JPH11354810A - Display panel and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the contact resistances between n-type semiconductor films at the drain and source sides and drain and source electrodes formed thereon, in a liquid crystal display panel having thin-film transistors as switching elements. SOLUTION: High quality Cr silicide films 29D, 29S and Cr films 28D, 28S are formed between n-type semiconductor films 27D, 27S of an n-type amorphous Si and Al base metal films 31 formed respectively thereon. After stripping resist films 33D, 33S, a protective film 32 is stripped by the wet etching but since the end faces of the Cr film 28S are covered with source electrodes of the Al base metal film 31, the side etching of the Cr film 28C can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display panel such as a liquid crystal display panel and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 25A is a plan view of a part of an example of a conventional liquid crystal display panel, and FIG.
FIG. 3 shows a cross-sectional view along the line. When this liquid crystal display panel is manufactured, first, as shown in FIG. 26, a gate electrode 2 and a gate line (scanning line) 3 (FIG. 25) made of Al or an Al alloy are provided at predetermined locations on the upper surface of a glass substrate 1. (A), a gate insulating film 4 made of silicon nitride is formed on the upper surface, a semiconductor film 5 made of neutral amorphous silicon is formed on the upper surface, and the gate electrode 2 is formed on the upper surface. A channel protection film 6 made of silicon nitride is formed at a predetermined location above. Next, the channel protective film 6 is subjected to a surface treatment using an ammonium fluoride solution.
The natural oxide film (not shown) on the surface of the semiconductor film 5 in a region other than the lower region is removed. Next, as shown in FIG.
An N-type semiconductor film 7 made of N-type amorphous silicon is formed on the entire upper surface. Next, as shown in FIG. 28, the N-type semiconductor film 7 and the semiconductor film 5 are formed by photolithography.
Remove unnecessary parts of. In this state, the semiconductor film 5A is formed in a portion corresponding to the gate electrode 2 at a predetermined position on the upper surface of the gate insulating film 4, that is, in a device area.
N-type semiconductor films 7D and 7S are formed on both sides of the upper surface of the channel protective film 6 and on the upper surface of the semiconductor film 5A on both sides thereof. Next, as shown in FIGS. 25A and 25B, a source electrode 8 made of ITO is formed at a predetermined position on the upper surface of the source-side N-type semiconductor film 7S and the upper surface of the gate insulating film 4.
And a pixel electrode 9 are formed. Next, a drain electrode 10 and a drain line (signal line) 11 made of Al are formed on the upper surface of the drain-side N-type semiconductor film 7D and another predetermined position on the upper surface of the gate insulating film 4. In this case, the gate electrode 2, the gate insulating film 4, the semiconductor film 5A, the N-type semiconductor film 7
S, 7D, the source electrode 8 and the drain electrode 10 constitute a thin film transistor as a switching element.

[0003]

However, in the conventional method of manufacturing such a liquid crystal display panel, the step of forming the N-type semiconductor film 7 and the step of forming an Al-based metal for forming the drain electrode 10 and the drain line 11 are performed. An N-type semiconductor film 7 is formed by a photolithography method between the step of forming the film and the step of forming the film.
Since there is a step of forming the D, 7S and the semiconductor film 5A and a step of forming an ITO film and forming the source electrode 8 and the pixel electrode 9 by photolithography, the surfaces of the N-type semiconductor films 7D and 7S are oxidized. There is a problem that the contact resistance between the N-type semiconductor films 7D and 7S and the source electrode 8 and the drain electrode 10 is increased, and the on-current of the thin film transistor is reduced. An object of the present invention is to reduce the contact resistance between the source-side and drain-side N-type semiconductor films and the source electrode and the drain electrode formed thereon.

[0004]

