JPH11214605A - Manufacture of semiconductor device and lead frame used in the manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the cost of a semiconductor device by miniaturizing a lead frame. SOLUTION: A lead frame 10 is provided with a brim type lead frame brim constituted of an outer brim and an inner brim, a tab which is positioned in the lead frame brim and fixes a semiconductor chip, a plurality of leads 3 whose inner ends extend to the periphery of the above tab, a dam 14 linking the leads 3, a tab suspending lead which supports the tab and connected with at least the dam 14, a linkage part 15 which supports the outer end of each lead of a lead group, constituted of a plurality of the leads 3 which are arranged in parallel and stretched, and stretches along the outer brim or the inner brim, and a transformation part 21 which links the linkage part 15 and the lead frame brim, does not protrude to the direction of the lead frame brim along the linkage part 15, and can be transformed, in accordance with the movement of the lead 3 supported by the linkage part 15 to the lead frame brim center.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device and a lead frame used in the manufacturing thereof, and more particularly, to a method of forming a lead in a state of a lead frame, plating the lead, and then cutting the lead. The present invention relates to a technology effective when applied to a technology for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In a semiconductor device such as an IC (integrated circuit device), a sealing structure using a resin is known as a sealing structure for sealing a semiconductor chip or the like.

[0003] A resin-sealed (resin package) type semiconductor device is manufactured using a lead frame. A predetermined area of the lead frame on which the fixing of the semiconductor chip and the wire bonding are completed is molded by a transfer molding apparatus. Then, after removing resin burrs protruding from the sealing region, a desired semiconductor device is manufactured by cutting and removing a dam (tie bar) connecting the leads, cutting the leads, and forming the leads.

On the other hand, there is known a technique of manufacturing a semiconductor device by performing lead molding in a state of a lead frame after transfer molding, plating the leads, and then cutting the leads.

[0005] As a technique for plating a lead after the lead is formed, for example, a technique described in Japanese Patent Application Laid-Open No. 8-148624 is known.

[0006] This document states that "after a semiconductor chip and a lead frame are integrally sealed with a resin mold, the outer leads connected by a dam bar and a connecting portion are integrally bent and formed. The outer frame is fixed, and the bending process is performed smoothly by using the extension deformation of the deformed portion provided between the connecting portion and the outer frame.The dam bar is laser-cut and the generated dross is chemically cut. It is almost completely removed by the treatment. Thereafter, the outer leads are plated with solder, and the connecting portions are cut. "

On the other hand, "VLSI Packaging Technology (Lower)" published by Nikkei BP, published on May 15, 1993, pages P41 to P43, describes deburring. According to the document, after molding, after removing burrs between leads and the surface of the leads (burr removing step), solder plating, solder dip,
It is described that exterior processing such as tin plating is performed, and then lead molding (trimming and forming) is performed. The deburring is performed by a high-pressure water method or a liquid honing method.

[0008] In addition, the document describes that if the burrs are not removed, the burrs will be peeled off after the exterior treatment, and the base material of the lead frame will be exposed, thereby impairing the solder wettability and corrosion resistance of the outer leads. ing.

In P49 of the VLSI packaging technology (below), a bending die for forming a lead in a gull wing shape is provided with a bending method using a bending die and a bending punch, a cam method, and a roller formed by horizontal bending using a roller. The method is described.

[0010]

In a conventional method of manufacturing a semiconductor device in which a lead frame is plated and then a lead is formed, the lead is rubbed at the time of forming the lead, and plating debris is generated. Or Further, it takes time to clean the mold to remove the plating debris. This results in increased product costs.

For this reason, as described in the above-mentioned document, after lead molding is performed in a state of a lead frame,
A semiconductor device manufacturing method of forming plating on a lead has been adopted.

A semiconductor device generally has an SOP (Small Outline Package) structure in which a plurality of leads protrude from both sides of a sealing body (package) made of a rectangular body, and a QFP (QFP) in which a plurality of leads protrude from four sides of the package. Quad Flat Package) structure is known.

For this reason, in a lead frame for manufacturing an SOP, a lead group consisting of a plurality of leads extending side by side becomes two groups extending on both sides of a central package region of the lead frame. In this lead frame, there are four groups that are developed on the four sides of the package area at the center of the lead frame.

