JPH11194360A - Liquid crystal device, electronic equipment, and projection display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain image display of high quality by superior switching by improving light shielding against return light, etc., from below TFTs(thin film transistor) of a precharge circuit, a sampling circuit, etc., in an active matrix drive liquid crystal device. SOLUTION: The liquid crystal device 200 is equipped with a liquid crystal layer sandwiched between a couple of substrates, pixel electrodes 11 which are provided in matrix on the substrate, and TFTs 30 which perform switching control over them. A light shield layer is provided below those TFTs 30 and the TFTs 202 to 302 of the precharge circuit 201 and sampling circuit 301.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of a liquid crystal device of an active matrix drive system by driving a thin film transistor (hereinafter, appropriately referred to as a TFT) and an electronic apparatus using the same, and is particularly used for a liquid crystal projector and the like. The present invention belongs to a technical field of a liquid crystal device in which a light shielding layer is provided below a TFT and an electronic apparatus using the same.

[0002]

2. Description of the Related Art Conventionally, when a liquid crystal device of this type is used as a light valve in a liquid crystal projector or the like, generally, projection light is incident from the side of a counter substrate which is disposed opposite to a TFT array substrate with a liquid crystal layer interposed therebetween. You. Here, when the projected light enters a region for forming a channel formed of an amorphous silicon film or a polysilicon film of the TFT, a photoelectric current is generated in this region due to a photoelectric conversion effect, and the transistor characteristics of the TFT deteriorate. For this reason, a light-shielding layer is generally formed from a metal material such as Cr (chromium) or resin black on the opposite substrate at a position facing each TFT.

Further, in this type of liquid crystal device, a regular staggered or coplanar amorphous silicon or polycrystalline silicon having a top gate structure (ie, a structure in which a gate electrode is provided above a channel on a TFT array substrate) is used. In the case of using a silicon TFT, it is necessary to prevent a part of the projection light from entering the TFT channel from the TFT array substrate side as return light by the projection optical system in the liquid crystal projector. Similarly, the reflected light from the surface of the TFT array substrate when the projected light passes therethrough, or when it is emitted from another liquid crystal device when a plurality of liquid crystal devices are used in combination for color, passes through the projection optical system after being emitted. It is also necessary to prevent a part of the incoming projection light from entering the TFT channel region from the TFT array substrate side as return light. For this purpose, Japanese Patent Application Laid-Open No. 9-127497, Japanese Patent Publication No. 3-52611, Japanese Patent Application Laid-Open No. 3-125123, and Japanese Patent Application Laid-Open No. 8-171101 disclose TFTs on a TFT array substrate made of a quartz substrate or the like. For example, a liquid crystal device in which a light-shielding layer is formed of an opaque high-melting point metal at an opposing position (that is, below the TFT) has been proposed.

On the other hand, in this type of liquid crystal device, a scanning line driving circuit, a data line driving circuit, a precharge circuit,
Various peripheral circuits, such as a sampling circuit and an inspection circuit, each including a TFT as a component may be provided on such a TFT array substrate.

Among these peripheral circuits, a precharge circuit is used to improve a contrast ratio, stabilize a potential level of a data line, reduce line unevenness on a display screen, and the like.
By supplying a precharge signal (image auxiliary signal) to the data line at a timing preceding the image signal supplied from the data line driving circuit, a circuit for reducing the load when the image signal is written to the data line. is there. In particular, in a so-called 1H inversion driving method in which a voltage polarity of a data line, which is usually performed for AC driving of a liquid crystal, is inverted at a predetermined cycle, a precharge signal is written in the data line in advance, so that an image signal is converted to a data signal. The amount of electricity required to write a line can be significantly reduced. For example, Japanese Patent Application Laid-Open No. Hei 7-2955
Japanese Patent Publication No. 20 discloses an example of such a precharge circuit.

The sampling circuit is a circuit for sampling an image signal in order to stably supply a high-frequency image signal to each data line at a predetermined timing in synchronization with a scanning signal. The inspection circuit is a circuit for inspecting the quality, defects, and the like of the liquid crystal device during manufacturing or shipping. In addition, various peripheral circuits using TFTs or the like can be provided on the TFT array substrate from the viewpoints of improving image quality in liquid crystal displays, reducing power consumption, reducing costs, and the like.

It is known that applying a DC voltage to a liquid crystal sealed in a liquid crystal device of this type causes deterioration of the liquid crystal. Therefore, in general, the liquid crystal is not driven by a direct current, but the liquid crystal is driven by an alternating current by inverting the voltage polarity of an image signal for each pixel at a predetermined period, for example, every one field. However, if the above-described peripheral circuit is provided on the substrate portion facing the liquid crystal, the DC voltage component in the peripheral circuit becomes larger or smaller and is applied to the liquid crystal. . Therefore, it is not common to provide these peripheral circuits on the substrate portion facing the liquid crystal.
Providing the peripheral circuit on the substrate portion facing the liquid crystal is not common from the viewpoint of relatively reducing the effective display area. For this reason, these peripheral circuits are stored in a light-shielding case made of plastic or the like.
It is provided on the periphery of the FT array substrate. Therefore,
For the TFTs constituting these peripheral circuits, a light-shielding layer for projection light is provided on the counter substrate side, and a light-shielding layer for return light is provided on the TFT array substrate side, like the TFT for driving the pixel electrode described above. Never.

[0008]

SUMMARY OF THE INVENTION In a liquid crystal device,
If the size of the liquid crystal module to which the peripheral circuits are added is the same, an image is displayed by a screen display area defined by a plurality of pixel electrodes arranged in a matrix, that is, a change in the alignment state of the liquid crystal actually on the liquid crystal device. There is a general demand that the larger the area, the better.

However, in the configuration in which the above-described peripheral circuit is provided in the peripheral portion of the substrate housed in the light-shielding case,
Inevitably, the width of this case part is increased, and the above general request cannot be answered. Conversely, if these peripheral circuits are forcibly provided in a narrow and narrow peripheral portion, there is a problem that it becomes difficult to design these peripheral circuits so as to meet specific specifications.

Further, when the peripheral circuit is provided on the substrate portion facing the liquid crystal in the screen display area, the projection light enters the TFT constituting the peripheral circuit from the counter substrate side, and the return light from the TFT array substrate side. Is incident. Therefore, there is a problem that a photocurrent is generated and the transistor characteristics of the TFT are deteriorated. In addition, the provision of the peripheral circuit on the substrate portion facing the liquid crystal in the screen display area not only reduces the effective display area but also prevents the DC voltage from being applied to the liquid crystal from the peripheral circuit. There is also a problem that a special configuration is required.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has an object to shield light such as return light from below a switching element such as a TFT included in peripheral circuits such as a precharge circuit, a sampling circuit, and an inspection circuit. It is an object to provide a liquid crystal device capable of displaying high-quality images with high performance and excellent switching characteristics, and an electronic device including the liquid crystal device.

[0012]

According to a first aspect of the present invention, there is provided a liquid crystal device comprising a pair of first and second substrates, wherein a liquid crystal is sandwiched between the first and second substrates. A plurality of scanning lines, a plurality of data lines intersecting the plurality of scanning lines, a plurality of first switching elements connected to the plurality of scanning lines and the data lines, and a plurality of first switching elements. A plurality of pixel electrodes connected to each other, a sampling circuit for sampling an image signal by a plurality of second switching elements and supplying the image signals to the plurality of data lines, and a plurality of data lines by a plurality of third switching elements. At least one of a precharge circuit and a precharge circuit that supplies a precharge signal of a predetermined voltage level prior to the image signal, respectively, is disposed on the first substrate;
At positions respectively opposed to at least one of the second and third switching elements of the first switching element and the at least one circuit,
A light shielding layer is further provided between the first substrate, the first switching element, and the one element.

According to the liquid crystal device of the first aspect, the sampling circuit samples the image signal by the plurality of second switching elements, such as TFTs, and supplies the image signal to the plurality of data lines. The precharge circuit is, for example, T
Precharge signals of a predetermined voltage level are respectively supplied to a plurality of data lines by a plurality of third switching elements made of FT or the like prior to the image signals. At least one of the sampling circuit and the precharge circuit is provided on the first substrate. Here, at a position facing each of the first switching element and at least one of the second and third switching elements included in the at least one circuit, a light-shielding layer includes the first substrate, the first switching element, Each is provided between the one element. Therefore, even if return light or the like enters from the side of the first substrate, before the light enters the first, second, and third switching elements composed of, for example, a TFT, the light shielding formed at a position facing each of the first and second switching elements. The return light and the like are shielded by the layer. For this reason, for example, the first and second
In addition, a situation in which a photocurrent is generated by the photoelectric conversion effect in the third switching element and the switching characteristics are degraded is prevented. Further, since the sampling circuit and the precharge circuit are shielded from light as described above,
There is no need to dispose these circuits around the first substrate in a light-shielding case as in the related art. For example, these circuits can be arranged on the first substrate portion facing the light-shielding peripheral partition formed on the second substrate.

According to a second aspect of the present invention, there is provided a liquid crystal device according to the first aspect, wherein at least one of the first, second, and third switching elements comprises a thin film transistor. And a semiconductor layer constituting the thin film transistor formed on the light shielding layer via an insulating film.

According to the liquid crystal device of the present invention, at least one of the first, second, and third switching elements constitutes a thin film transistor (TFT) formed on the light shielding layer via an insulating film. Even if return light or the like enters from the side of the first substrate, the return light or the like is formed by a light-shielding layer formed at a position facing the semiconductor layer before the light enters the semiconductor layer. It is shaded. Therefore, a photocurrent is generated in the semiconductor layer by a photoelectric conversion effect, and T
Deterioration of the transistor characteristics of the FT is prevented beforehand.

According to a third aspect of the present invention, there is provided a liquid crystal device according to the first or second aspect, wherein at least one of the first, second, and third switching elements is an LDD. The light shielding layer is provided at least at a position facing a channel region and an LDD region of the thin film transistor.

According to the liquid crystal device of the third aspect, at least one of the first, second, and third switching elements is formed of a TFT having an LDD structure, and the light-shielding layer is formed of at least a channel region and a TFT of the TFT. Since it is provided at a position facing the LDD region, even if return light or the like enters from the side of the first substrate, it is formed at a position facing the channel region and the LDD region before entering the channel region and the LDD region. The return light and the like are shielded by the light shielding layer. Therefore, a situation in which a photocurrent is generated in the channel region and the LDD region due to a photoelectric conversion effect and the transistor characteristics of the TFT are deteriorated is prevented beforehand.

According to a fourth aspect of the present invention, there is provided a liquid crystal device as set forth in any one of the first to third aspects, wherein the light shielding layer is formed by the same thin film forming process over the entire area. It is characterized by being formed from the same material.

According to the liquid crystal device of the present invention, the light-shielding layer is provided for each of the various switching elements. ing. That is, in this case, in the manufacturing process of the liquid crystal device, it is possible to form the light shielding layers for various switching elements by the same process.

According to a fifth aspect of the present invention, there is provided a liquid crystal device according to any one of the first to fourth aspects, wherein the light shielding layer is connected to a constant potential source. It is characterized by.

According to the liquid crystal device of the present invention, since the light shielding layer is connected to the constant potential source, the light shielding layer is kept at the constant potential. Therefore, the fluctuation of the potential of the light-shielding layer does not adversely affect the switching element such as the TFT disposed opposite to the light-shielding layer.

According to a sixth aspect of the present invention, there is provided a liquid crystal device according to the fifth aspect, wherein the constant potential of the constant potential source is equal to a ground potential.

