JPH11354441A5 - - Google Patents

Info

Publication number
JPH11354441A5
JPH11354441A5 JP1998159481A JP15948198A JPH11354441A5 JP H11354441 A5 JPH11354441 A5 JP H11354441A5 JP 1998159481 A JP1998159481 A JP 1998159481A JP 15948198 A JP15948198 A JP 15948198A JP H11354441 A5 JPH11354441 A5 JP H11354441A5
Authority
JP
Japan
Prior art keywords
film
manufacturing
semiconductor device
amorphous
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998159481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11354441A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP15948198A priority Critical patent/JPH11354441A/ja
Priority claimed from JP15948198A external-priority patent/JPH11354441A/ja
Publication of JPH11354441A publication Critical patent/JPH11354441A/ja
Publication of JPH11354441A5 publication Critical patent/JPH11354441A5/ja
Withdrawn legal-status Critical Current

Links

JP15948198A 1998-06-08 1998-06-08 半導体装置の製造方法 Withdrawn JPH11354441A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15948198A JPH11354441A (ja) 1998-06-08 1998-06-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15948198A JPH11354441A (ja) 1998-06-08 1998-06-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11354441A JPH11354441A (ja) 1999-12-24
JPH11354441A5 true JPH11354441A5 (cg-RX-API-DMAC7.html) 2004-09-24

Family

ID=15694722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15948198A Withdrawn JPH11354441A (ja) 1998-06-08 1998-06-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH11354441A (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777274B2 (en) * 2000-01-25 2004-08-17 Samsung Electronics Co., Ltd. Low temperature polycrystalline silicon type thin film transistor and a method of the thin film transistor fabrication
JP4901020B2 (ja) * 2001-05-23 2012-03-21 東芝モバイルディスプレイ株式会社 ポリシリコン薄膜トランジスタの製造方法
JP2005064453A (ja) * 2003-07-29 2005-03-10 Advanced Display Inc 薄膜トランジスタ及びその製造方法
JP4720154B2 (ja) * 2004-11-19 2011-07-13 ウシオ電機株式会社 フラッシュランプ発光装置
JP2007142027A (ja) * 2005-11-16 2007-06-07 Hitachi Displays Ltd 表示装置の製造方法
KR20080111693A (ko) * 2007-06-19 2008-12-24 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
JP6403377B2 (ja) * 2013-11-19 2018-10-10 株式会社ジャパンディスプレイ 多結晶化方法

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