Since lead molding is performed in the state of the lead frame, unnecessary portions except for the connecting portion are cut and removed before molding. The connecting portion is connected to the lead frame via a deforming portion. The deformed portion is deformed by lead molding so as to absorb a change when a group of leads moves to the package side.

[0015] In the conventional case, the deformed portion is formed between the connecting portion extending substantially parallel to each side of the lead frame frame, as described in the literature. Further, the deformed portion has a structure in which three slits (grooves) are alternately inserted from the left and right so that the lead can be extended following the movement of the lead.

As a result, the length of the deformed portion formed between one side of the lead frame frame and the connecting portion becomes longer, and the lead frame becomes larger, thereby preventing a reduction in the manufacturing cost of the semiconductor device.

On the other hand, in the case of manufacturing a semiconductor device by forming a plated lead as described above, the plating may be detached or cracked. When the lead width is wide, the plating detachment and cracks on the plating surface are likely to occur. The occurrence of these plating delaminations and cracks causes the product to be treated as poor appearance, which increases the product cost.

An object of the present invention is to reduce the manufacturing cost of a semiconductor device. Another object of the present invention is to reduce the manufacturing cost of a semiconductor device having a partly wide lead. Another object of the present invention is to provide a lead frame whose dimensions can be reduced. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0019]

The following is a brief description of an outline of typical inventions disclosed in the present application. (1) a frame-shaped lead frame frame including an outer frame and an inner frame, a tab positioned in the lead frame frame to fix a semiconductor chip, and a plurality of leads extending an inner end around the tab. A dam that connects the leads, a tab suspension lead that supports the tab and is connected to at least the dam, and supports each lead outer end of a lead group consisting of a plurality of leads extending side by side; A connecting portion extending along the outer frame or the inner frame, and a lead that connects the connecting portion and the lead frame frame and does not protrude toward the lead frame frame along the connecting portion and is supported by the connecting portion. Preparing a lead frame having a deformable portion having a shape deformable as the lead frame moves to the center of the lead frame; fixing a semiconductor chip to the tab; Electrically connecting an inner end of the semiconductor chip to an electrode of the semiconductor chip by connecting means, and sealing the semiconductor chip, the connecting means, and the inner end of the lead by resin sealing to form a sealed body. A step of cutting and removing unnecessary lead frame portions so that each lead group is supported on the lead frame frame by only the connecting portion and the deformed portion; and a step of molding the leads, and before or after the lead molding. The method includes a step of removing the dam, a step of plating a surface of the lead, and a step of cutting each lead from the connection portion. Some of the leads are wider than other leads. The lead is formed into a gull wing mold.

(2) In the configuration of the means (1), as the lead frame, a frame-shaped lead frame frame including an outer frame and an inner frame, and a tab positioned in the lead frame frame for fixing a semiconductor chip; A plurality of leads extending an inner end around the tab, a dam connecting the leads, a tab suspension lead supporting the tab and being connected to at least the dam, a plurality of tabs extending side by side with each other; A connecting portion that supports the outer end of each lead of the lead group including the leads and extends along the outer frame or the inner frame, and a connection that interconnects the connecting portion, the lead frame frame, the dam, and the like. A portion that connects the connecting portion and the lead frame frame and does not protrude toward the lead frame frame along the connecting portion. After cutting off a part of the connecting portion and the unnecessary lead frame portion and separating it from the dam, a lead frame having a structure that can be deformed as the lead supported by the connecting portion moves to the center of the lead frame frame is prepared. I do.

According to the above-mentioned means (1), the deformed portion connected to the connecting portion supporting each lead group connects the connecting portion to the lead frame frame and eclipses near the lead frame frame along the connecting portion. Since the lead does not protrude and has a shape that can be deformed along with the movement of the lead supported by the connecting portion to the center of the lead frame frame, the dimension between the connecting portion and the lead frame frame can be reduced, and the lead frame Can be reduced in size.

Therefore, it is possible to reduce the manufacturing cost of the semiconductor device by reducing the material cost of the lead frame.

