JPH11233700A - Resin encapsulated semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the size and wt. of a surface mount type mini-molded package. SOLUTION: A semiconductor chip 3 is mounted on a die pad 2 of a lead frame 1 and connected to inner leads 4 by bonding wires 5, and these are encapsulated with a resin to form a package 6. The inner leads 4 are disposed on only one side of the die pad 2 with a specified gap T1, and an outer lead 7a integrated with the die pad 2 and outer leads 7b, 7c integrated with the inner leads 4 are led out from the side face of the package 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a miniaturized resin-encapsulated semiconductor device (hereinafter referred to as a semiconductor device).

[0002]

2. Description of the Related Art In recent years, as electronic devices have become smaller and lighter, there has been a demand for smaller semiconductor devices used in the electronic devices.

FIG. 4 is a plan view of a surface mount type semiconductor device for explaining an example of the related art. As shown in FIG. 4, a conventional semiconductor device includes a semiconductor chip 3 connected to a lead frame 1.
The semiconductor chip 3 and the inner leads 4 arranged on both sides of the die pad 2 are electrically connected by bonding wires 5. Thereafter, these are sealed with a resin to form a resin package 6. Outer leads 7a, 7b and 7c formed integrally with each other are led out of the package 6 from the die pad 2 and the inner leads 4.

The dimension of the long side of the semiconductor device 1 is as follows:
[Interval T1 from resin end to inner lead 4] ×
2, [width of inner lead 4] × 2, [interval T2 from end of inner lead 4 to end of die pad 2] ×
2, [the width of the die pad 2].

Conventionally, the size of each part has been reduced to reduce the size of the semiconductor device 1 itself. For example, the width of the inner lead 4 and the distance from the end of the inner lead 4 to the end of the die pad 2 have been reduced. T2 is determined by the processing accuracy of the lead frame 1, the width of the die pad 2 is regulated by the dimensions of the semiconductor chip 3 to be mounted, and the interval T1 from the resin end to the inner lead 4 is determined by the removal of the inner lead 4. Determined in consideration of strength. As described above, in the conventional semiconductor device 1, each part has already become the minimum size, and it is difficult to further reduce the size.

On the other hand, as for miniaturization of a semiconductor device which is far from a practical surface, as shown in, for example, Japanese Patent Application Laid-Open No. 5-55273, a die pad is formed perpendicular to a mounting surface to prevent wire bending, edge short-circuit, and so on. Alternatively, a technology for reducing the size without exposing a wire is also known. Also, Japanese Patent Application Laid-Open
As disclosed in JP-A-97462, a technique for introducing external leads from different sides and reducing the package width of the lead lead-out portion at the center is disclosed in JP-A-6-181280. A technique for moving a chip to one side of a package to reduce the length of the package body is also known.

[0007]

In the above-described resin-encapsulated semiconductor device, particularly in Japanese Patent Application Laid-Open No. 5-55273, there is no means for reducing the lateral (long-side) dimension of the semiconductor device. When the die pad is shaped in the vertical direction, a vertical shaping step is required, which has a disadvantage of increasing the cost.

Further, in Japanese Patent Application Laid-Open No. 8-97462, there is a problem that the width of the package must be formed smaller than the width of the central body.

The reason is that the distance between the inner lead of the semiconductor device and the resin end is already minimized in consideration of the pull-out strength of the inner lead, and when applied to a surface mount type mini-mold type package, This is because the distance between the lead and the resin end is further reduced, and the strength of the inner lead coming off is reduced.

An object of the present invention is to provide a resin-encapsulated semiconductor device in which the size in the horizontal direction (long side direction) is shortened and the package is reduced in size and weight without changing the widths and intervals of the above-described portions. To provide.

[0011]

In a resin-sealed semiconductor device according to the present invention, a semiconductor chip is mounted on a die pad of a lead frame, and the semiconductor chip and inner leads are connected by bonding wires. In the resin-encapsulated semiconductor device that forms a package by doing, the first and second inner leads are arranged at a predetermined interval only on one side of the die pad,
A first outer lead formed integrally with the die pad and second and third outer leads formed integrally with the first and second inner leads, respectively, are led out from side surfaces of the package.

[0012]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view of a semiconductor device showing a first embodiment of the present invention. As shown in FIG. 1, the semiconductor device according to the present embodiment mounts a semiconductor chip 3 on a die pad 2 of a lead frame 1 and connects the semiconductor chip 3 and two inner leads 4 to bonding wires 5.
Connect with. Thereafter, these are formed into a resin package 6 by resin sealing. Thereby, a surface mount type mini-mold package is obtained. The back surface of the semiconductor chip 3 serves as a collector, and is electrically connected by being mounted on the die pad 2.

In such a semiconductor device, two inner leads 4 are arranged at a predetermined interval T2 only on one side of the die pad 2, and the outer leads 7a and the two inner leads 4 formed integrally with the die pad 2 Outer leads 7b and 7c (one is a base lead and the other is an emitter lead) formed integrally with each other are formed so as to be led out from the side surface of the package 6 in the opposite direction (180 degrees apart). That is, the die pad 2 of the lead frame 1 is formed integrally and the outer lead 7a is formed at a portion protruding from the resin package 6, and similarly, each inner lead 4 forms the outer lead 7b, 7c. At this time, the interval between the die pad 2 and the resin end of the lead frame 1 and the interval between the inner lead 4 and the resin end are both T1.

