JPH11200032A - 絶縁膜のスパッタ成膜方法 - Google Patents
絶縁膜のスパッタ成膜方法Info
- Publication number
- JPH11200032A JPH11200032A JP431298A JP431298A JPH11200032A JP H11200032 A JPH11200032 A JP H11200032A JP 431298 A JP431298 A JP 431298A JP 431298 A JP431298 A JP 431298A JP H11200032 A JPH11200032 A JP H11200032A
- Authority
- JP
- Japan
- Prior art keywords
- film
- target
- coil
- insulating film
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000001965 increasing effect Effects 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 25
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 88
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 22
- 239000013078 crystal Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101710162453 Replication factor A Proteins 0.000 description 1
- 102100035729 Replication protein A 70 kDa DNA-binding subunit Human genes 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP431298A JPH11200032A (ja) | 1998-01-12 | 1998-01-12 | 絶縁膜のスパッタ成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP431298A JPH11200032A (ja) | 1998-01-12 | 1998-01-12 | 絶縁膜のスパッタ成膜方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11200032A true JPH11200032A (ja) | 1999-07-27 |
| JPH11200032A5 JPH11200032A5 (enrdf_load_stackoverflow) | 2005-06-16 |
Family
ID=11580976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP431298A Pending JPH11200032A (ja) | 1998-01-12 | 1998-01-12 | 絶縁膜のスパッタ成膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11200032A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2346155A (en) * | 1999-01-06 | 2000-08-02 | Trikon Holdings Ltd | Sputtering apparatus |
| JP2001342555A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | スパッタリングによる成膜方法、及び該成膜方法を用いる光起電力素子の製造方法 |
| WO2011077653A1 (ja) * | 2009-12-25 | 2011-06-30 | キヤノンアネルバ株式会社 | 電子デバイスの製造方法、およびスパッタリング装置 |
| WO2012157202A1 (ja) * | 2011-05-13 | 2012-11-22 | シャープ株式会社 | 薄膜形成方法 |
| WO2017154774A1 (ja) * | 2016-03-08 | 2017-09-14 | 学校法人 芝浦工業大学 | 窒化アルミニウム膜、窒化アルミニウム膜の製造方法、および高耐圧部品 |
-
1998
- 1998-01-12 JP JP431298A patent/JPH11200032A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2346155A (en) * | 1999-01-06 | 2000-08-02 | Trikon Holdings Ltd | Sputtering apparatus |
| GB2346155B (en) * | 1999-01-06 | 2003-06-25 | Trikon Holdings Ltd | Sputtering apparatus |
| JP2001342555A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | スパッタリングによる成膜方法、及び該成膜方法を用いる光起電力素子の製造方法 |
| WO2011077653A1 (ja) * | 2009-12-25 | 2011-06-30 | キヤノンアネルバ株式会社 | 電子デバイスの製造方法、およびスパッタリング装置 |
| JP5658170B2 (ja) * | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | スパッタリング方法およびスパッタリング装置 |
| US8992743B2 (en) | 2009-12-25 | 2015-03-31 | Canon Anelva Corporation | Sputtering method and sputtering apparatus |
| WO2012157202A1 (ja) * | 2011-05-13 | 2012-11-22 | シャープ株式会社 | 薄膜形成方法 |
| WO2017154774A1 (ja) * | 2016-03-08 | 2017-09-14 | 学校法人 芝浦工業大学 | 窒化アルミニウム膜、窒化アルミニウム膜の製造方法、および高耐圧部品 |
| JPWO2017154774A1 (ja) * | 2016-03-08 | 2019-01-10 | 学校法人 芝浦工業大学 | 窒化アルミニウム膜、窒化アルミニウム膜の製造方法、および高耐圧部品 |
| US11572275B2 (en) | 2016-03-08 | 2023-02-07 | Shibaura Institute Of Technology | Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Effective date: 20040917 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040917 |
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| A977 | Report on retrieval |
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| A521 | Written amendment |
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Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070518 |
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| A02 | Decision of refusal |
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