According to the means (2), the deformed portion supporting the connecting portion supporting each lead group is supported by the connecting portion via the deformed portion. The connecting portion is supported by the deformed portion by cutting at the manufacturing stage of the portion of the connecting portion except for the portion where the lead frame frame and the deformed portion are continuous and the unnecessary lead frame portion, and after the cutting, the means Each lead group can be formed as in the case of (1).
Further, as in the case of the means (1), the deformed portion does not protrude toward the lead frame frame along the connecting portion, so that the dimension between the connecting portion and the lead frame frame can be reduced, and the lead can be reduced. The size of the frame can be reduced. Therefore, the reduction of the material cost of the lead frame and the reduction of the manufacturing cost of the semiconductor device can be achieved.

[0024]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

(Embodiment 1) FIGS. 1 to 9 are diagrams relating to the manufacture of a semiconductor device according to an embodiment (Embodiment 1) of the present invention.

In the first embodiment, an example in which the present invention is applied to the manufacture of a QFP type semiconductor device as shown in FIGS. 2 and 3 will be described.

As shown in FIGS. 2 and 3, the semiconductor device 1 has a plurality of leads 3 protruding from four sides of a peripheral surface of a sealing body (package) 2 made of a flat rectangular body and made of an insulating resin. ing. These leads 3 are formed in a gull wing shape.

In the lead group (lead row) 4 on each side of the package 2, the center lead 3b is much wider than the other leads 3a. This central lead (wide lead) 3b is connected to a tab 6 supporting the semiconductor chip 5 located in the package 2,
Transferring the heat generated in the semiconductor chip 5 to the substrate,
It plays a role in releasing into the air.

Next, the manufacture of the semiconductor device 1 of the first embodiment will be described. As shown in the flowchart of FIG. 4, the semiconductor device 1 starts manufacturing (step 101),
Lead frame preparation (Step 102), chip bonding (Step 103), wire bonding (Step 104), molding (Step 105), separation by lead group (Step 106), lead molding (Step 10)
7), Dam cutting (Step 108), Burr removal (Step 109), Lead plating (Step 110), Lead cutting (Step 111), Manufacturing end (Step 112)
It is manufactured through each of the steps.

In manufacturing the semiconductor device 1, a lead frame 10 is used. 5 and 6 are plan views showing a lead frame 10 according to the present invention.

The lead frame 1 is, for example, 0.15
It is formed by patterning an iron-nickel alloy plate, copper plate, copper alloy plate, or the like having a thickness of about 0.2 mm by etching or precision press.

The lead frame 10 according to the first embodiment
Is for QFP. In FIG. 5, the lead portion (inner lead portion) inside the dam is omitted because the drawing is fine and unclear, and in FIG. 6, the pattern of the inner lead is enlarged.

FIG. 5 shows a single lead pattern.
The actual lead frame 10 has a strip shape in which a plurality of the lead patterns are arranged in series.

The lead frame 10 is a rectangular frame-shaped lead comprising a pair of outer frames 11 extending in parallel and an inner frame 17 orthogonal to the pair of outer frames 11 and connecting the pair of outer frames 11. It has a frame 13 and has a basic configuration in which a lead or the like is arranged in the lead frame.

Next, a lead pattern as a basic configuration will be described. At the center of the lead frame (frame) 13, a substantially rectangular tab 6 for fixing the semiconductor chip 5 is provided. In addition, a plurality of leads 3 extend from each of the sides of the tab 6 from the surrounding four directions.

A lead group (lead row) 4 composed of a plurality of leads 3 extending in each direction side by side from each other in four directions.
, The central lead 3b is a wide lead 3b
The leads 3 on both sides are ordinary narrow leads 3a.

The wide lead 3b is connected to the tab 6 and also serves as a tab suspension lead. Thereby, the wide lead 3b plays a role of transmitting the heat generated in the semiconductor chip 5 to the implementation substrate or dissipating it into the air.

The other lead 3a has its inner end close to the periphery of the tab 6. Wires are connected to these inner ends. Therefore, although not shown, the inner end portion is plated with gold or the like for wire connection.

In each lead group 4, each lead 3
Are connected by a thin dam 14 extending in a direction perpendicular to the leads 3. This dam 14 has the same lead group 4
Are arranged so as to be located on the same straight line, and both ends intersect and are integrated with the dams 14 of the adjacent lead groups 4. Therefore, the dam 14 has a frame-like pattern as a whole.

The dam 14 serves to prevent the melted resin from flowing out when the package 2 is formed by the transfer molding apparatus, and also functions as a strength member of the lead 3 when handling the lead frame.