According to the liquid crystal device of the present invention, since the light-shielding layer is set to the ground potential, T is disposed opposite to the light-shielding layer.
The fluctuation of the potential of the light shielding layer does not adversely affect the switching element such as the FT.

According to a seventh aspect of the present invention, there is provided a liquid crystal device according to the fifth aspect, further comprising a counter electrode provided on a side of the second substrate facing the liquid crystal. The constant potential of the constant potential source is equal to the potential of the counter electrode.

According to the liquid crystal device of the present invention, since the light-shielding layer is set at the potential of the counter electrode, the potential fluctuation of the light-shielding layer adversely affects a switching element such as a TFT disposed opposite to the light-shielding layer. Never.

According to a eighth aspect of the present invention, there is provided a liquid crystal device according to any one of the first to seventh aspects, wherein at least one of the first, second, and third switching elements is provided. One is formed of a thin film transistor of one of N-channel type, P-channel type and complementary type.

According to the liquid crystal device of the eighth aspect, at least one of the first, second, and third switching elements is any one of an N-channel type, a P-channel type, and a complementary type. Since the light shielding layer is provided at least at a position facing the TFT,
Even if return light or the like enters from the first substrate side, the TFT
Before returning to the light, the return light and the like are shielded by a light shielding layer formed at a position facing the light. Therefore, a photocurrent is generated in the TFT due to a photoelectric conversion effect,
Deterioration of the transistor characteristics of the TFT is prevented.

According to a ninth aspect of the present invention, there is provided a liquid crystal device according to any one of the first to eighth aspects, wherein the liquid crystal device is provided on a plane parallel to the first and second substrates. A sealing member that surrounds the liquid crystal by bonding the first and second substrates around a screen display area defined by a plurality of pixel electrodes, and between the seal member and the screen display area on the plane. And a light-shielding peripheral parting formed on the second substrate along the outline of the screen display area, wherein the at least one circuit is provided at a position facing the peripheral parting. And

According to the liquid crystal device of the ninth aspect, the light-shielding peripheral parting is performed along the contour of the screen display area between the seal member surrounding the liquid crystal and the screen display area.
Formed on the substrate. Here, at least one of the sampling circuit and the precharge circuit is provided at a position facing the peripheral parting, so that a so-called peripheral parting can be used effectively. In particular, in this case, since the peripheral parting is light-shielding, even if the projection light or the like enters from the side of the second substrate, the peripheral parting is performed by the peripheral parting before entering the switching elements of these sampling circuits and precharge circuits. This projection light or the like is shielded. Therefore, there is no inconvenience that the switching characteristic is deteriorated due to the photoelectric conversion effect generated in the switching element due to the projection light or the like. The arrangement of the sampling circuit and the precharge circuit at the position facing the peripheral partition in this way is very advantageous because it is not necessary to shield light from the second substrate side.

According to a tenth aspect of the present invention, there is provided a liquid crystal device according to any one of the first to ninth aspects, wherein the precharge circuit is provided, and The line is characterized in that the image signal is supplied from one side of the data line and the precharge signal is supplied from the other side.

According to the liquid crystal device of the tenth aspect, the plurality of data lines are supplied with an image signal from one side of the data lines, and are supplied with a precharge signal from the other side of the data lines. Therefore, the precharge circuit can be provided on the opposite side of the screen display area from the data line driving circuit for supplying the image signal, the sampling circuit, and the like.

In order to solve the above-mentioned problems, the liquid crystal device according to claim 11 is the liquid crystal device according to any one of claims 1 to 10, wherein a fourth inspection for performing a predetermined inspection on the liquid crystal device is performed. An inspection circuit including a switching element is further provided on the first substrate, and the light shielding layer is further provided between the first substrate and the fourth switching element at a position facing the fourth switching element. It is characterized by having.

According to the liquid crystal device of the eleventh aspect, a light shielding layer is provided between the first substrate and the fourth switching element at a position facing the fourth switching element of the inspection circuit. I have. Therefore, even if return light or the like enters from the side of the first substrate, before the light enters the fourth switching element formed of, for example, a TFT or the like, the return light or the like is formed by the light-shielding layer formed at a position facing the fourth switching element. Are shaded. For this reason, a situation in which a photocurrent is generated by the photoelectric conversion effect in the fourth switching element formed of, for example, a TFT and the switching characteristics are degraded is prevented beforehand. Further, since the inspection circuit is shielded from light in this manner, it can be arranged, for example, on the first substrate portion facing the light-shielding peripheral partition formed on the second substrate.

According to a twelfth aspect of the present invention, there is provided a liquid crystal device according to the first aspect, wherein the at least one circuit is replaced with a voltage holding circuit for operating the liquid crystal device. A peripheral circuit including a fifth switching element is provided on the first substrate, and the light-shielding layer is provided between the first substrate and the fifth switching element at a position facing the fifth switching element. It is characterized by having.

According to the liquid crystal device of the twelfth aspect, a light shielding layer is provided between the first substrate and the fifth switching element at a position facing the fifth switching element of the peripheral circuit. I have. Therefore, even if return light or the like enters from the side of the first substrate, before the light enters the fifth switching element made of, for example, a TFT or the like, the return light or the like is formed by the light-shielding layer formed at a position facing the fifth switching element. Are shaded. For this reason, it is possible to prevent a situation in which a photocurrent is generated due to a photoelectric conversion effect in the fifth switching element made of, for example, a TFT, and the switching characteristics are degraded and the holding voltage is changed. Further, since the peripheral circuit is shielded from light in this manner, it can be arranged, for example, on the first substrate portion facing the light-shielding peripheral partition formed on the second substrate.

According to a thirteenth aspect of the present invention, there is provided an electronic apparatus including the liquid crystal device according to the first to twelfth aspects.

According to a thirteenth aspect of the present invention, an electronic apparatus includes the above-described liquid crystal device of the present invention,
Since various operations are performed by the switching element having a high light-shielding performance against return light and the like and excellent switching characteristics, high-quality image display is possible.

According to a fourteenth aspect of the present invention, there is provided a projection type display device, wherein a light source, a liquid crystal light valve which receives light emitted from the light source and modulates the light in accordance with image information, and a light modulated by the liquid crystal light valve. In a projection type display device having a projection unit for projecting light, the liquid crystal light valve has a liquid crystal sandwiched between a first substrate disposed on a light incident side and a second substrate disposed on a light exit side. Liquid crystal device,
A first polarizing means disposed outside the first substrate, and a second polarizing means disposed outside the second substrate;
On the second substrate, a plurality of scanning lines, a plurality of data lines intersecting the plurality of scanning lines, a plurality of first thin film transistors connected to the plurality of scanning lines and the data lines, A plurality of pixel electrodes connected to a first thin film transistor; and a light blocking layer is arranged between the second substrate and the first thin film transistor corresponding to at least a channel region of the first thin film transistor; A space is formed between the second polarizing means and the liquid crystal device.

According to the projection display device of the present invention, by forming the light shielding layer between the second substrate and the first thin film transistor, it is possible to prevent a leak current due to return light. Further, since the influence of the return light on the liquid crystal light valve can be prevented, it is not necessary to attach a polarizing means with an antireflection film to the liquid crystal device as in the related art. Therefore, it is possible to form the gap without attaching the second polarizing means to the liquid crystal device, and it is possible to prevent the temperature of the liquid crystal light valve from rising.

According to a fifteenth aspect of the present invention, there is provided a projection type display device, comprising: a light source; a color separation unit for separating a light beam emitted from the light source into at least two color light beams; A liquid crystal light valve that modulates the light beam in accordance with image information; a combining unit that combines light modulated by the liquid crystal light valve; and a projection unit that projects a combined light beam emitted from the combining unit. In the projection display device, the liquid crystal light valve includes a liquid crystal device in which a liquid crystal is sandwiched between a first substrate disposed on a light incident side and a second substrate disposed on a light exit side.
A first polarizing unit disposed outside the first substrate, and a second polarizing unit disposed outside the second substrate; a plurality of scanning lines on the second substrate; A plurality of data lines intersecting a plurality of scanning lines; a plurality of first thin film transistors connected to the plurality of scanning lines and the data lines; and a plurality of pixel electrodes connected to the plurality of first thin film transistors. A light-shielding layer is arranged between the second substrate and the first thin-film transistor at least corresponding to a channel region of the first thin-film transistor;
The polarizing means is attached to the synthesizing means.

According to the projection display device of the present invention, since the second polarizing means is attached to the synthesizing means, a space is formed between the liquid crystal device and the second polarizing means. Therefore, a rise in the temperature of the liquid crystal device can be avoided,
Malfunction of the liquid crystal light valve can be prevented.

According to a sixteenth aspect of the present invention, in the projection type display device according to the fifteenth aspect, the combining means comprises a prism unit.

According to the projection type display apparatus of the present invention, the synthesizing means comprises a prism unit, and the second polarizing means is attached to the prism unit. Since the prism unit has a large heat capacity, the heat capacity of the second polarizing means can be absorbed by the prism unit, which is effective for preventing a temperature rise of the liquid crystal light valve.

According to a seventeenth aspect of the present invention, in the projection type display device according to the fifteenth or sixteenth aspect, cooling means for sending cool air between the liquid crystal device and the second polarizing means. Is further provided.

According to the projection type display device of the present invention, for example, a cooling means is provided on one of the upper side and the lower side of the synthesizing means, and cool air is sent from the cooling means between the liquid crystal device and the polarizing means. In addition, the temperature of the liquid crystal light valve can be further prevented from rising, and malfunction of the liquid crystal light valve can be prevented.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0047]

Embodiments of the present invention will be described below with reference to the drawings.

(Structure of Liquid Crystal Device) The structure of the embodiment of the liquid crystal device will be described with reference to FIGS.

First, the overall structure of the liquid crystal device will be described with reference to FIG.
3 will be described with reference to FIG. FIG. 1 is a block diagram showing a configuration of various wirings, peripheral circuits, and the like provided on a TFT array substrate in the embodiment of the liquid crystal device.
FIG. 3 is a plan view of the TFT array substrate together with components formed thereon viewed from the counter substrate side, and FIG. 3 is a cross-sectional view taken along the line HH ′ of FIG. 2 including the counter substrate.

In FIG. 1, a liquid crystal device 200 is a TF made of, for example, a quartz substrate, a hard glass, a silicon substrate, or the like.
A T-array substrate 1 is provided. A plurality of pixel electrodes 11 provided in a matrix on the TFT array substrate 1;
A plurality of data lines 35 arranged in the X direction, each extending along the Y direction, a plurality of scanning lines 31 arranged in the Y direction, each extending along the X direction, each data line 35 and the pixel electrode 11 And a plurality of TFTs 30 as an example of a switching element that respectively control the conducting state and the non-conducting state therebetween in accordance with a scanning signal supplied via the scanning line 31. ing. On the TFT array substrate 1, a capacitance line 31 ′ (second storage capacitance electrode), which is a wiring for a storage capacitor (see FIG. 6) described later, is formed in parallel with the scanning line 31.

On the TFT array substrate 1, a precharge circuit 201 for supplying a precharge signal of a predetermined voltage level to a plurality of data lines 35 in advance of an image signal, respectively.
And a sampling circuit 301 that samples an image signal and supplies the data signal to the plurality of data lines 35, a data line driving circuit 101, and a scanning line driving circuit 104.

The scanning line driving circuit 104 applies a scanning signal to the scanning lines 31 in a pulse-wise line-sequential manner at a predetermined timing based on a power supply, a reference clock and the like supplied from an external control circuit.

