JPH11265958A - Formation of semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the defective adhesion and peeling between the respective surfaces and the bonding layers of a ceramics substrate and a resin wiring substrate and to improve the yield rate. SOLUTION: In a semiconductor package, wherein a resin wiring substrate 30 is laminated on a ceramics substrate 10 through a bonding layer and a compound ceramics/resin substrate is utilized, surface activating process is performed on the surface of the ceramics substrate 10 and the surface of the resin wiring substrate 30. The surface activating process is performed by etching such as reactive sputter etching. The surface activating process is performed by the plasma using the gas such as SF6 gas and CF4 gas. For the formation of the plasma, microwaves, helicon waves and the like are used. Furthermore, in the surface activating process, the substrate temperature is adjusted in the range of -40 deg.-250 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for forming a semiconductor package. In particular, the present invention provides a semiconductor package in which a resin wiring substrate is bonded to a ceramic substrate with an adhesive layer interposed therebetween, and terminals between the ceramic substrate and the resin wiring substrate are electrically connected to each other via a protruding electrode. It relates to a forming method. Further, the present invention relates to a semiconductor device in which a semiconductor element is mounted on such a semiconductor package.

[0002]

2. Description of the Related Art A semiconductor package using a ceramic / resin composite substrate has been developed as a semiconductor package having high heat dissipation and suitable for increasing the number of terminals. In this type of semiconductor package, a ceramic substrate and a resin wiring substrate are bonded to each other, and the terminals of the ceramic substrate and the terminals of the resin wiring substrate are electrically connected.

The ceramic substrate is formed by degrease and firing a ceramic green sheet having terminals formed on the surface. In the resin wiring board, terminals are formed on the surface of the resin film that is bonded to the ceramic substrate, and wiring is formed on the other surface of the resin film.

[0004] An adhesive layer is used for bonding between the ceramic substrate and the resin wiring substrate. The adhesive layer is formed between the ceramic substrate and the resin wiring substrate by a method such as coating or lamination, and then mechanically joined between the ceramic substrate and the resin wiring substrate by a thermocompression bonding process. The thermocompression process is about 0.2M from the direction perpendicular to the bonding surface
Heating is performed at a temperature of about 250 ° C while applying pressure at a pressure of Pa-15MPa to ensure a perfect adhesion state.

[0005] Protruding electrodes are used for electrical connection between the terminals of the ceramic substrate and the terminals of the resin wiring substrate.
A conductive paste, solder, or the like is used for the protruding electrodes.

[0006]

However, in the semiconductor package using the above-mentioned ceramic / resin composite substrate, no consideration is given to the following points.

During the manufacture of a semiconductor package, a contaminant such as an organic substance or an inorganic substance adheres to the surface of the ceramic substrate and the surface of the resin wiring board, respectively, and a bonding layer for absorbing the contaminant is formed. These sources of contamination, the bonding layer,
In both cases, bubbles and blisters are generated at the interface between the ceramic substrate surface and the adhesive layer and the interface between the resin wiring substrate and the adhesive layer by heating in the thermocompression bonding process. For this reason, peeling or poor adhesion occurs at the interface, and the production yield of the semiconductor package decreases.

The above-mentioned peeling and poor adhesion at the interface also cause poor electrical connection between the terminals of the ceramic substrate and the terminals of the resin wiring substrate, and the production yield of the semiconductor device similarly decreases. I do.

In the thermocompression bonding process, a certain amount of adhesive strength can be obtained by increasing both the pressing force and the heating temperature.
Conversely, an increase in the pressing force and the heating temperature causes cracking of the ceramic substrate and deformation, cracking or deterioration of the resin wiring substrate.

The present invention has been made to solve the above problems. Accordingly, an object of the present invention is to provide a method of forming a semiconductor package which can prevent peeling or poor adhesion between a ceramic substrate and an adhesive layer and between a resin wiring substrate and an adhesive layer, and can improve the production yield. That is.

It is a further object of the present invention to provide a method of forming a semiconductor package capable of preventing cracking of a ceramic substrate, deformation of a resin wiring substrate, and the like, and improving the production yield.

It is a further object of the present invention to provide a method of forming a semiconductor device capable of preventing poor conduction between terminals of a ceramic substrate and terminals of a resin wiring substrate and improving the production yield.