On the other hand, the outer end of the lead 3 is connected to a connecting portion 15 extending parallel to the outer frame 11 or the inner frame 12,
5 is supported. An end of the connecting portion 15 is formed to project from each corner of the lead frame 13 so as to protrude.
0 through a deformation portion 17.

In the method of manufacturing a semiconductor device according to the first embodiment, lead molding is performed in a state of a lead frame. Therefore, by providing the deformation portion 17,
Since the deformed portion 17 is deformed when the lead 3 is formed,
This enables the rear end of each lead to move to the center of the lead frame frame during molding.

As the deforming portion 17, a bar-like member extending straight may be directly connected to the projecting portion 20, but in this case, the deforming portion 17 at the base of the projecting portion 20 is used.
In the first embodiment, since the deformed portion may be broken by applying a large stress to the portion,
It is bent near zero, and the stress is relieved at the bent portion 21.

This is one of the features of the present invention. The deformed portion 17 is formed so as not to protrude outwardly from the connecting portion 15 (toward the outer frame 11 or the inner frame 12). That is, the deforming portion 17 connected to the predetermined connecting portion 15 is formed by the outer frame 11 extending parallel to the predetermined connecting portion 15.
Alternatively, it does not protrude toward the inner frame 12 (lead frame frame 13).

As a result, although the gap (groove) 22 between the connecting portion 15 and the outer frame 11 or the inner frame 12 is drawn wide in the figure, it should be set to the minimum size at the time of pattern formation of the lead frame 10. The size can be greatly reduced as compared with the conventional size in which a meandering deformed portion is formed between the outer frame 11 or the inner frame 12 and the connecting portion 15.

That is, in the first embodiment, the distance (L) between the outer frame 11 or the inner frame 12 and the connecting portion 15 may be only the dimension for forming one groove, and the distance (L) when forming the pattern of the lead frame 10 may be sufficient. It can be the smallest dimension. For example, since the minimum groove width can be made the same size as the thickness (a) of the lead frame by etching, the interval (L) can be set to a, and when formed by pressing, L is approximately 0.8a. can do.

On the other hand, in the case of the deformed portion of the meandering pattern using three gaps (grooves) in the conventional lead frame, the width of the three grooves is twice the width of the meandering deformed portion. At least the sum of the dimensions is required.

Therefore, according to the first embodiment, since the unit lead pattern can be reduced, the lead frame 10
It is possible to reduce the size of the semiconductor device and to reduce the material cost and the manufacturing cost of the semiconductor device.

The deformable portion 17 is not limited to the pattern of the first embodiment, but has a shape which can be deformed as the lead rear end portion moves to the center of the frame during lead molding, and is hardly damaged. Of course, any other shape may be used as long as it has a shape and structure.

Each lead group 4 extends from the center of the lead frame frame in each direction of the cross, and the corner of the frame becomes an unused area where no lead is arranged. The size and shape of can be freely selected by design. That is, the deformed part 1
7 is provided in the unused area at the corner of the frame as described above, and has a high degree of freedom in design, and has an advantage that the pattern can be freely selected in a meandering shape, a bent shape, and the like for flexible bending.

And, naturally, this meandering shape,
Selection of a pattern such as a bent shape does not cause an increase in the size of the lead frame. The overhang 20 is also a part of the lead frame.

On the other hand, the lead frame 10
Guide holes 25, 2 for transferring and positioning
6 are provided.

Next, a method for manufacturing a QFP type semiconductor device 1 using such a lead frame 10 will be described.

After preparing the lead frame 10 as shown in FIG. 5 (step 102), the semiconductor chip 5 is fixed on the tab 6 of the lead frame 10 as shown in FIG. 6 (step 103).

Next, as shown in FIG. 6, an electrode (not shown) of the semiconductor chip 5 and the tip of the lead 3 are connected by a conductive wire 7. The ground electrode of the semiconductor chip 5 and the wide lead 3b are also connected by the wire 7 (step 10).
4).

Next, as shown in FIG. 7, a sealing body (package) 2 made of an insulating resin is formed in a region inside the dam 14 by using a conventional transfer molding apparatus. 5, the wires 7, the inner ends of the leads 3 and the like are covered with the package 2 (step 105).
In FIG. 7, reference numeral 30 denotes a cured resin cured at the runner portion of the mold.

