JPH1168110A - 表示装置の作製方法 - Google Patents
表示装置の作製方法Info
- Publication number
- JPH1168110A JPH1168110A JP23172497A JP23172497A JPH1168110A JP H1168110 A JPH1168110 A JP H1168110A JP 23172497 A JP23172497 A JP 23172497A JP 23172497 A JP23172497 A JP 23172497A JP H1168110 A JPH1168110 A JP H1168110A
- Authority
- JP
- Japan
- Prior art keywords
- short ring
- active matrix
- thin film
- short
- matrix circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000011159 matrix material Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000010408 film Substances 0.000 claims description 80
- 239000010409 thin film Substances 0.000 claims description 56
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 27
- 230000003068 static effect Effects 0.000 description 21
- 230000005611 electricity Effects 0.000 description 20
- 230000006378 damage Effects 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000010407 anodic oxide Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23172497A JPH1168110A (ja) | 1997-08-13 | 1997-08-13 | 表示装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23172497A JPH1168110A (ja) | 1997-08-13 | 1997-08-13 | 表示装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1168110A true JPH1168110A (ja) | 1999-03-09 |
| JPH1168110A5 JPH1168110A5 (enExample) | 2005-05-12 |
Family
ID=16928039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23172497A Withdrawn JPH1168110A (ja) | 1997-08-13 | 1997-08-13 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1168110A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6891523B2 (en) * | 1998-02-19 | 2005-05-10 | Seiko Epson Corporation | Active-matrix substrate, electro-optical device, method for manufacturing active-matrix substrate, and electronic equipment |
| JP2005311328A (ja) * | 2004-03-25 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 発光装置とその製造方法、電子機器 |
| JP2007158004A (ja) * | 2005-12-05 | 2007-06-21 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2009059497A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 有機ｅｌパネルの製造方法及び有機ｅｌディスプレイの製造方法 |
| US7619288B2 (en) | 2005-05-27 | 2009-11-17 | Sharp Kabushiki Kaisha | Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate |
| US7872726B2 (en) | 2008-03-07 | 2011-01-18 | Chunghwa Picture Tubes, Ltd. | Active device array mother substrate |
| CN101542372B (zh) | 2007-02-19 | 2011-09-21 | 东芝松下显示技术有限公司 | 液晶盒用长条状母材、液晶盒用多单元母材、阵列基板用基板、及液晶盒的制造方法 |
| JP2011233332A (ja) * | 2010-04-27 | 2011-11-17 | Nec Lighting Ltd | 有機エレクトロルミネッセンス照明装置の製造方法 |
| JP2012003266A (ja) * | 2010-06-21 | 2012-01-05 | Beijing Boe Optoelectronics Technology Co Ltd | マザーボード及びアレイ基板の製造方法 |
| US8198635B2 (en) | 2004-03-25 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method for manufacturing thereof and electronic appliance |
| JP2012226195A (ja) * | 2011-04-21 | 2012-11-15 | Seiko Epson Corp | 電気光学装置、電気光学装置用基板及び電子機器 |
| CN113066803A (zh) * | 2021-03-22 | 2021-07-02 | 合肥鑫晟光电科技有限公司 | 显示面板的制造方法、显示面板以及待切割显示面板 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02242229A (ja) * | 1989-03-16 | 1990-09-26 | Matsushita Electron Corp | 液晶表示装置の製造方法 |
| JPH06332011A (ja) * | 1993-05-18 | 1994-12-02 | Sony Corp | 半導体集合基板及び半導体装置 |
| JPH07140488A (ja) * | 1993-11-17 | 1995-06-02 | Matsushita Electric Ind Co Ltd | 液晶表示パネル素材及び液晶表示パネルの製造方法 |
| JPH07287250A (ja) * | 1994-04-19 | 1995-10-31 | Oki Electric Ind Co Ltd | 多面取り薄膜トランジスタアレイ基板及びその検査方法 |
| JPH08330594A (ja) * | 1995-05-31 | 1996-12-13 | Sony Corp | 絶縁体基板の製造方法および半導体装置の製造方法 |
| JPH09197376A (ja) * | 1996-01-11 | 1997-07-31 | Casio Comput Co Ltd | 半導体素子静電対策構造 |
-
1997
- 1997-08-13 JP JP23172497A patent/JPH1168110A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02242229A (ja) * | 1989-03-16 | 1990-09-26 | Matsushita Electron Corp | 液晶表示装置の製造方法 |
| JPH06332011A (ja) * | 1993-05-18 | 1994-12-02 | Sony Corp | 半導体集合基板及び半導体装置 |
| JPH07140488A (ja) * | 1993-11-17 | 1995-06-02 | Matsushita Electric Ind Co Ltd | 液晶表示パネル素材及び液晶表示パネルの製造方法 |
| JPH07287250A (ja) * | 1994-04-19 | 1995-10-31 | Oki Electric Ind Co Ltd | 多面取り薄膜トランジスタアレイ基板及びその検査方法 |
| JPH08330594A (ja) * | 1995-05-31 | 1996-12-13 | Sony Corp | 絶縁体基板の製造方法および半導体装置の製造方法 |
| JPH09197376A (ja) * | 1996-01-11 | 1997-07-31 | Casio Comput Co Ltd | 半導体素子静電対策構造 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6891523B2 (en) * | 1998-02-19 | 2005-05-10 | Seiko Epson Corporation | Active-matrix substrate, electro-optical device, method for manufacturing active-matrix substrate, and electronic equipment |
| JP2005311328A (ja) * | 2004-03-25 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 発光装置とその製造方法、電子機器 |
| US8674369B2 (en) | 2004-03-25 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method for manufacturing thereof and electronic appliance |
| US8198635B2 (en) | 2004-03-25 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method for manufacturing thereof and electronic appliance |
| US7619288B2 (en) | 2005-05-27 | 2009-11-17 | Sharp Kabushiki Kaisha | Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate |
| JP2007158004A (ja) * | 2005-12-05 | 2007-06-21 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| CN101542372B (zh) | 2007-02-19 | 2011-09-21 | 东芝松下显示技术有限公司 | 液晶盒用长条状母材、液晶盒用多单元母材、阵列基板用基板、及液晶盒的制造方法 |
| JP2009059497A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 有機ｅｌパネルの製造方法及び有機ｅｌディスプレイの製造方法 |
| US7872726B2 (en) | 2008-03-07 | 2011-01-18 | Chunghwa Picture Tubes, Ltd. | Active device array mother substrate |
| JP2011233332A (ja) * | 2010-04-27 | 2011-11-17 | Nec Lighting Ltd | 有機エレクトロルミネッセンス照明装置の製造方法 |
| JP2012003266A (ja) * | 2010-06-21 | 2012-01-05 | Beijing Boe Optoelectronics Technology Co Ltd | マザーボード及びアレイ基板の製造方法 |
| US8633065B2 (en) | 2010-06-21 | 2014-01-21 | Beijing Boe Optoelectronics Technology Co., Ltd. | Method for manufacturing mother substrate and array substrate |
| JP2012226195A (ja) * | 2011-04-21 | 2012-11-15 | Seiko Epson Corp | 電気光学装置、電気光学装置用基板及び電子機器 |
| CN113066803A (zh) * | 2021-03-22 | 2021-07-02 | 合肥鑫晟光电科技有限公司 | 显示面板的制造方法、显示面板以及待切割显示面板 |
| US12426363B2 (en) | 2021-03-22 | 2025-09-23 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Method for manufacturing display panel, display panel and to-be-cut display panel |
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Legal Events
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