[0013]

In order to solve the above-mentioned problems, the present invention relates to a method of forming a semiconductor package, comprising the steps of forming a ceramic substrate and a resin wiring substrate each having terminals disposed on the surface thereof; A step of performing a surface activation treatment on the surface of the substrate and the surface of the resin wiring substrate, and bonding the surface of the resin wiring substrate with an adhesive layer interposed between the ceramic substrate surface and the terminal between the ceramic substrate terminal and the resin wiring substrate terminal. And electrically connecting them via a protruding electrode.

The surface activation treatment includes SF ₆ gas, CF ₄ gas, O ₂
This is performed by plasma using at least one of gas, CHF ₃ gas, HF gas, a mixed gas of Ar and H ₂ , BCl ₃ gas, and HBr gas. At least one of microwave, high frequency, helicon wave, and inductive coupling is used in combination for plasma generation. Furthermore, the surface activation treatment is -4
It is preferable that the heating is performed within a substrate temperature range of 0 ° C. to 250 ° C.

A semiconductor element (semiconductor chip) is mounted on the semiconductor package by a wire bonding method or a flip chip method, and a semiconductor device is assembled. This semiconductor device is preferably formed in a BGA (Ball Grid Array) structure in which terminals on the back surface of the ceramic substrate of the semiconductor package and external devices are electrically and mechanically connected by solder balls.

In such a method of forming a semiconductor package, a contamination source such as an organic substance and an inorganic substance adhered to each of the surface of the ceramic substrate and the surface of the resin wiring substrate and a bonding layer with the contamination source are removed by a surface activation treatment. Further, the surface activation treatment is performed on the surface of the ceramic substrate and the surface of the resin wiring substrate to perform surface modification for increasing the adhesiveness. As a result of removing the contamination source and the bonding layer, no bubbles and blisters are generated at the interface between the ceramic substrate surface and the adhesive layer and the interface between the resin wiring substrate surface and the adhesive layer. Poor adhesion and peeling from the resin wiring board can be prevented. When the surface modification is performed on each of the ceramic substrate and the resin wiring substrate, further prevention of poor adhesion and peeling can be expected. Therefore, the yield can be improved in the production of a semiconductor package.

Furthermore, as a result of the improvement in the adhesive strength at the interface, the heating temperature in the thermocompression bonding process can be set low and the pressing force can be set small. In addition, the surface activation treatment is performed at a relatively low temperature by using plasma generated by using microwaves or the like. Therefore, cracks caused by cracking of the ceramic substrate, decomposition of the resin wiring board, etc.
Deformation (warpage), cracks, deterioration and the like can be prevented. From this point of view, the yield can be improved in the production of the semiconductor package, and the removal rate of the contamination source and the bonding layer can be increased by appropriately adjusting the substrate temperature during the surface activation treatment.

Furthermore, the yield can be improved in the manufacture of a semiconductor device in which a semiconductor element is mounted on a semiconductor package.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) An embodiment of the present invention will be described below with reference to the drawings. FIG.
FIG. 1 is a sectional view showing a main part of a semiconductor device in which a semiconductor element is mounted on a semiconductor package according to a first embodiment of the present invention. As shown in FIG. 1, a semiconductor device 1 is made of a ceramic material.
It is formed by mounting the semiconductor element 50 on a semiconductor package using a resin composite substrate.

The semiconductor package is a ceramic substrate 10
1 (an upper surface in FIG. 1) with an adhesive layer 20 interposed therebetween and a resin wiring substrate 30 bonded thereto. The terminals 13 formed on the surface of the ceramic substrate 10 and the terminals 31 formed on the surface of the resin wiring substrate 30 are electrically connected via a bump electrode (bump electrode) 40.

The ceramic substrate 10 includes a substrate body 11, connection hole wiring (via hole type internal wiring) 12, terminals (lands) 13, 14, and internal wiring 15. Substrate body 1
1 is formed of an aluminum nitride substrate. The substrate body 11 according to the present embodiment is formed by laminating a plurality of ceramic green sheets having a thickness of, for example, 0.5 to 0.8 mm, and degreased and fired in an atmosphere corresponding to the ceramic green sheets. When the wiring layer is not formed inside the substrate main body 11, the substrate main body 11 is formed of one ceramic green sheet. The connection hole wiring 12 is embedded in a connection hole (through hole) formed in the substrate body 11 in the thickness direction of the substrate. Connection hole wiring 12
Is formed of a high melting point metal, for example, either a W paste or a Mo paste high melting point metal paste, and this high melting point metal paste is formed by screen printing. The screen printed high melting point metal paste is simultaneously degreased and fired when the ceramic green sheet is degreased and fired.