The data line driving circuit 101 is based on a power supply supplied from an external control circuit, a reference clock signal, and the like.
In accordance with the timing at which the scanning line driving circuit 104 applies the scanning signal, for example, for each of the six image signal lines 304, the sampling circuit driving signal is sent to the sampling circuit 301 for each data line 35 for the sampling circuit driving signal line 3.
06 and sequentially supplied at a predetermined timing.

The precharge circuit 201 includes a TFT 202
Is provided for each data line 35, the precharge signal line 204 is connected to the source electrode of the TFT 202,
The precharge circuit drive signal line 206 is connected to the gate electrode of the TFT 202. Then, a precharge signal (N
RS) is supplied at a predetermined voltage necessary to write the image signal (VID1 to VID6) at a timing preceding the image signals (VID1 to VID6) for each data line 35 via the precharge circuit drive signal line 206. The precharge circuit drive signal (NR
G) is supplied. The precharge circuit 201 preferably supplies a precharge signal (image auxiliary signal) corresponding to pixel data of an intermediate gradation level.

The sampling circuit 301 includes a TFT 302
Are provided for each data line 35, the image signal line 304 is connected to the source electrode of the TFT 302, and the sampling circuit drive signal line 306 is connected to the gate electrode of the TFT 302. Then, through the image signal line 304, six parallel image signals (VID1 to VID6)
Are input, these image signals (VID1 to VID
6) is sampled. When a sampling circuit drive signal is input from the data line drive circuit 101 via the sampling circuit drive signal line 306, the image signals sampled for each of the six image signal lines 304 are sequentially applied to the data lines 3. . That is, the data line driving circuit 101 and the sampling circuit 301 are connected to the image signal line 3
The configuration is such that parallel image signals (VID1 to VID6) expanded from the six phases input from 04 are supplied to the data lines 35. In the present embodiment, the data line 35 is set to 1
The method of sequentially selecting the data for each book has been described. For example, the sampling circuits 301 connected to the six adjacent data lines 35 are simultaneously selected and sequentially transferred for each group of the six data lines 35. The method may be used. Data line 3
The selection of 5 may be such that adjacent two, three,..., Five or seven or more are simultaneously selected. Further, the number of phase expansions of the image signal supplied to the data line 35 is not limited to six, but may be five or less if the writing characteristics of the TFT 302 constituting the sampling circuit 301 are good, or if the dot frequency of the image signal is high. For example, the number of phases may be increased to seven or more. On this occasion,
Needless to say, image image input signal lines are required at least for the number of phase expansions of image signals.

In the present embodiment, in particular, the TFT 30 provided in each pixel and the TFT included in the precharge circuit 201
TFT 30 included in 202 and sampling circuit 301
Light-shielding layers 3 (described later) are provided below the respective 2. Therefore, even if return light or the like enters from the side of the TFT array substrate 1, before the light enters the TFTs 30, 202, and 302, the return light or the like is formed by the light-shielding layers 3 formed at positions opposed to these. It is shaded. Therefore, T
In the FTs 30, 202, and 302, a situation in which a photocurrent is generated due to a photoelectric conversion effect and transistor characteristics are degraded is prevented beforehand, and a defect such as flicker or crosstalk that significantly impairs image quality is not generated. The specific layer configuration of the light shielding layer 3 will be described later.

In this embodiment, the TFTs 30 and 20 are used.
The light-shielding layer 3 formed at least under the channel region of the gate electrodes 2 and 302 is electrically connected to a constant potential line such as a ground potential. This is because TFTs 30, 202 and 30
This is for preventing a change in transistor characteristics caused by the occurrence of an unstable potential difference between the respective terminals of the second transistor. As the constant potential line, for example, a power supply of a positive potential or a negative potential supplied to the data line driving circuit 101, the scanning line driving circuit 104, or the like, or a wiring for supplying a counter electrode potential to the counter substrate 2 is electrically connected. You may. As shown in FIG. 1, a constant potential line 501 extending from a negative potential power source of the scanning line driving circuit 104 or the like.
Are electrically connected to the light shielding layer 3 around the screen display area. Further, it may be shared with the constant potential line 501 supplied to the capacitance line 31 'for forming the storage capacitance of the pixel. With such a configuration, only one wiring is required, which is advantageous when a space for forming a peripheral circuit is widened or when the size of the liquid crystal device is reduced. Further, since a dedicated external input terminal is not required, a sufficient space can be provided, and the cost of the mounting member can be reduced. However, it goes without saying that a constant potential may be supplied by providing a dedicated external input terminal and wiring.

Further, as described above, the precharge circuit 201
And the sampling circuit 301 are shielded from the return light from the TFT array substrate 1 side.
There is no need to arrange these circuits around the TFT array substrate 1 housed in a light-shielding case as in the related art. Therefore, in the present embodiment, as shown by the hatched area in FIG. 1 and as shown in FIGS. 2 and 3, the precharge circuit 201 and the sampling circuit 301
Is provided on the TFT array substrate 1 at a position opposing the light-shielding peripheral partition 53 formed in the TFT array substrate 1. On the other hand,
The data line driving circuit 101 and the scanning line driving circuit 104
It is provided on a narrow and elongated peripheral portion of the TFT array substrate 1 not facing the liquid crystal layer 50.

2 and 3, on the TFT array substrate 1, a screen display area defined by a plurality of pixel electrodes 11 (ie, a liquid crystal on which an image is actually displayed due to a change in the alignment state of the liquid crystal layer 50). A seal member 52 made of a photocurable resin is provided along the screen display area as an example of a seal member that surrounds the liquid crystal layer 50 by bonding the two substrates together around the (area of the device). Then, between the screen display area on the counter substrate 2 and the sealing material 52,
A light-shielding peripheral parting 53 is provided.

When the TFT array substrate 1 is later placed in a light-shielding case provided with an opening corresponding to the screen display area, the peripheral parting 53 may cause the screen display area to be out of the case due to a manufacturing error or the like. A strip-shaped light-shielding material having a width of 500 μm or more around the screen display area so as not to be hidden by the edge of the opening, that is, to allow a shift of about several hundred μm with respect to the case of the TFT array substrate 1, for example. It is formed from Such a light-shielding peripheral partition 53 is formed on the opposing substrate 2 by sputtering, photolithography, and etching using a metal material such as Cr (chromium), Ni (nickel), or Al (aluminum). Alternatively, carbon or Ti
It is formed from a material such as resin black in which (titanium) is dispersed in a photoresist.

The data line driving circuit 101 and the mounting terminals 102 are provided along the lower side of the screen display area in the area outside the seal material 52, and the scanning line driving circuit is provided along the left and right sides of the screen display area. A circuit 104 is provided. Further, a plurality of wirings 105 for connecting the scanning line driving circuits 104 provided on both sides of the screen display area are provided on an upper side of the screen display area. At least one corner of the counter substrate 2 is provided with a silver dot 106 made of a conductive material for establishing electrical conduction between the TFT array substrate 1 and the counter substrate 2. And sealing material 5
The counter substrate 2 having substantially the same contour as the sealing material 52
To the TFT array substrate 1.

The precharge circuit 201 and the sampling circuit 301 are basically AC driven circuits. Therefore, even if the precharge circuit 201 and the sampling circuit 301 are provided in the portion of the TFT array substrate 1 facing the liquid crystal layer 50 surrounded by the sealing material 52 and sandwiched between the two substrates, the liquid crystal layer 50 is not There is no problem of deterioration. On the other hand, the data line driving circuit 10
1 and the scanning line driving circuit 104 are provided on the periphery of the TFT array substrate 1 which does not face the liquid crystal layer 50. Therefore, it is possible to prevent a DC voltage component from the data line driving circuit 101 and the scanning line driving circuit 104, which are DC-driven in particular, from leaking and being applied to the liquid crystal layer 50 beforehand.

By providing the precharge circuit 201 and the sampling circuit 301 below the peripheral parting 53, the scanning line driving circuit 104 and the data line driving circuit 101 are provided.
Can be formed with a margin in the peripheral portion of the TFT array substrate 1, and it becomes easy to design these peripheral circuits so as to meet specific specifications. In addition, the precharge circuit 2 is located below the peripheral parting 53 which is a so-called dead space.
By providing the sampling circuit 301 and the sampling circuit 301, the effective display area of the liquid crystal device 200 is not reduced.

On the other hand, since the peripheral parting 53 is light-shielding, light-shielding means for projecting light or the like incident from the counter substrate 2 is provided on the precharge circuit 201 and the sampling circuit 301 (ie, the TFTs 202 and 302). There is no need to provide it separately. On the other hand, the light shielding layer serves as the precharge circuit 201 or the sampling circuit 301 (that is, the TFT 202).
And 302) at least below the channel region, so that the return light or the like incident from the side of the TFT array substrate 1
(That is, light can be shielded before reaching the TFTs 202 and 302). Thereby, the TFT 20 of the precharge circuit 201
2, or at least the channel region of the TFT 302 of the sampling circuit 301 is not irradiated with light. Therefore, a photocurrent is generated by a photoelectric conversion effect in this region, and the transistor characteristics of the TFTs 202 and 302 are not deteriorated. Therefore, the present embodiment has an advantage that light can be reliably blocked no matter which side of the liquid crystal device is incident on the liquid crystal device, and it is possible to eliminate defects such as flicker and crosstalk that significantly degrade image quality.

In addition, since the precharge circuit 201 and the sampling circuit 301 are not formed in the portion of the TFT array substrate 1 facing the sealing material 52, the TFTs 202 and 302 constituting these circuits are mixed in the sealing material 52. There is no risk of destruction by the spacers, and furthermore, light can be sufficiently irradiated from both substrate sides in the step of photo-curing the sealing material 52.

As shown in FIG. 1, in this embodiment, the plurality of data lines 35 are supplied with an image signal from one end on the lower side of the screen display area and a precharge signal from the other end on the other side. Supplied. Therefore, the precharge circuit 2
01 is a data line driving circuit 1 for supplying an image signal.
01 and the sampling circuit 301 can be provided on the opposite side of the screen display area, and the space below the peripheral partition 53 can be effectively used in a well-balanced manner.

Next, a specific circuit configuration of the TFTs 202 and 302 constituting the precharge circuit 201 and the sampling circuit 301 will be described with reference to FIGS. 4 and 5, respectively. FIG. 4 shows the TF of the precharge circuit 201.
FIG. 4 is a circuit diagram showing various TFTs constituting T202;
FIG. 5 is a circuit diagram showing various TFTs constituting the TFT 302 of the sampling circuit 301.

As shown in FIG. 4A, the TFT 202 (see FIG. 1) of the precharge circuit 201 is an N-channel type TFT.
It may be composed of an FT 202a, may be composed of a P-channel TFT 202b as shown in FIG. 4 (2), or may be composed of an N-channel TFT and a P-channel TFT as shown in FIG. 4 (3). It may be composed of a complementary TFT 202c. 4 (1) to 4 (3)
In FIG. 1, the precharge circuit drive signal line 2 shown in FIG.
Precharge circuit drive signal 20 input through
6a and 206b are each a TFT 202a as a gate voltage.
To 202c. The precharge signal NRS input via the precharge signal line 204 also shown in FIG.
c. Precharge circuit drive signal 206 applied as gate voltage to N-channel TFT 202a
a and the precharge circuit drive signal 206b applied as a gate voltage to the P-channel type TFT 202b are mutually inverted signals. Therefore, the precharge circuit 201
Is composed of complementary TFTs 202c, at least two or more precharge circuit drive signal lines 206 are required. When the number of the precharge circuit drive signal lines 206 is two or more as described above, wiring may be concentrated on one side of the screen display area, or in combination with the precharge signal line 204, on both sides of the screen display area. May be wired. Alternatively, for example, the precharge circuit drive signal 206a may be inverted by an inverter before the complementary TFT 202c to form the precharge circuit drive signal 206b.