Next, separation of each lead group 4 extending in four directions is performed by a usual punching device (press) (not shown) (step 106), and as shown in FIG. The four corners of the dam 14 are cut and removed.

Next, the lead 3 is formed by a conventional forming apparatus (step 107). Forming is performed by an ironing method using a bending die and a bending punch, a cam method, a roller method using horizontal bending using a roller, or the like. By this molding, as shown in FIGS. 1 and 9, the lead 3 is molded into a gull-wing shape.

FIG. 1 shows the rear end portion of the lead 3 and the connecting portion 15 before molding by a two-dot chain line, and shows the lead 3 and the connecting portion 15 formed in a gull-wing shape by a solid line. FIG. 9 partially shows the connecting portion 15 before molding by a two-dot chain line.

Next, although not shown, the dam 14 connecting the leads 3 is cut by a conventional punching device (press) (step 108).

The dam cutting may be performed before the lead molding. However, when the lead is formed after the dam is cut, it can be said that the rear end of the lead is supported by the connecting portion 15 and sometimes the interval between the leads 3 changes. As a result, the effect remains even after the lead 3 is cut off from the connecting portion 15, and the lead pitch may be partially disturbed even if a little. For a product in which this slight disturbance of the lead pitch is a problem in the mounting of a semiconductor device, dam cutting is preferably performed after lead molding.

Next, the resin burr generated during the transfer molding is removed using a conventional burr removing device (step 109).

Next, a plating film made of solder plating or the like is formed on the surface of the lead 3 protruding from the package 2. Since each lead 3 is connected to the connecting portion 15,
Plating can be formed by electrolytic plating using the lead frame 13 as one electrode (step 11).
0).

Next, the lead 3 is cut along the two-dot chain line A in FIG. 1 so as to be separated from the connecting portion 15 (step 111). Thus, the gull-wing type semiconductor device 1 as shown in FIGS. 2 and 3 can be manufactured (step 112).

According to the first embodiment, the following effects can be obtained. (1) The deformed portion 17 connected to the connecting portion 15 supporting each lead group 4 includes the connecting portion 15 and the lead frame frame 13.
And does not protrude toward the lead frame 13 (the outer frame 11 or the inner frame 12) along the connecting portion 15, and the lead 3 supported by the connecting portion 15 moves to the center of the frame. Due to the deformable shape, the dimension between the connecting portion 15 and the lead frame 13 can be reduced, and the size of the lead frame 10 can be reduced.

(2) The material cost of the lead frame 10 can be reduced by downsizing the lead frame 10, and the manufacturing cost of the semiconductor device 1 manufactured using the lead frame 10 can be reduced.

(3) Since plating is formed on the lead 3 after the lead is formed, desorption of the plating and cracks on the plating surface do not occur during the manufacturing, the yield can be improved, and the product cost can be reduced. it can.

(Embodiment 2) FIGS. 10 to 14 are diagrams relating to the manufacture of a semiconductor device according to another embodiment (Embodiment 2) of the present invention.

The second embodiment is a manufacturing method in which a part of a lead frame is punched out during manufacturing, and a lead is formed as a structure in which a connecting portion supporting a lead is supported only by a deformed portion by the punching.

FIG. 10 is a schematic plan view of a lead frame used in manufacturing the semiconductor device according to the second embodiment. FIG. 11 shows a state in which the semiconductor chip is fixed and the electrodes of the semiconductor chip and the inner ends of the leads are connected by wires. FIG. 12 is a schematic enlarged plan view showing a part of the lead frame shown in FIG. 12, FIG. 12 is a schematic plan view showing a lead frame in a state where semiconductor chips, wires and the like are molded, and FIG. 13 is a schematic plan view showing the lead frame before lead molding. FIG. 14 is a schematic plan view showing a lead frame after lead molding. These drawings respectively correspond to FIGS. 5 to 9 of the first embodiment.

As shown in FIGS. 10 and 11, the lead frame 10 of the second embodiment is different from the lead frame 10 of the first embodiment in that
The corner portion is connected to the middle of the deformed portion 17 via the linking piece 40, and the linking piece 40 and the deforming portion 17 form a connecting portion 41. That is, the connecting portion 41 is connected to the connecting portion 15 and the lead frame 13 (the outer frame 11).
And the inner frame 12) and the dam 14 are mutually connected.