The terminal 13 is provided on the upper surface of the substrate body 11 in the figure, and is used as an internal terminal of the semiconductor package. The terminal 13 is electrically connected to the connection hole wiring 12. The terminal 13 is formed of a high melting point metal paste (either W paste or Mo paste), like the connection hole wiring 12, and the high melting point metal paste is formed by screen printing and then degreased and fired simultaneously with the ceramic green sheet. . Although not shown, a plating layer is formed on the surface of the terminal 13 as necessary. In the present embodiment, the plating layer has a two-layer structure in which an Au plating layer is formed on a Ni plating layer.

The terminals 14 are provided on the lower surface of the substrate main body 11 and are used as external terminals for connecting the semiconductor package to a wiring board such as a motherboard or a daughter board. The terminal 14 is electrically connected to the connection hole wiring 12,
Like the terminal 13, it is formed of a high melting point metal paste.

The internal wiring 15 is formed inside the substrate main body 11. The internal wiring 15 is electrically connected to the connection hole wiring 12, and is formed of a high melting point metal paste similarly to the terminal 13.

The substrate body 1 of the ceramic substrate 10
1 is not limited to an aluminum nitride substrate, and any one of an alumina substrate, a silicon nitride substrate, and a low-temperature sintered glass ceramic substrate can be used.

The adhesive layer 20 performs mechanical bonding between the ceramic substrate 10 and the resin wiring substrate 30. Adhesive layer 20
In this embodiment, an epoxy resin sheet (film) or an epoxy resin paste is used. Epoxy resin sheet or epoxy resin paste is 100-
It is formed with a thickness of 120 μm. In addition, the adhesive layer 20 includes
In addition to these, any of a thermosetting resin sheet, a thermosetting resin paste, an anisotropic conductive sheet, an anisotropic conductive paste, and a polyimide resin paste can be practically used.

The resin wiring substrate 30 includes a substrate main body 33, connection hole wirings 32, terminals 31, and wirings. Substrate body 3
3 is formed of a liquid crystal polymer sheet in the present embodiment. The liquid crystal polymer sheet is formed with a thickness of, for example, 50 to 60 μm. The substrate body 33 is not limited to a liquid crystal polymer sheet, and any one of a polyimide resin sheet and a glass epoxy sheet can be used practically. The connection hole wiring 32 is embedded in a connection hole formed in the substrate body 33 in the thickness direction of the substrate. The connection hole wiring 32 is formed of, for example, Ag paste.

The terminal 31 is provided on the lower surface of the substrate main body 33 in the figure, and is used as an internal terminal of the semiconductor package. The terminal 31 is electrically connected to the connection hole wiring 32. The terminal 31 is formed of Cu foil in the present embodiment, and the Cu foil is formed with a thickness of, for example, 40 to 70 μm. Although not shown, a ceramic substrate 1 is provided on the surface of the terminal 31.
A plating layer equivalent to the plating layer formed on the 0 terminal 13 is formed.

The wiring 34 is formed on the upper surface of the substrate body 33. One end of the wiring 34 is electrically connected to the connection hole wiring 32, and the other end of the wiring 34 is electrically connected to a terminal (bonding pad) 51 of the semiconductor element 50. The wiring 34 is formed of, for example, Cu foil similarly to the terminal 31.

The semiconductor element 50 is mounted on the surface of the central portion of the resin wiring board 30. The semiconductor element 50 and the resin wiring board 30 are mechanically joined by an adhesive layer 53. When a specific potential is applied to the back surface of the semiconductor element 50, the wiring 34 is extended to the mounting region of the semiconductor element 50, and a conductive layer is formed between the back surface of the semiconductor element 50 and the wiring 34. 53 electrically and mechanically connect. The terminals 51 of the semiconductor element 50 and the wirings 34 of the resin wiring board 30 are electrically connected by bonding wires 52. That is, the semiconductor device 1 according to the present embodiment employs a wire bonding method. A protective layer 54 is provided on the surface of the semiconductor element 50 which is to be the circuit mounting surface
Is formed. For the protective layer 54, for example, a polyimide resin is used.