As shown in FIG. 5A, the TFT 302 (see FIG. 1) of the sampling circuit 301 is an N-channel type TFT.
It may be composed of an FT 302A, a P-channel TFT 302B as shown in FIG. 5B, or a complementary TFT 302C as shown in FIG.
May be configured. It should be noted that FIG.
In (3), the image signal VID input via the image signal line 304 shown in FIG.
Input to FTs 302a to 302c. Similarly, sampling circuit drive signals 306a and 306b input from the data line drive circuit 101 shown in FIG. 1 via the sampling circuit drive signal line 306 are used as gate voltages for each TFT.
302a to 302c. Also, in the sampling circuit 301, the precharge circuit 201 described above is used.
As in the case of (1), the sampling circuit drive signal 306 applied as a gate voltage to the N-channel TFT 302a
a and the sampling circuit drive signal 306b applied as a gate voltage to the P-channel TFT 302B are mutually inverted signals. Therefore, the sampling circuit 301
Is composed of complementary TFTs 302C, at least two or more sampling circuit drive signal lines 306 for the sampling circuit drive signals 306a and 306b are required.

(Structure of Liquid Crystal Device) Next, the liquid crystal device 200
FIGS. 6 to 8 show a specific configuration of a liquid crystal device portion included in FIG.
This will be described with reference to FIG. 7 is an enlarged plan view of a region D surrounded by a circle in FIG. 1, and FIG.
2 shows a cross-sectional view taken along line AA ′ of the TFT 30 and a cross-sectional view taken along line BB ′ of the TFT 202 of the precharge circuit 201. In FIG. 6, the scale of each layer and each member is different for each layer and each member in order to make the size recognizable in the drawing.

In the sectional view of FIG.
Represents TF in the portion of the TFT 30 provided for each pixel.
T array substrate 1 and light-shielding layer 3 laminated thereon, first interlayer insulating layer 41, semiconductor layer 32, gate insulating layer 33,
It includes a scanning line 31 (gate electrode), a second interlayer insulating layer 42, a data line 35 (source electrode), a third interlayer insulating layer 43, a pixel electrode 11, and an alignment film 12. The liquid crystal device 200 further includes a counter substrate 2 made of, for example, a glass substrate, and a common electrode 21, an alignment film 22, and a second light-shielding layer 23 laminated thereon. The liquid crystal device 200 further includes a liquid crystal layer 50 sandwiched between these two substrates.

Here, first, of these layers, the TFT
The configuration of each layer except for 30 will be described in order.

At positions opposing the TFTs 30, T
Light shielding layers 3 are provided on the FT array substrate 1 respectively. The light shielding layer 3 is made of Ti (titanium), Cr (chromium),
A metal containing at least one of W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (lead);
Alternatively, it is made of a metal alloy such as metal silicide (for example, tungsten silicide WSi). When the light-shielding film 3 is made of a refractory metal silicide, that is, when silicon is included in the material of the light-shielding layer 3, thermal compatibility with the TFT array substrate 1 and the first interlayer insulating layer 41 containing silicon is improved. .

The light shielding layer 3 is grounded or connected to a constant potential source via a constant potential line 501 via a contact hole 503 as shown in FIG. As the constant potential line 501, wiring such as a power supply supplied to peripheral circuits such as the data line driving circuit 101 and the scanning line driving circuit 104 is preferably extended. Therefore, a change in the potential of the light shielding layer 3 does not adversely affect the switching characteristics and the like of the TFT 30. For example, the light shielding layer 3 may be grounded, or may be connected to the common electrode 21 to
May be applied. However, the light shielding layer 3 may be electrically floating. Further, the light-shielding layer 3 is connected to a storage capacitor (see FIG.
(See Reference).

Further, a first interlayer insulating layer 41 is provided between the light shielding layer 3 and the plurality of TFTs 30. The first interlayer insulating layer 41 is made of, for example, NSG (non-doped silicate glass), PSG (phosphorus silicate glass), BSG
(Borosilicate glass), a silicate glass film such as BPSG (boron phosphorus silicate glass), a silicon nitride film, a silicon oxide film, and the like. Things. Further, the first interlayer insulating layer 41 includes:
By being formed on the entire surface of the TFT array substrate 1, T
It also has a function as a base film for the FT 30. In other words, it has a function of preventing deterioration of the characteristics of the TFT 30 due to roughening of the surface of the TFT array substrate 1 during polishing, dirt remaining after washing, and the like.

Second interlayer insulating layer 42 and third interlayer insulating layer 4
Numeral 3 comprises a silicate glass film such as NSG, PSG, BSG, BPSG, etc., a silicon nitride film, a silicon oxide film or the like.

The pixel electrode 11 is made of, for example, a transparent conductive thin film such as an ITO film (indium tin oxide film). When the liquid crystal device 200 is used for a reflection type liquid crystal device, the pixel electrode 11 may be formed from an opaque material having a high reflectance such as Al.

The alignment film 12 is made of, for example, an organic thin film such as a polyimide thin film, and is subjected to a rubbing treatment so as to have a predetermined pretilt angle and in a predetermined direction.

The common electrode 21 is formed of an ITO film or the like over the entire surface of the counter substrate 2.

The alignment film 22 is made of, for example, an organic thin film such as a polyimide thin film, and is subjected to a rubbing treatment so as to have a predetermined pretilt angle and in a predetermined direction.

The second light-shielding layer 23 is provided in a predetermined region facing the TFT 30 in a metal material such as Cr or Ni, carbon or Ti.
Is formed from a material such as resin black in which is dispersed in a photoresist. The second light-shielding layer 23 not only shields the semiconductor layer 32 of the TFT 30 but also improves the contrast,
It has a function of preventing color mixing of coloring materials.

The liquid crystal layer 50 includes the pixel electrode 11 and the common electrode 2
Liquid crystal is sealed by vacuum suction or the like in a space surrounded by a sealing material 52 (see FIGS. 2 and 3) between the TFT array substrate 1 and the opposing substrate 2 which are disposed so as to face each other. Formed by The liquid crystal layer 50 holds the alignment film 1 in a state where no electric field from the pixel electrode 11 is applied.
A predetermined orientation state is taken by 2 and 22. Liquid crystal layer 50
Is composed of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material 52 includes two substrates 1 and 2
Are bonded to each other at the periphery thereof, for example, an adhesive made of a photo-curable resin or a thermo-curable resin, and a spacer for mixing the distance between the two substrates to a predetermined value is mixed.

Next, the structure of each layer of the TFT 30 will be described in order.

The TFT 30 includes a scan line 31 (gate electrode), a semiconductor layer 32 in which a channel is formed by an electric field from the scan line 31, a gate insulating layer 33 that insulates the scan line 31 from the semiconductor layer 32, and a semiconductor layer 32. It has a source region 34 formed, a data line 35 (source electrode), and a drain region 36 formed in the semiconductor layer 32. A corresponding one of the plurality of pixel electrodes 11 is connected to the drain region 36. The source region 34 and the drain region 36 are formed by doping the semiconductor layer 32 with a predetermined concentration of N-type or P-type dopant depending on whether an N-type or P-type TFT is formed, as described later. Is formed. The N-type channel TFT has an advantage that the operation speed is high, and the TFT which is a pixel switching element
Often used as 30.

The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which ions are not implanted into the low-concentration source / drain regions in the LDD structure, or form the source region 34 and the drain region 36 in a self-aligned manner using the gate electrode 31 as a mask. You may. It may be a self-aligned TFT. In the present embodiment, the TFT 30 has a single gate structure. However, the TFT 30 may have a dual gate structure in which two gate electrodes 31 are arranged in series between the source region 34 and the drain region 36. You may arrange three or more. With such a structure, the leakage current when the TFT 30 is turned off is reduced, so that the image quality does not deteriorate.

The scanning lines 31 (gate electrodes) are preferably formed from a polysilicon film. Alternatively, it may be formed from a refractory metal film such as W or Mo or a metal silicide film. In this case, if the scanning line 31 (gate electrode) is arranged as a light-shielding film corresponding to a part or the whole of the area covered by the second light-shielding layer 23, the second light-shielding property of the metal film or the metal silicide film is obtained. Some or all of the layer 23 can be omitted. In this case, in particular, there is an advantage that the pixel aperture ratio can be prevented from lowering due to misalignment between the opposing substrate 2 and the TFT array substrate 1.

The gate insulating layer 33 is made of a relatively thin thermal oxide film. When a large substrate of 8 inches or more is used, the thermal oxidation time is shortened, the thermal oxide film is thinned, and a high-temperature silicon oxide film ( HTO film) and silicon nitride film
Deposition may be performed by a VD method or the like to form a multilayer gate insulating film structure of two or more layers.

Generally, a semiconductor layer 32 in which a channel is formed
Is that when light enters, a photocurrent is generated due to the photoelectric conversion effect of the polysilicon film, and the transistor characteristics of the TFT 30 are deteriorated.
For the light such as the projection light from the side, each TF
Since the plurality of second light-blocking layers 23 are formed at positions facing the respective T30, the projected incident light is prevented from entering at least the channel region of the semiconductor layer 32.
Incidentally, the second light-shielding layer 23 formed on the counter substrate 2 may be formed on the TFT array substrate 1. In this case, if Ti (titanium) or the like is formed between the data line 35 and the pixel electrode 11 via an insulating film, the second light shielding layer 23 on the counter substrate 2 can be omitted. Therefore, the counter substrate 2 and the TF
Since there is no need to consider the alignment accuracy when assembling with the T-array substrate 1, it is possible to provide a liquid crystal device having no variation in transmittance.

The data line 35 (source electrode) may be formed of a transparent conductive thin film such as an ITO film as in the case of the pixel electrode 11. Alternatively, it may be formed from a low-resistance metal such as Al or a metal silicide.

In addition to or instead of this, the scanning line 31
If the data line 35 (source electrode) is formed from an opaque metal thin film such as Al so as to cover the gate electrode of the TFT 30 composed of a part of the semiconductor layer 32 from above, at least the semiconductor layer 32 may be used together with the second light shielding layer 23 or alone. Irradiation of incident light (that is, light from above in FIG. 6) to the channel region can be effectively prevented. Here, the data line 35 may be formed so as to cover at least the junction between the channel region of the semiconductor layer 32 and the source / drain regions 34 and 36 and the light-shielding layer 3 disposed below the junction in the TFT 30. . This is because light incident from the counter substrate 2 side is
This is to prevent the channel region from being reflected and reflected to the channel region. On the other hand, with respect to light such as return light from the TFT array substrate 1 side, since a plurality of light shielding layers 3 are formed on the TFT array substrate 1 at positions opposed to the respective TFTs 30, the return light etc. 32 is prevented from entering at least the channel region.

In the second interlayer insulating layer 42, a contact hole 37 leading to the source region 34 and a contact hole 38 leading to the drain region 36 are respectively formed. The data line 35 (source electrode) is electrically connected to the source region 34 via a contact hole 37 to the source region 34. Further, a contact hole 38 to the drain region 36 is formed in the third interlayer insulating layer 43. Contact hole 38 to this drain region 36
, The pixel electrode 11 is electrically connected to the drain region 36. The above-described pixel electrode 11 is provided on the upper surface of the third interlayer insulating layer 43 configured as described above.