Before the lead forming in the manufacture of the semiconductor device 1, the linking piece 40 of the connecting portion 41 and the corners of the dam 14, which is an unnecessary lead frame portion, are cut so that the lead can be formed. Is what you do.

Here, the lead frame 1 of the second embodiment
The configuration of 0 will be described below.

The lead frame 10 includes a frame-shaped lead frame 13 comprising an outer frame 11 and an inner frame 12, a tab 6 which is located in the lead frame 13 and fixes the semiconductor chip 5, and a periphery of the tab 6. A plurality of leads 3 whose inner ends extend, a dam 14 connecting the leads 3, a tab suspension lead supporting the tab 6 and connected to at least the dam 14, and extending side by side with each other. A connecting portion 15 that supports each lead outer end of a lead group 4 including a plurality of leads 3 and extends along the outer frame 11 or the inner frame 12, the connecting portion 15, the lead frame frame 13, and the dam 14 are connected to each other, and a part of the connecting portion 41 connects the connecting portion 15 and the lead frame 13 together with the connecting portion 41. After forming a deformed portion 17 that does not protrude toward the lead frame frame 13 along 5, a part of the connecting portion 41 (linking piece 40) and a linking portion (corner of the dam 14) are cut and separated from the dam 14. Has a structure that can be deformed as the lead 3 supported by the connecting portion 15 moves to the center of the lead frame 13.

Next, a method of manufacturing the semiconductor device 1 shown in FIGS. 2 and 3 using such a lead frame 10 will be described.

After preparing the lead frame 10 as shown in FIG. 10 (step 102), as shown in FIG.
The semiconductor chip 5 is fixed on the tab 6 of the lead frame 10 (Step 103).

Next, as shown in FIG. 11, an electrode (not shown) of the semiconductor chip 5 is connected to a tip of the lead 3 by a conductive wire 7. The ground electrode of the semiconductor chip 5 and the wide lead 3b are also connected by the wire 7 (step 10).
4).

Next, as shown in FIG. 12, a sealing body (package) 2 made of an insulating resin is formed in a region inside the dam 14 by using a conventional transfer molding apparatus. 5, the wires 7, the inner ends of the leads 3, etc. are covered with the package 2 (step 10).
5). In FIG. 12, reference numeral 30 denotes a cured resin cured at the runner portion of the mold.

Next, separation of each lead group 4 extending in four directions is performed by a usual punching device (press) (not shown) (step 106), and as shown in FIG. The four corners of the dam 14 and the linking piece 40 of the connecting portion 41 are cut and removed.

As a result, the connecting portion 15 of each lead group 4
Is supported by the overhanging portion 20 which is also the lead frame 13 (the outer frame 11 and the inner frame 12) only by the deforming portion 17, and the lead forming in units of four lead groups can be performed similarly to the first embodiment. Will be possible.

Next, the lead 3 is formed by a conventional forming apparatus (step 107). Forming is performed by an ironing method using a bending die and a bending punch, a cam method, a roller method using horizontal bending using a roller, or the like. By this molding, as shown in FIG. 14, the lead 3 is formed in a gull wing shape. FIG. 14 partially shows the connecting portion 15 before molding by a two-dot chain line.

Next, although not shown, the dam 14 connecting the leads 3 is cut by a conventional punching device (press) (step 108). Dam cutting may be performed before lead molding as in the case of the first embodiment.

Next, the resin burr generated during the transfer molding is removed using a conventional burr removing device (step 109).

Next, a plating film made of solder plating or the like is formed on the surface of the lead 3 protruding from the package 2. Since each lead 3 is connected to the connecting portion 15,
Plating can be formed by electrolytic plating using the lead frame 13 as one electrode (step 11).
0).

Next, the lead 3 is cut so as to be separated from the connecting portion 15 (step 111). by this,
A gull-wing type semiconductor device 1 as shown in FIGS. 2 and 3 can be manufactured (step 112).

