JPH11266069A - Transfer member and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transfer member with which a wiring is prevented from disappearing and peeling off and plating is restrained from penetrating between an insulating mask pattern and a conductive board. SOLUTION: A method of manufacturing a transfer member comprises a first process where the conductive surface of a conductive board 1, which is possessed of, at least one conductive surface is regulated in surface roughness through a wet blast treatment, a second process in which an electrical insulating mask pattern 2 is formed on the surface of the conductive board 1, a third process where at least a single or more layered conductive layer 4 is formed on the non-masked part of the conductive board 1 surface, where the mask pattern 2 is formed, and a fourth process where an adhesive layer 5 is formed on the conductive layer 4, and a patterned transfer layer where at least, the conductive layer 4 and the adhesive layer 5 are laminated is formed on a conductive board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a transfer member having a fine pattern and a method for manufacturing the same. In particular, the present invention relates to a transfer member having a transfer layer formed of a patterned conductive layer or the like formed on a substrate and a method of manufacturing the same, which can be used for manufacturing a multilayer printed wiring board and the like.

[0002]

2. Description of the Related Art Due to the dramatic development of technology in the electric field, high-density mounting techniques such as miniaturization of semiconductor packages and bare chip mounting, as typified by CSP, are rapidly advancing. Along with this, printed wiring boards are also being changed from single-sided wiring to double-sided wiring, and are becoming more multilayered and thinner and lighter.

[0003] As a method of manufacturing such a printed wiring board, a subtractive method and an additive method are generally used.

[0004] The subtractive method is typically a method of forming a conductive circuit by etching a copper clad laminate after forming an etching resist. Although this method is technically almost completed and low in cost, the formation of a fine pattern is limited due to restrictions such as the thickness of the copper foil during etching.

On the other hand, in the additive method, typically, after a catalyst nucleus is provided on a substrate, a plating resist is formed,
This is a method of forming a conductor circuit by performing electroless copper plating. This method can form a fine pattern, but requires cost reduction and further improvement in reliability.

The single-sided or double-sided printed wiring boards produced by these methods are further laminated under pressure together with a prepreg to produce a multilayer substrate. In such a multilayer substrate, the conductor circuits of each layer are usually connected by forming through-holes subjected to electroless plating or the like after the multilayering at once, but the accuracy of the through-holes is further increased. Improvement is required.

In recent years, a multilayer printed wiring board of a build-up type, which is formed by stacking circuit patterns on the surface of a core substrate via an insulating layer, has been attracting attention as satisfying the above requirements. In the multilayer printed wiring board of this build-up system, the wiring density is improved even when the wiring pitch is the same, since the wiring is not hindered by the through holes, as compared with the conventional multilayer substrate using the through holes. However, it is difficult to correct a defect in an intermediate step, and the process is complicated, which hinders a reduction in manufacturing cost.

In order to solve such a problem, there is provided a multilayer printed wiring board having a substrate and a plurality of wiring pattern layers sequentially transferred onto the substrate, wherein each wiring pattern layer comprises a conductive layer and a conductive layer. A device having an insulating resin layer fixed to a lower wiring pattern layer and a method for manufacturing the same have been proposed (Japanese Patent Application Laid-Open No. Hei 8-116172).

FIG. 1 shows a typical example of a method for manufacturing such a transfer member and a printed wiring board. First, a conductive substrate 1 is prepared as shown in FIG. 1A, and a mask pattern 2 is formed on the conductive substrate 1 as shown in FIG. 1B.
Next, patterning is performed as shown in FIG.
Further, as shown in FIG. 1D, a conductive layer 4 is formed on the non-mask portion 3 by electrolytic plating or the like. Further, as shown in FIG. 1E, an adhesive layer 5 is formed on the conductive layer pattern by an electrodeposition method or the like. The transfer member manufactured in this manner is then transferred to the transfer-receiving substrate 6 as shown in FIG. 1 (f), and a printed wiring board as shown in FIG. 1 (g) is manufactured.

However, the transfer member manufactured by such a manufacturing method has a problem that a part or all of the wiring pattern is peeled off or lost during energization or washing due to internal stress of the conductive layer. May occur. In addition, when electrolytic plating is performed on the non-mask portion of the conductive substrate, there is a problem that plating infiltration may occur at the interface between the insulating mask pattern and the conductive substrate, and these improvements have been made. Is desired.

