the first aluminum layer, the first aluminum alloy layer includes an alloy addition, and the alloy additive is one of titanium, tantalum or copper or any combination thereof.
依據本發明之另一實施例，上述之合金添加物的重量百分比為0.1%至3%。According to another embodiment of the invention, the alloy additive is present in an amount of from 0.1% to 3% by weight.
依據本發明之再一實施例，上述之第一鋁合金層之厚度為50奈米(nm)至550奈米，而鋁層之厚度為50奈米至550奈米。According to still another embodiment of the present invention, the first aluminum alloy layer has a thickness of 50 nanometers (nm) to 550 nanometers, and the aluminum layer has a thickness of 50 nanometers to 550 nanometers.
依據本發明之又一實施例，更包含至少一複合金屬層，設置於第一鋁合金層上，其中複合金屬層包含：第二鋁層以及第二鋁合金層。第二鋁層設置於第一鋁合金層上，第二鋁合金層設置於第二鋁層上。According to still another embodiment of the present invention, the method further includes at least one composite metal layer disposed on the first aluminum alloy layer, wherein the composite metal layer comprises: a second aluminum layer and a second aluminum alloy layer. The second aluminum layer is disposed on the first aluminum alloy layer, and the second aluminum alloy layer is disposed on the second aluminum layer.
依據本發明之另一實施例，更包含介面附著層，設 置於第一鋁層和基板間，其中介面附著層之材質為鉬或鈦。According to another embodiment of the present invention, an interface adhesion layer is further included. The material is interposed between the first aluminum layer and the substrate, wherein the interface adhesion layer is made of molybdenum or titanium.
根據本發明之另一態樣，提供一種導線結構之製造方法。在一實施例中，首先提供基板，接著形成第一鋁層在基板上。在形成第一鋁層後，形成第一鋁合金層於第一鋁層上，其中第一鋁合金層包含合金添加物，合金添加物為鈦、矽或銅之一或其任意組合。According to another aspect of the present invention, a method of fabricating a wire structure is provided. In one embodiment, a substrate is first provided, followed by forming a first aluminum layer on the substrate. After forming the first aluminum layer, a first aluminum alloy layer is formed on the first aluminum layer, wherein the first aluminum alloy layer comprises an alloy addition, and the alloy addition is one of titanium, tantalum or copper or any combination thereof.
依據本發明之另一實施例，上述之合金添加物的重量百分比為0.1%至3%。According to another embodiment of the invention, the alloy additive is present in an amount of from 0.1% to 3% by weight.
依據本發明之再一實施例，上述之第一鋁層係以物理氣相沉積法(Physical vapor deposition；PVD)來形成於基板上。According to still another embodiment of the present invention, the first aluminum layer is formed on the substrate by physical vapor deposition (PVD).
依據本發明之又一實施例，上述之第一鋁合金層係以物理氣相沉積法來形成於基板上。According to still another embodiment of the present invention, the first aluminum alloy layer is formed on the substrate by physical vapor deposition.
依據本發明之另一實施例，更包含形成介面附著層於第一鋁層和基板間，其中介面附著層之材質為鉬或鈦。According to another embodiment of the present invention, the method further comprises forming an interface adhesion layer between the first aluminum layer and the substrate, wherein the interface adhesion layer is made of molybdenum or titanium.
因此，本發明之優點之一是在提供一種導線結構及其製造方法，其係利用在第一鋁層上設置第一鋁金屬層，藉以避免短路狀況的產生。另外，在第一鋁合金層上可再設置至少一複合金屬層，可進一步改善短路狀況的產生。Accordingly, one of the advantages of the present invention is to provide a wire structure and a method of fabricating the same that utilizes a first aluminum metal layer on a first aluminum layer to avoid short circuit conditions. In addition, at least one composite metal layer may be further disposed on the first aluminum alloy layer to further improve the occurrence of a short circuit condition.
有關本發明的特徵、實作與功效，茲配合圖式作最佳實施例詳細說明如下。The features, implementations, and utilities of the present invention are described in detail below with reference to the drawings.
100‧‧‧導線結構100‧‧‧Wire structure
110、210‧‧‧基板110, 210‧‧‧ substrate
120、121、122、220‧‧‧鋁層120, 121, 122, 220‧‧‧ aluminum layer
130、131、132、133‧‧‧鋁合金層130, 131, 132, 133‧‧‧ aluminum alloy layer
140‧‧‧介面附著層140‧‧‧Interface adhesion layer
300‧‧‧導線結構製造方法300‧‧‧Wire structure manufacturing method
310、320、330‧‧‧製造步驟310, 320, 330‧‧‧ Manufacturing steps
第1圖係繪示依照本發明第一實施例之導線結構之剖面圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing the structure of a wire in accordance with a first embodiment of the present invention.