In the present embodiment, the bump electrode 40 is formed of an epoxy-based conductive paste containing an Ag filler.

Next, a method for forming the semiconductor package and a method for forming the semiconductor device 1 will be described with reference to FIGS.
It is explained using.

(1) First, as shown in FIGS. 2A and 2B, a ceramic substrate 10 is formed. In forming the ceramic substrate 10, a ceramic green sheet 11a made of, for example, an aluminum nitride sheet is prepared, and a connection hole is formed in the ceramic green sheet 11a. As shown in FIG. 2A, a high-melting metal paste 12a is filled in the connection holes, and the terminals 13, 14 and the internal wiring 15 are formed on the surface of the ceramic green sheet 11a.
Each of 14a and 15a is formed. For example, a W paste is used for the high melting point metal pastes 12a, 13a, 14a, and 15a, and the W paste is formed by screen printing.

(2) As shown in FIG. 2B, the ceramic green sheet 11a is degreased and fired to form the substrate body 11. At the same time as the degreasing and firing, the high melting point metal pastes 12a, 13a, 14a and 15a are respectively degreased and fired, and the connection hole wiring 12, the terminals 13, 1
4 and the internal wiring 15 are formed. Terminal 1 as required
A plating layer is formed on each of the surfaces 3 and 14. By performing these series of steps, the ceramic substrate 10
Is completed.

(3) On the other hand, as shown in FIGS. 3A to 3D, a resin wiring substrate 30 is formed. When the resin wiring board 30 is formed, the Cu foil 31a is prepared, and FIG.
As shown in (A), a protruding conductive material 32a is formed on the surface of the Cu foil 31a in the region where the connection hole wiring 32 is formed. An Ag paste formed by, for example, screen printing is used for the protruding conductive material 32a, and the Ag paste is formed to have a height of, for example, 80 μm. Projecting conductive material 32a
In order to penetrate the resin sheet (resin film) serving as the substrate body 33, the tip is formed in any one of a conical shape, a pyramid shape, and a mixed shape such as a mixture of a cone and a pyramid. The shape other than the tip of the protruding conductive material 32a is formed by any of a continuation of the tip shape, a columnar shape, a prismatic shape, or a mixed shape such as a mixture of a cylinder and a prism.

(4) As shown in FIG. 3B, the Cu foil 31a
The substrate body 33 and the Cu foil 34a are overlaid on the surface on which the protruding conductive material 32a is formed. Then, as shown in FIG. 3C, thermocompression bonding is performed so that the protruding conductive material 32a breaks through the substrate body 33 and is electrically connected to the Cu foil 34a. Thermocompression treatment is Cu foil 3
This is performed under the condition that both the adhesion strength between the substrate 1a and the substrate body 33 and the adhesion strength between the Cu foil 34a and the substrate body 33 are maintained. By this thermocompression bonding, the protruding conductive material 32 is formed.
a is crushed to form a connection hole wiring 32 for electrically connecting the Cu foil 31a and the Cu foil 34a.

(5) As shown in FIG.
a, each of the Cu foils 34a is patterned and Cu foil 3
1a, at least the terminals 13 of the ceramic substrate 10
A terminal 31 is formed for connection with the wiring, and a wiring 34 is formed by the Cu foil 34a. For patterning, a photolithography technique for forming a mask and an etching technique are used. By forming each of the terminal 31 and the wiring 34, the resin wiring substrate 30 is completed.

(6) As shown in FIG. 3E, the protruding electrodes 40 are formed on the terminals 31 of the resin wiring board 30. As described above, the bump electrode 40 is formed of, for example, an epoxy-based conductive paste containing an Ag filler, and the epoxy-based conductive paste containing the Ag filler is formed by screen printing.

(7) Next, as shown in FIGS. 4 (A) and 4 (B), the surface serving as the bonding surface of the ceramic substrate 10 and the surface serving as the bonding surface of the resin wiring substrate 30 are subjected to a surface activation treatment. I do. The surface activation treatment is for ceramics, metals,
A contamination source such as an organic substance and an inorganic substance adhering to each surface of the resin and a bonding layer that adsorbs the contamination source are removed, and an interface between each surface of the ceramics, metal, and resin and the surface of the adhesive layer 20 is removed. Can prevent the occurrence of bubbles and blisters. That is, the surface activation treatment prevents poor adhesion or peeling of the interface due to the generation of bubbles or blisters. In addition, the surface activation treatment performs surface modification to increase the bonding area by forming fine irregularities on the surface of each of ceramics, metal, and resin. Do. When the surface modification is performed in this manner, the adhesive force itself at the interface is increased, and adhesion failure and peeling can be further prevented.