[0011]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for eliminating or exfoliating wiring due to internal stress of metal plating and the like, and an insulating mask. An object of the present invention is to provide a transfer member in which plating does not infiltrate between a pattern and a conductive substrate, and a method for manufacturing the same.

[0012]

Means for Solving the Problems The present inventors have solved the above-mentioned problems by adjusting the surface roughness of a conductive surface of a conductive substrate to a specific range and then manufacturing a transfer member. I found that. That is, the method for producing a transfer member of the present invention uses a wet blast treatment for a conductive substrate having conductivity on at least one surface, the surface roughness of the conductive surface of the conductive substrate. Adjusting, and forming an electrically insulating mask pattern on the surface of the conductive substrate; and forming at least one conductive layer on a non-mask portion of the conductive substrate on the side where the mask pattern is formed. Forming, and a step of forming an adhesive layer on the conductive layer, and on the conductive substrate, patterned at least the conductive layer and the adhesive layer are laminated This is a method for forming a transfer layer.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a transfer member according to the present invention will be described with reference to FIG.

First, a conductive substrate 1 shown in FIG. 2A is prepared, and the roughness of the conductive surface is adjusted.
A surface roughness-adjusting conductive substrate shown in (b) is obtained. This figure 2
In (b), the surface roughness of the lower surface is adjusted.
Next, as shown in FIG. 2C, a mask 2 is formed on the roughness adjusting surface of the conductive substrate 1. Further, as shown in FIG. 2D, a mask pattern 2 and a non-mask portion 3 are formed by performing patterning. Next, as shown in FIG. 2E, a conductive layer 4 is formed on the non-mask portion 3. Further, as shown in FIG. 2F, a transfer member is manufactured by forming an adhesive layer 5 on the pattern of the conductive layer 4.

A typical example of the transfer member of the present invention is shown in FIG.
As schematically shown in (f), an arbitrary mask pattern 2 is formed on the surface of the conductive substrate 1 whose surface roughness is adjusted.
And a transfer layer comprising a conductive layer 4 and an adhesive layer 5 laminated thereon is formed on the non-mask portion 3. Thereafter, the transfer member of the present invention is typically pressed onto the transfer substrate 6 as shown in FIG. 2 (g), and the transfer layer (wiring pattern) including the conductive layer 4 and the adhesive layer 5 is transferred to the transfer substrate. The printed wiring board shown in FIG.

Hereinafter, the method for producing a transfer member of the present invention will be described in more detail.

Adjustment of Surface Roughness of Conductive Substrate The method for adjusting the surface roughness of the conductive substrate used in the transfer member of the present invention uses a wet blast method. Generally, the roughness adjustment method is roughly classified into a chemical method and a physical method. The chemical method is a method of dissolving the substrate surface using an etchant such as ferric chloride or cupric chloride, but the etching rate is locally different due to the presence of rolling streaks, defects, etc. There is a problem that can easily be processed. On the other hand, physical methods include a sand blast method in which silica sand or the like is blown together with air, a wet blast method in which alumina beads, silica beads, or the like are mixed with water and air and blown, and, for example, removal of rolling streaks can be expected. Relatively uniform processing is easily obtained. Among these, the wet blast method is advantageous in that good roughness can be easily obtained, and that both peeling of the wiring and good transferability are satisfied, and that the adhesion between the conductive substrate and the insulating mask pattern is improved. This is a preferred roughness adjustment method in the present invention.

The surface roughness of the conductive substrate used for the transfer member of the present invention is Ra = 0.50 to form a relatively thin (about 0.5 to 5 μm) insulating mask pattern thereon.
It is preferably from 0.01 to 0.3 μm (measured with a stylus type surface roughness meter), and more preferably Ra = 0.01 to 0.1.
5 μm roughness, particularly preferably 0.01 to 0.10 μm
It is preferable that If it is too rough, the adhesion between the conductive substrate and the conductive layer may be too high, and transfer may be difficult. On the other hand, if it is too coarse, it may be difficult to apply a thin mask pattern. Furthermore, if the conductive substrate is rough, a conductive layer with a rough surface reflecting its surface shape appears, so that when a metal having connectivity such as gold is used for the conductive layer, wire bonding properties may be affected. .