According to a first aspect of the present invention, there is provided a display panel including a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor. A gate insulating film provided on the gate electrode, a semiconductor film provided in a device area on the gate insulating film, an N-type semiconductor film provided on a drain side on the semiconductor film, a silicide film, and a drain electrode. , An N-type semiconductor film, a silicide film, and a source electrode provided on the source side on the semiconductor film. Claim 2
The display panel according to the described invention is a display panel including a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor, wherein the thin film transistor is a gate electrode and a gate insulating film provided on the gate electrode. A semiconductor film provided in a device area on the gate insulating film; a drain-side and source-side N-type semiconductor films provided on the gate insulating film on both sides of the semiconductor film; And a silicide film and a drain electrode provided on the type semiconductor film, and a silicide film and a source electrode provided on the source-side N-type semiconductor film. 4. A display panel according to claim 3, wherein the display panel includes a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor. The display panel according to claim 3, wherein the thin film transistor is provided with a gate electrode and a gate insulating film provided on the gate electrode. A film, a semiconductor film provided in a device area on the gate insulating film, an N-type semiconductor film provided on a drain side on the semiconductor film, a silicide film, a silicidable metal film and a drain electrode, N provided on the source side on the semiconductor film
The semiconductor device includes a type semiconductor film, a silicide film, a metal film capable of being silicided, and a source electrode, and the source electrode covers an end surface of the metal film on the other side. 5. The display panel according to claim 4, wherein the display panel includes a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor. The display panel according to claim 4, wherein the thin film transistor is provided with a gate electrode and a gate insulating film provided on the gate electrode. A film, a semiconductor film provided in a device area on the gate insulating film, drain-side and source-side N-type semiconductor films provided on the gate insulating film and on both sides of the semiconductor film; Film, a silicidable metal film, and a drain electrode provided on the N-type semiconductor film on the side, and a silicide film, a metal film, and a source electrode on the N-type semiconductor film on the source side. And the end face of the metal film on the other side is covered with the source electrode. Claim 5
The display panel according to the invention described in claim 3 is the invention according to claim 3 or 4, wherein the source electrode is formed of the same material as the pixel electrode connected to the source electrode. 7. A display panel according to claim 6, wherein the display panel includes a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor. The display panel according to claim 6, wherein the thin film transistor is provided with a gate electrode and a gate insulating film provided on the gate electrode. A film, a semiconductor film provided in a device area on the gate insulating film, drain-side and source-side N-type semiconductor films provided on the gate insulating film and on both sides of the semiconductor film; A silicide film provided on the N-type semiconductor film on the side, a metal film and a drain electrode capable of being silicided containing N-type ions, and a silicide film provided on the N-type semiconductor film on the source side. It comprises a metal film capable of being silicided and a source electrode. 8. A method of manufacturing a display panel according to claim 7, wherein a gate electrode, a gate insulating film, a semiconductor film, an N-type semiconductor film, and a metal film capable of being silicided are formed in this order on the substrate. Forming a silicide film at an interface between a film and the metal film, removing the metal film, and leaving the N-type semiconductor film and the silicide film on the drain and source sides of the semiconductor film Forming a pixel electrode connected to the silicide film on the source side, forming a metal film for forming a source / drain electrode and a metal film for protection on the entire upper surface in this order, and processing these metal films Forming a drain electrode on the drain-side silicide film, leaving the protective metal film thereon, and forming a source electrode on the source-side silicide film. Rutotomoni is left the protective metal film thereon, a step of removing the protective metal film remaining after this, those provided with the. A method of manufacturing a display panel according to claim 8, wherein a gate electrode, a gate insulating film, and a semiconductor film are formed in this order on a substrate, and a channel protection film is formed at a predetermined position on the semiconductor film. Implanting N-type ions into the semiconductor film using the channel protective film as a mask, thereby forming the semiconductor film in a region other than under the channel protective film as an N-type semiconductor film; A step of forming a silicide-forming metal film to form a silicide film at an interface between the N-type semiconductor film and the metal film; a step of peeling the metal film; and a step of connecting to the source-side silicide film. Forming a metal electrode for forming source / drain electrodes and a metal film for protection on the entire upper surface in this order, and processing these metal films to form a pixel electrode on the drain side. Forming a drain electrode on the reside film and leaving the protective metal film thereon, and forming a source electrode on the silicide film on the source side and leaving the protective metal film thereon, Removing the remaining remaining protective metal film. According to a ninth aspect of the present invention, there is provided a display panel manufacturing method, wherein an N-type semiconductor film, a silicide film, and a metal film are formed on a drain side and a source side on a semiconductor film; Forming a drain electrode on the drain-side metal film and forming a source electrode covering the entire surface including the periphery of the source-side metal film. is there. According to a tenth aspect of the present invention, there is provided a method of manufacturing a display panel, comprising: forming a gate electrode, a gate insulating film, and a semiconductor film on a substrate in this order; And
Implanting N-type ions into the semiconductor film using the channel protective film as a mask, thereby converting the semiconductor film into an N-type semiconductor film in a region other than under the channel protective film; and forming a silicide on the N-type semiconductor film. Forming a possible metal film to form a silicide film at an interface between the N-type semiconductor film and the metal film; forming a pixel electrode connected to the source-side metal film; Forming a drain electrode on the metal film on the side and forming a source electrode covering the entire surface including the periphery of the metal film on the source side. A method of manufacturing a display panel according to claim 11, wherein an N-type semiconductor film, a silicide film, and a metal film are formed on a drain side and a source side on a semiconductor film, and the method is connected to the source-side metal film. Forming a source electrode covering the entire surface including the periphery of the source-side metal film with the same material as the pixel electrode, and forming a drain electrode on the drain-side metal film. And a process. According to a twelfth aspect of the present invention, there is provided a method of manufacturing a display panel, comprising: forming a gate electrode, a gate insulating film, and a semiconductor film on a substrate in this order; Implanting N-type ions into the semiconductor film using the channel protective film as a mask, thereby forming the semiconductor film in a region other than under the channel protective film as an N-type semiconductor film; Forming a silicide-forming metal film to form a silicide film at an interface between the N-type semiconductor film and the metal film; forming a pixel electrode connected to the source-side metal film; Forming a source electrode covering the entire surface including the periphery of the source-side metal film with the same material as the electrode, and forming a drain electrode on the drain-side metal film. It is obtained by Bei. 14. The method of manufacturing a display panel according to claim 13, wherein a semiconductor film having a gate electrode, a gate insulating film, a source region, a drain region, and a metal film capable of being silicided are formed in this order on the substrate. Forming a silicide film at an interface between a source region and a drain region of the film and the metal film; and implanting N-type ions into the metal film and the semiconductor film so that the source region and the drain region of the semiconductor film are an N-type semiconductor. Forming a film, and forming a pixel electrode connected to the metal film on the source region. According to the invention described above, the high-quality silicide film is formed between the drain-side and source-side N-type semiconductor films and the drain electrode and the source electrode formed thereon, respectively. Source side N
The contact resistance between the mold semiconductor film and the drain and source electrodes formed thereon can be reduced.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1A is a plan view of a main part of a liquid crystal display panel according to a first embodiment of the present invention, and FIG. FIG. When manufacturing this liquid crystal display panel, first, as shown in FIG. 2, an Al-based metal film made of Al or an Al alloy formed by sputtering at a predetermined position on the upper surface of the glass substrate 21 is subjected to photolithography. A gate electrode 22 and a gate line (scanning line) 23 (see FIG. 1A) are formed by processing into a predetermined pattern by a method (hereinafter, referred to as a PL method). next,
A gate insulating film 24 made of silicon nitride, a semiconductor film 25 made of neutral amorphous silicon, and a film 26 for forming a channel protective film made of silicon nitride are successively formed on the entire upper surface by CVD. Next, the channel protection film forming film 26 is processed into a predetermined pattern by the PL method, so that the gate electrode 2 on the upper surface of the semiconductor film 25 is formed.
A channel protection film 26A is formed at a predetermined location on the second.
Next, by surface treatment with ammonium fluoride solution,
Semiconductor film 2 in a region other than under channel protective film 26A
The native oxide film (not shown) on the surface of No. 5 is removed.