Here, as shown in the plan view of FIG. 7, the pixel electrodes 11 configured as described above are arranged in a matrix on the TFT array substrate 1, and the TFT 30 is arranged adjacent to each pixel electrode 11. The data line 35 (source electrode) and the scanning line 31 (gate electrode) are provided along the vertical and horizontal boundaries of the pixel electrode 11. Also,
It can be seen that the light shielding layer 3 covers the channel portion and the like of the TFT 30 from below. In FIG. 7, a constant potential line 501 extending from a negative potential power supply of the scanning line driving circuit 104 located in the C direction is provided up to the immediate vicinity of the screen display area. Here, the light shielding layer 3 is electrically connected via the contact hole 503. The light-shielding layer 3 is provided below and in parallel with the scanning lines 31. Also, the precharge circuit 201
A light-shielding layer 3 "is formed so as to cover at least a channel region of the semiconductor layer 32" of the TFT 202, and is wired in parallel with the scanning line 31 from one end to the opposite end of the screen display area. Further, the transistor is electrically connected to the constant potential line 501 through the contact hole 503 so that the transistor characteristics are not deteriorated. Further, by forming the constant potential line 501, the precharge circuit 201, the precharge circuit drive signal line 206, the precharge signal line 204, and the like under the peripheral partition 53, which is a dead space in the related art, an area where the peripheral circuit is formed is provided. It can be enlarged and the size of the liquid crystal device can be reduced. FIG. 7 is a diagram for simplifying the matrix arrangement of the pixel electrodes 11 and the like, for the sake of explanation, and actual electrodes are provided between and above the interlayer insulating layers via contact holes and the like. As can be seen from FIG. 6, it has a three-dimensionally more complicated configuration.

Referring again to FIG. 6, the pixel electrodes 11 are provided with storage capacitors 70, respectively. This storage capacity 70 is
More specifically, the first storage capacitor electrode 32 ′ extending from the drain region 36 of the semiconductor layer 32, the insulating layer 33 ′ formed in the same step as the gate insulating layer 33, and the scanning line 31 in the same step The formed capacitor line 31 ′ (second storage capacitor electrode), the second and third interlayer insulating layers 42 and 43,
The pixel electrode 11 includes a part of the pixel electrode 11 opposed to the capacitance line 31 ′ via the second and third interlayer insulating layers 42 and 43. Since the storage capacitor 70 is provided in this manner, high-definition display can be performed even when the duty ratio is small. In addition, as shown in FIG.
By electrically connecting the constant potential line 501 and the capacitance line 31 ′ extending from 4 through the contact hole 502, it can be used as a constant potential supply source. As a result, the light shielding layer 3 and the constant potential line can be shared, so that only one wire is required.
This is advantageous in wiring routing. Furthermore, since it is not necessary to provide a dedicated external input terminal, the number of input terminals can be reduced.

In FIG. 6, a TFT 202 (see FIG. 1) of a precharge circuit 201 is provided for each data line 35 in the liquid crystal device 200. More specifically, the TFT 202 includes a semiconductor layer 32 ″ formed in the same step as the semiconductor layer 32, a gate insulating layer 33 ″ formed in the same step as the gate insulating layer 33, and a scanning line 31 (gate electrode). A precharge circuit drive signal line 206 (gate electrode) formed by the same process is provided. In the semiconductor layer 32 ″, similarly to the case of the TFT 30, the source region 3
4 "and a drain region 36" are provided, and a data line 35 is connected to the drain region 36 "through a contact hole 38" formed in the second interlayer insulating layer 42.
Further, a precharge signal line 204 is connected to the source region 34 ″ through a contact hole 37 ″ formed in the second interlayer insulating layer 42. Then, at a position facing the TFT 202 having such a layer structure, the light-shielding layer 3 ″ formed by the same process as the light-shielding layer 3 on the TFT array substrate 1 so as to cover at least below the channel region of the semiconductor layer 32 ″. Is provided. Moreover, the TFT 202
Is provided on the TFT array substrate 1 at a position facing the light-shielding peripheral partition 53 provided on the counter substrate 2. This makes it possible to form a peripheral circuit immediately near the opening area through which light passes.

As shown in the plan view of FIG. 7, in the precharge circuit 201, a precharge signal line 204, a precharge circuit drive signal line 206 and a data line 35 are arranged in parallel. Note that the pattern layout does not necessarily need to be arranged in parallel. The precharge signal line 204 is electrically connected to the source region of each TFT 202 via each contact hole 37 ", and the data line 35 is electrically connected to the drain region of each TFT 202 via each contact hole 38". ing. The precharge circuit drive signal line 206 serves as a gate electrode of the TFT 202,
A channel portion connecting these source region and drain region is opposed to each other with a gate insulating film interposed therebetween. A light-shielding layer 3 ″ is provided so as to cover the channel portion together with the gate electrode in a plan view.

Although not shown in FIG. 7, the TFT 302 (see FIG. 1) of the sampling circuit 301 is configured similarly to the TFT 202 of the precharge circuit 201, and the TFT array substrate is located at a position facing the TFT 302. 1 is provided with a light-shielding layer 3 ″.
The FT 302 is located at a position facing the light-shielding peripheral partition 53 provided on the counter substrate 2.
It is provided above.

In this embodiment, in particular, the TFT 30 is a TFT using a polysilicon film as a semiconductor layer.
In the same thin film forming process when forming the semiconductor device 30, the sampling circuit 201, the precharge circuit 301, and the data line driving circuit 1
01, which is advantageous in manufacturing because peripheral circuits such as the scanning line driving circuit 104 can be formed. For example, the data line driving circuit 10
1 and the scanning line driving circuit 104 are shown in FIGS.
As in the case of the precharge circuit 201 and the sampling circuit 301 shown in (3), the N-channel TFT and the P
Plural TFs of complementary structure composed of channel type TFT
From T, it is formed in a peripheral portion on the TFT array substrate 1.

As described above, in the present embodiment, the TFT 3
Since the light-shielding layer 3 is provided at least below the channel regions of the channels 0, 202, and 302, as described above, adverse effects due to return light and the like are reduced, so that the transistor characteristics of the TFT 30 are improved, and finally, , Liquid crystal device 200
Thereby, a high-contrast, high-quality image can be displayed.

Although not shown in FIG. 6, for example, a TN (twisted nematic) mode is provided on the side of the opposite substrate 2 on which the projected light is incident and on the side of the TFT array substrate 1 on which the projected light is emitted. Depending on operation modes such as STN (super TN) mode, D-STN (double-STN) mode, and normally white mode / normally black mode, a polarizing film, a retardation film,
Polarizing means and the like are arranged in a predetermined direction.

Since the liquid crystal device 200 described above is applied to a color liquid crystal projector, three liquid crystal devices 20 are used.
0 is used as a light valve for RGB, and light of each color separated through a dichroic mirror for RGB color separation is incident on each liquid crystal device as incident light. Therefore, in each embodiment, the counter substrate 2 is not provided with a color filter. However, even in the liquid crystal device 200, the black matrix 2
An RGB color filter may be formed on the opposing substrate 2 together with its protective film in a predetermined area facing the pixel electrode 11 where the pixel electrode 3 is not formed. In this way, the liquid crystal device of the present embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector. Further, a micro lens may be formed on the counter substrate 2 so as to correspond to one pixel. In this case, a bright liquid crystal device can be realized by improving the efficiency of collecting incident light. Furthermore, a dichroic filter that produces RGB colors using light interference may be formed by depositing many layers of interference layers having different refractive indices on the counter substrate 2. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

In the liquid crystal device 200, the incident light is made incident from the side of the counter substrate 2 as in the related art, but the light shielding layer 3
And 3 ″, the incident light may be made incident from the TFT array substrate 1 side and emitted from the counter substrate 2 side. That is, even if the liquid crystal device 200 is attached to the liquid crystal projector in this manner. Semiconductor layer 3 for channel formation
Light can be prevented from being incident on at least the channel region of the TFT array substrate 2 and 32 ", and a high-quality image can be displayed. Here, conventionally, reflection on the back surface side of the TFT array substrate 1 is prevented. In order to achieve this, it is necessary to separately arrange an anti-reflection AR-coated polarizing means or attach an AR film.
Since the light-shielding layer 3 is formed between the surface of the array substrate 1 and at least the channel region of the semiconductor layer layers 32 and 32 ″, such an AR-coated polarizing means or AR film can be used. Therefore, it is not necessary to use a substrate obtained by subjecting the substrate 1 itself to an AR treatment.Accordingly, according to the present embodiment, it is possible to reduce the material cost and to reduce the yield due to dust, scratches and the like when attaching the polarizing means. It is advantageous.

The switching element of the liquid crystal device 200 has been described as a TFT having a normal staggered structure or a coplanar structure. Is valid.

Further, in the liquid crystal device 200, the liquid crystal layer 50 is made of, for example, a nematic liquid crystal. However, if a polymer dispersed liquid crystal in which the liquid crystal is dispersed as fine particles in a polymer is used, the alignment films 12 and 22 can be formed. In addition, the above-described polarizing film, polarizing means, and the like are not required, and the advantages of higher brightness and lower power consumption of the liquid crystal device due to an increase in light use efficiency can be obtained. Further, by forming the pixel electrode 11 from a metal film having a high reflectivity such as Al, when the liquid crystal device 200 is applied to a reflection type liquid crystal device, the SH in which the liquid crystal molecules are almost vertically aligned without applying a voltage is applied. (Super homeotropic) type liquid crystal may be used. Furthermore, in the liquid crystal device 200, the common electrode 21 is provided on the side of the counter substrate 2 so as to apply a vertical electric field (vertical electric field) to the liquid crystal layer 50.
However, the pixel electrode 11 is composed of a pair of electrodes for generating a horizontal electric field so as to apply a parallel electric field (horizontal electric field) to the liquid crystal layer 50 (that is, a vertical electric field is provided on the counter substrate 2 side). It is also possible to provide an electrode for generating a lateral electric field on the side of the TFT array substrate 1 without providing an electrode for generation.
The use of the horizontal electric field is advantageous in widening the viewing angle as compared with the case of using the vertical electric field. In addition, the present embodiment can be applied to various liquid crystal materials (liquid crystal phases), operation modes, liquid crystal alignment, a driving method, and the like.

(Operation of Inspection Circuit) In the above-described embodiment, the precharge circuit 201 and the sampling circuit 301 are provided. An inspection circuit having a TFT for performing a predetermined inspection for inspecting the quality, defect, and the like of the liquid crystal device may be provided. In FIG.
An example of such an inspection circuit will be described.

Referring to FIG. 9, the inspection circuit 401 includes a plurality of TFTs 402. Drive signal lines 403a and 403b for supplying test circuit drive signals TX1 and TX2, respectively, are connected to the gate of the TFT 402. The inspection signals CX1 to CX are provided to the source of the TFT 402.
Test signal lines 404a to 404d for supplying
Is connected. The data line 35 is connected to the drain of the TFT 402. During the inspection,
Inspection circuit drive signals TX1 and TX2 cause TFT 402
Are selectively turned on and off, and a test signal CX1 having a predetermined voltage is provided.
To CX4, a precharge signal of a predetermined voltage and an image signal of a predetermined voltage are applied. Then, the inspection signal lines 404a to
The value of the current flowing through 404d is measured and compared with the current value of a defect-free product obtained empirically or theoretically in advance.
As a result, by applying these applied voltages in a predetermined combination and measuring the current, for example, inspection of disconnection between wirings, inspection of short-circuit (short circuit) between wirings, precharge circuit 201 and sampling circuit 301
Inspection of circuit leaks and the like can be performed relatively easily.