The material of the conductive substrate used in the transfer member of the conductive substrate present invention,
There is no particular limitation as long as at least one surface has conductivity. As such,
For example, various metal plates and various insulators coated with metal, such as copper, nickel, stainless steel, iron, aluminum, 42 alloy, and resin films metallized with sputtering or the like can be used. Preferably, copper, nickel, chromium,
A material capable of depositing gold, silver, platinum, tin, solder, and the like and capable of separating the deposited metal layer from the conductive substrate, specifically, for example, stainless steel, a titanium-based material, or the like is preferable.

The thickness of the conductive substrate used for the transfer member of the present invention is not particularly limited, but may be 0.05 to 1.0 mm.
The degree is generally preferred.

Formation of Mask Pattern The method and material for forming an electrically insulating mask pattern used in the transfer member of the present invention are not particularly limited as long as the insulating layer can be patterned. This method includes, for example, photoresist, screen printing, and precision dispensing. this house,
It is preferable to use a photoresist that is advantageous for forming a fine pattern. Further, since acid resistance, solvent resistance, voltage resistance, and the like may be required in a later step, it is more preferable to use one having such characteristics.
Particularly preferred specific examples include a cyclized rubber-based photoresist, a thermosetting acrylic-based resist, a melamine-based resist, and a water-soluble colloid-based photoresist.

The electrically insulating mask pattern used for the transfer member of the present invention is typically formed as follows. A mask is formed by a known method on the surface of the conductive substrate whose roughness has been adjusted. Next, the mask pattern is irradiated with ultraviolet rays through a photomask of a predetermined pattern, and is exposed and developed. Thus, a mask pattern of a predetermined pattern and a non-mask portion are formed on the surface of the conductive substrate.

Formation of Conductive Layer The method and material for forming the conductive layer used in the transfer member of the present invention are not limited as long as they can be used for ordinary wiring boards. A typical example is a method in which a conductive layer is formed on a non-mask portion by an electrodeposition method. The formation of the conductive layer by the electrodeposition method can be performed according to a known plating method. The material for forming the conductive layer is preferably a material on which a conductive thin film is formed by an electrodeposition method.
Silver, gold, palladium, nickel, chromium, zinc, tin, platinum and the like can be mentioned.

Preferably, a barrier conductive layer described later is provided between the conductive layer and the adhesive layer in order to prevent ion migration, which is a phenomenon in which metal ions such as copper are eluted into the adhesive layer. Can be.

Formation of Adhesive Layer The adhesive layer used in the transfer member of the present invention can be typically formed on the surface of the conductive layer by an electrodeposition method. The electrodeposition method is conventionally used as, for example, electrodeposition coating, and can be performed using an ionic electrodeposition liquid containing a film-forming material. Electrodeposition in the present invention can be performed according to a known electrodeposition method.

The material of the adhesive layer used for the transfer member of the present invention exhibits adhesive properties at room temperature or by heating. The transfer member is pressed against the substrate to be transferred, and the conductive layer is adhered. There is no particular limitation as long as it can be fixed to the substrate to be transferred by the attachment layer. Preferably, the adhesive layer is made of an insulator in order to provide insulation between the wirings and between the wirings to be transferred and the wirings after the transfer. It is also preferable to use a substance that can be contained in the electrodeposition solution and electrodeposited, for example, an ionic polymer compound.

Preferred ionic polymer compounds for forming the insulating adhesive layer contained in the electrodeposition solution include, for example,
Examples include natural resins, acrylic resins, polyester resins, alkyd resins, maleated oil resins, polybutadiene resins, epoxy resins, polyamide resins, and polyimide resins. As the anionic polymer compound, those having an anionic group such as a carboxyl group,
Examples of the cationic polymer compound include those having a cationic group such as an amino group. In the present invention, an optimal ionic polymer compound can be appropriately selected according to the performance required for the adhesive layer. In addition, if necessary, a rosin-based compound,
A terpene-based or petroleum resin-based tackifier can be used.

The above-mentioned polymer compound can be electrodeposited in a state of being neutralized by an alkaline substance or an acidic substance and solubilized in water, or in a state of being dispersed in water. The anionic polymer compound can be neutralized with, for example, amines such as trimethylamine, diethylamine and dimethylethanolamine, and inorganic alkalis such as ammonia and potassium hydroxide. The cationic polymer compound can be neutralized with, for example, an acid such as acetic acid, formic acid, propionic acid, and lactic acid.