In this embodiment, the surface activation treatment is performed by reactive ion etching (RIE). FIG.
As shown in FIG. 1A, a ceramic substrate 10 has a lower electrode 60 which also serves as a substrate holder of a reactive ion etching apparatus.
The ceramic substrate 10 is placed thereon, and a surface activation process is performed on the ceramic substrate 10 by plasma generated between the lower electrode 60 and the upper electrode 61. As shown in FIG.
Similarly, the resin wiring board 30 is subjected to a surface activation treatment by a reactive ion etching apparatus. Surface activation treatment is SF ₆
Gas, CF ₄ gas, O ₂ gas, CHF ₃ gas, HF gas, Ar and H ₂
This is performed by plasma using at least one kind of gas among mixed gas, BCl ₃ gas and HBr gas. SF ₆ gas or CF ₄ gas is practically used in semiconductor manufacturing technology, and is an optimal gas in terms of easy handling.

The surface activation treatment is not limited to RIE,
E or ICP etching can be used, and ultraviolet irradiation can be used. In CDE, an active gas generated by irradiating a microwave with a discharge tube is transported to an etching chamber by a transport tube, and a surface activation process is performed by plasma generated by the active gas. The plasma generated by using microwaves has a relatively low temperature, and is particularly suitable for the surface activation treatment of the resin wiring board 30 having poor heat resistance. That is, it is possible to reduce the adverse effects such as cracks, cracks, and warpages caused by the decomposition of the resin wiring substrate 30, particularly the substrate main body 33 formed of the liquid crystal polymer. For the generation of plasma, any of high frequency, helicon wave, and inductive coupling can be used in addition to microwaves.

Further, in the surface activation treatment, the temperature at which the contamination source and the bonding layer are removed, more specifically, the surface temperature of the ceramic substrate 10 and the surface temperature of the resin wiring substrate 30 during the surface activation treatment, determine the removal rate. It is an important factor to speed up. The surface temperature is preferably set in a range from -60 ° C to 300 ° C. -20 ℃ for ceramics and metals
It is preferable to set the temperature within a temperature range from to 300 ° C. The resin is preferably set within a temperature range from -60 ° C to 75 ° C. In particular, when the surface activation treatment of the resin wiring substrate 30 is performed by RIE, the resin surface is directly exposed to plasma, so that the resin surface is protected by setting the surface temperature low. Surface temperature of ceramics and metal is 30
If the temperature exceeds 0 ° C, the morphology of the compound due to the reaction between the ceramic surface or metal surface and the etching gas becomes complicated, or the formation rate of this compound exceeds the removal rate of the contamination source or the bonding layer, resulting in a decrease in the etching rate. Surface activation treatment cannot be performed. Conversely, when the surface temperature is lower than -60 ° C, the reactivity between the ceramic surface, metal surface, and resin surface and the etching gas is extremely reduced, and the surface activation treatment cannot be performed. In consideration of the stability of the process, the surface temperature of the surface activation treatment is most preferably in a temperature range from -40 ° C to 250 ° C.

In the case of employing a method involving generation of plasma in the surface activation treatment, it is practical to set the gas pressure within the range of 5.5 × 10 ⁻² Pa−10 ³ Pa. Further, when the method using ultraviolet irradiation, it is preferable to set the gas pressure in the range of 1kPa-10 ⁵ Pa. The surface activation treatment is performed in a short time of about 1 to 10 minutes. When a liquid crystal polymer is used for the substrate body 33 of the resin wiring substrate 30, the surface activation treatment can obtain a sufficient effect in about one minute. When a polyimide resin sheet is used for the substrate body 33, the surface activation treatment is performed for a slightly longer time than the liquid crystal polymer. In this case, as described above, the surface modification effect is conspicuous, and the surface of the substrate body 33 becomes viscous.

(8) As shown in FIGS. 5A and 5B, a semiconductor package is formed. First, FIG.
As shown in the figure, the resin wiring substrate 30 which has been similarly subjected to the surface activation treatment is superposed on the surface of the ceramic substrate 10 which has undergone the above-described surface activation treatment with the adhesive layer 20 interposed therebetween. The adhesive layer 20 uses an epoxy resin sheet in the present embodiment. The adhesive layer 20 is formed on the resin wiring board 3
A connection opening 20H is provided at a position corresponding to the protruding electrode 40 formed on the 0 terminal 31. The connection opening 20H is formed by mechanical punching. When using a paste-based adhesive layer 20 such as an epoxy-based resin paste, the adhesive layer 20 is applied on the surface of the ceramic substrate 10 by screen printing.

(9) As shown in FIG. 5B, a resin wiring substrate 30 is bonded to the surface of the ceramic substrate 10 with an adhesive layer 20 by thermocompression bonding. The thermocompression bonding is performed between the ceramic substrate 10 and the adhesive layer 20 and between the resin wiring substrate 30
The bonding is performed at a temperature at which the bonding between the substrate and the adhesive layer 20 is sufficiently performed and a pressure at which the electrical connection between the terminal 13 of the ceramic substrate 10 and the protruding electrode 40 is reliably performed. The heating temperature of the thermocompression bonding is, for example, in the range of 120 ° C. to 160 ° C., and the pressing force is, for example, in the range of 1MP to 5MP.
As a result of the surface activation treatment, the ceramic substrate 10 and the resin wiring substrate 30 are mechanically firmly joined together, and the terminal 13 of the ceramic substrate 10 and the terminal 31 of the resin wiring substrate 30 It is securely connected electrically.
When this bonding is completed, the semiconductor package is completed.

(10) As shown in FIG. 1, the semiconductor element 50 is attached to the semiconductor package,
The terminal 51 of the No. 0 and the wiring 34 of the resin wiring board 30 are electrically connected by bonding wires 52. Then, by forming the protective layer 54, the semiconductor device 1 employing the wire bonding method is completed. This semiconductor device 1 has a BGA structure, and a terminal 1 of a ceramic substrate 10.
4 is mounted on an external device via a protruding electrode (high melting point solder ball).

FIG. 6 is a diagram for explaining an effect based on the surface activation treatment of the semiconductor package according to the present embodiment. 6, the semiconductor packages of sample numbers 1 to 10 include a ceramic substrate 10 and a resin wiring substrate 30.
The surface activation treatment is performed under the conditions shown in FIG. In semiconductor packages that have been surface activated,
In each case, the contact angle is smaller by about two orders of magnitude than a semiconductor package in which the surface activation treatment is not performed. The contact angle refers to the surface of the ceramic substrate 20 on the bonding side, the resin wiring substrate 30.
And the angle formed by the surface of the pure water film that is dropped. In the semiconductor package subjected to the surface activation treatment as described above, no bubbles or blisters were observed at the bonding interface even when the heat resistance test was performed, and there was no poor bonding or peeling at the bonding interface. The heat resistance test is performed under the condition that the semiconductor device 1 is mounted on an external device, that is, the same condition as the reflow condition of the high melting point solder ball, specifically, 230
Performed at a temperature of ° C. for 1 minute.

On the other hand, in the semiconductor packages of Sample Nos. 11 to 13 which were not subjected to the surface activation treatment, bubbles and blisters were observed at the bonding interface after the heat resistance test, and poor bonding and peeling occurred.

As described above, in the semiconductor package according to the present embodiment, a contamination source such as an organic substance and an inorganic substance adhered to each of the surface of the ceramic substrate 10 and the surface of the resin wiring substrate 30 and a bonding layer with the contamination source are provided. Are removed by the surface activation treatment. Further, the surface activation treatment is performed to modify the surface of the ceramic substrate 10 and the surface of the resin wiring substrate 30 so that the adhesiveness is improved.
As a result of removing the contamination source and the bonding layer, the interface between the surface of the ceramic substrate 10 and the adhesive layer 20 and the resin wiring substrate 3
Air bubbles at any of the interfaces between the surface of
The occurrence of blisters and the like is eliminated, and poor adhesion and peeling between the ceramic substrate 10 and the resin wiring substrate 30 can be prevented. When the surface of each of the ceramic substrate 10 and the resin wiring substrate 30 is modified, further prevention of poor adhesion and peeling can be expected. Therefore, the yield can be improved in the production of a semiconductor package.

Furthermore, as a result of the improvement in the adhesive strength at the interface, the heating temperature in the thermocompression bonding process can be set low and the pressing force can be set small. In addition, the surface activation treatment is performed at a relatively low temperature by plasma generated by using a microwave or the like. Therefore, cracks due to cracking of the ceramic substrate 10 and decomposition of the resin wiring board 30,
Deformation (warpage), cracks, deterioration and the like can be prevented. From this point of view, the yield can be improved in the production of the semiconductor package, and the removal rate of the contamination source and the bonding layer can be increased by appropriately adjusting the substrate temperature during the surface activation treatment.

Further, the semiconductor element 5 is mounted on the semiconductor package.
In the manufacture of the semiconductor device 1 on which the “0” is mounted, the yield can be improved.

(Second Embodiment) In this embodiment, a case where the present invention is applied to a semiconductor device employing a flip-chip method will be described. FIG. 7 is a sectional view showing a main part of a semiconductor device in which a semiconductor element is mounted on a semiconductor package according to a second embodiment of the present invention. As shown in FIG. 7, in the semiconductor device 1 according to the present embodiment, the protruding electrode 5 is provided between the wiring 34 of the resin wiring substrate 30 and the terminal 51 of the semiconductor element 50.
5 are electrically connected to each other with a flip chip method. The protruding electrode 55 is formed of, for example, a solder ball. Also in the semiconductor device 1 configured as described above, a surface activation process is performed in forming a semiconductor package as in the first embodiment.

The present invention is not limited to the above embodiment. For example, the present invention can also be applied to a semiconductor package in which the resin wiring substrates 30 are formed on opposing surfaces of the ceramic substrate 10, respectively. As described in the first embodiment, also in this case, the surface activation treatment is performed on the bonding surfaces of the ceramic substrate 10 and the resin wiring substrate 30.

Further, the present invention is not limited to a semiconductor package, but is also applicable to a wiring board in which a ceramic substrate (or ceramic wiring board) and a resin wiring board are bonded.

[0055]

As described above, according to the present invention, poor adhesion and peeling can be prevented between the ceramic substrate and the adhesive layer and between the resin wiring substrate and the adhesive layer, and the production yield can be reduced. A method of forming a semiconductor package that can be improved can be provided.

Further, the present invention can provide a method of forming a semiconductor package which can prevent cracking of a ceramic substrate, deformation of a resin wiring substrate, and the like, and can improve production yield.

Further, the present invention can provide a method of forming a semiconductor device capable of preventing a conduction failure between a terminal of a ceramic substrate and a terminal of a resin wiring substrate and improving a production yield.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a principal part of a semiconductor device in which a semiconductor element is mounted on a semiconductor package according to a first embodiment of the present invention;

FIGS. 2A and 2B are diagrams for explaining a method of forming a ceramic substrate.

FIGS. 3A to 3D are views for explaining a method for forming a resin wiring board.

FIGS. 4A and 4B are diagrams for explaining a surface activation treatment.

FIGS. 5A and 5B are views for explaining a method of forming a semiconductor package; FIGS.

FIG. 6 is a diagram for explaining the effect of the surface activation treatment.

FIG. 7 is a cross-sectional structural view of a main part of a semiconductor device in which a semiconductor element is mounted on a semiconductor package according to a second embodiment of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Ceramic substrate 11, 33 Substrate main body 13, 33 Terminal 20 Adhesive layer 30 Resin wiring board 40 Projection electrode 50 Semiconductor element

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hideki Yamaguchi 7-1 Nisshincho, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba Electronic Engineering Co., Ltd.

Claims (2)

[Claims] A step of forming a ceramic substrate and a resin wiring substrate each having terminals disposed on the surface thereof; a step of performing a surface activation treatment on each of the ceramic substrate surface and the resin wiring substrate surface; Bonding the resin wiring board surface with an adhesive layer interposed therebetween, and electrically connecting the terminals of the ceramic substrate and the terminals of the resin wiring board with the protruding electrodes interposed therebetween. Semiconductor package forming method. Wherein the step of performing the surface activation treatment, SF ₆ gas, CF ₄ gas, 0 ₂ gas, CHF ₃ gas, HF gas, Ar and
A mixed gas of H _2, BCl ₃ gas, out of the HBr gas, by a plasma using at least one gas, wherein the ceramic substrate is a step of performing an activation treatment on each surface of the resin wiring substrate A method for forming a semiconductor package according to claim 1.