[0006] Next, as shown in FIG.
An N-type semiconductor film 27 made of N-type amorphous silicon is formed by the D method. Next, a natural oxide film (not shown) on the surface of the N-type semiconductor film 27 is removed by a surface treatment using an ammonium fluoride solution. Next, the N-type semiconductor film 27
A Cr film 28 is formed on the upper surface by sputtering. Then, since the interface between the N-type semiconductor film 27 and the Cr film 28 is clean, a high-quality Cr silicide film 29 is formed at the interface between the N-type semiconductor film 27 and the Cr film 28. Next, as shown in FIG. 4, unnecessary portions of the Cr film 28, the Cr silicide film 29, the N-type semiconductor film 27, and the semiconductor film 25 are removed by the PL method. In this state, the semiconductor film 25A is formed at a predetermined position on the upper surface of the gate insulating film 24 at a portion corresponding to the gate electrode 22, that is, at a device area. Also, N-type semiconductor films 29D and 29D are formed on both sides of the upper surface of the channel protective film 26A and on the upper surface of the semiconductor film 25A on both sides thereof.
S, Cr silicide films 29D, 29S and Cr film 28
D, 28S are formed.

Next, as shown in FIG. 5, a transparent metal film film made of a transparent ITO (indium-tin oxide) or the like formed by a sputtering method is processed into a predetermined pattern by a PL method to obtain a source. The pixel electrode 30 is formed at a predetermined position on the upper surface of the Cr film 28S on the side and a predetermined position on the upper surface of the gate insulating film 24. Next, as shown in FIG. 6, an Al-based metal film 31 and a protective C
The r film 32 is continuously formed. Next, the protective Cr film 32
At predetermined locations on the upper surface of the substrate, resist films 33D and 33S for forming a drain electrode, a drain line (signal line) and a source electrode are formed. In this case, the resist film 33
The size of D on the Cr film 28D is the same as the size of the Cr film 28D, but the size of the resist film 33S is larger than the size of the Cr film 28S by a predetermined size. The protective Cr film 32 is for preventing the pixel electrode 30 made of ITO and the Al-based metal film 31 from being corroded by a battery reaction during resist development.