The thickness of the pressure-sensitive adhesive layer is not particularly limited as long as the pressure-sensitive adhesive property and the required insulating property are satisfied, but it is generally 1 to 100 μm, preferably 10 to 100 μm.
５０50 μm.

When copper or the like is used for the conductive layer in the transfer member for forming the barrier conductive layer, a phenomenon in which metal ions such as copper are eluted into the insulating resin, so-called ion migration, generally occurs, resulting in high humidity. If the insulating resin layer is relatively thin, such as about 10 μm, in the environment, there is a possibility that the insulating property is adversely affected. In the transfer member of the present invention, preferably, a barrier conductive layer for preventing such ion migration can be provided between the conductive layer and the adhesive layer. As a material for forming this layer, preferably, a metal having a stable oxide film and hardly causing ion migration, specifically, nickel, chromium, a tin-nickel alloy, or the like can be used. The thickness of the barrier conductive layer is not particularly limited, but is preferably about 0.5 to 1.0 μm. The method for forming this layer is not particularly limited, but preferably, an electrodeposition method, an electroless plating method, an evaporation method, a sputtering method, or the like can be used, and the electrodeposition method is particularly preferable. The barrier conductive layer also has an effect of improving the adhesion between the conductive layer and the adhesive layer.

When nickel plating is used as the barrier conductive layer, since the internal stress of nickel plating is generally larger than that of copper plating, part or all of the wiring pattern is peeled off or disappears during the above-mentioned energization or washing with water. May be more likely to occur. Therefore,
In this case, the present invention is particularly effective in solving the above problem more effectively.

[0032]

EXAMPLE 1 A transfer member was manufactured by the following steps using a thin plate of stainless steel (SUS304CSP (H)) (thickness 0.1 mm, Ra = 0.112) as a conductive substrate. (1) Adjustment of Surface Roughness After the conductive substrate was immersed in an alkaline degreasing bath (Malclean SP 30 g / l, manufactured by Nippon Marcel Co., Ltd.) for 10 minutes, the surface was sufficiently washed with water and dried. Both surfaces of the degreased conductive substrate were blasted with a wet blasting apparatus (wet blasting cell, manufactured by Macho Co., Ltd.) under the following conditions, washed sufficiently with water and dried. The surface roughness after the blast treatment was Ra = 0.151.

Wet blasting treatment conditions Abrasive material used Alumina beads # 1000 Abrasive material concentration 20% Pump pressure 0.7 kg / mm ² Air pressure 1.0 kg / cm ² Processing speed 15 mm / sec Projection distance 20 mm Projection angle 90 ° (2) Formation of a mask pattern On the conductive substrate of which surface roughness has been adjusted, a cyclized rubber negative photoresist (OMR85, manufactured by Tokyo Ohka Kogyo Co., Ltd.)
35 cP) was applied to a thickness of about 2 μm, and prebaked in a clean oven at 85 ° C. for 30 minutes. afterwards,
Using a photomask having a predetermined pattern, exposure is performed under the following conditions, and a developing solution (OMR, manufactured by Tokyo Ohka Kogyo Co., Ltd.)
Developing solution) and rinse solution (manufactured by Tokyo Ohka Kogyo Co., Ltd.
(OMR rinse solution). Then 145 ° C
Was performed in a clean oven for 30 minutes to form a mask pattern.

Exposure conditions Contact exposure machine P-202-G manufactured by Dainippon Screen Mfg. Co., Ltd. Vacuum evacuation 30 seconds Exposure time 30 counts (3) Formation of conductive layer The conductive substrate on which the above mask pattern is formed is phosphorus-containing. It was immersed in a copper sulfate plating bath having the following composition in opposition to the copper anode.
A current was passed at a current density of dm ² for 25 minutes. As a result, a 10 μm-thick conductive layer made of copper plating was formed on the non-mask portion of the conductive substrate. It should be noted that copper plating did not penetrate between the insulating mask pattern and the conductive substrate.

