JPH118171A - Beam drift correction method of electron beam exposure system and manufacture of semiconductor integrated circuit device using the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a beam drift correction method through with an electron beam exposure system is capable of accurately making a beam drift correction and a manufacturing method of a semiconductor integrated circuit device using such method. SOLUTION: An electron beam is corrected constantly on drift through the control section of an electron beam exposure system using an estimated beam drift A during a drawing time from start to completion of drawing. The estimated beam drift A is calculated from a measurement result obtained by measuring a beam drift which occurs when the same drawing pattern is drawn by the use of the same alignment method on a wafer formed through the same manufacturing process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for correcting a beam drift in an electron beam exposure (drawing) apparatus and a method for manufacturing a semiconductor integrated circuit device using the same, and more particularly to a method for correcting a beam drift with high accuracy. The present invention relates to a beam drift correction method for an electron beam exposure apparatus and a method for manufacturing a semiconductor integrated circuit device using the same.

[0002]

2. Description of the Related Art The present inventor has studied an electron beam exposure apparatus used in a method of manufacturing a semiconductor integrated circuit device. The following is a technique studied by the present inventors, and the outline is as follows.

That is, in an exposure method of an electron beam exposure apparatus used in a method of manufacturing a semiconductor integrated circuit device, a beam drift correction method uses a reference target (formed on a wafer made of a semiconductor substrate or the like) before drawing starts. The target position is measured, the coordinates of the target are detected periodically during writing, and the difference from the reference value is used as the beam drift amount, and the beam drift amount is corrected.

Documents describing an electron beam exposure apparatus (electron beam lithography apparatus) include, for example, "Electronic Materials December 1988, Separate Volume", published on December 13, 1988 by the Industrial Research Institute, pages 84 to 89. Some are described in

[0005]

However, according to the above-described beam drift correction method, the target is periodically detected and the beam drift amount is corrected.
There is a problem that the beam drift between the correction and the next correction cannot be corrected.

Therefore, in order to perform high-precision correction, it is necessary to shorten the correction cycle, so that the number of corrections increases, so that the exposure time increases and the throughput decreases. I do.

An object of the present invention is to provide a beam drift correction method for an electron beam exposure apparatus capable of performing highly accurate beam drift correction, and a method for manufacturing a semiconductor integrated circuit device using the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0009]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the beam drift correction method for an electron beam exposure apparatus according to the present invention, the beam drift during the writing from the start to the end of writing is constantly corrected by the control unit of the apparatus by using the predicted beam drift amount. The calculation of the predicted beam drift amount is based on the calculation of the beam drift amount when the same drawing pattern is drawn on the wafer to be actually drawn using the same alignment method on the wafer created by the same manufacturing process. It is intended to use the result.

Further, according to a method of manufacturing a semiconductor integrated circuit device of the present invention, a pattern of a semiconductor integrated circuit device is formed by using a lithography technique and a selective etching technique using the above-described beam drift correction method of an electron beam exposure apparatus. Manufacturing process.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

(Embodiment 1) FIG. 1 is a graph for explaining a beam drift correction method of an electron beam exposure apparatus according to Embodiment 1 of the present invention.

In FIG. 1, a line A indicates a predicted beam drift amount. In this case, the beam drift amount of the beam (electron beam) is in the X direction and the Y direction, but the predicted beam drift amount A is in the X direction, and the illustration in the Y direction is omitted. As a result of the study by the present inventors, the maximum value of the predicted beam drift amount A is generally 20
Although it was about nm, it is clear that the beam drift amount of the electron beam exposure apparatus may be about 20 to 50 nm in special cases.

In FIG. 1, the horizontal axis is the drawing time, which indicates the time from the start of drawing to the end of drawing.
The vertical axis is the amount of beam drift.

In the present embodiment, the calculation of the predicted beam drift amount A is performed on a wafer (for example, a semiconductor substrate for manufacturing a semiconductor integrated circuit device) in which the same drawing pattern is formed in the same manufacturing process on a wafer on which writing is actually performed. The result of the amount of beam drift when writing is performed on the same wafer using the same alignment method is used.

