JPH11354507A - ドライエッチング方法および半導体装置 - Google Patents

ドライエッチング方法および半導体装置

Info

Publication number
JPH11354507A
JPH11354507A JP16020298A JP16020298A JPH11354507A JP H11354507 A JPH11354507 A JP H11354507A JP 16020298 A JP16020298 A JP 16020298A JP 16020298 A JP16020298 A JP 16020298A JP H11354507 A JPH11354507 A JP H11354507A
Authority
JP
Japan
Prior art keywords
gas
dry etching
etching method
etching
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16020298A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11354507A5 (enExample
Inventor
Kazunori Shinoda
和典 篠田
Junji Shigeta
淳二 重田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16020298A priority Critical patent/JPH11354507A/ja
Publication of JPH11354507A publication Critical patent/JPH11354507A/ja
Publication of JPH11354507A5 publication Critical patent/JPH11354507A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP16020298A 1998-06-09 1998-06-09 ドライエッチング方法および半導体装置 Pending JPH11354507A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16020298A JPH11354507A (ja) 1998-06-09 1998-06-09 ドライエッチング方法および半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16020298A JPH11354507A (ja) 1998-06-09 1998-06-09 ドライエッチング方法および半導体装置

Publications (2)

Publication Number Publication Date
JPH11354507A true JPH11354507A (ja) 1999-12-24
JPH11354507A5 JPH11354507A5 (enExample) 2005-10-13

Family

ID=15710007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16020298A Pending JPH11354507A (ja) 1998-06-09 1998-06-09 ドライエッチング方法および半導体装置

Country Status (1)

Country Link
JP (1) JPH11354507A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003527748A (ja) * 2000-03-15 2003-09-16 レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 化学反応を行う方法および装置、並びに該方法および装置を使用した表面処理方法。

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003527748A (ja) * 2000-03-15 2003-09-16 レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 化学反応を行う方法および装置、並びに該方法および装置を使用した表面処理方法。

Similar Documents

Publication Publication Date Title
US6812152B2 (en) Method to obtain contamination free laser mirrors and passivation of these
US6803605B2 (en) Method to GaAs based lasers and a GaAs based laser
US7026182B2 (en) Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
JP2823476B2 (ja) 半導体レーザおよびその製造方法
US5661743A (en) Semiconductor laser
US5737351A (en) Semiconductor laser including ridge structure extending between window regions
US6486068B2 (en) Method for manufacturing group III nitride compound semiconductor laser diodes
EP0612128B1 (en) Semiconductor laser and method of manufacturing the same
JP2000200946A (ja) 半導体装置およびその製造方法
JP2002033305A (ja) 半導体装置の製造方法およびそれを用いて製造した半導体装置
Mawatari et al. Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by RIE and MOVPE
US6576503B2 (en) Laser diodes and manufacturing methods
JPH11354507A (ja) ドライエッチング方法および半導体装置
JP3501676B2 (ja) 半導体レーザ装置の製造方法
Yoshita et al. T-shaped GaAs quantum-wire lasers and the exciton Mott transition
JPH11283959A (ja) 半導体装置の製造方法
JPWO2005031829A1 (ja) 半導体素子および半導体集積素子
JP3196831B2 (ja) 半導体レーザ素子の製造方法
JPH11283968A (ja) ドライエッチング方法および半導体装置
JPH11340194A (ja) ドライエッチング方法および半導体装置
JPH10242563A (ja) 半導体発光素子の製造方法
JPH10256236A (ja) ドライエッチング方法および半導体装置
JP3022351B2 (ja) 光半導体装置及びその製造方法
JPH09153657A (ja) 半導体レーザの製造方法
JP2000133880A (ja) 半導体レーザの製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050602

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050602

RD01 Notification of change of attorney

Effective date: 20050602

Free format text: JAPANESE INTERMEDIATE CODE: A7421

RD01 Notification of change of attorney

Effective date: 20060417

Free format text: JAPANESE INTERMEDIATE CODE: A7421

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070409

A131 Notification of reasons for refusal

Effective date: 20070417

Free format text: JAPANESE INTERMEDIATE CODE: A131

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070911