[0008] Next, as shown in FIG.
Unnecessary portions of the protective Cr film 32 and the Al-based metal film 31 are removed by performing wet etching using D and 33S as a mask. Next, the resist films 33D and 33S
Is peeled off. Next, the protective Cr film 32 is removed by wet etching. Then, as shown in FIGS. 1A and 1B, a drain electrode 34 and a drain line 35 made of the Al-based metal film 31 are formed at predetermined positions on the upper surface of the Cr film 28D and the upper surface of the gate insulating film 24. You. Also,
A source electrode 36 made of the Al-based metal film 31 is formed on the upper surface of the Cr film 28S and a predetermined location around the Cr film 28S. In this case, the end surfaces of the Cr film 28S, the Cr silicide film 29S, and the N-type semiconductor film 27S are covered with the source electrode 36. The reason for this will be described later.
Then, the gate electrode 22, the semiconductor film 25A, the N-type semiconductor films 27D and 27S, the Cr silicide films 29D and 29S,
The Cr films 28D and 28S, the drain electrode 34, and the source electrode 36 constitute a thin film transistor as a switching element.

Here, the reason why the end surfaces of the source-side Cr film 28S, Cr silicide film 29S and N-type semiconductor film 27S are covered with the source electrode 36 will be described. First, FIG.
As shown in (A) and (B), when the three predetermined end faces a, b, and c of the resist film 33S coincide with the three predetermined end faces of the Cr film 28S, the resist film 33S is used as a mask to wet the resist film 33S. Protective Cr by etching
When unnecessary portions of the film 32 and the Al-based metal film 31 are removed, three predetermined end faces of the Cr film 28D are exposed. In this state, after the resist films 33D and 33S are peeled off and the protective Cr film 32 is peeled off by wet etching, the pixel electrode 30 made of ITO and the Cr film 2 are removed.
8D is connected, the ITO-Cr-based battery reaction in the Cr etchant causes the reaction shown in FIG.
As shown in (B), side etching of the Cr film 28S progresses violently, and is reduced to about 1/3 in about 10 seconds. In such a case, the contact characteristics on the source side deteriorate, which is not preferable. Therefore, FIG.
As shown in (1), when the end surfaces of the source-side Cr film 28S, Cr silicide film 29S, and N-type semiconductor film 27S are covered with the source electrode 36, side etching of the Cr film 28S is prevented.

In the liquid crystal display panel manufactured as described above, a high-quality Cr silicide film 29D is provided between the N-type semiconductor films 27D and 27S and the drain electrode 34 and the source electrode 36 formed thereon. , 29S and Cr
Since the films 28D and 28S are formed, the N-type semiconductor film 2
7D, 27S and the drain electrode 34 formed on each of them.
In addition, the contact resistance between the gate electrode and the source electrode 36 can be reduced, and the decrease in ON current due to parasitic resistance can be reduced.

(Second Embodiment) FIG. 10A is a plan view of a main part of a liquid crystal display panel according to a second embodiment of the present invention, and FIG. 10B is a cross-sectional view taken along the line BB. It is shown. When manufacturing this liquid crystal display panel,
Steps shown in FIGS. 2 to 4 are the same as those in the first embodiment, and the subsequent steps will be described. FIG.
As shown in FIG. 7, an ITO film formed by sputtering is formed into a predetermined pattern by a PL method at a predetermined position on and around the source-side Cr film 28S and a predetermined position on the upper surface of the gate insulating film 24. By doing so, the source electrode 3
6 and the pixel electrode 30 are formed. In this case, the Cr film 28
Three predetermined end faces of the S, Cr silicide film 29S and the N-type semiconductor film 27S are covered by the source electrode 36, and the remaining one end face is covered by the pixel electrode 30.
Next, as shown in FIG. 12, an Al-based metal film 31 and a protective Cr film 32 are continuously formed on the entire upper surface by a sputtering method. Next, a resist film 33D for forming a drain electrode and a drain line is formed at a predetermined position on the upper surface of the protective Cr film 32. In this case, the resist film 3
The size of the 3D Cr film 28D is the same as that of the Cr film 28D.
The size is the same. Also, the protective Cr film 32
Indicates that the pixel electrode 30 made of ITO and the A
This is to prevent the l-type metal film 31 from corroding due to a battery reaction.

Next, as shown in FIG.
Unnecessary portions of the protective Cr film 32 and the Al-based metal film 31 are removed by performing wet etching using the 3D as a mask. Next, the resist film 33D is peeled off. Next, the protective Cr film 32 is removed by wet etching. Then, as shown in FIGS. 10A and 10B, C
A drain electrode 34 and a drain line 35 made of the Al-based metal film 31 are formed at predetermined positions on the upper surface of the r film 28D and the upper surface of the gate insulating film 24. In this case, the Cr film 2
8S, Cr silicide film 29S and N-type semiconductor film 27S
Is covered with the source electrode 36 made of ITO, so that the side etching of the Cr film 28S is prevented.