According to the second embodiment, the deforming portion 17 supporting the connecting portion 15 supporting each lead group 4 is supported by the connecting portion 41 via the deforming portion 17. Portion of the connecting portion 41 except for a portion where the lead frame frame 13 and the deformed portion 17 are continuous and unnecessary lead frame portions (corners of the dam 14)
By the cutting in the manufacturing stage, the connecting portion 15 is supported only by the deformed portion 17, and after the cutting, each lead group 4 can be formed as in the case of the first embodiment. Further, similarly to the first embodiment, the deformed portion 17 is provided with the lead frame 13 along the connecting portion 15.
(Outer frame 11 and inner frame 12) Because they do not protrude closer,
The dimension between the connecting portion 15 and the lead frame 13 can be reduced, and the lead frame 10 can be downsized. Therefore, a reduction in the material cost of the lead frame 10 and a reduction in the manufacturing cost of the semiconductor device 1 can be achieved.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist thereof. Needless to say. At least, the present invention is applicable to a technique for manufacturing a resin-sealed semiconductor device.

[0088]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows. (1) A connecting portion supporting each lead of the lead group is supported by a lead frame frame by a deformed portion so that lead molding can be performed in a state of the lead frame. The deformed portion is a lead along a predetermined connecting portion. Frame frame (outer frame or inner frame)
Since the structure does not protrude to the side, the dimension between the connecting portion and the lead frame frame (outer frame or inner frame) can be reduced, and downsizing of the lead frame can be achieved. (2) The material cost of the lead frame can be reduced by downsizing the lead frame, and the manufacturing cost of the semiconductor device can be reduced. (3) Since plating is formed on the lead after the lead is formed, detachment of the plating and generation of cracks on the plating surface do not occur in the course of the manufacturing, so that the yield can be improved and the product cost can be reduced. In particular, in the case of a semiconductor device having a structure in which some of the leads have a wide lead width, the problem of desorption of the plating and cracks on the plating surface is solved, so that the production cost can be reduced by improving the yield.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a part showing a deformed state of a lead portion during lead molding in manufacturing a semiconductor device according to one embodiment (Embodiment 1) of the present invention.

FIG. 2 is a plan view of the semiconductor device according to the first embodiment.

FIG. 3 is a side view of the semiconductor device according to the first embodiment.

FIG. 4 is a flowchart illustrating the manufacture of the semiconductor device according to the first embodiment.

FIG. 5 is a schematic plan view of a lead frame used in manufacturing the semiconductor device of the first embodiment.

FIG. 6 is a schematic enlarged plan view showing a part of the lead frame showing a state where the semiconductor chip is fixed and the electrodes of the semiconductor chip and the inner ends of the leads are connected by wires in the manufacture of the semiconductor device of the first embodiment. .

FIG. 7 is a schematic plan view showing a lead frame in a state where a semiconductor chip, a wire, and the like are molded in manufacturing the semiconductor device of the first embodiment.

FIG. 8 is a schematic plan view showing a lead frame before lead molding in manufacturing the semiconductor device of the first embodiment.

FIG. 9 is a schematic plan view showing a lead frame after lead molding in manufacturing the semiconductor device of the first embodiment.

FIG. 10 is a schematic plan view of a lead frame used in manufacturing a semiconductor device according to another embodiment (Embodiment 2) of the present invention.

FIG. 11 is a schematic enlarged plan view showing a part of a lead frame showing a state in which a semiconductor chip is fixed and the electrodes of the semiconductor chip and the inner ends of the leads are connected by wires in the manufacture of the semiconductor device of Embodiment 2; .

FIG. 12 is a schematic plan view showing a lead frame in a state where a semiconductor chip, a wire, and the like are molded in manufacturing the semiconductor device of the second embodiment.

FIG. 13 is a schematic plan view showing a lead frame before lead molding in manufacturing the semiconductor device of the second embodiment.

FIG. 14 is a schematic plan view showing a lead frame after lead molding in manufacturing the semiconductor device of the second embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Sealing body (package), 3 ... Lead, 3a ... Lead, 3b ... Wide lead, 4 ... Lead group (lead row), 5 ... Semiconductor chip, 6 ... Tab, 10 ... Lead frame, 11 ... outer frame, 12 ... inner frame, 13 ... lead frame frame, 14 ... dam, 15 ... connecting portion, 17 ... deformed portion, 20 ... projecting portion, 21 ... bent portion, 22 ... gap (groove),
25, 26: guide hole, 30: cured resin, 40: linking piece, 41: connecting part.