In this case, as another mode of calculating the predicted beam drift amount A of the present embodiment, when a plurality of wafers are successively drawn in lot units, the drawing processes of all wafers in the lot are equivalent. Since it can be considered that there is, the result of the beam drift amount of the first wafer is used.

In another embodiment for calculating the predicted beam drift amount A according to the present embodiment, the same drawing pattern is applied to a wafer to be actually drawn, and the same By using the result of the amount of beam drift when drawing using the alignment method and statistically processing the result of the amount of beam drift corresponding to each wafer, the amount of beam drift that can be determined to be the most accurate is calculated. I have.

The beam drift correction method of the electron beam exposure apparatus according to the present embodiment uses the predicted beam drift amount A shown in FIG. 1 to correct the beam drift during writing from the start of writing to the end of writing. This is always performed by the control unit.

Therefore, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, correction of the beam drift at the time of writing from the start of writing to the end of writing is performed by using the predicted beam drift amount A. Since the control is always performed by the control unit, the beam drift can always be corrected with high accuracy and writing can be performed, so that a highly accurate writing pattern can be formed.

Further, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, the correction of the beam drift at the time of writing from the start of writing to the end of writing is performed by using the predicted beam drift amount A. Since it is always performed by the control unit, the coordinates of a target (a target formed on a wafer made of a semiconductor substrate or the like) are periodically detected during writing in the conventional beam drift correction method, and the difference from a reference value is detected. Is used as the beam drift amount, and the operation of correcting the beam drift amount (conventionally, about 10 correction times) can be omitted, so that the drawing (exposure) time can be reduced and the throughput can be improved.

(Embodiment 2) FIG. 2 is a graph for explaining a beam drift correction method of an electron beam exposure apparatus according to Embodiment 2 of the present invention.

The beam drift correction method of the electron beam exposure apparatus according to the present embodiment uses the predicted beam drift amount A used in the above-described beam drift correction method according to the first embodiment, from the start of writing to the end of writing. In this method, the correction operation is performed twice to adjust the beam drift amount.

In this case, the correction of the beam drift from the start of writing (time T ₀ ) to the first correction operation (time T ₁ ) is performed by using the predicted beam drift amount A (A ₁ in FIG. 2). The correction is always performed by the control unit.
In FIG. 2, a line B indicates the actual beam drift amount of the beam. Further, the line A and the line B have a large discrete distance, but for the sake of clarity in the drawing, the large discrete distance is used, and in fact, it is an extremely small discrete distance.

Next, by the first correction operation (time T ₁ ), the coordinates of a reference target (a target formed on a wafer made of a semiconductor substrate or the like) are detected.
The difference between the reference value and the beam drift amount, adds a beam drift amount A ₂ calculated from the beam drift amount to the predicted beam drift amount A (A _1). Then, using the predicted beam drift amount A ₃ beam drift amount A ₂ is added to the predicted beam drift amount A, until the first correction operation (time T ₁₎ from the second correction operation (time T ₂₎ Is constantly corrected by the control unit of the apparatus.

Next, the coordinates of the reference target are detected by the _second correction operation (time T ₂ ), and the difference from the reference value is set as the beam drift amount, and the beam drift amount A calculated from the beam drift amount is calculated. ₄ is added to the predicted beam drift amount A (A ₃ ). And the beam drift amount A
_The apparatus controls the correction of the beam drift from the _second correction operation (time T ₂ ) to the end of the drawing (T ₃ ) by using the predicted beam drift amount A ₅ added to the predicted beam drift amount A _5. The correction is always performed by the unit.

As another aspect of the electron beam exposure apparatus of the present embodiment, the above-described two correction operations can be performed three or four times as necessary.