As described above, even when the inspection circuit is provided,
If the light-shielding layer 3 is provided at least below the channel region of the TFT included in the inspection circuit, and the inspection circuit is provided between the light-shielding layer 3 and the peripheral partition 53, light from both substrates is shielded. Therefore, the transistor characteristics do not deteriorate due to light. Therefore, the image quality is not significantly reduced due to the leak current from the inspection circuit not used when displaying the screen normally. In addition to this,
Scan line driving circuit 104 and data line driving circuit 101 are TF
The liquid crystal device can be formed with a margin around the T-array substrate 1 without causing a reduction in the effective display area. Instead of providing the inspection circuit as shown in FIG. 9, a precharge circuit which also has the function of the inspection circuit as shown in FIG. 9 and is also used as an inspection circuit may be provided.

Further, instead of or in addition to the precharge circuit 201 and the sampling circuit 301, below the peripheral parting line 53, a data line driving circuit 101 and a scanning line driving circuit for operating the liquid crystal device as shown in FIG. A peripheral circuit having a voltage holding TFT such as 104 may be provided. All or some of these peripheral circuits are formed so as to overlap the peripheral parting 53. With such a configuration, if the seal region is provided outside the peripheral circuit, that is, on the outermost periphery of the TFT array substrate 1, the peripheral circuit region can be expanded. Also in this case, the light shielding layer 3 is provided at least below the channel region of the TFT included in the peripheral circuit. If the peripheral circuit is provided between the light-shielding layer 3 and the peripheral partition 53 as described above, light is shielded from light from both substrates, so that the transistor characteristics are deteriorated by light (for example, the holding voltage is leaked). There is no). In particular, if such a peripheral circuit is an AC-driven circuit, the problem of deterioration of the liquid crystal layer 50 due to the above-described application of the DC voltage does not occur even if the peripheral circuit is disposed below the peripheral partition 53.

Further, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 1, for example, a driving LSI mounted on a TAB (tape automated bonding substrate) is mounted on the TFT array substrate. 1 may be electrically and mechanically connected via an anisotropic conductive film provided in a peripheral portion.

(Manufacturing Process) Next, the liquid crystal device 20 including the precharge circuit 201 and the sampling circuit 301
0 will be described with reference to FIGS.

First, the formation of the TFT 30 in which the light shielding layer 3 is provided on the TFT array substrate 1 will be described with reference to FIGS.

As shown in step (1) of FIG. 10, a TFT array substrate 1 such as a quartz substrate, hard glass, or silicon substrate is prepared. Here, anneal treatment is preferably performed in an inert gas atmosphere such as N ₂ (nitrogen) and a high temperature of about 900 to 1300 ° C.
The pre-processing is performed so that distortion generated in the T array substrate 1 is reduced. That is, the TFT array substrate 1 is preliminarily heat-treated at the same temperature or a higher temperature in accordance with the highest temperature at the highest temperature in the manufacturing process.

The TFT array substrate 1 thus processed
Ti, Cr, W,
A metal containing at least one of Ta, Mo and Pd, or a metal alloy such as metal silicide;
A light-shielding film having a thickness of about 5000 ° is formed. Subsequently, a mask corresponding to the pattern of the light shielding layer 3 is formed on the formed light shielding film by photolithography, and the light shielding film is etched through the mask to form the light shielding layer 3.

The light-shielding layer 3 is formed so as to cover at least the channel forming region, the source region 34 and the drain region 36 in the semiconductor layer 32 of the TFT 30 as viewed from the back surface of the TFT array substrate 1.

Next, as shown in step (2) of FIG. 10, a TEOS (tetra-ethyl-ortho-silicate) gas and a TEB (tetra- Ethyl boat rate) gas, T
The first interlayer insulating layer 41 made of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed by using an MOP (tetra methyl oxy phosphate) gas or the like. The thickness of the first interlayer insulating layer 41 is preferably about 500-15000 °. Alternatively, after forming a thermal oxide film, a high-temperature silicon oxide film (HTO film) or a silicon nitride film is further deposited by a low pressure CVD method or the like to a relatively small thickness of about 500 ° and a thickness of about 2 mm.
The first interlayer insulating layer 41 having a multilayer structure of 000 ° may be formed. Further, SOG (spin-on glass: spun glass) is spin-coated on or in place of such a silicate glass film, or CMP (Chemical).
By performing a Mechanical Polishing process, a flat film may be formed. In this way, if the upper surface of the first interlayer insulating layer 41 is flattened by spin coating or CMP, the TFT
The advantage that 30 can be easily formed is obtained.

The first interlayer insulating layer 41 has a thickness of about 900
By performing an annealing process at a temperature of ° C., contamination may be prevented and planarization may be performed.

Next, as shown in step (3) of FIG. 10, a flow rate of about 400 to 550 ° C., preferably about 500 ° C. is applied on the first interlayer insulating layer 41 in a relatively low temperature environment.
An amorphous silicon film is formed by low-pressure CVD (for example, CVD at a pressure of about 20 to 40 Pa) using a monosilane gas, a disilane gas, or the like at 600 cc / min.
Thereafter, in a nitrogen atmosphere at about 600 to 700 ° C. for about 1 hour.
By performing an annealing treatment for 10 to 10 hours, preferably 4 to 6 hours, the polysilicon film is formed to about 500 to 200 hours.
The solid phase is grown to a thickness of 0 °, preferably about 1000 °. At this time, when an N-channel type TFT is formed, Sb (antimony), As (arsenic), P
A dopant of a group V element such as (phosphorus) may be slightly doped by ion implantation or the like. In the case where the TFT is a P-channel type, an Al (aluminum), B (boron), Ga (gallium), In (indium) or other II
A group I element dopant is slightly doped by ion implantation or the like. Note that a polysilicon film may be directly formed by a low pressure CVD method or the like without passing through the amorphous silicon film. Alternatively, a polysilicon film may be formed by implanting silicon ions into a polysilicon film deposited by a low-pressure CVD method or the like to make the polysilicon film once amorphous (amorphized), and then recrystallize by annealing or the like.

Next, as shown in step (4) of FIG. 10, the semiconductor layer 32 is thermally oxidized at a temperature of about 900 to 1300 ° C., preferably about 1000 ° C.
Forming a thermal oxide film having a relatively thin thickness of about 00 .ANG., And further depositing a high-temperature silicon oxide film (HTO film) or a silicon nitride film to a relatively thin thickness of about 500 .ANG.
A gate insulating layer 33 having a multilayer structure is formed. As a result, the thickness of the semiconductor layer 32 is about 300 to 1500 °, preferably about 350 to 450 °, and the thickness of the gate insulating layer 33 is about 200 to 1500 °,
Preferably, it has a thickness of about 300 °. By shortening the high-temperature thermal oxidation time in this way, warpage due to heat can be prevented particularly when a large substrate of about 8 inches is used. However, the gate insulating layer 33 having a single-layer structure may be formed only by thermally oxidizing the semiconductor layer 32.

Next, as shown in step (5) of FIG. 10, low-pressure CVD is performed on the semiconductor layer 32 via the gate insulating layer 33.
After a polysilicon film is deposited by a method or the like, a gate electrode 31 is formed by a photolithography process, an etching process, or the like.
(Scan lines) are formed.

However, instead of the polysilicon film, the gate electrode 31 (scanning line) may be formed in a multilayer structure by combining a refractory metal film or a metal silicide film with a p-Si film.
In this case, the gate electrode 31 (scanning line) is
By arranging as a light-shielding film corresponding to part or all of the region covered by 3, it is possible to omit part or all of the second light-shielding layer 23 due to the light-shielding properties of the metal film or the metal silicide film. In this case, in particular, there is an advantage that the pixel aperture ratio can be prevented from lowering due to misalignment between the opposing substrate 2 and the TFT array substrate 1.

Next, as shown in step (6) of FIG.
When the FT 30 is an N-channel TFT having an LDD structure, first, in the semiconductor layer 32, in order to form a low-concentration doped region constituting a part of the source region 34 and the drain region 36 adjacent to the channel side, respectively. Using the gate electrode 31 as a diffusion mask, a dopant of a group V element such as P is used at a low concentration (for example, P ions are added at 1 to 3 × 10 ¹³ / c).
m ² ), followed by a gate electrode 3
The resist layer is formed on the gate electrode 31 with a mask wider than 1.
After being formed thereon, a dopant of a group V element such as P is also added at a high concentration (for example, P ions are formed at 1 to 3 × 10 ¹⁵ / cm 3).
Doping at a dose of ² ). Further, the TFT 30 is set to P
In the case of the channel type, the source region 3
4 and drain region 36 to form II
Doping is performed using a group I element dopant. When the LDD structure is used as described above, an advantage that the short channel effect can be reduced can be obtained. Note that doping may not be performed in two stages of low concentration and high concentration. For example,
A TFT having an offset structure may be used without performing low-concentration doping, and a self-aligned TFT may be formed by an ion implantation technique using P ions, B ions, or the like using the gate electrode 31 as a mask.

In parallel with these steps, an N-channel type T
Data line drive circuit 101 and scan line drive circuit 10 having complementary structure composed of FT and P-channel TFT
4 is formed on the peripheral portion of the TFT array substrate 1. Thus, since the TFT 30 is a polysilicon TFT,
In the same step when forming the TFT 30, the data line driving circuit 1
01 and the scanning line driving circuit 104 can be formed,
This is advantageous in manufacturing.

Next, as shown in the step (7) of FIG. 11, the NSG, PSG, and the like are used to cover the gate electrode 31 (scanning line) using, for example, normal pressure or reduced pressure CVD, TEOS gas, or the like.
A second interlayer insulating layer made of a silicate glass film such as SG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the second interlayer insulating layer 42 is about 5
000 to 15000 ° is preferred. In order to activate the source region 34 and the drain region 36, about 100
After annealing at 0 ° C. for about 20 minutes, a contact hole 37 for the source electrode 35 (data line) is formed by dry etching such as reactive etching or reactive ion beam etching. At this time, there is an advantage that opening the contact hole 37 by anisotropic etching such as reactive etching or reactive ion beam etching can make the opening shape almost the same as the mask shape. However, if the dry etching and the wet etching are performed in combination, the contact holes 37 can be formed.
Can be tapered, so that there is an advantage that disconnection at the time of wiring connection can be prevented. Further, a contact hole for connecting the gate electrode 31 (scanning line) to a wiring (not shown) is also formed in the second interlayer insulating layer 42 in the same process as the contact hole 37.

Next, as shown in step (8) of FIG. 11, a low-resistance metal such as Al or a metal silicide is deposited on the second interlayer insulating layer 42 by sputtering or the like for about 10 minutes.
The source electrode 35 is deposited to a thickness of 100 to 5000 に よ り and further subjected to a photolithography process, an etching process, and the like.
(Data lines) are formed.

In this case, the source electrode 35 (data line)
Is disposed as a light-shielding film corresponding to a part or the whole of the region covered by the second light-shielding layer 23, a part or all of the second light-shielding layer 23 is formed by the light-shielding property of a metal film such as Al or a metal silicide film. Can be omitted. In this case, in particular, there is an advantage that the pixel aperture ratio can be prevented from lowering due to misalignment between the opposing substrate 2 and the TFT array substrate 1. Further, a source electrode 35 is formed so as to cover at least the channel region of the semiconductor layer 32, and a source electrode 35 is formed so that incident light is not directly applied to the surface of the light shielding layer 3 disposed below the channel region of the semiconductor layer 32. Cover with 35. Thus, the channel region of the semiconductor layer 32 can be protected from incident light and return light, so that the leakage current of the TFT due to the photoelectric conversion effect of the polysilicon film can be reduced.