Composition of copper sulfate plating bath (bath temperature 25 ° C.) CuSO ₄ .5H ₂ O 75 g / l H ₂ SO ₄ 180 g / l HCl 0.15 ml / l (60 ppm as Cl ⁻ ) Cu-Board HA MU 10 ml / l (manufactured by Ebara Uzilite Co., Ltd.) Then, after sufficient washing, the conductive substrate was immersed in a Watt nickel plating bath having the following composition facing the electrolytic nickel anode, and the conductive substrate was used as a cathode. A current was supplied for 5 minutes at a current density of 1 A / dm ² by a constant current power supply. As a result, a barrier conductive layer made of nickel plating having a thickness of 1 μm was formed on the copper plating layer of the conductive substrate. The peeling of the conductive layer due to the internal stress of the metal plating did not occur at all. Composition of Watt nickel plating bath (bath temperature 50 ° C., pH 4.0) NiSO ₄ .6H ₂ O 300 g / l NiCl ₂ .6H ₂ O 50 g / l H ₃ BO ₃ 40 g / l (4) Formation of adhesive layer (Preparation of anionic electrodeposition solution) (i) Production of polyimide varnish Cooling with beads on a 1-liter three-neck separable flask on a trap with a stainless steel squirrel stirrer, nitrogen introduction tube and stopcock A reflux condenser fitted with a tube was attached. The separable flask was immersed and heated in a silicone bath equipped with a temperature controller while flowing a nitrogen stream. The reaction temperature was indicated by bath temperature.

3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride (hereinafter referred to as BTDA) 32.2.
2 g (0.1 mol), bis (4- (3-aminophenoxy) phenyl) sulfone (m-BAPS) 21.63 g
(0.1 mol), 1.5 g of valerolactone (0.015
Mol), 2.4 g (0.03 mol) of pyridine, 200 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 30 g of toluene. 18
The reaction was carried out at 0 ° C. for 1 hour with stirring at 200 rpm. Remove 15 ml of toluene-water distillate, air-cool,
6.11 g (0.05 mol) of BTDA, 15.216 g (0.1%) of 3,5 diaminobenzoic acid (hereinafter referred to as DABz).
1 mol), 119 g of NMP and 30 g of toluene,
After stirring at room temperature for 30 minutes (200 rpm), then
The temperature was raised to 80 ° C and the mixture was heated and stirred, and the toluene-water distillate was 15m.
l was removed. Thereafter, while removing the toluene-water distillate outside the system, the mixture was heated to 180 ° C. and stirred for 3 hours to terminate the reaction. A polyimide varnish of 20% was obtained. Acid equivalent (1
The polymer amount per COOH was 1554) was 70. (Ii) Preparation of electrodeposition solution 3SN (NM) was added to 100 g of a 20% concentration polyimide varnish.
P: tetrahydrothiophene-1,1-dioxide =
1: 3 (weight) mixed solution) 150 g, benzyl alcohol 75 g, methylmorpholine 5.0 g (neutralization ratio 200
%) And 30 g of water were added and stirred to prepare an aqueous electrodeposition solution.
The obtained aqueous electrodeposition solution had a polyimide content of 7.4% and a pH of 7.4.
8. It was a dark reddish brown transparent liquid.

(Electrodeposition) The conductive substrate having the conductive pattern was immersed in the above-mentioned anionic insulating electrodeposition solution facing a stainless steel cathode (SUS430MA), and the conductive substrate was used as an anode. It was energized by a DC power supply at a voltage of 100 V for 3 minutes. After washing with water, it was dried on a hot plate at 80 ° C. for 3 minutes. As a result, a 10 μm-thick electrodeposition coating film of the above polyimide was formed on the barrier conductive layer of the conductive substrate, and the transfer member of the present invention was obtained. (5) Transfer The transfer member obtained in the above process is pressed on a stainless steel foil (SUS304TA) having a thickness of 25 μm at a temperature of 160 ° C. and a pressure of 1 kgf / cm ² to peel off the conductive substrate. When the transfer was performed, all the patterns were transferred. Therefore, it was confirmed that the pattern transferability was maintained even when the surface roughness of the conductive substrate was adjusted to increase the adhesion between the conductive layer and the conductive substrate.

Example 2 A thin plate of stainless steel (SUS430MA) (thickness 0.1
(5 mm, Ra = 0.019) was used as a conductive substrate to prepare a transfer member by the following steps.

