JPH11261074A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH11261074A
JPH11261074A JP10082947A JP8294798A JPH11261074A JP H11261074 A JPH11261074 A JP H11261074A JP 10082947 A JP10082947 A JP 10082947A JP 8294798 A JP8294798 A JP 8294798A JP H11261074 A JPH11261074 A JP H11261074A
Authority
JP
Japan
Prior art keywords
wiring
film
valve metal
metal film
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10082947A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11261074A5 (OSRAM
Inventor
Hisashi Otani
久 大谷
Hiroki Adachi
広樹 安達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP10082947A priority Critical patent/JPH11261074A/ja
Priority to US09/210,781 priority patent/US6369410B1/en
Publication of JPH11261074A publication Critical patent/JPH11261074A/ja
Priority to US10/101,830 priority patent/US6613614B2/en
Publication of JPH11261074A5 publication Critical patent/JPH11261074A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP10082947A 1997-12-15 1998-03-13 半導体装置およびその作製方法 Withdrawn JPH11261074A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10082947A JPH11261074A (ja) 1998-03-13 1998-03-13 半導体装置およびその作製方法
US09/210,781 US6369410B1 (en) 1997-12-15 1998-12-15 Semiconductor device and method of manufacturing the semiconductor device
US10/101,830 US6613614B2 (en) 1997-12-15 2002-03-21 Semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10082947A JPH11261074A (ja) 1998-03-13 1998-03-13 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH11261074A true JPH11261074A (ja) 1999-09-24
JPH11261074A5 JPH11261074A5 (OSRAM) 2005-07-21

Family

ID=13788423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10082947A Withdrawn JPH11261074A (ja) 1997-12-15 1998-03-13 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH11261074A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102665537A (zh) * 2009-11-11 2012-09-12 卡兹欧洲公司 用于动脉血压监测器的袖带
JP2015079265A (ja) * 1999-10-29 2015-04-23 株式会社半導体エネルギー研究所 電子装置
US9290695B2 (en) 2013-04-19 2016-03-22 Joled Inc Method for manufacturing a thin-film semiconductor device using an etching solution for an aluminum oxide film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079265A (ja) * 1999-10-29 2015-04-23 株式会社半導体エネルギー研究所 電子装置
CN102665537A (zh) * 2009-11-11 2012-09-12 卡兹欧洲公司 用于动脉血压监测器的袖带
US9290695B2 (en) 2013-04-19 2016-03-22 Joled Inc Method for manufacturing a thin-film semiconductor device using an etching solution for an aluminum oxide film

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