Next, as shown in step (9) of FIG. 11, the NS or NS gas is applied to cover the source electrode 35 (data line) using, for example, normal pressure or low pressure CVD, TEOS gas, or the like.
A third interlayer insulating layer 43 made of a silicate glass film such as G, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the third interlayer insulating layer 43 is preferably about 5000-15000 °. Alternatively, instead of or in place of such a silicate glass film, an organic film or SOG (spin-on glass) is spin-coated,
Alternatively, a flat film may be formed by performing a CMP process.

Further, a contact hole 38 for electrically connecting the pixel electrode 11 and the drain region 36 is formed by dry etching such as reactive etching or reactive ion beam etching. At this time, it is better to open the contact hole 38 by anisotropic etching such as reactive etching and reactive ion beam etching.
This has the advantage that the opening shape can be made substantially the same as the mask shape. However, if the dry etching and the wet etching are performed in combination, the contact hole 38 is formed.
Can be tapered, so that there is an advantage that disconnection at the time of wiring connection can be prevented.

Next, as shown in step (10) of FIG.
A transparent conductive thin film such as an ITO film is formed on the third interlayer insulating layer 43 by sputtering or the like for about 500 to 200
The pixel electrode 11 is formed by depositing a thickness of 0 ° and performing a photolithography process, an etching process, and the like. still,
When the liquid crystal device 200 is used for a reflection type liquid crystal device, the pixel electrode 1 is made of an opaque material having high reflectivity such as Al.
1 may be formed.

Subsequently, a coating liquid of a polyimide-based alignment film was applied on the pixel electrode 11 and then rubbed in a predetermined direction so as to have a predetermined pretilt angle, as shown in FIG. An alignment film 12 is formed.

Next, the formation of the TFT 202 portion of the precharge circuit 201 in which the light shielding layer 3 ″ is provided on the TFT array substrate 1 side will be described with reference to FIG.
This will be described with reference to FIG.

The formation of the TFT 202 portion of the precharge circuit 201 is the same as the formation of the TFT 30 portion described with reference to FIGS. 10 and 11 from the step (1) of FIG. 10 to the step (6) of FIG. In the step of forming a thin film. Therefore, the description is omitted.

In this case, the process up to the annealing treatment on the second interlayer insulating layer 42 is the same as the process (7) in FIG.
Thereafter, as shown in step (7) of FIG. 12, a contact hole 37 "for the data line 35 is formed together with a contact hole 37" for the precharge signal line 204 in FIG.
In parallel with the first step (7), it is formed by dry etching such as reactive etching and reactive ion beam etching.

Next, as shown in step (8) of FIG. 12, in the same thin film forming step as step (8) of FIG. 11, A is formed on the second interlayer insulating layer 42 by sputtering or the like.
A low resistance metal such as 1 or metal silicide is deposited. Further, in parallel with the step (8) in FIG. 11, a precharge signal line 204 and a data line 35 each having a predetermined pattern are formed by a photolithography step, an etching step, and the like.

Next, as shown in step (9) of FIG. 12, by the same thin film forming step as step (9) of FIG. 11, silicate glass or the like is used to cover the data lines 35 and the precharge signal lines 204. A third interlayer insulating layer 43 is formed. Then, the transparent conductive thin film such as the ITO film deposited on the third interlayer insulating layer 43 in the thin film forming step of the step (10) in FIG. 11 is completely removed by etching or the like.

The formation of the TFT 302 portion of the sampling circuit 301 in which the light-shielding layer 3 ″ is provided on the TFT array substrate 1 side is described with reference to the TF of the precharge circuit 201 described above.
Since this is the same as the formation of the T202 portion, its description is omitted.

(Electronic Apparatus) Next, an embodiment of an electronic apparatus including the liquid crystal device 200 described in detail above will be described with reference to FIGS.

First, as shown in FIG.
1 shows a schematic configuration of an electronic device provided with.

In FIG. 13, the electronic apparatus includes a display information output source 1000, a display information processing circuit 1002, a driving circuit 1004 including the above-described scanning line driving circuit 104 and data line driving circuit 101, and a pre-configured circuit as described above. Liquid crystal device 20 provided with charge circuit and sampling circuit
0, clock generation circuit 1008 and power supply circuit 1010
It is provided with. The display information output source 1000
ROM (Read Only Memory), RAM (Random Acce
ss Memory), a memory such as an optical disk device, a tuning circuit, and the like, and outputs display information such as an image signal in a predetermined format to the display information processing circuit 1002 based on a clock signal from the clock generation circuit 1008. The display information processing circuit 1002 includes various well-known processing circuits such as an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit. A digital signal is sequentially generated from information, and a driving circuit 1 is generated together with a clock signal CLK.
004. The driving circuit 1004 drives the liquid crystal device 200 by the above-described driving method using the scanning line driving circuit 104 and the data line driving circuit 101. Power supply circuit 10
Reference numeral 10 supplies a predetermined power to each of the above-described circuits. Note that the drive circuit 1004 may be mounted on the TFT array substrate included in the liquid crystal device 200, and in addition, the display information processing circuit 1002 may be mounted.

Next, FIG. 14 to FIG. 18 show specific examples of the electronic device thus configured.

FIG. 14 shows a liquid crystal projector 1100.
Prepares three liquid crystal modules each including a liquid crystal device in which the above-described driving circuit 1004 is mounted on a TFT array substrate, and respectively controls the liquid crystal devices 962R, 962G, and 9G for RGB.
FIG. 15 is a schematic configuration diagram of an optical system of a projection type projector used as 62B, and FIG. 15 is a cross-sectional view taken along the line EE ′ of FIG. The light source device 920 and the uniform illumination optical system 923 described above are adopted as the optical system of the projection display device of this example. Then, the projection display apparatus uses the uniform illumination optical system 9.
A color separation optical system 92 as a color separation unit that separates the light flux W emitted from the light into red (R), green (G), and blue (B).
4, three light valves 925R, 925G, and 925B as modulation means for modulating the color light beams R, G, and B;
A color synthesizing prism 910 as a color synthesizing unit for re-synthesizing the modulated color luminous flux, and a projection surface 10
A projection lens unit 6 is provided as projection means for projecting an enlarged image on the surface of the lens. Further, a light guide system 927 for guiding the blue light flux B to the corresponding light valve 925B is also provided.

The uniform illumination optical system 923 includes two lens plates 921 and 922 and a reflection mirror 931. The two lens plates 921 and 922 are arranged so as to be orthogonal to each other with the reflection mirror 931 interposed therebetween. Uniform illumination optical system 923
The two lens plates 921 and 922 each include a plurality of rectangular lenses arranged in a matrix. The light beam emitted from the light source device 920 is transmitted to the first lens plate 92.
The light is split into a plurality of partial light beams by one rectangular lens.
Then, these partial light beams are divided into three light valves 925R and 925R by the rectangular lens of the second lens plate 922.
Superimposed around 5G and 925B. Therefore, by using the uniform illumination optical system 923, even when the light source device 920 has an uneven illuminance distribution in the cross section of the emitted light beam, the three light valves 925R, 925G, and 925B are used.
Can be illuminated with uniform illumination light.

Each color separation optical system 924 includes a blue-green reflecting dichroic mirror 941, a green reflecting dichroic mirror 942, and a reflecting mirror 943. First, in the blue-green reflecting dichroic mirror 941, the blue light beam B and the green light beam G included in the light beam W are reflected at right angles, and head toward the green reflecting dichroic mirror 942. The red light beam R passes through the mirror 941, is reflected at a right angle by the rear reflection mirror 943, and is emitted from the emission unit 944 of the red light beam R to the prism unit 910 side.

Next, the green reflection dichroic mirror 942
Of the blue and green light fluxes B and G reflected by the blue-green reflection dichroic mirror 941,
Only the green light beam G is reflected at a right angle, and is emitted from the emission unit 945 of the green light beam G to the color combining optical system side. The blue light flux B that has passed through the green reflection dichroic mirror 942 is emitted from the emission section 946 of the blue light flux B to the light guide system 927 side. In this example, the emission portions 944 and 94 of the color light beams in the color separation optical system 924 from the emission portion of the light beam W of the uniform illumination optical element.
The distances to 5,946 are set to be substantially equal.

The red and green luminous flux R of the color separation optical system 924
Condensing lenses 951 and 952 are arranged on the emission sides of the G emission sections 944 and 945, respectively. Therefore,
The red and green luminous fluxes R and G emitted from the respective emission sections are incident on these condenser lenses 951 and 952 and are parallelized.

The red and green luminous fluxes R and G thus collimated enter the light valves 925R and 925G and are modulated to add image information corresponding to each color light. That is, the switching of these liquid crystal devices is controlled by driving means (not shown) in accordance with the image information, whereby each color light passing therethrough is modulated. As such a driving means, a known means can be used as it is. On the other hand, the blue light flux B is guided to the corresponding light valve 925B via the light guide system 927, where it is similarly modulated according to image information. The light valves 925R, 925G, and 925B of the present example further include an incident-side polarizing unit 960R, 960G, and 960B, an outgoing-side polarizing unit 961R, 961G, and 961B, and liquid crystal devices 962R and 962G disposed therebetween. , 962B
A liquid crystal light valve comprising:

The light guide system 927 includes a light emitting section 94 for the blue light beam B.
No. 6, a condenser lens 954 disposed on the exit side, an incident-side reflection mirror 971, an exit-side reflection mirror 972, an intermediate lens 973 disposed between these reflection mirrors, and a front side of the light valve 925B. And a condenser lens 953. The blue light flux B emitted from the condenser lens 946 is transmitted through the light guide system 927 to the liquid crystal device 962B.
And modulated. The optical path length of each color beam, that is,
Each liquid crystal device 962R, 962G, 9
The distance to 62B is the longest for the blue luminous flux B, and therefore the loss of light quantity of the blue luminous flux is the largest. However, by interposing the light guide system 927, the loss of light amount can be suppressed.

Each light valve 925R, 925G, 92
The color light fluxes R, G, and B modulated through 5B are incident on a color combining prism 910, where they are combined. The light combined by the color combining prism 910 is enlarged and projected on the surface of the projection surface 100 at a predetermined position via the projection lens unit 906.

In the present embodiment, the liquid crystal devices 962R and 962R
In 62G and 962B, since a light shielding layer is provided below the TFT, the liquid crystal devices 962R, 962G, 96
The reflected light from the projection optical system in the liquid crystal projector based on the projected light from 2B, the reflected light from the surface of the TFT array substrate when the projected light passes, and passes through the projection optical system after being emitted from another liquid crystal device. Even if a part of the projected light is incident as return light from the side of the TFT array substrate, a switching TFT of a pixel electrode, a TFT of a sampling circuit, a TFT of a precharging circuit, a TFT of an inspection circuit, or data. Channels of peripheral circuits such as a line drive circuit and a scan line drive circuit can be sufficiently shielded from light.

Therefore, even if a prism unit suitable for miniaturization is used for the projection optical system, each of the liquid crystal devices 962R, 96
It is not necessary to separately arrange a film for preventing return light between the 2G, 962B and the prism unit, or to perform a return light prevention process on the polarizing means, so that the configuration can be reduced in size and simplified. It is very advantageous.

Further, in the present embodiment, T
Since it is possible to suppress the influence of the FT on the channel region, it is not necessary to attach a polarizing means which has been directly subjected to a return light preventing process to the liquid crystal device. Therefore, as shown in FIGS. 14 and 15, the polarizing means is formed separately from the liquid crystal device, and more specifically, one of the polarizing means 961R, 961G, 9
61B is attached to the prism unit 910, and the other polarizing means 960R, 960G, 960B is a condensing lens 95
3, 945, 944. Thus, by attaching the polarizing means to the prism unit, the heat of the polarizing means is absorbed by the prism unit, so that a rise in the temperature of the liquid crystal device can be prevented.