Therefore, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, a plurality of correction operations can be performed in comparison with the above-described beam drift correction method of the electron beam exposure apparatus of the first embodiment. Then, the actual beam drift amount of the beam is added to the predicted beam drift amount A, and the more accurate predicted beam drift amounts A _{1 to} A
_{As 5} , the beam drift at the time of writing from the start of writing to the end of writing is constantly performed by the control unit of the apparatus by using the predicted beam drift amounts A _{1 to} A ₅ , so that the beam drift is always maintained. Correct with high precision,
Since drawing can be performed, a highly accurate drawing pattern can be formed.

(Embodiment 3) FIG. 3 is a graph for explaining a beam drift correction method of an electron beam exposure apparatus according to Embodiment 3 of the present invention.

In the beam drift correction method of the electron beam exposure apparatus according to the present embodiment, correction is performed twice from the start of writing to the end of writing, and the predicted beam drift is calculated using the result of the previous correction operation. The amount is calculated, and the beam drift at the time of writing is constantly corrected by the control unit of the apparatus using the predicted beam drift amount.

In this case, the beam drift is not corrected from the start of writing (time T ₀ ) to the first correction operation (time T ₁ ). That is, the predicted beam drift amount A ₁ of the beam drift amount is not employed (0 value. In FIG. 3, line B shows the beam drift amount of the actual beam.

Next, by the first correction operation (time T ₁ ), the coordinates of the reference target are detected, the difference from the reference value is set as the beam drift amount, and the beam drift amount A calculated from the beam drift amount is calculated. ₂ is added to the predicted beam drift amount a _1. Then, a predicted beam in which the beam drift amount A ₂ is added to the beam drift amount corresponding to a straight line passing through the position at the top of the beam drift amount A ₂ and the position where the beam drift amount at the writing start T ₀ is 0 use drift amount a _3, a first correction operation correction of beam drift from (time T ₁₎ until the second correction operation (time T _2), have a full-time correction by the control unit of the device.

Next, by the second correction operation (time T ₂ ), the coordinates of the reference target are detected, the difference from the reference value is set as the beam drift amount, and the beam drift amount A calculated from the beam drift amount is calculated. ₄ is added to the predicted beam drift amount A ₃ . Then, the beam drift amount uppermost position and the first correction operation A ₄ (time T ₁₎ beam drift amount to the beam drift amount A ₄ corresponding to the straight line passing through the position of the top of the beam drift amount of using predictive beam drift amount a ₅ to the added, correction of beam drift from the second correction operation (time T ₂₎ until the end drawing (time T _3), a full-time correction by the control unit of the device I have.

As another mode for calculating the predicted beam drift amounts A ₃ and A _{5 according} to the present embodiment, the wafers to be actually drawn are formed with the same drawing pattern and the same manufacturing process. Above, using the result of the beam drift amount when writing using the same alignment method, and statistically processing the result of the beam drift amount corresponding to each wafer, the beam drift amount that can be determined to be the most accurate Can be used.

As another mode of the electron beam exposure apparatus of the present embodiment, the above-described two correction operations can be performed three or four times as necessary.

Therefore, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, the predicted beam drift amount A is obtained by the _first correction operation (time T ₁ ).
₃ is calculated, and the beam drift correction from the _first correction operation (time T ₁ ) to the second correction operation (time T ₂ ) is performed by using the predicted beam drift amount A _3. Correction is always performed. Further, by the second correction operation (time T _2), to calculate the predicted beam drift amount A _5, and uses the predicted beam drift amount A _5, writing end from the second correction operation (time T ₂₎ ( The correction of the beam drift until time T ₃ ) is constantly performed by the control unit of the apparatus.

As a result, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, the predicted beam drift amounts A ₃ and A ₅ are used to perform the drawing from the first correction operation to the end of the drawing. Since the correction of the beam drift is always performed by the control unit of the apparatus, the beam drift from the first correction operation can be corrected and drawn with high accuracy, so that a highly accurate drawing pattern can be formed.

Further, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, the predicted beam drift amount is calculated using a plurality of correction operations. The beam drift amount can be predicted when the beam drift amount cannot be predicted or when the beam drift amount of the beam for each wafer is not reproducible.