In the liquid crystal display panel manufactured as described above, a high quality Cr silicide film 29D is formed between the N-type semiconductor films 27D and 27S and the drain electrode 34 and the source electrode 36 formed thereon. , 29S and Cr
Since the films 28D and 28S are formed, the N-type semiconductor film 2
7D, 27S and the drain electrode 34 formed on each of them.
In addition, the contact resistance between the gate electrode and the source electrode 36 can be reduced, and the decrease in ON current due to parasitic resistance can be reduced.

(Third Embodiment) FIG. 14A is a plan view of a main part of a liquid crystal display panel according to a third embodiment of the present invention, and FIG. 14B is a cross-sectional view taken along the line BB. It is shown. When manufacturing this liquid crystal display panel,
Steps shown in FIGS. 2 to 3 are the same as those in the first embodiment, and the subsequent steps will be described. FIG.
As shown in FIG. 3, the Cr film 28 shown in FIG. 3 is peeled off by wet etching. Next, as shown in FIG.
Unnecessary portions of the Cr silicide film 29, the N-type semiconductor film 27, and the semiconductor film 25 are removed by a method. In this state, the semiconductor film 2 is placed at a predetermined position on the upper surface of the gate insulating film 24 at a portion corresponding to the gate electrode 22, that is, at a device area.
5A are formed. The N-type semiconductor films 27D and 27S and the Cr silicide film 29 are formed on both sides of the upper surface of the channel protection film 26A and on the upper surface of the semiconductor film 25A on both sides thereof.
D, 29S are formed.

Next, as shown in FIG. 17, the ITO film formed by the sputtering method is processed into a predetermined pattern by the PL method, so that the Cr silicide film 29 on the source side is formed.
The pixel electrode 30 is formed at a predetermined location on the upper surface of S and at a predetermined location on the upper surface of the gate insulating film 24. Next, the Al-based metal film 31 and the protective Cr film 3 are formed on the entire upper surface by sputtering.
2 is continuously formed. Next, a resist film 33 for forming a drain electrode, a drain line (signal line) and a source electrode is formed at a predetermined position on the upper surface of the protective Cr film 32.
D, 33S are formed. In this case, the size of the resist film 33D on the Cr silicide film 29D is the same as the size of the Cr silicide film 29D, and the size of the resist film 33S on the Cr silicide film 29S is also the same as the size of the Cr silicide film 29S. It has become. Further, the protective Cr film 32 is used for developing the resist when developing the resist.
This is to prevent the pixel electrode 30 made of O and the Al-based metal film 31 from being corroded by a battery reaction.

Next, as shown in FIG.
Unnecessary portions of the protective Cr film 32 and the Al-based metal film 31 are removed by performing wet etching using the 3D and 33S as a mask. Next, the resist films 33D, 33
S is peeled off. Next, the protective Cr film 32 is removed by wet etching. Then, FIGS. 14A and 14B
As shown in FIG. 7, a drain electrode 34 and a drain line 35 made of the Al-based metal film 31 are formed at predetermined locations on the upper surface of the Cr silicide film 29D and the upper surface of the gate insulating film 24. Further, a source electrode 36 made of the Al-based metal film 31 is formed at a predetermined position on the upper surface of the Cr silicide film 29S and on the upper surface of the pixel electrode 30. And the gate electrode 2
2. Semiconductor film 25A, N-type semiconductor films 27D, 27S, C
The r silicide films 29D and 29S, the drain electrode 34, and the source electrode 36 constitute a thin film transistor as a switching element.

In the liquid crystal display panel manufactured as described above, a high-quality Cr silicide film 29D is provided between the N-type semiconductor films 27D and 27S and the drain electrode 34 and the source electrode 36 formed thereon. , 29S, the contact resistance between the N-type semiconductor films 27D, 27S and the drain electrode 34 and the source electrode 36 formed thereon can be reduced, and the on-current due to the parasitic resistance can be reduced. Can be reduced.

(Fourth Embodiment) FIG. 19A is a plan view of a main part of a liquid crystal display panel according to a fourth embodiment of the present invention, and FIG. 19B is a cross-sectional view taken along the line BB. It is shown. When manufacturing this liquid crystal display panel,
The steps up to the point shown in FIG. 2 are the same as those in the first embodiment, and the subsequent steps will be described. As shown in FIG. 20, a Cr film 28 is formed on the entire upper surface by a sputtering method. Then, since the interface between the semiconductor film 25 and the Cr film 28 in a region other than below the channel protective film 26A is clean, the interface between the semiconductor film 25 and the Cr film 28 in the region other than below the channel protective film 26A has good Cr. A silicide film 29 is formed. Next, as shown in FIG. 21, N-type ions such as phosphorus ions are implanted using the channel protective film 26A as a mask. The implanted N-type ions form the Cr film 28
And penetrates the Cr film 28 and the Cr silicide film 29 into the semiconductor film 25 in a region other than below the channel protective film 26A. As a result, the Cr film 2
The film quality of No. 8 is improved by implantation of N-type ions. Also,
A semiconductor film 25A made of neutral amorphous silicon is formed under the channel protection film 26A, and the Cr silicide film 2 is formed.
An N-type semiconductor film 27 made of N-type amorphous silicon is formed underneath.