第2圖係繪示依照本發明第二實施例之導線結構之剖面圖。Figure 2 is a cross-sectional view showing the structure of a wire in accordance with a second embodiment of the present invention.
第3圖係繪示依照習知之導線結構之剖面圖。Figure 3 is a cross-sectional view showing a conventional wire structure.
第4圖係繪示依照本發明實驗組1之導線結構之剖面圖。Figure 4 is a cross-sectional view showing the structure of the wire of the experimental group 1 according to the present invention.
第5圖係繪示依照本發明實驗組2之導線結構之剖面圖。Figure 5 is a cross-sectional view showing the structure of the wire of the experimental group 2 in accordance with the present invention.
第6圖係繪示依照本發明實驗組3之導線結構之剖面圖。Figure 6 is a cross-sectional view showing the structure of the wire of the experimental group 3 in accordance with the present invention.
第7圖係繪示依照本發明實驗組4之導線結構之剖面圖。Figure 7 is a cross-sectional view showing the structure of the wire of the experimental group 4 in accordance with the present invention.
第8圖係繪示本發明之導線結構之製造方法之步驟圖。Fig. 8 is a view showing the steps of a method of manufacturing the wire structure of the present invention.
以下仔細討論本發明實施例之製造和使用。然而，可以理解的是，實施例提供許多可應用的發明概念，其可實施於各式各樣的特定內容中。所討論之特定實施例僅供說明，並非用以限定本發明之範圍。The making and using of the embodiments of the invention are discussed in detail below. However, it will be appreciated that the embodiments provide many applicable inventive concepts that can be implemented in a wide variety of specific content. The specific embodiments discussed are illustrative only and are not intended to limit the scope of the invention.
請參照第1圖，第1圖係繪示依照本發明第一實施例之導線結構之剖面圖。導線結構100包含基板110、鋁層120以及鋁合金層130。鋁層120是設置在基板110上，且鋁合金層130設置在鋁層120上，其中鋁合金層130包含合金添加物，合金添加物為鈦、矽或銅之一或其任意組合，其中合金添加物的重量百分比可為0.1%至3%，以避免過多的增加導線結構100電阻值。較佳地，鋁合金層130之厚度可為50奈米至550奈米，鋁層120之厚度可為50奈米至550奈米。Please refer to FIG. 1. FIG. 1 is a cross-sectional view showing the structure of a wire according to a first embodiment of the present invention. The wire structure 100 includes a substrate 110, an aluminum layer 120, and an aluminum alloy layer 130. The aluminum layer 120 is disposed on the substrate 110, and the aluminum alloy layer 130 is disposed on the aluminum layer 120, wherein the aluminum alloy layer 130 comprises an alloy additive, and the alloy additive is one of titanium, tantalum or copper or any combination thereof, wherein the alloy The weight percentage of the additive may range from 0.1% to 3% to avoid excessively increasing the resistance of the wire structure 100. Preferably, the aluminum alloy layer 130 may have a thickness of 50 nm to 550 nm, and the aluminum layer 120 may have a thickness of 50 nm to 550 nm.
除此之外，在鋁層120與基板110間可設置有介 面附著層140，介面附著層140之材質為鉬或鈦。介面附著層140提供了鋁層120與基板110間具有較佳的附著效果。在本實施例中，基板110之材質為玻璃，而介面附著層140在玻璃上具有較佳的附著效果，如此可使本實施例之導線結構100可容易附著在基板110上，進而達到強化導線結構100之目的。In addition, a dielectric layer may be disposed between the aluminum layer 120 and the substrate 110. The surface adhesion layer 140 and the interface adhesion layer 140 are made of molybdenum or titanium. The interface adhesion layer 140 provides a better adhesion between the aluminum layer 120 and the substrate 110. In this embodiment, the material of the substrate 110 is glass, and the interface adhesion layer 140 has a better adhesion effect on the glass, so that the wire structure 100 of the embodiment can be easily attached to the substrate 110, thereby achieving the reinforcing wire. The purpose of structure 100.