Claims (7)

[Claims] 1. A frame-shaped lead frame frame including an outer frame and an inner frame, a tab positioned in the lead frame frame for fixing a semiconductor chip, and a plurality of leads extending inside ends around the tab. A dam connecting the leads, a tab suspension lead supporting the tab and connected to at least the dam, and supporting each lead outer end of a lead group including a plurality of leads extending side by side with each other. A connecting portion extending along the outer frame or the inner frame, and connecting the connecting portion and the lead frame frame, and supporting the connecting portion without protruding toward the lead frame frame along the connecting portion. Preparing a lead frame having a deformable portion having a shape that can be deformed with the movement of the lead to the center of the lead frame frame, and fixing a semiconductor chip to the tab, A step of electrically connecting an inner end of the lead and an electrode of the semiconductor chip by connection means,
A step of sealing the semiconductor chip, the connection means, and the inner ends of the leads by resin sealing to form a sealed body, and supporting each lead group on a lead frame frame only by the connecting portion and the deformed portion. Cutting and removing the unnecessary lead frame portion, forming the lead, removing the dam before or after forming the lead, plating the surface of the lead, And a step of cutting each lead. 2. A frame-shaped lead frame frame comprising an outer frame and an inner frame, a tab positioned in the lead frame frame for fixing a semiconductor chip, and a plurality of leads having inner ends extending around the tab. A dam connecting the leads, a tab suspension lead supporting the tab and connected to at least the dam, and supporting each lead outer end of a lead group including a plurality of leads extending side by side with each other. And a connecting portion extending along the outer frame or the inner frame, and a connecting portion for mutually connecting the connecting portion, the lead frame frame, the dam, and the like, and a part of the connecting portion is the connecting portion. A part that connects the lead frame and the lead frame along the connecting part becomes a deformed part that does not protrude toward the lead frame, and cuts a part of the connection part and an unnecessary lead frame part. Preparing a lead frame having a structure that can be deformed along with the movement of the lead supported by the connecting portion to the center of the lead frame frame after being separated from the dam, and fixing a semiconductor chip to the tab. A step of electrically connecting an inner end of the lead to an electrode of the semiconductor chip by a connecting means, and sealing the semiconductor chip, the connecting means, and the inner end of the lead by resin sealing. Forming a body;
A step of cutting and removing unnecessary lead frame portions so that each of the lead groups is supported on the lead frame frame only by the connecting portion and the deformed portion; a step of forming the leads; and forming the dam before or after the lead forming. A method for manufacturing a semiconductor device, comprising: a step of removing; a step of plating a surface of the lead; and a step of cutting each lead from the connection portion. 3. The method according to claim 1, wherein a part of the lead is wider than other leads. 4. The method for manufacturing a semiconductor device according to claim 1, wherein said leads are formed into a gull-wing shape. 5. A frame-shaped lead frame frame comprising an outer frame and an inner frame, a tab located in the lead frame frame for fixing a semiconductor chip, and a plurality of leads having inner ends extending around the tab. A dam connecting the leads, a tab suspension lead supporting the tab and connected to at least the dam, and supporting each lead outer end of a lead group including a plurality of leads extending side by side with each other. A connecting portion extending along the outer frame or the inner frame, and connecting the connecting portion and the lead frame frame, and supporting the connecting portion without protruding toward the lead frame frame along the connecting portion. A deformable portion having a shape that can be deformed as the lead moves to the center of the lead frame frame. 6. A frame-shaped lead frame frame comprising an outer frame and an inner frame, a tab located in the lead frame frame for fixing a semiconductor chip, and a plurality of leads having inner ends extending around the tab. A dam connecting the leads, a tab suspension lead supporting the tab and connected to at least the dam, and supporting each lead outer end of a lead group including a plurality of leads extending side by side with each other. And a connecting portion extending along the outer frame or the inner frame, and a connecting portion for mutually connecting the connecting portion, the lead frame frame, the dam, and the like, and a part of the connecting portion is the connecting portion. A part that connects the lead frame and the lead frame along the connecting part becomes a deformed part that does not protrude toward the lead frame, and cuts a part of the connection part and an unnecessary lead frame part. A lead frame having a structure that can be deformed after the lead supported by the connecting portion moves to the center of the lead frame frame after being separated from the dam. 7. The lead frame according to claim 5, wherein a part of the lead is wider than other leads.