Next, as shown in FIG. 22, unnecessary portions of the Cr film 28, the Cr silicide film 29, and the N-type semiconductor film 27 are removed by the PL method. In this state, the semiconductor film 25A and the N-type semiconductor films 27D and 27S are formed in a portion corresponding to the gate electrode 22 at a predetermined position on the upper surface of the gate insulating film 24, that is, in a device area. A Cr silicide film 29 is formed on the upper surfaces of the N-type semiconductor films 27D and 27S.
D, 29S are formed. Further, both sides of the upper surface of the channel protective film 26A and the Cr silicide films 29D, 29S
Are formed with Cr films 28D and 28S.

Next, as shown in FIG. 23, the ITO film formed by the sputtering method is processed into a predetermined pattern by the PL method, thereby forming a predetermined portion on the upper surface of the source-side Cr film 28S and a gate insulating film. A pixel electrode 30 is formed at a predetermined position on the upper surface of the pixel 24. Next, an Al-based metal film 31 and a protective Cr film 32 are successively formed on the entire upper surface by sputtering. Next, resist films 33D and 33S for forming a drain electrode, a drain line (signal line) and a source electrode are formed at predetermined positions on the upper surface of the protective Cr film 32. In this case, the Cr film 28D of the resist film 33D
The size on the top is the same as the size of the Cr film 28D, and the size of the resist film 33S on the Cr film 28S is the same as the size of the Cr film 28S. The protective Cr film 32 is for preventing the pixel electrode 30 made of ITO and the Al-based metal film 31 from being corroded by a battery reaction during resist development.

Next, as shown in FIG.
Unnecessary portions of the protective Cr film 32 and the Al-based metal film 31 are removed by performing wet etching using the 3D and 33S as a mask. Next, the resist films 33D, 33
S is peeled off. Next, the protective Cr film 32 is removed by wet etching. Then, FIG. 19 (A), (B)
As shown in FIG. 7, the upper surface of the Cr film 28D and the gate insulating film 2
A drain electrode 34 and a drain line 35 made of the Al-based metal film 31 are formed at predetermined locations on the upper surface of the substrate 4. Further, a source electrode 36 made of the Al-based metal film 31 is formed at a predetermined location on the upper surface of the Cr film 28S and the upper surface of the pixel electrode 30. In this case, the end face of the Cr film 28S is not covered with the source electrode 36, but the quality of the Cr film 28 is N
The Cr film 28
S side etching is prevented. Then, the gate electrode 22, the semiconductor film 25A, the N-type semiconductor films 27D, 27
S, Cr silicide film 29D, 29S, Cr film 28D,
The 28S, the drain electrode 34 and the source electrode 36 constitute a thin film transistor as a switching element.

Also, in the liquid crystal display panel manufactured as described above, a high quality Cr silicide film 29D is formed between the N-type semiconductor films 27D and 27S and the drain electrode 34 and the source electrode 36 formed thereon. , 29S and Cr
Since the films 28D and 28S are formed, the N-type semiconductor film 2
7D, 27S and the drain electrode 34 formed on each of them.
In addition, the contact resistance between the gate electrode and the source electrode 36 can be reduced, and the decrease in ON current due to parasitic resistance can be reduced.

In the first to third embodiments, the case where the N-type semiconductor films 27D and 27S are formed on both sides of the upper surface of the semiconductor film 25A has been described. However, the present invention is not limited to this. For example, in FIG.
N-type ions such as phosphorus ions may be implanted into the semiconductor film 25 using the 6A as a mask to form an N-type semiconductor film in a region other than below the channel protective film 26A. In the first to third embodiments, the case where the channel protective film 26A is provided has been described. However, the present invention is not limited to this, and the channel protective film 26A may be omitted. Further, in the first to fourth embodiments, the case where the thin film transistor is formed using amorphous silicon has been described. However, the present invention is not limited to this, and the thin film transistor may be formed using polysilicon.

[0024]

As described above, according to the present invention, a good-quality silicide film is formed between the drain-side and source-side N-type semiconductor films and the drain and source electrodes formed thereon. As a result, the contact resistance between the drain-side and source-side N-type semiconductor films and the drain electrode and the source electrode formed on each of the N-type semiconductor films can be reduced. Can be reduced.

[Brief description of the drawings]

FIG. 1A is a plan view of a main part of a liquid crystal display panel according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along the line BB.

FIG. 2 is a sectional view showing an initial step in manufacturing the liquid crystal display panel shown in FIG.