請參閱第2圖，第2圖係繪示依照本發明第二實施例之導線結構之剖面圖。本實施例之導線結構更可包含至少一複合金屬層，設置於鋁合金層130上，複合金屬層包含鋁層121以及鋁合金層131。其中鋁層121設置於鋁合金層130上，鋁合金層131設置於鋁層121上。換言之，在基板110上依序的堆疊設置了鋁層120、鋁合金層130、鋁層121以及鋁合金層131，藉以平坦化突起來避免短路情況發生。特別提到的是，在鋁合金層131上可再設置另一或多個複合金屬層的情況時，可使短路情況進一步改善。Please refer to FIG. 2, which is a cross-sectional view showing the structure of a wire according to a second embodiment of the present invention. The wire structure of this embodiment may further comprise at least one composite metal layer disposed on the aluminum alloy layer 130, and the composite metal layer comprises an aluminum layer 121 and an aluminum alloy layer 131. The aluminum layer 121 is disposed on the aluminum alloy layer 130, and the aluminum alloy layer 131 is disposed on the aluminum layer 121. In other words, the aluminum layer 120, the aluminum alloy layer 130, the aluminum layer 121, and the aluminum alloy layer 131 are sequentially stacked on the substrate 110, thereby flattening the protrusions to prevent a short circuit from occurring. It is particularly mentioned that in the case where another or a plurality of composite metal layers can be further provided on the aluminum alloy layer 131, the short circuit condition can be further improved.
為使 貴審能更進一步了解本發明之導線結構可減少突起產生之效果，請參閱後述的比較例以及各個實施例。In order to further understand the wire structure of the present invention, the effect of the protrusion generation can be reduced, and the comparative examples and the respective embodiments described later are referred to.
請參閱第3圖，第3圖係繪示依照習知之導線結構之剖面圖。以500瓦的濺鍍功率、0.002托的濺鍍壓力，在基板210上沉積厚度為500奈米的鋁層220，接著在攝氏360度、氮氣環境下進行20分鐘的熱處理後，以掃描式電子顯微鏡觀察突起的分佈狀況，並且利用雷射共焦顯微鏡 量測突起高度。經測量後之結果，對照組之面電阻值為0.043歐姆/平方(Ω/□)，且突起佈滿鋁層220的表面，其中突起最大高度為2.33微米。Please refer to FIG. 3, which is a cross-sectional view showing a conventional wire structure. An aluminum layer 220 having a thickness of 500 nm was deposited on the substrate 210 at a sputtering power of 500 watts and a sputtering pressure of 0.002 Torr, followed by a heat treatment at 360 degrees Celsius and a nitrogen atmosphere for 20 minutes, followed by scanning electrons. Observing the distribution of the protrusions with a microscope and using a laser confocal microscope Measure the height of the protrusion. As a result of the measurement, the surface resistance of the control group was 0.043 ohm/square (Ω/□), and the protrusions were covered with the surface of the aluminum layer 220, wherein the maximum height of the protrusions was 2.33 μm.
請參閱第4圖，第4圖係繪示依照本發明實驗組1之導線結構之剖面圖。以500瓦的濺鍍功率、0.002托的濺鍍壓力，在基板110上依序沉積厚度分別為250奈米的鋁層120以及250奈米的鋁合金層130，其中，鋁合金層130之材質係鋁鈦合金，且鈦的重量百分比為1%，接著在攝氏360度、氮氣環境下進行20分鐘的熱處理後，以掃描式電子顯微鏡觀察突起的分佈狀況，並且利用雷射共焦顯微鏡量測突起高度。經測量後之結果，實驗組1之面電阻值為0.042歐姆/平方，突起的數量較對照組少，突起最大高度為1.47微米。由此可知，鋁合金層130確可使得鋁層120之突起變得較為平坦，且減少突起數量。Please refer to FIG. 4, which is a cross-sectional view showing the structure of the lead of the experimental group 1 according to the present invention. An aluminum layer 120 having a thickness of 250 nm and an aluminum alloy layer 130 having a thickness of 250 nm are sequentially deposited on the substrate 110 at a sputtering power of 500 watts and a sputtering pressure of 0.002 Torr, wherein the material of the aluminum alloy layer 130 is It is an aluminum-titanium alloy, and the weight percentage of titanium is 1%. Then, after heat treatment at 360 degrees Celsius and nitrogen atmosphere for 20 minutes, the distribution of the protrusions is observed by a scanning electron microscope and measured by a laser confocal microscope. The height of the protrusion. After the measurement, the surface resistance of the experimental group 1 was 0.042 ohm/square, the number of protrusions was less than that of the control group, and the maximum height of the protrusion was 1.47 micrometers. It can be seen from this that the aluminum alloy layer 130 can make the protrusion of the aluminum layer 120 relatively flat and reduce the number of protrusions.