Further, as shown in FIG. 15, when the liquid crystal device and the polarizing means are formed apart from each other, an air layer is formed between the liquid crystal device and the polarizing means. By providing a cooling means on one side on the lower side, and sending a blow such as cool air from the cooling means between the liquid crystal device and the polarizing means from the blowing port 990, it is possible to further prevent the temperature of the liquid crystal device from rising, and Malfunction due to temperature rise can be prevented.

In FIG. 16, a laptop personal computer 1200, which is another example of electronic equipment, has the above-mentioned liquid crystal device 200 provided in a top cover case, and further contains a CPU, a memory, a modem, and the like. A main body 1204 incorporating a keyboard 1202 is provided.

In FIG. 17, a pager 1300, which is another example of the electronic equipment, includes a liquid crystal device 200 in which a driving circuit 1004 is mounted on a TFT array substrate in a metal frame 1302 to form a liquid crystal module.
Light guide 1306 including 06a, circuit board 130
8, first and second shield plates 1310 and 1312,
It is housed together with two elastic conductors 1314 and 1316 and a film carrier tape 1318. In this example, the above-described display information processing circuit 1002 (see FIG. 13) may be mounted on a circuit board 1308 or on a TFT array substrate of the liquid crystal device 200. Furthermore,
The above-described drive circuit 1004 can be mounted on a circuit board 1308.

Also, as shown in FIG.
Liquid crystal device 2 which does not mount the display information processing circuit 1002 or the display information processing circuit 1002
In the case of 00, the IC 1324 including the drive circuit 1004 and the display information processing circuit 1002
TCP (Tape Carrier Package) 1 mounted on 2
320 can be physically, electrically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 1 to produce, sell, use, etc. as a liquid crystal device.

In addition to the electronic devices described above with reference to FIGS. 14 to 18, a liquid crystal television, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, an electronic organizer, a calculator, a word processor, a workstation , Mobile phones, videophones, POS terminals,
A device equipped with a touch panel or the like is an example of the electronic device shown in FIG.

As described above, according to the present embodiment, various types of liquid crystal devices provided with a liquid crystal device capable of displaying high-quality images by using TFTs having high light-shielding performance against return light and the like and excellent transistor characteristics. Electronic devices can be realized.

[0156]

According to the present invention, it is possible to prevent a situation in which the first, second, and third switching elements composed of, for example, TFTs, etc., degrade switching characteristics due to generation of photocurrent due to return light or the like. Therefore, a high-quality image display can be performed by the switching element having excellent switching characteristics. Further, since it is not necessary to arrange the sampling circuit and the precharge circuit in the peripheral portion of the first substrate placed in the light-shielding case unlike the related art, for example, by arranging these circuits below the peripheral part, It is also possible to make effective use of the dead space under the peripheral parting.

Further, since a situation in which a photocurrent is generated in the semiconductor layer due to return light or the like and the transistor characteristics of the TFT are degraded is prevented, a high quality image can be obtained by the TFT having excellent transistor characteristics. Display becomes possible.

[Brief description of the drawings]

FIG. 1 is a block diagram of various wirings, peripheral circuits, and the like formed on a TFT array substrate in an embodiment of a liquid crystal device.

FIG. 2 is a plan view showing an overall configuration of the liquid crystal device of FIG.

FIG. 3 is a cross-sectional view illustrating an overall configuration of the liquid crystal device of FIG.

FIG. 4 is a circuit diagram of a TFT constituting a precharge circuit provided in the liquid crystal device.

FIG. 5 is a circuit diagram of a TFT constituting a sampling circuit provided in a liquid crystal device.

FIG. 6 is a pixel switching TF constituting a liquid crystal device.
It is sectional drawing which shows T and TFT for precharge circuits.

7 is a plan view showing a corner portion of a screen display area of a TFT array substrate of the liquid crystal device of FIG.

8 is a diagram showing a TFT in the embodiment of the liquid crystal device shown in FIG.
FIG. 14 is a block diagram of an application example of various wirings, peripheral circuits, and the like formed on an array substrate.

FIG. 9 is a circuit diagram of an example of an inspection circuit.

10 is a process chart (1) showing a manufacturing process in a part of the liquid crystal device in FIG. 6 in order.

FIG. 11 is a process diagram (part 2) for sequentially illustrating the manufacturing process in a part of the liquid crystal device in FIG. 6;

12 is a process chart sequentially showing a manufacturing process in another part of the liquid crystal device of FIG. 6;

FIG. 13 is a block diagram illustrating a schematic configuration of an embodiment of an electronic device according to the present invention.

FIG. 14 is a cross-sectional view illustrating a liquid crystal projector as an example of an electronic apparatus.

15 is a sectional view taken along line E-E 'of FIG.

FIG. 16 is a front view showing a personal computer as another example of the electronic apparatus.

FIG. 17 is an exploded perspective view showing a pager as an example of an electronic apparatus.

FIG. 18 is a perspective view illustrating a liquid crystal device using TCP as an example of an electronic apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... TFT array substrate 2 ... Counter substrate 3, 3 "... Light shielding layer 11 ... Pixel electrode 12 ... Alignment film 21 ... Common electrode 22 ... Alignment film 23 ... Second light shielding layer 30, 202, 302 ... TFT 31 ... Scan line ( Gate electrode) 32, 32 ″ semiconductor layer 33, 33 ″ gate insulating layer 34, 34 ″ source region 35 data line (source electrode) 36, 36 ″ drain region 37, 37 ″, 38, 38 ″ Contact hole 41 first interlayer insulating layer 42 second interlayer insulating layer 43 third interlayer insulating layer 50 liquid crystal layer 52 sealing material 53 peripheral parting 70 storage capacitor 101 data line driving circuit 104 scanning line driving Circuit 200 Liquid crystal device 201 Precharge circuit 202 TFT 204 Precharge signal line 206 Precharge circuit drive signal line 301 Sampling circuit 302 … TFT 401… Inspection circuit 402… TFT

Claims (17)

[Claims] 1. A liquid crystal is sandwiched between a pair of first and second substrates. A plurality of scanning lines and a plurality of data lines intersecting the plurality of scanning lines are provided on the first substrate. And a plurality of first switching elements connected to the plurality of scanning lines and data lines; and a plurality of pixel electrodes connected to the plurality of first switching elements. A sampling circuit that samples a signal and supplies the plurality of data lines to the plurality of data lines; and a precharge circuit that supplies a precharge signal of a predetermined voltage level to the plurality of data lines by a plurality of third switching elements prior to the image signal. At least one of the circuits is disposed on the first substrate, and the second switching switch and the second and third switches included in the at least one circuit. At a position facing each of at least one of the chining elements,
A liquid crystal device further comprising a light shielding layer provided between the first substrate, the first switching element, and the one element. 2. At least one of the first, second and third switching elements comprises a thin film transistor, and includes a semiconductor layer forming the thin film transistor formed on the light shielding layer via an insulating film. The liquid crystal device according to claim 1, wherein: 3. The method of claim 1, wherein at least one of the first, second, and third switching elements is an LDD (Lightly Doped).
Drain) structured thin film transistor, wherein the light-shielding layer has at least a channel region of the thin film transistor and L
The liquid crystal device according to claim 1, wherein the liquid crystal device is provided at a position facing the DD region. 4. The liquid crystal device according to claim 1, wherein the light-shielding layer is formed of the same material by the same thin film forming process over the entire area. 5. The liquid crystal device according to claim 1, wherein the light shielding layer is connected to a constant potential source. 6. The liquid crystal device according to claim 5, wherein the constant potential of the constant potential source is equal to a ground potential. 7. The device according to claim 1, further comprising a counter electrode provided on a side of said second substrate facing said liquid crystal, wherein a constant potential of said constant potential source is equal to a potential of said counter electrode. Item 6. The liquid crystal device according to item 5. 8. The method of claim 1, wherein at least one of the first, second, and third switching elements comprises a thin film transistor of one of an N-channel type, a P-channel type, and a complementary type. The liquid crystal device according to claim 1. 9. A seal surrounding the liquid crystal by bonding the first and second substrates around a screen display area defined by the plurality of pixel electrodes on a plane parallel to the first and second substrates. A member, and a light-shielding peripheral parting formed on the second substrate along an outline of the screen display area between the seal member and the screen display area on the plane; 9. The liquid crystal device according to claim 1, wherein one of the circuits is provided at a position facing the peripheral parting. 10. The precharge circuit is provided, wherein the plurality of data lines are supplied with the image signal from one side of the data lines and the precharge signal from the other side. 10. The method according to claim 1, wherein
The liquid crystal device according to claim 1. 11. An inspection circuit including a fourth switching element for performing a predetermined inspection on the liquid crystal device is provided by the first circuit.
The light shielding layer is further provided on the substrate, and the light shielding layer is further provided between the first substrate and the fourth switching element at a position facing the fourth switching element. 1
0. The liquid crystal device according to any one of 0. 12. The liquid crystal device according to claim 1, wherein a peripheral circuit including a fifth switching element for holding a voltage for operating the liquid crystal device is provided on the first substrate instead of the at least one circuit. The liquid crystal device according to claim 1, wherein the light shielding layer is provided between the first substrate and the fifth switching element at a position facing the fifth switching element. 13. An electronic apparatus comprising the liquid crystal device according to claim 1. 14. A projection system comprising: a light source; a liquid crystal light valve that receives light emitted from the light source and modulates the light according to image information; and a projection unit that projects the light modulated by the liquid crystal light valve. In the display device, the liquid crystal light valve may include a first liquid crystal light valve disposed on a light incident side.
A liquid crystal device in which liquid crystal is sandwiched between a substrate and a second substrate disposed on the emission side; a first polarizing unit disposed outside the first substrate; and a liquid crystal device disposed outside the second substrate. Second
A polarizing unit, a plurality of scanning lines, a plurality of data lines intersecting the plurality of scanning lines, and a plurality of second lines connected to the plurality of scanning lines and the data lines on the second substrate. One thin film transistor; and a plurality of pixel electrodes connected to the plurality of first thin film transistors, wherein light is shielded between the second substrate and the first thin film transistor corresponding to at least a channel region of the first thin film transistor. A projection type display device, comprising a layer, and a space formed between the second polarizing means and the liquid crystal device. 15. A light source, color separation means for separating a light beam emitted from the light source into at least two color light beams, and modulation corresponding to image information on each color light beam separated by the color separation means. A liquid crystal light valve, a combining unit for combining light modulated by the liquid crystal light valve, and a projecting unit for projecting a combined light beam emitted from the combining unit. Is a first light source disposed on the light incident side.
A liquid crystal device in which liquid crystal is sandwiched between a substrate and a second substrate disposed on the light emission side; a first polarizing unit disposed outside the first substrate; and a liquid crystal device disposed outside the second substrate. And a plurality of scanning lines, a plurality of data lines intersecting the plurality of scanning lines, and a connection to the plurality of scanning lines and the data lines on the second substrate. A plurality of first thin film transistors, and a plurality of pixel electrodes connected to the plurality of first thin film transistors, wherein at least a channel region of the first thin film transistors is provided between the second substrate and the first thin film transistors A projection type display device, wherein a light-shielding layer is disposed in correspondence with the second polarization means, and the second polarization means is attached to the synthesis means. 16. The projection type display device according to claim 15, wherein said combining means comprises a prism unit. 17. The apparatus according to claim 14, further comprising a blower for blowing air between the liquid crystal device and the second polarizing unit. Projection display device.