FIG. 3 is a sectional view showing a step following FIG. 2;

FIG. 4 is a sectional view showing a step following FIG. 3;

FIG. 5 is a sectional view showing a step following FIG. 4;

FIG. 6 is a sectional view showing a step following FIG. 5;

FIG. 7 is a sectional view showing a step following FIG. 6;

FIG. 8 shows a step of forming a source-side Cr film and C
It is shown to explain a case where the end surfaces of the r silicide film and the N-type semiconductor film are not covered with the source electrode,
(A) is a plan view, and (B) is a cross-sectional view along the line BB.

9A and 9B are views for explaining inconvenience in the case shown in FIG. 8, in which FIG. 9A is a plan view, and FIG. 9B is a cross-sectional view along the line BB.

FIG. 10A is a plan view of a main part of a liquid crystal display panel according to a second embodiment of the present invention, and FIG. 10B is a cross-sectional view taken along the line BB.

FIG. 11 is a cross-sectional view of the liquid crystal display panel shown in FIG.
Sectional drawing which shows a predetermined | prescribed process.

FIG. 12 is a sectional view showing a step following FIG. 11;

FIG. 13 is a sectional view showing a step following FIG. 12;

14A is a plan view of a main part of a liquid crystal display panel according to a third embodiment of the present invention, and FIG. 14B is a cross-sectional view taken along the line BB.

FIG. 15 illustrates a process for manufacturing the liquid crystal display panel shown in FIG.
Sectional drawing which shows a predetermined | prescribed process.

FIG. 16 is a sectional view showing a step following FIG. 15;

FIG. 17 is a sectional view showing a step following FIG. 16;

FIG. 18 is a sectional view showing a step following FIG. 17;

FIG. 19A is a plan view of a main part of a liquid crystal display panel according to a fourth embodiment of the present invention, and FIG. 19B is a cross-sectional view taken along the line BB.

FIG. 20 illustrates a process for manufacturing the liquid crystal display panel shown in FIG.
Sectional drawing which shows a predetermined | prescribed process.

FIG. 21 is a sectional view showing a step following FIG. 20;

FIG. 22 is a sectional view showing a step following FIG. 21;

FIG. 23 is a sectional view showing a step following FIG. 22;

FIG. 24 is a sectional view showing a step following FIG. 23;

FIG. 25A is a plan view of a part of an example of a conventional liquid crystal display panel, and FIG. 25B is a cross-sectional view taken along line BB.

FIG. 26 illustrates a process for manufacturing the liquid crystal display panel shown in FIG.
Sectional drawing which shows the initial process.

FIG. 27 is a sectional view showing a step following FIG. 26;

FIG. 28 is a sectional view showing a step following FIG. 27;

[Explanation of symbols]

 Reference Signs List 21 glass substrate 22 gate electrode 24 gate insulating film 25A semiconductor film 26A channel protective film 27D, 27S N-type semiconductor film 28D, 28S Cr film 29D, 29S Cr silicide film 30 pixel electrode 34 drain electrode 36 source electrode

Claims (13)