(1) Adjustment of Surface Roughness After the conductive substrate was immersed in an alkaline degreasing bath (Malclean SP 30 g / l, manufactured by Nippon Marcel Co., Ltd.) for 10 minutes, the surface was sufficiently washed with water and dried. I let it. Both surfaces of the degreasing conductive substrate were blasted under the following conditions using a wet blasting device (wet blasting cell manufactured by Macho Co., Ltd.), washed sufficiently with water, and dried. The surface roughness after the blast treatment was Ra = 0.42. Wet blasting conditions Abrasive material Spherical silica abrasive Particle size less than about 20 μm Abrasive material concentration 21% Pump pressure 0.6 kg / mm ² Air pressure 1.0 kg / cm ² Processing speed 12 mm / sec Projection distance 20 mm Projection angle 90 °

(2) Formation of a mask pattern On the conductive substrate whose surface roughness has been adjusted, a cyclized rubber negative photoresist (OMR85, manufactured by Tokyo Ohka Kogyo Co., Ltd.)
36cP) was applied to a thickness of about 2 μm, and prebaked in a clean oven at 85 ° C. for 30 minutes. Then, using a photomask having a predetermined pattern, exposure is performed under the following conditions, and a developer (manufactured by Tokyo Ohka Kogyo Co., Ltd.
(OMR developer) and rinsed with a rinse (OMR rinse, manufactured by Tokyo Ohka Kogyo Co., Ltd.).
Next, post-baking was performed in a clean oven at 145 ° C. for 30 minutes to form a mask pattern. Exposure conditions Contact exposure machine Dainippon Screen Mfg. Co., Ltd. P-202-G Vacuum evacuation 30 seconds Exposure time 30 count

(3) Formation of Conductive Layer The conductive substrate having the above-described mask pattern formed thereon is immersed in a copper sulfate plating bath having the following composition in opposition to the phosphorus-containing anode.
Using the conductive substrate as a cathode, 2 A / dm
The current was passed at a current density of ² for 25 minutes. As a result, a conductive layer made of copper plating having a thickness of 10 μm was formed on the non-mask portion of the conductive substrate. In addition, copper plating did not penetrate between the insulating mask pattern and the conductive substrate. Composition of copper sulfate plating bath (bath temperature 25 ° C.) CuSO ₄ .5H ₂ O 75 g / l H ₂ SO ₄ 180 g / l HCl 0.15 ml / l (60 ppm as Cl ⁻ ) Cu-Board HA MU 10 ml / l (EBARA (Eugerite Co., Ltd.)

Next, after sufficient washing with water, the conductive substrate was immersed in a nickel plating bath having the following composition, facing the electrolytic nickel anode, and the conductive substrate was used as a cathode at a current of 1 A / dm. The current was passed at a current density of ² for 5 minutes. As a result, a barrier conductive layer made of nickel plating having a thickness of 1 μm was formed on the copper plating layer of the conductive substrate. The conductive layer did not peel off due to the internal stress of the metal plating. Composition of Watt nickel plating bath (bath temperature 50 ° C., pH 4.0) NiSO ₄ .6H ₂ O 300 g / l NiCl ₂ .6H ₂ O 50 g / l H ₃ BO ₃ 40 g / l

(4) Formation of Adhesive Layer (Preparation of Anionic Electrodeposit) An electrodeposit was prepared in the same manner as in Example 1. (Electrodeposition) The conductive substrate having the conductive pattern was immersed in the above-described anionic insulating electrodeposition solution facing a stainless steel cathode (SUS430MA), and the conductive substrate was used as an anode and 100 V was supplied by a DC power supply. For 3 minutes. After washing with water, it was dried on a hot plate at 80 ° C. for 3 minutes. As a result, a thickness of 1 on the barrier conductive layer of the conductive substrate.
A 0 μm electrodeposition coating film made of the polyimide is formed,
The transfer member of the present invention was obtained. (5) Transfer The transfer member obtained in the above process is pressed on a stainless steel foil (SUS304TA) having a thickness of 25 μm at a temperature of 160 ° C. and a pressure of 1 kgf / cm ² to peel off the conductive substrate. When the transfer was performed, all the patterns were transferred. Therefore, it was confirmed that the pattern transferability was maintained even when the surface roughness of the conductive substrate was adjusted to increase the adhesion between the conductive layer and the conductive substrate.