Further, according to the beam drift correction method of the electron beam exposure apparatus of the present embodiment, the method can be applied to the case where the beam drift amount of the beam is variously changed according to the writing time. A simple drawing pattern can be formed.

(Embodiment 4) FIGS. 4 to 9 are schematic cross-sectional views showing manufacturing steps of a semiconductor integrated circuit device according to Embodiment 4 of the present invention. The method for manufacturing the semiconductor integrated circuit device according to the present embodiment will be specifically described with reference to FIG.

First, as shown in FIG. 4, a silicon oxide film is formed on a device isolation region which is a selective region on the surface of a semiconductor substrate (wafer) 1 made of, for example, p-type silicon single crystal by using thermal oxidation. A field insulating film 2 is formed. Next, a gate insulating film 3 made of, for example, silicon oxide is formed on the semiconductor substrate 1.
After forming a conductive polycrystalline silicon film (conductive film serving as the gate electrode 4) on the substrate, forming an insulating film 5 made of, for example, a silicon oxide film, using a lithography technique and a selective etching technique, The polycrystalline silicon film is patterned to form the gate electrode 4 and the patterned gate insulating film 3 is formed.

Thereafter, a sidewall spacer 6 made of, for example, silicon oxide is formed on the side wall of the gate electrode 4. Thereafter, an n-type impurity such as phosphorus is ion-implanted into the semiconductor substrate 1 to form an n-type semiconductor region 7 serving as a source and a drain.

In this case, the gate electrode 4 on the field insulating film 2 is used as a wiring layer.
In the above-described manufacturing process of the semiconductor integrated circuit device, an n-channel MOSFET is formed as a semiconductor element on the semiconductor substrate 1.
P-channel MOSFET other than SFET, CMOSFE
An embodiment in which various semiconductor elements such as T, a bipolar transistor, and a capacitor are formed can be employed.

Next, for example, a silicon oxide film is deposited on the semiconductor substrate 1 by using a CVD (Chemical Vapor Deposition) method, and an insulating film 8 made of the silicon oxide film or the like is formed. Poli
The surface of the insulating film 8 is flattened by polishing the insulating film 8 using a shing (chemical mechanical polishing) method, thereby forming the insulating film 8 having a flat surface. Next, a resist film 9 is formed on the surface of the insulating film 8 (FIG. 5).

Thereafter, the resist film 9 is irradiated with an electron beam using the beam drift correction method of the electron beam exposure apparatus according to the first embodiment to form a pattern 9a for forming a through hole (connection hole). To form

In this case, since the beam drift correction is performed by using the beam drift correction method of the electron beam exposure apparatus of the first embodiment, a highly accurate pattern 9a can be formed. . In addition, a mode in which the beam drift correction method of the electron beam exposure apparatus according to the second or third embodiment described above can be applied. Even in this case, since the beam drift correction is performed, high-precision The pattern 9a can be formed.

Next, by using a lithography technique including a developing process and a baking process, a process of removing a region of the pattern 9a drawn by an electron beam is performed.
The resist film 9 is used as an etching mask for forming a through hole. Thereafter, through holes 10 as contact holes are formed in the insulating film 8 by using a selective etching technique such as dry etching using the resist film 9 as an etching mask (FIG. 6).

Thereafter, after removing the unnecessary resist film 9, a tungsten film is formed on the semiconductor substrate 1 by using the CVD method, and then the tungsten film is formed by using the CMP method or the like.
The tungsten film other than the through hole 10 is removed by polishing, and the plug 11 made of the tungsten film embedded in the through hole 10 is formed.

Next, after a wiring layer 12 made of, for example, an aluminum layer is deposited on the semiconductor substrate 1, a resist film 13 is formed thereon.

Thereafter, the resist film 13 is irradiated with an electron beam using the beam drift correction method of the electron beam exposure apparatus of the first embodiment to form a pattern 13a for forming a wiring layer pattern.

In this case, since the beam drift correction is performed by using the beam drift correction method of the electron beam exposure apparatus of the first embodiment, a highly accurate pattern 13a can be formed. . Also,
The above-described beam drift correction method of the electron beam exposure apparatus according to the second or third embodiment can be applied. Even in this case, since the beam drift correction is performed, a highly accurate pattern 13a can be obtained. Can be formed (FIG. 7).

Next, using a lithography technique including a developing process and a baking process, a process for removing a region of the pattern 13a drawn by an electron beam is performed to form an etching mask for forming a wiring layer pattern. Of the resist film 13. Thereafter, using the resist film 13 as an etching mask, a patterned wiring layer 12 is formed by a selective etching technique such as dry etching (FIG. 8).

After removing the unnecessary resist film 13, an insulating film 14 as an interlayer insulating film is formed on the semiconductor substrate 1, and a through hole 15 is formed therein. Embedded plug 16
Is formed, and then a wiring layer (second wiring layer) 17 is formed (FIG. 9). In this case, the manufacturing process is performed using the same manufacturing process as the manufacturing process of the wiring layer (first wiring layer) 12 from the manufacturing process of the insulating film 8 described above.

Next, according to the design specifications, the aforementioned manufacturing steps (the insulating film 14 as an interlayer insulating film, the through-hole 1
5, the plug 16, the wiring layer 17 as the second wiring layer, and the wiring layer 17 are repeatedly formed to form a multilayer wiring layer, thereby completing the manufacturing process of the semiconductor integrated circuit device according to the present embodiment.

According to the above-described semiconductor integrated circuit device of the present embodiment, the first or second embodiment described above is used.
Alternatively, the resist film 9 is irradiated with an electron beam using the beam drift correction method of the electron beam exposure apparatus according to the third embodiment to form a pattern 9a for forming a through hole.
Is formed, beam drift correction is performed, so that a highly accurate pattern 9a can be formed. Therefore, the through hole 10 is formed in the insulating film 8 by using the selective etching technique using the resist film 9 having a highly accurate pattern as an etching mask. Through hole 10 having high alignment accuracy with semiconductor region 7 can be formed.

Further, according to the semiconductor integrated circuit device of the present embodiment, the beam drift correction method of the electron beam exposure apparatus of the above-described first, second, or third embodiment can be used. By irradiating the resist film 13 with an electron beam to form the pattern 13a for forming the wiring layer pattern, beam drift correction is performed, so that a highly accurate pattern 13a can be formed. . Therefore, since the patterned wiring layer 12 is formed by using the resist film 13 having a highly accurate pattern as an etching mask and by using a selective etching technique, the underlayer having the highly accurate pattern is formed. The wiring layer 12 having high alignment accuracy with the plug 11 can be formed.

Therefore, according to the above-described semiconductor integrated circuit device of the present embodiment, the through hole 1 having a high-accuracy pattern and a high alignment accuracy with the underlying layer is provided.
By forming the zero and the wiring layer 12, it is possible to manufacture a multi-layer wiring layer having high performance and high reliability by fine processing with high manufacturing yield.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the invention. However, the invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, in a method of manufacturing a semiconductor integrated circuit device using the beam drift correction method of the electron beam exposure apparatus of the present invention, a pattern of a gate electrode is formed in addition to a step of manufacturing a through hole and a step of manufacturing a wiring layer. The present invention can be applied to a manufacturing process for forming various patterns such as a manufacturing process.

Further, the method of manufacturing a semiconductor integrated circuit device using the beam drift correction method of the electron beam exposure apparatus according to the present invention is directed to a semiconductor substrate or SOI (Silicon on Insulat
or) Use a wafer such as a substrate, and use MOSF
The present invention can be applied to a method of manufacturing a semiconductor integrated circuit device having a semiconductor element in which various semiconductor elements such as an ET, a CMOSFET, a bipolar transistor, or a BiMOS or a BiCMOS structure in which a MOSFET and a bipolar transistor are combined are combined.

Further, the method of manufacturing a semiconductor integrated circuit device using the beam drift correction method of the electron beam exposure apparatus according to the present invention includes a logic system including a MOSFET, a CMOSFET, or the like, or a DRAM (Dynamic Random Access Memory).
ccess Memory), SRAM (Static Random Access Mem)
ory) can be applied to various methods for manufacturing a semiconductor integrated circuit device having a memory system or the like.

[0062]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the beam drift correction method of the electron beam exposure apparatus of the present invention, the beam drift correction at the time of writing from the start of writing to the end of writing is always performed by the control unit of the apparatus using the predicted beam drift amount. Thereby, beam drift can always be corrected with high accuracy and writing can be performed, so that a highly accurate writing pattern can be formed.

Further, according to the beam drift correction method of the electron beam exposure apparatus of the present invention, the correction of the beam drift at the time of writing from the start of writing to the end of writing is performed by the control unit of the apparatus using the predicted beam drift amount. Since it is always performed, the coordinates of a target (a target formed on a wafer composed of a semiconductor substrate, etc.) are periodically detected during writing by the conventional beam drift correction method, and the difference from a reference value is detected. Since the operation of correcting the beam drift amount (conventionally, the number of corrections is about 10 times) can be omitted, the drawing (exposure) time can be reduced and the throughput can be improved.

(2). According to the beam drift correction method of the electron beam exposure apparatus of the present invention, the correction operation is performed a plurality of times to predict the actual beam drift amount of the beam as compared with the above-described beam drift correction method of the electron beam exposure apparatus. In addition to the beam drift amount, the predicted beam drift amount is used as a more accurate predicted beam drift amount, and the beam drift at the time of writing from the start of writing to the end of writing is constantly corrected by the control unit of the apparatus. With this, the beam drift can always be corrected with high accuracy and writing can be performed, so that a highly accurate writing pattern can be formed.

(3). According to the beam drift correction method of the electron beam exposure apparatus of the present invention, the predicted beam drift amount is calculated by the first correction operation, and the predicted beam drift amount is used to perform the second correction operation from the first correction operation. The correction of the beam drift until the correction operation is constantly performed by the control unit of the apparatus. In addition, the predicted beam drift amount is calculated by the second correction operation, and the beam drift correction from the second correction operation to the end of the drawing is constantly corrected by the control unit of the apparatus using the predicted beam drift amount. It is carried out.

As a result, according to the beam drift correction method of the electron beam exposure apparatus of the present invention, the apparatus corrects the beam drift during writing from the first correction operation to the end of writing by using the predicted beam drift amount. Since the control is always performed by the control unit, the beam drift from the first correction operation can be corrected with high accuracy and drawing can be performed.
A highly accurate drawing pattern can be formed.

(4). According to the method of manufacturing a semiconductor integrated circuit device of the present invention, a pattern for forming through holes is formed by irradiating an electron beam to a resist film using the beam drift correction method of the electron beam exposure apparatus described above. Since the beam drift correction is performed, a highly accurate pattern can be formed.
Therefore, using a resist film having a highly accurate pattern as an etching mask and using a selective etching technique to form a through hole in the insulating film,
It is possible to form a through hole having a high-precision pattern and having high alignment accuracy with a semiconductor region as a base layer.

(5). According to the method for manufacturing a semiconductor integrated circuit device of the present invention, a pattern for forming a wiring layer pattern is formed by irradiating a resist film with an electron beam using the beam drift correction method of the electron beam exposure apparatus described above. Since the beam drift correction is performed, a highly accurate pattern can be formed. Therefore, since a patterned wiring layer is formed using a selective etching technique using a resist film having a highly accurate pattern as an etching mask, it has a highly accurate pattern and serves as an underlayer. A wiring layer having high alignment accuracy with the plug can be formed.

(6). According to the method for manufacturing a semiconductor integrated circuit device of the present invention, it is possible to form a through-hole and a wiring layer having a high-accuracy pattern and a high alignment accuracy with an underlayer, thereby achieving high performance with fine processing and A highly reliable multilayer wiring layer can be manufactured with a high manufacturing yield.

[Brief description of the drawings]

FIG. 1 is a graph for explaining a beam drift correction method of an electron beam exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a graph for explaining a beam drift correction method of an electron beam exposure apparatus according to a second embodiment of the present invention.

FIG. 3 is a graph for explaining a beam drift correction method of an electron beam exposure apparatus according to a third embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a manufacturing step of a semiconductor integrated circuit device according to a fourth embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the fourth embodiment of the present invention.

FIG. 6 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the fourth embodiment of the present invention;

FIG. 7 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the fourth embodiment of the present invention;

FIG. 8 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the fourth embodiment of the present invention.

FIG. 9 is a schematic sectional view showing a manufacturing step of the semiconductor integrated circuit device according to the fourth embodiment of the present invention;

[Explanation of symbols]

Reference Signs List 1 semiconductor substrate (wafer) 2 field insulating film 3 gate insulating film 4 gate electrode 5 insulating film 6 sidewall spacer 7 semiconductor region 8 insulating film 9 resist film 9a pattern 10 through hole 11 plug 12 wiring layer 13 resist film 13a pattern 14 insulating Film 15 Through hole 16 Plug 17 Wiring layer A Predicted beam drift amount A _{1 to} A ₅ Predicted beam drift amount B Actual beam drift amount T ₀ Writing start time T ₁ Time of _first correction operation T ₂ Second time correction operation of time T ₃ drawing end of time

Claims (9)

[Claims] 1. A beam drift correction method for an electron beam exposure apparatus, wherein a correction of a beam drift during writing from the start of writing to the end of writing is always performed by a control unit of the apparatus, using the predicted beam drift amount. . 2. The beam drift correction method for an electron beam exposure apparatus according to claim 1, wherein the calculation of the predicted beam drift amount includes creating the same writing pattern on the wafer to be actually written by the same manufacturing process. On the wafer
A beam drift correction method for an electron beam exposure apparatus, wherein a result of a beam drift amount when writing is performed using the same alignment method is used. 3. The beam drift correction method for an electron beam exposure apparatus according to claim 1, wherein the calculation of the predicted beam drift amount is performed when a plurality of wafers are continuously drawn in lot units. A beam drift correction method for an electron beam exposure apparatus, wherein a result of a beam drift amount of a wafer is used. 4. The beam drift correcting method for an electron beam exposure apparatus according to claim 1, wherein the calculation of the predicted beam drift amount is performed on a wafer to be actually written using the same writing pattern and the same manufacturing process. By using the result of the beam drift amount when drawing using the same alignment method on each created wafer, and statistically processing the result of the beam drift amount corresponding to each wafer, the most accurate A beam drift correction method for an electron beam exposure apparatus, wherein a beam drift amount that can be determined is calculated. 5. A method for correcting a beam drift of an electron beam exposure apparatus according to claim 2, wherein
A beam drift correction operation is performed a plurality of times during a writing time from the start of writing to the end of writing, and a new predicted beam drift amount obtained by adding the beam drift amount obtained by the correction operation to the predicted beam drift amount. A beam drift correction method for an electron beam exposure apparatus. 6. The beam drift correction method for an electron beam exposure apparatus according to claim 1, wherein the predicted beam drift amount is obtained by performing a beam drift correction operation a plurality of times during a writing time from the start of writing to the end of writing. A beam drift correction method for an electron beam exposure apparatus, wherein a beam drift amount obtained by each of the correction operations is used. 7. A lithography technique and a selective etching technique using the beam drift correction method of the electron beam exposure apparatus according to claim 1,
A method of manufacturing a semiconductor integrated circuit device, comprising a manufacturing step of forming a pattern of the semiconductor integrated circuit device. 8. The method for manufacturing a semiconductor integrated circuit device according to claim 7, wherein the pattern is a pattern of a through hole formed in an insulating film. 9. The method for manufacturing a semiconductor integrated circuit device according to claim 7, wherein said pattern is a wiring layer pattern.