請參閱第5圖，第5圖係繪示依照本發明實驗組2之導線結構之剖面圖。以500瓦的濺鍍功率、0.002托的濺鍍壓力，在基板110上依序沉積厚度分別為250奈米的鋁合金層130以及250奈米的鋁層120，其中，鋁合金層130之材質係鋁鈦合金，且鈦的重量百分比為0.5%，接著在攝氏360度、氮氣環境下進行20分鐘的熱處理後，以掃描式電子顯微鏡觀察突起的分佈狀況，並且利用雷射共焦顯微鏡量測突起高度。經測量後之結果，實驗組2之面電 阻值為0.045歐姆/平方，突起的數量較對照組少，突起最大高度為0.46微米。由此可知，鋁合金層130確可使得鋁層120之突起變得較為平坦，且減少突起數量。Please refer to FIG. 5. FIG. 5 is a cross-sectional view showing the structure of the wire of the experimental group 2 according to the present invention. An aluminum alloy layer 130 having a thickness of 250 nm and a 250 nm aluminum layer 120 are sequentially deposited on the substrate 110 at a sputtering power of 500 watts and a sputtering pressure of 0.002 Torr. The material of the aluminum alloy layer 130 is formed. Aluminum-titanium alloy with a weight percentage of titanium of 0.5%, followed by heat treatment at 360 ° C for 30 minutes in a nitrogen atmosphere, and the distribution of the protrusions was observed by a scanning electron microscope and measured by a laser confocal microscope. The height of the protrusion. After the measurement, the surface of the experimental group 2 The resistance was 0.045 ohms/square, the number of protrusions was less than that of the control group, and the maximum height of the protrusions was 0.46 micrometers. It can be seen from this that the aluminum alloy layer 130 can make the protrusion of the aluminum layer 120 relatively flat and reduce the number of protrusions.
請參閱第6圖，第6圖係繪示依照本發明實驗組3之導線結構之剖面圖。以500瓦的濺鍍功率、0.002托的濺鍍壓力，在基板110上依序沉積厚度均為100奈米的鋁層120、鋁合金層130、鋁層121、鋁合金層131以及鋁層122，其中，鋁合金層130、131之材質係鋁矽銅合金，且矽與銅的重量百分比為1%與0.5%，接著在攝氏360度、氮氣環境下進行20分鐘的熱處理後，以掃描式電子顯微鏡觀察突起的分佈狀況，並且利用雷射共焦顯微鏡量測突起高度。經測量後之結果，實驗組3之面電阻值為0.032歐姆/平方，突起的數量較對照組少，突起最大高度為0.52微米。由此可知，鋁合金層130、131確可使得鋁層120、121、122之突起變得較為平坦，且減少突起數量。Please refer to FIG. 6. FIG. 6 is a cross-sectional view showing the structure of the lead of the experimental group 3 according to the present invention. An aluminum layer 120, an aluminum alloy layer 130, an aluminum layer 121, an aluminum alloy layer 131, and an aluminum layer 122 each having a thickness of 100 nm are sequentially deposited on the substrate 110 at a sputtering power of 500 watts and a sputtering pressure of 0.002 Torr. Wherein, the material of the aluminum alloy layers 130 and 131 is an aluminum beryllium copper alloy, and the weight percentage of niobium and copper is 1% and 0.5%, followed by heat treatment for 20 minutes at 360 degrees Celsius and nitrogen atmosphere, and then scanning. The distribution of the protrusions was observed with an electron microscope, and the height of the protrusions was measured using a laser confocal microscope. After the measurement, the surface resistance of the experimental group 3 was 0.032 ohm/square, the number of protrusions was less than that of the control group, and the maximum height of the protrusion was 0.52 μm. From this, it can be seen that the aluminum alloy layers 130, 131 can make the protrusions of the aluminum layers 120, 121, 122 relatively flat and reduce the number of protrusions.
請參閱第7圖，第7圖係繪示依照本發明實驗組4之導線結構之剖面圖。以500瓦的濺鍍功率、0.002托的濺鍍壓力，在基板110上依序沉積厚度均為100奈米的鋁合金層130、鋁層120、鋁合金層131、鋁層121、鋁合金層132、鋁層122以及鋁合金層133，其中，鋁合金層130、131、132、133之材質係鋁銅合金，且銅的重量百分比為0.5%，接著在攝氏360度、氮氣環境下進行20分鐘的熱處 理後，以掃描式電子顯微鏡觀察突起的分佈狀況，並且利用雷射共焦顯微鏡量測突起高度。經測量後之結果，實驗組4之面電阻值為0.034歐姆/平方，突起的數量較對照組少，突起最大高度為0.35微米。由此可知，鋁合金層130、131、132、133確可使得鋁層120、121、122之突起變得較為平坦，且減少突起數量。Please refer to FIG. 7. FIG. 7 is a cross-sectional view showing the structure of the wire of the experimental group 4 according to the present invention. The aluminum alloy layer 130, the aluminum layer 120, the aluminum alloy layer 131, the aluminum layer 121, and the aluminum alloy layer each having a thickness of 100 nm are sequentially deposited on the substrate 110 at a sputtering power of 500 watts and a sputtering pressure of 0.002 Torr. 132. The aluminum layer 122 and the aluminum alloy layer 133, wherein the aluminum alloy layers 130, 131, 132, and 133 are made of aluminum-copper alloy, and the weight percentage of copper is 0.5%, and then is performed at 360 degrees Celsius and under a nitrogen atmosphere. Minutes of heat After that, the distribution of the protrusions was observed with a scanning electron microscope, and the height of the protrusions was measured using a laser confocal microscope. After the measurement, the surface resistance of the experimental group 4 was 0.034 ohm/square, the number of protrusions was less than that of the control group, and the maximum height of the protrusion was 0.35 μm. It can be seen that the aluminum alloy layers 130, 131, 132, and 133 can make the protrusions of the aluminum layers 120, 121, 122 relatively flat and reduce the number of protrusions.
根據前述對照組以及實驗組1至4的比較結果可知，本發明之導線結構的面電阻值與習知的導線結構相近，甚至有較低的趨勢，因此若是將本發明之導線結構運用在薄膜電晶體液晶顯示器上時，仍可具有接近於或甚至快於以習知的導線結構運用在薄膜電晶體液晶顯示器上時傳遞訊號之效果，因此不會產生畫面延遲的問題。According to the comparison results of the foregoing control group and the experimental groups 1 to 4, the surface resistance value of the wire structure of the present invention is similar to that of the conventional wire structure, and even has a low tendency, so if the wire structure of the present invention is applied to the film On a transistor liquid crystal display, the effect of transmitting a signal when applied to a thin film transistor liquid crystal display with a conventional wire structure can still be obtained, or even faster, so that no picture delay occurs.
另外，針對於對照組以及實驗組1至4的突起的測量結果而言，實驗組1至4的突起高度以及突起的數量明顯低於對照組。另外，若是具有較多的複合金屬層，也就是有較多的鋁層及鋁合金層堆疊結構時，突起的最大高度也會有減少的趨勢。In addition, with respect to the measurement results of the control group and the protrusions of the experimental groups 1 to 4, the protrusion heights and the number of protrusions of the experimental groups 1 to 4 were significantly lower than those of the control group. In addition, if there are many composite metal layers, that is, there are many aluminum layer and aluminum alloy layer stack structures, the maximum height of the protrusions will also decrease.
請一併參閱第1及8圖，第8圖係繪示本發明之導線結構之製造方法之步驟圖。本發明之導線結構製造方法300中，首先步驟310是提供基板110。接著，步驟320是形成鋁層120於基板110上，較佳地，鋁層120是以物理氣相沉積法(Physical vapor deposition；PVD)來形成於基板110上，如真空蒸鍍法、濺鍍法或離子佈植法。在形成鋁層120後，步驟330是形成鋁合金層130於鋁層120上， 其中鋁合金層包含合金添加物，其為鈦、矽或銅之一或其任意組合，合金添加物的重量百分比可較佳為0.1%至3%。另外，鋁合金層130可利用物理氣相沉積法來形成於鋁層120上，如真空蒸鍍法、濺鍍法或離子佈植法。另外，特別提到的是，在鋁層120與基板110之間也可以形成介面附著層140，其材質為鉬或鈦，藉以使鋁層120與基板110之間具有較佳的附著效果。Please refer to FIGS. 1 and 8 together. FIG. 8 is a view showing the steps of the manufacturing method of the wire structure of the present invention. In the method of manufacturing a wire structure 300 of the present invention, first step 310 is to provide a substrate 110. Next, in step 320, an aluminum layer 120 is formed on the substrate 110. Preferably, the aluminum layer 120 is formed on the substrate 110 by physical vapor deposition (PVD), such as vacuum evaporation or sputtering. Method or ion implantation. After the aluminum layer 120 is formed, step 330 is to form an aluminum alloy layer 130 on the aluminum layer 120. Wherein the aluminum alloy layer comprises an alloy additive which is one of titanium, tantalum or copper or any combination thereof, and the weight percentage of the alloy additive may preferably be from 0.1% to 3%. In addition, the aluminum alloy layer 130 may be formed on the aluminum layer 120 by physical vapor deposition, such as vacuum evaporation, sputtering, or ion implantation. In addition, it is particularly mentioned that an interface adhesion layer 140 may be formed between the aluminum layer 120 and the substrate 110, and the material thereof is molybdenum or titanium, so that the aluminum layer 120 and the substrate 110 have a better adhesion effect.