[Claims] 1. A display panel comprising a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor, wherein the thin film transistor has a gate electrode,
A gate insulating film provided on the gate electrode, a semiconductor film provided in a device area on the gate insulating film, an N-type semiconductor film provided on a drain side of the semiconductor film, a silicide film, and a drain electrode And a N-type semiconductor film, a silicide film, and a source electrode provided on the source side of the semiconductor film. 2. A display panel comprising a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor, wherein the thin film transistor has a gate electrode,
A gate insulating film provided on the gate electrode; a semiconductor film provided in a device area on the gate insulating film; and a drain side and a source provided on the gate insulating film and on both sides of the semiconductor film. , A silicide film and a drain electrode provided on the drain-side N-type semiconductor film, and a silicide film and a source electrode provided on the source-side N-type semiconductor film. A display panel. 3. A display panel comprising a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor, wherein the thin film transistor has a gate electrode,
A gate insulating film provided on the gate electrode; a semiconductor film provided in a device area on the gate insulating film; an N-type semiconductor film provided on a drain side of the semiconductor film; a silicide film; A metal film and a drain electrode, and an N-type semiconductor film, a silicide film, a silicidable metal film and a source electrode provided on the source side of the semiconductor film, and the source electrode forms the source side. A display panel, wherein an end face of a metal film is covered. 4. A display panel comprising a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor, wherein the thin film transistor has a gate electrode,
A gate insulating film provided on the gate electrode; a semiconductor film provided in a device area on the gate insulating film; and a drain side and a source provided on the gate insulating film and on both sides of the semiconductor film. Side N-type semiconductor film, and a silicide film provided on the drain side N-type semiconductor film;
A metal film and a drain electrode that can be silicided, and a silicide film, a metal film and a source electrode that can be silicided provided on the N-type semiconductor film on the source side, and the metal on the source side is formed by the source electrode. A display panel, wherein an end face of the film is covered. 5. The invention according to claim 3, wherein
The display panel, wherein the source electrode is formed of the same material as the pixel electrode connected to the source electrode. 6. A display panel comprising a thin film transistor and a pixel electrode connected to a source electrode of the thin film transistor, wherein the thin film transistor has a gate electrode,
A gate insulating film provided on the gate electrode; a semiconductor film provided in a device area on the gate insulating film; and a drain side and a source provided on the gate insulating film and on both sides of the semiconductor film. Side N-type semiconductor film, and a silicide film provided on the drain side N-type semiconductor film;
A silicide-containing metal film containing N-type ions and a drain electrode; a silicide film provided on the source-side N-type semiconductor film; a silicide-containing metal film containing N-type ions; and a source electrode. A display panel. 7. A gate electrode, a gate insulating film, a semiconductor film, an N-type semiconductor film, and a metal film capable of being silicided are formed in this order on a substrate, and a silicide is formed at an interface between the N-type semiconductor film and the metal film. Forming a film, removing the metal film, leaving the N-type semiconductor film and the silicide film on the drain side and the source side on the semiconductor film, and connecting to the silicide film on the source side. Forming a pixel electrode to be formed, and forming a metal film for forming source / drain electrodes and a metal film for protection on the entire upper surface in this order, and processing these metal films to form the silicide film on the drain side. Forming a drain electrode thereon and leaving the protective metal film thereon; and forming a source electrode on the source-side silicide film and forming the protective metal film thereon. And peeling off the remaining protective metal film thereafter. A method of manufacturing a display panel, comprising: 8. A step of forming a gate electrode, a gate insulating film, and a semiconductor film on a substrate in this order, forming a channel protection film at a predetermined position on the semiconductor film, and using the channel protection film as a mask. Implanting N-type ions into the semiconductor film to make the semiconductor film an N-type semiconductor film in a region other than below the channel protective film; and forming a silicidable metal film on the N-type semiconductor film. And said N
Forming a silicide film at the interface between the type semiconductor film and the metal film; removing the metal film; forming a pixel electrode connected to the silicide film on the source side; A metal film for forming a drain electrode and a metal film for protection are formed in this order, and by processing these metal films, a drain electrode is formed on the silicide film on the drain side; Leaving a metal film, and forming a source electrode on the source-side silicide film, leaving the protective metal film thereon, and then peeling off the remaining protective metal film. A method of manufacturing a display panel. 9. A step of forming an N-type semiconductor film, a silicide film and a metal film on a drain side and a source side on a semiconductor film, a step of forming a pixel electrode connected to the metal film on the source side, Forming a drain electrode on the drain-side metal film and forming a source electrode covering the entire surface including the periphery of the source-side metal film. 10. A step of forming a gate electrode, a gate insulating film, and a semiconductor film on a substrate in this order, forming a channel protection film at a predetermined position on the semiconductor film, and using the channel protection film as a mask. Implanting N-type ions into the semiconductor film to make the semiconductor film an N-type semiconductor film in a region other than below the channel protective film; and forming a silicidable metal film on the N-type semiconductor film. Forming a silicide film at an interface between the N-type semiconductor film and the metal film, forming a pixel electrode connected to the metal film on the source side, and forming a drain electrode on the metal film on the drain side. Forming a source electrode that covers the entire surface including the periphery of the source-side metal film and
A method for manufacturing a display panel, comprising: 11. A step of forming an N-type semiconductor film, a silicide film, and a metal film on a drain side and a source side on a semiconductor film, forming a pixel electrode connected to the source-side metal film, and forming the pixel electrode Forming a source electrode covering the entire surface including the periphery of the source-side metal film with the same material as above, and forming a drain electrode on the drain-side metal film. Display panel manufacturing method. 12. A step of forming a gate electrode, a gate insulating film, and a semiconductor film on a substrate in this order, forming a channel protection film at a predetermined position on the semiconductor film, and using the channel protection film as a mask. Implanting N-type ions into the semiconductor film to make the semiconductor film an N-type semiconductor film in a region other than below the channel protective film; and forming a silicidable metal film on the N-type semiconductor film. Forming a silicide film at the interface between the N-type semiconductor film and the metal film, forming a pixel electrode connected to the metal film on the source side, and forming the pixel electrode on the source side using the same material as the pixel electrode. A step of forming a source electrode covering the entire surface including the periphery of the metal film, and a step of forming a drain electrode on the drain-side metal film. Production method. 13. A gate electrode, a gate insulating film,
Forming a semiconductor film having a source region and a drain region and a metal film capable of being silicided in this order to form a silicide film at an interface between the source region and the drain region of the semiconductor film and the metal film; Implanting N-type ions into a film and the semiconductor film to make the source region and the drain region of the semiconductor film an N-type semiconductor film; and forming a pixel electrode connected to the metal film on the source region. A method for manufacturing a display panel, comprising: