JPH1174400A - Bga type semiconductor device and manufacture therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a BGA(ball grid array) type semiconductor device and the manufacture for performing miniaturization and thinning, lowering a cost and improving productivity without using an intermediate substrate at the time of external connection. SOLUTION: An integrated circuit part and an electrode bump 3 are formed on the surface of a semiconductor element 1, and a land 10 for installing a solder ball 8 as an external input/output terminal and a wiring pad 9 electrically connected to the land 10 are provided on the back surface. The electrode bump 3 and the wiring pad 9 are connected by a TAB tape 4 at the side face position of the semiconductor element 1. By installing the solder ball 8 on the land 10, attaching a resin frame 7 and performing resin sealing including the upper surface of the semiconductor element 1 and the TAB tape 4, this BGA type semiconductor device is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a BGA type (ball / ball type).
(Grid / array type) semiconductor device and method of manufacturing the same
The present invention relates to a semiconductor device and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, such a BGA type semiconductor device has a flat structure and is mounted on a printed wiring board or the like. However, when mounting on this substrate, it is mounted using an intermediate multilayer wiring board. I have. For example, a semiconductor device provided with such a ball terminal is as described in JP-A-8-23050.

FIGS. 5A and 5B are a cross-sectional view of a BGA type semiconductor device and an enlarged cross-sectional view of a part thereof for explaining an example of the related art. First, as shown in FIG. 5A, the conventional BGA type semiconductor device includes a multilayer wiring board 12 provided with a plurality of ball terminals 8 on the bottom surface, and a semiconductor element 1 mounted on the multilayer wiring board 12. , Semiconductor element 1
And TA for electrically connecting the multilayer wiring board 12
And a B tape 4a, and is formed by molding a part of the upper surface of the semiconductor element 1 and the TAB tape 4a with the sealing resin 6.

As shown in FIG. 5A, the TAB tape 4a has an inner lead 15 and an outer lead 16 attached on a polyimide film 14,
The inner leads 15 are joined to the electrode bumps 3 of the semiconductor element 1, and the outer leads 16 are joined to the wiring pads 9 formed on the surface of the multilayer wiring board 12 via the joints 11. Further, the ball terminals 8 are formed on ball forming lands 10 formed on the bottom surface of the multilayer wiring board 12. Further, the multilayer wiring board 12 includes wiring patterns 13 of each layer and via holes 17 for connecting them, and connects the wiring pads 9 and the ball forming lands 10 to each other.

[0005]

The above-mentioned conventional BGA
When mounting on a printed wiring board, the type semiconductor device requires a dedicated multilayer wiring board depending on the shape of each device or the number of pins, etc., and ball terminals that serve as external input / output terminals and semiconductors via the dedicated board. The element is electrically connected. Therefore, the conventional BGA type semiconductor device has a disadvantage that a different multilayer wiring board must be prepared for each product.

SUMMARY OF THE INVENTION An object of the present invention is to provide a BGA type semiconductor device which can be reduced in size, thickness, cost, and productivity without using such an intermediate substrate, and a method of manufacturing the same. is there.

[0007]

According to the BGA type semiconductor device of the present invention, an integrated circuit portion is formed at the center of the front surface, an electrode bump is provided around the integrated circuit portion, and a wiring pattern and a wiring pad are formed on the back surface. A formed semiconductor element;
A TAB tape provided on a side surface of the semiconductor element for connecting the electrode bump and the wiring pad;
And a ball terminal for external connection connected to the wiring pattern.

The TAB tape in the BGA type semiconductor device can be formed in a U-shape on all side surfaces of the semiconductor element.

Further, the BGA type semiconductor device of the present invention has a semiconductor element in which an integrated circuit portion is formed in the center of the front surface, an electrode bump is provided around the integrated circuit portion, and a wiring pattern and a wiring pad are formed on the back surface. A TAB tape provided on a side surface of the semiconductor element for connecting the electrode bump and the wiring pad; a ball terminal for external connection connected to the wiring pattern; A resin sealing resin for sealing a peripheral portion of a back surface of the semiconductor element;

[0010] The resin-sealed resin is housed in a resin frame having an opening except for the front surface of the semiconductor element and fixed to the back surface of the semiconductor element.

Further, according to the method of manufacturing a BGA type semiconductor device of the present invention, the inner bumps and the outer leads of the TAB tape are provided in which the electrode bumps formed on the front surface of the semiconductor element and the wiring pads formed on the back surface are provided on the side surface of the semiconductor element. Bonding a lead to the lead using a bonder, attaching a resin frame near the center of the inside of the wiring pad formed on the back surface of the semiconductor element, and fixing the resin frame by baking; It comprises a step of potting and injecting a liquid epoxy-based sealing resin into a space formed by the element and curing the same, and a step of forming a ball terminal on a land on the back surface of the semiconductor element.

In forming a ball terminal on a land on the back surface of the semiconductor element, the ball terminal is placed on the land via a flux and then passed through a reflow furnace to melt the surface. A circular shape can be formed on the land by using tension.

[0013]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a perspective view of a main part of a BGA type semiconductor device excluding a resin part for explaining an embodiment of the present invention. As shown in FIG. 1, in this embodiment, a semiconductor element 1 having a square shape forms an integrated circuit section 2 in the center of the upper surface (front surface), and the periphery of the integrated circuit section 2, that is, the element. The electrode bumps 3 are provided along the outer periphery of the reference numeral 1. The semiconductor element 1 has a lower surface (rear surface)
A wiring pattern and a wiring pad connected to the wiring pattern and a land for ball connection are formed. In addition,
The wiring pads on the back surface of the semiconductor element 1 also correspond to the electrode bumps 3 and are formed along the outer periphery of the element 1. A TAB tape 4 formed in a U-shape is provided on the four side surfaces of the semiconductor element 1, and the electrode bumps 3 on the front surface and the wiring pads on the back surface are connected. further,
After sealing with the resin including the semiconductor element 1, ball terminals for external connection connected to the above-mentioned wiring pattern are formed on the back surface. Thereby, electrical conduction between both surfaces of the semiconductor element 1 can be obtained without using an intermediate wiring board. Here, the resin portion is omitted, and will be described with reference to FIGS. 2 and 3 below.

In the above-described structure of the TAB tape 4, a plurality of copper foils serving as inner leads and outer leads corresponding to the electrode bumps 3 are bonded to a sheet-like polyimide resin via an epoxy resin.

FIG. 2 is a sectional view taken along the line AA in a state where a resin portion is added to the semiconductor device in FIG. 1, and FIG. 3 is an enlarged sectional view of a part of the semiconductor device in FIG. FIG.
As shown in FIG. 3 and FIG.
In the type semiconductor device, the above-described integrated circuit portion is formed in the center of the front surface, the electrode bumps 3 are provided around the integrated circuit portion, and the wiring pattern 5 and the wiring pad 9 connected to the wiring pattern 5 are formed on the back surface. Semiconductor element 1 formed
In order to connect the electrode bumps 2 and the wiring pads 9 of the semiconductor element 1, a TAB tape 4 provided on four side surfaces of the semiconductor element 1 is connected to a ball connection for external connection connected to the wiring pattern 5. The resin frame 7 is opened at a portion excluding the surface of the semiconductor element 1 and the mounting land 10 and the ball terminal 8, and is fixed to the back surface thereof by the joint 11.
And a resin sealing resin 6 filled in a resin frame 7 to seal the peripheral portion of the front surface of the semiconductor element 1, the TAB tape 4 and the back surface of the semiconductor element 1.

The electrode bumps 3, the wiring patterns 5 and the wiring pads 9 in the semiconductor device 1 are each formed of aluminum (Al), and the ball contact lands 10 are formed on Al by Cr-Cu-Au or Ti. −
It is formed by applying a barrier metal such as Cu-Ni.

On the other hand, as the TAB tape 4 for connecting the electrode bumps 3 and the wiring pads 9, a tape obtained by attaching a copper foil on a polyimide resin with an epoxy-based adhesive is used. And the other is an outer lead joined to the wiring pad 9.

Further, for the purpose of protecting the semiconductor element 1 and the TAB tape 4, the back surface of the semiconductor element 1 on which the wiring pad 9 is formed is bonded with an epoxy-based material by a bonding portion 11 made of a polyimide-based double-sided tape or the like. The formed resin frame 7 is joined. Therefore, by injecting and curing the epoxy-based sealing resin 6 into the space between the semiconductor element 1 and the resin frame 7, the integrated circuit portion of the semiconductor element 1 is hermetically sealed.

After the resin sealing, the ball terminal 8 is placed on the ball contact land 9 of the semiconductor element 1 so that the semiconductor element 1 can be electrically connected to the outside via the ball terminal 8. Can be.

As described above, according to the present embodiment,
The electrode bumps 3 arranged on the integrated circuit forming surface of the semiconductor element 1 and the wiring pads 9 formed on the back surface thereof are connected with the TAB tape 4 so that the electrode bumps 3 and the wiring pads 9 are electrically connected. . Moreover, the wiring pads 9 are electrically connected to the ball contact lands 10 formed on the same surface via the wiring patterns 5. Therefore, if the ball terminals 8 are placed in contact with the ball placement lands 10, the integrated circuit portion of the semiconductor element 1 can also be electrically connected to the outside. And a thin BGA type semiconductor device can be realized.

FIGS. 4 (a) to 4 (d) show B of the present invention, respectively.
FIG. 4 is a device cross-sectional view shown in a process order for describing one embodiment of a method of manufacturing a GA semiconductor device. First, FIG.
As shown in (a), in the present embodiment, the electrode bumps formed on one surface (front surface) of the semiconductor
Using an ultrasonic single point bonder, the inner leads of the AB tape 4 and the wiring pads formed on the other surface (back surface) of the AB tape 4 and the outer leads of the TAB tape 4 are pressed while being held down. The bonding conditions at this time were as follows: a tool was attached to the tip of the bonder, the tool temperature was 450 ° C,
The bonding time is 0.5 s / lead and the bonding load is 50 gf / lead.

Then, as shown in FIG. 4B, a resin frame 7 is attached via a polyimide tape to the wiring pad forming surface of the semiconductor element 1 and near the center of the inside thereof. In this state, the resin frame 7 is firmly bonded to the semiconductor element 1 by performing baking at 200 ° C. for 90 minutes.

Further, as shown in FIG. 4C, a liquid epoxy-based sealing resin 6 is potted into a space formed between the resin frame 7 and the semiconductor element 1 and is cured. At this time, a liquid sealing resin 6 is applied with a dispenser or the like for potting sealing. The epoxy resin 6 flows between the semiconductor element 1 and the TAB tape 4 from both ends of the tape and is filled.

Finally, as shown in FIG. 4D, Sn60-Pb is formed on the surface opposite to the resin-sealed surface of the semiconductor element 1, that is, on the ball contact land formed on the back surface.
A ball terminal 8 of 40 (% by weight) is placed in contact with a flux. Thereafter, the whole is passed through a reflow furnace at a temperature of 230 ° C. to melt the surface of the solder ball terminal 8 in a nitrogen gas stream. Thus, in the reflow furnace, the ball terminals 8 are formed in a circular shape on the ball connection lands due to the surface tension of the solder.

In the embodiment of the method of manufacturing a BGA type semiconductor device described above, when the electrode bumps 3 and the TAB tape 4 are joined (the same applies to the case where the wiring pads 9 and the TAB tape 4 are joined), the ultrasonic single Although the connection was made using a point bonder, the connection was made as follows.

[0027]

As described above, the BGA type semiconductor device of the present invention uses the TAB tape to electrically connect the integrated circuit portion formed on the front surface of the semiconductor element and the input / output terminals formed on the back surface. By doing so, it is not necessary to use an intermediate substrate for each product, and it is possible to reduce the size and thickness of the product and to reduce the material cost of the product.

In the method of manufacturing a BGA type semiconductor device according to the present invention, a TAB tape is bonded to the front and back surfaces of a semiconductor element by a bonder and a resin frame is fixed, thereby eliminating the need for an intermediate substrate for each product. There is an effect that productivity can be improved.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part of a BGA type semiconductor device excluding a resin part for describing an embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA in a state where a resin portion is added to the semiconductor device of FIG. 1;

FIG. 3 is an enlarged sectional view of a part of the semiconductor device in FIG. 2;

FIGS. 4A to 4C are cross-sectional views illustrating a method of manufacturing a BGA type semiconductor device according to an embodiment of the present invention, which are shown in process order.

FIG. 5 is a diagram illustrating a cross section of the entire BGA type semiconductor device and an enlarged cross section of a part thereof for explaining an example of the related art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Integrated circuit part 3 Electrode bump 4 TAB tape 5 Wiring pattern 6 Sealing resin 7 Resin frame 8 Ball (terminal) 9 Wiring pad 10 Ball contact land 11 Joint

Claims (6)

[Claims] A semiconductor element having an integrated circuit portion formed in a central portion of a front surface, an electrode bump provided around the integrated circuit portion, and a wiring pattern and a wiring pad formed on a back surface; A TAB tape provided on a side surface of the semiconductor element, and a ball terminal for external connection connected to the wiring pattern. 2. The BGA according to claim 1, wherein the TAB tape is formed in a U-shape on all side surfaces of the semiconductor device.
Type semiconductor device. 3. A semiconductor device having an integrated circuit portion formed in a central portion of a front surface, an electrode bump provided around the integrated circuit portion, and a wiring pattern and a wiring pad formed on a back surface, the electrode bump and the wiring pad. A TAB tape provided on the side surface of the semiconductor element, a ball terminal for external connection connected to the wiring pattern, a front surface of the semiconductor element, a back surface of the TAB tape and the semiconductor element. A resin-sealed resin that seals a peripheral portion of the BGA-type semiconductor device. 4. The semiconductor device according to claim 3, wherein the resin sealing resin is housed in a resin frame having an opening except for a surface of the semiconductor element and fixed to a back surface of the semiconductor element.
GA type semiconductor device. 5. A step of bonding the electrode bumps formed on the front surface of the semiconductor element and the wiring pads formed on the rear surface to inner leads and outer leads of a TAB tape provided on side surfaces of the semiconductor element using a bonder; A step of attaching a resin frame near the center of the inside of the wiring pad formed on the back surface of the semiconductor element and fixing the resin frame by baking; and a step in which a liquid epoxy-based resin is filled in a space formed by the resin frame and the semiconductor element. A method for manufacturing a BGA type semiconductor device, comprising: a step of potting and curing a sealing resin; and a step of forming a ball terminal on a land on a back surface of the semiconductor element. 6. A step of forming a ball terminal on a land on a back surface of the semiconductor element, wherein the ball terminal is placed on the land via a flux and then passed through a reflow furnace to melt the surface. 6. The method of manufacturing a BGA type semiconductor device according to claim 5, wherein the lands are formed in a circular shape using tension.