綜合以上所述，在本發明之導線結構及其製造方法中，主要是在基板上堆疊至少一鋁層以及至少一鋁合金層，以減少鋁層及鋁合金層所含有的鋁因後續高溫製程而使其應力釋放所形成的突起，其中鋁合金層中的合金添加物佔鋁合金層中的重量百分比僅為0.1%至3%，因此也不會增加過多的材料成本。另外，本發明之導線結構及其製造方法無需改變現有太多的製程，僅需在形成鋁層之後再形成鋁合金層，或是再於鋁合金層上形成一或多個複合金屬層，即可具有平坦化突起並減少突起數量的效果，因此不需要太多的成本花費。由此可見，本發明之導線結構及其製造方法，不僅不用更改過多的現有製程，還可具有減少鋁突起的效果，在生產效率上佔極大優勢。In summary, in the wire structure and the manufacturing method thereof of the present invention, at least one aluminum layer and at least one aluminum alloy layer are mainly stacked on the substrate to reduce the aluminum contained in the aluminum layer and the aluminum alloy layer due to the subsequent high temperature process. The stress is released to form the protrusions, wherein the alloy additive in the aluminum alloy layer accounts for only 0.1% to 3% by weight of the aluminum alloy layer, and thus does not increase excessive material cost. In addition, the wire structure of the present invention and the manufacturing method thereof do not need to change too many existing processes, and only need to form an aluminum alloy layer after forming an aluminum layer, or form one or more composite metal layers on the aluminum alloy layer, that is, It is possible to have the effect of flattening the protrusions and reducing the number of protrusions, and thus does not require much cost. It can be seen that the wire structure and the manufacturing method thereof of the present invention not only do not need to change too many existing processes, but also have the effect of reducing aluminum protrusions, and have a great advantage in production efficiency.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，在本發明所屬技術領域中任何具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。The present invention has been disclosed in the above embodiments, and is not intended to limit the present invention. Any one of ordinary skill in the art to which the present invention pertains can make various changes without departing from the spirit and scope of the invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims.
100‧‧‧導線結構100‧‧‧Wire structure
110‧‧‧基板110‧‧‧Substrate
120‧‧‧鋁層120‧‧‧Aluminum layer
130‧‧‧鋁合金層130‧‧‧Aluminum alloy layer
140‧‧‧介面附著層140‧‧‧Interface adhesion layer
Claims (9)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW387136B (en) * | 1997-06-30 | 2000-04-11 | Hyundai Electronics Ind | Method of forming a metal wire of a semiconductor device |
| TW200622457A (en) * | 2004-12-29 | 2006-07-01 | Au Optronics Corp | Copper gate electrode of liquid crystal display device and method of fabricating the same |
| TW200847437A (en) * | 2007-05-30 | 2008-12-01 | Au Optronics Corp | Conductor structure, pixel structure, and methods of forming the same |
| CN101740157A (en) * | 2008-11-20 | 2010-06-16 | 上海中天铝线有限公司 | Aluminium-alloy conductor and manufacture method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW387136B (en) * | 1997-06-30 | 2000-04-11 | Hyundai Electronics Ind | Method of forming a metal wire of a semiconductor device |
| TW200622457A (en) * | 2004-12-29 | 2006-07-01 | Au Optronics Corp | Copper gate electrode of liquid crystal display device and method of fabricating the same |
| TW200847437A (en) * | 2007-05-30 | 2008-12-01 | Au Optronics Corp | Conductor structure, pixel structure, and methods of forming the same |
| CN101740157A (en) * | 2008-11-20 | 2010-06-16 | 上海中天铝线有限公司 | Aluminium-alloy conductor and manufacture method thereof |
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