Comparative Example 1 A transfer member was prepared in the same manner as in Example 1 except that the surface roughness was not adjusted by a wet blasting device in the step (1), but after the watt nickel plating in the step (3). The conductive layer formed on the non-mask portion of the conductive substrate disappeared and peeled off, and a good transfer member could not be obtained.

COMPARATIVE EXAMPLE 2 In step (1), the surface roughness was not adjusted by a wet blasting apparatus, and in step (2), a negative photoresist (FR14 manufactured by Fuji Pharmaceutical Co., Ltd., FR14) was used. A transfer member was prepared in the same manner as in Example 1 except that rinsing was performed by immersion in pure water. However, after the copper sulfate plating in the step (3), the copper plating was performed between the conductive substrate and the insulating mask pattern. And a good transfer member could not be obtained.

Comparative Example 3 A transfer member was prepared in the same manner as in Example 1 except that in the step (1), a treatment was carried out by a sand blasting device under the following conditions (Ra of the conductive substrate after treatment = 0.175). ,
When the transfer in the step (5) was performed, only a part of the pattern was transferred, and a good transfer member was not obtained. Sandblasting conditions Abrasive material used Alumina # 240 Air pressure 1.2 kg / cm ² Processing speed 50 mm / sec Projection distance 100 mm Projection angle 90 °

Comparative Example 4 A transfer member was prepared in the same manner as in Example 1 except that in the step (1), the treatment was carried out by a sandblasting device under the following conditions (Ra of the treated conductive substrate = 0.227). ,
When the transfer in the step (5) was performed, no pattern was transferred at all, and a good transfer member was not obtained. Sandblasting conditions Abrasive material used Alumina # 240 Air pressure 3.0 kg / cm ² Processing speed 50 mm / sec Projection distance 100 mm Projection angle 90 °

[0048]

According to the present invention described above, the surface roughness of the conductive substrate is adjusted before the formation of the insulating mask pattern, so that the conductive layer formed on the non-mask portion on the conductive substrate is formed. It is possible to obtain a transfer member capable of improving both the adhesiveness between the conductive substrate and the conductive substrate and the adhesiveness between the conductive substrate and the mask pattern and transferring the image. As a result, it is possible to simultaneously solve the two problems of the disappearance and peeling of the wiring due to the internal stress of the metal plating and the prevention of the penetration of the plating between the insulating mask pattern and the conductive substrate, thereby reducing the production yield of the transfer member. improves.

[Brief description of the drawings]

FIG. 1 is a schematic explanatory view of a conventional method for manufacturing a transfer member.

FIG. 2 is a schematic explanatory view showing one example of a method for manufacturing a transfer member of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Conductive substrate 2 Mask pattern 3 Non-mask part 4 Conductive layer 5 Adhesive layer 6 Transfer receiving substrate

Claims (7)

[Claims] 1. A step of adjusting the surface roughness of the conductive surface of the conductive substrate by using a wet blast process with respect to the conductive substrate having conductivity on at least one side surface; Forming an electrically insulating mask pattern on the surface of the conductive substrate; forming at least one conductive layer on a non-mask portion of the conductive substrate on the side where the mask pattern is formed; Forming an adhesive layer on the conductive substrate, forming a patterned transfer layer formed by laminating at least the conductive layer and the adhesive layer on the conductive substrate. A method for producing a transfer member, which is characterized by the following. 2. The method according to claim 1, wherein the adjustment of the surface roughness is performed by adjusting a center line average roughness (R).
The method according to claim 1, wherein a) is adjusted to 0.01 to 0.3 µm. 3. The method according to claim 1, wherein the formation of the mask pattern is performed using a photoresist. 4. The formation of the conductive layer and the formation of the adhesive layer
The method according to claim 1, wherein the method is performed using an electrodeposition method. 5. The conductive substrate is made of stainless steel,
The center line average roughness (Ra) of the surface of the conductive substrate is 0.
0.01 to 0.15 μm, and 0.00 to the center line average roughness (Ra) of the conductive substrate before roughness adjustment.
The method according to any one of claims 1 to 4, which is 1 to 0.05 µm larger. 6. A transfer member produced by using the method according to claim 1. Description: 7. A printed wiring board produced by using the method according to claim 1. Description: