JP3988734B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention belongs to the technical field of an electro-optical device such as an active matrix driving type liquid crystal panel driven by a thin film transistor (hereinafter referred to as TFT), or an electronic device using the electro-optical device, and more particularly, a precharge circuit. And a drive circuit having a sampling circuit, an electro-optical device, and an electronic device.

  2. Description of the Related Art Conventionally, in an active matrix liquid crystal panel driven by TFTs, a large number of scanning lines and data lines arranged vertically and horizontally, and a large number of pixel electrodes corresponding to the intersections of the scanning lines and data lines are provided on the TFT array substrate. Is provided. In addition to these, various peripheral circuits including TFTs such as a scanning line driving circuit, a data line driving circuit, a sampling circuit, and a precharge circuit may be provided on such a TFT array substrate. .

  Among these peripheral circuits, the sampling circuit is a circuit that samples an image signal in order to supply a high-frequency image signal to each data line stably in synchronization with the scanning signal at a predetermined timing. In addition, various peripheral circuits using TFTs or the like can be provided on the TFT array substrate from the viewpoints of improving image quality in liquid crystal display, reducing power consumption, and reducing costs.

  In addition, the precharge circuit has a timing at which an image signal is sampled by the sampling circuit with respect to the data line for the purpose of improving the contrast ratio, stabilizing the potential level of the data line, and reducing line unevenness on the display screen. This is a circuit that reduces a load when an image signal is written to a data line by supplying a precharge signal (image auxiliary signal) at a preceding timing. In particular, in the so-called 1H inversion driving method in which the voltage polarity of the data line normally performed for alternating current driving of the liquid crystal is inverted every one horizontal scanning period and driven, in one horizontal blanking period before one horizontal effective display period, If a precharge signal having a predetermined potential is written in advance on the data line after the polarity of the image signal is switched, the amount of charge required for writing the image signal on the data line can be remarkably reduced.

  Here, in the screen display area defined by the plurality of pixels arranged in a matrix on the TFT array substrate, that is, in the area where the image is actually displayed on the liquid crystal panel due to the change in the alignment state of the liquid crystal, In order to control the pixel switching TFT provided in each pixel, a larger area for forming a peripheral circuit around the screen display area is better as a basic requirement.

  However, in order to further improve the resolution, the liquid crystal panel can be used to improve the yield by increasing the resolution of the liquid crystal panel or increasing the number of pieces taken from the mother board, and to be used for portable mobile applications. There are increasing demands for miniaturization. As described above, when the liquid crystal panel is highly refined or miniaturized, the pixel size is inevitably reduced. Accordingly, it is necessary to integrate peripheral circuits formed on the same substrate.

  Therefore, in order to integrate the peripheral circuits, the precharge circuit and the sampling circuit may be provided on the same side with respect to the screen display area of the liquid crystal panel. The precharge circuit and the sampling circuit are provided in parallel to the data line on the side where the image signal is supplied to the data line by the data line driving circuit and the sampling circuit. By adopting such a configuration, it is not necessary to provide a precharge circuit on the other end of the data line, that is, on the side opposite to the side to which the image signal is supplied as in the prior art. The precharge circuit drive signal line for controlling the signal line and the precharge circuit may not be routed around the screen display area.

  However, according to the configuration of the above-described conventional precharge circuit and sampling circuit, it is necessary to continuously form the precharge circuit and the sampling circuit on the same side, which occupies a predetermined area on the substrate. Therefore, there is a problem that it is difficult to integrate the precharge circuit and the sampling circuit and to reduce the size of the liquid crystal panel including the precharge circuit and the sampling circuit.

  That is, the switching means constituting the precharge circuit must be formed for each data line, and a precharge circuit drive signal line and an extended wiring from the precharge signal line must be provided. Similarly, the switching means configuring the sampling circuit must be configured for each data line, and extended wiring from the sampling circuit drive signal line and the image signal line must be provided. As a result, when the liquid crystal panel is downsized, it becomes difficult to form the precharge circuit and the sampling circuit in parallel, and as a result, the precharge circuit and the sampling circuit cannot be integrated.

  Therefore, the present invention has been made in view of the above-described problems, and the problem is that the precharge circuit and the sampling circuit can be efficiently arranged on the substrate to reduce the size of the electro-optical device. An electro-optical device and an electronic apparatus including the electro-optical device are provided.