In short, the inner leads 4 are arranged only on one side of the die pad 2, and the outer leads 7 a integral with the die pad 2 and the outer leads 7 b integral with one inner lead 4 are mounted on one of the long sides of the package 6. The outer lead 7c integrated with the other inner lead 4 is led out to the other long side of the package 6. With such a configuration, the width of the inner lead 4 and the dimension between the inner lead 4 and the die pad 2 can be saved, so that the size and weight of the semiconductor device can be reduced.

Hereinafter, specific embodiments will be described.
First, 0.15 mm to 0.2 mm is attached to one side of a die pad 2 of 0.4 mm square to 0.5 mm square extracted with a press die.
An inner lead 4 having a width is arranged. A 0.1 mm to 0.2 mm outer lead 7a formed integrally with the die pad 2 and a 0.1 mm to 0.2 mm outer lead 7b formed integrally with the other inner lead 4.
Are led out to one of the long sides of the resin package 6 of 0.5 mm to 0.8 mm × 1 mm to 1.5 mm, and the outer lead 7 c formed integrally with the other inner lead 4 is connected to the long side of the resin package 6. Derived to the other.

Next, since the interval T2 between the inner lead 4 and the die pad 2 is determined by the thickness of the lead frame 1, if the lead frame having a thickness of 0.1 mm to 0.12 mm is used, the interval T2 is reduced. 0.1mm-0.1
It can be formed to 2 mm.

Further, the die pad 2 of the lead frame 1
T1 between the resin and the resin end is desirably 0.15 mm to 0.2 mm in consideration of the pull-out strength of the inner lead 4.

After the above arrangement, 0.4 mm square to
A 0.2 mm square semiconductor chip 3 is mounted on the die pad 2, and then the semiconductor chip 3 and the inner leads 4 are electrically connected by bonding wires 5.

The above is one specific example, but the die pad 2 is 0.4 mm square and the semiconductor chip 3 is 0.25 m
m, the inner lead 4 has a width of 0.2 mm, the outer lead 7a has a width of 0.2 mm, and the outer leads 7b and 7c have a width of 0.2 mm.
15 mm width, resin package 6 0.7 mm x 1.0 m
m, the thickness of the lead frame 1 is 0.1 mm, and the interval T
2 is formed to 0.1 mm, and the interval T1 is set to 0.15 mm.
Can also be formed.

FIG. 2 is a plan view of a semiconductor device according to a second embodiment of the present invention. As shown in FIG. 2, in the semiconductor device according to the present embodiment, outer leads 7 a integrated with the die pad 2 are derived from the short side direction of the resin package 6. That is, two inner leads 4
The two outer leads 7b and 7c formed integrally with the die pad 2 are similar to those of the first embodiment described above, and only the outer lead 7a formed integrally with the die pad 2 is led out from the short side surface of the package 6. Other specific conditions and the like are the same as in the above-described first embodiment.

FIG. 3 is a plan view of a semiconductor device according to a third embodiment of the present invention. As shown in FIG. 3, in the semiconductor device according to the present embodiment, the outer leads 7b and 7c integrated with the inner lead 4 are connected to the short side of the resin package 6 from which the outer lead 7a integrated with the die pad 2 is led out. Is derived from the opposite short side, and the other is the same as in the first and second embodiments.

[0023]

As described above, in the resin-encapsulated semiconductor device of the present invention, by disposing the inner leads only on one side of the die pad, the distance between one inner lead and the die pad and the distance of one inner lead can be obtained. And the width of the resin package can be reduced in dimension, so that the dimension on the long side of the resin package can be reduced, and the overall size and weight can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a plan view of a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a plan view of a semiconductor device showing an example of the related art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Die pad 3 Semiconductor chip 4 Inner lead 5 Bonding wire 6 Resin package 7a-7c Outer lead T1 Lead frame-resin interval T2 Inner lead-die pad interval

Claims (5)

[Claims] 1. A resin-sealed semiconductor device in which a semiconductor chip is mounted on a die pad of a lead frame, the semiconductor chip and inner leads are connected by bonding wires, and these are sealed with a resin to form a package. First and second inner leads are arranged at a predetermined interval only on one side of the die pad, and the first outer lead and the first and second inner leads are formed integrally with the die pad, respectively. A resin-encapsulated semiconductor device, wherein second and third outer leads formed on the package are led out from a side surface of the package. 2. The resin-encapsulated semiconductor device according to claim 1, wherein said package is a surface-mount mini-mold package. 3. A first outer lead formed integrally with the die pad and a second outer lead formed integrally with the first inner lead are led out from one side surface of the package, and the second outer lead is formed on the second inner lead. The resin-encapsulated semiconductor device according to claim 1, wherein a third outer lead integrally formed with the inner lead is led out from the other side surface of the package. 4. A first outer lead formed integrally with the die pad and second and third outer leads formed integrally with the first and second inner leads are formed from a short side surface of the package. The resin-sealed semiconductor device according to claim 1, wherein the semiconductor devices are led out in opposite directions. 5. The first and second outer leads formed integrally with the die pad are formed from short sides of the package, and are formed integrally with the first and second inner leads. The resin-encapsulated semiconductor device according to claim 1, wherein the semiconductor devices extend in opposite directions from a long side surface of the package.