In order to solve the above problems, an electro-optical device according to the present invention includes a plurality of pixel electrodes, a plurality of data lines to which image signals are supplied, a plurality of scanning lines to which scanning signals are supplied, and the data lines. And switching means for controlling the conductive state and non-conductive state between the data line and the pixel electrode based on a scanning signal supplied to the scanning line. An electro-optical device, a precharge circuit including a plurality of thin film transistors having a source region electrically connected to a precharge signal line and a gate electrode electrically connected to the precharge circuit drive signal line; Provided corresponding to the thin film transistor of the precharge circuit, and electrically connected to the drain region of the thin film transistor of the precharge circuit and the data line. Comprising a drain region, electrically connected to the source regions to the image signal line, and a sampling circuit comprising a plurality of thin film transistors having a gate electrically coupled electrode to the sampling circuit driving signal line, the pixel electrode The sampling circuit is arranged between the image display area where the image is formed and the precharge circuit .

In the electro-optical device according to the aspect of the invention, the precharge signal line may be branched and connected to source regions of the plurality of thin film transistors.
In the electro-optical device according to the aspect of the invention, it is preferable that the sampling circuit drive signal line is disposed between adjacent thin film transistors of the precharge circuit.
In the electro-optical device according to the aspect of the invention, it is preferable that the source region and the drain region of the thin film transistor of the sampling circuit are located on an extension line of the source region and the drain region of the thin film transistor of the precharge circuit.
In the electro-optical device according to the aspect of the invention, the wiring connecting the drain region of the thin film transistor of the precharge circuit and the drain region of the thin film transistor of the sampling circuit intersects the image signal line and intersects the image signal line. The wiring may be a wiring formed in a layer different from the image signal line.
The electro-optical device of the present invention includes a plurality of pixel electrodes, a plurality of data lines to which image signals are supplied, a plurality of scanning lines to which scanning signals are supplied, and between the data lines and the pixel electrodes. And an electro-optical device provided with switching means that is controlled based on a scanning signal supplied to the scanning line, and which is interposed between the data line and the pixel electrode. A source region electrically connected to the precharge signal line, a pair of drain regions provided on both sides of the source region via a channel formation region, and a precharge circuit drive signal line facing the channel formation region A precharge circuit comprising a plurality of thin film transistors having a pair of electrically connected gate electrodes, and one drain of the thin film transistors of the precharge circuit; A plurality of thin film transistors having a region, a drain region electrically connected to the data line, a source region electrically connected to the image signal line, and a gate electrode electrically connected to the sampling circuit drive signal line And the sampling circuit is arranged between the image display area in which the pixel electrode is formed and the precharge circuit .

In the electro-optical device according to the aspect of the invention, the precharge signal line may be branched and connected to source regions of the plurality of thin film transistors.
In the electro-optical device according to the aspect of the invention, it is preferable that the precharge circuit drive signal line is branched and connected to the pair of gate electrodes of the thin film transistor.
In the electro-optical device according to the aspect of the invention, it is preferable that the sampling circuit drive signal line is branched and electrically connected to gate electrodes of a plurality of thin film transistors of the sampling circuit.
In the electro-optical device according to the aspect of the invention, it is preferable that the precharge circuit includes the thin film transistor for each block according to the number of phase developments of the image signal lines.
In the electro-optical device according to the aspect of the invention, the sampling circuit driving signal line may include a pair of sampling circuit driving signal lines disposed on both sides of the block formed of a thin film transistor of the precharge circuit, and the pair of sampling circuits. The drive signal line is preferably connected and electrically connected to gate electrodes of a plurality of thin film transistors of the sampling circuit.

  Further, according to the electronic apparatus using the electro-optical device, the electronic apparatus includes the above-described electro-optical device of the present invention, and the electro-optical device can be reduced in size, so that the electronic device can be reduced in size. be able to.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

Next, preferred embodiments of the present invention will be described with reference to the drawings.
In addition, each embodiment described below is an embodiment when the present invention is applied to a projection type liquid crystal device that transmits light from a light source and displays an image.

(I) First Embodiment (A) Configuration of Liquid Crystal Device First, the configuration of a liquid crystal device according to a first embodiment will be described with reference to FIGS.

  First, an overall configuration of a liquid crystal device which is an example of the electro-optical device according to the first embodiment will be described with reference to FIGS. 1 to 3. Here, FIG. 1 is a block diagram showing the configuration of various wirings, peripheral circuits and the like provided on the TFT array substrate in the liquid crystal device of the first embodiment, and FIG. 2 shows the TFT array substrate formed thereon. FIG. 3 is a plan view seen from the counter substrate side together with each component, and FIG. 3 is a cross-sectional view taken along the line HH ′ of FIG. 2 including the counter substrate.

  As shown in FIG. 1, the liquid crystal device 200 includes a TFT array substrate 1 made of, for example, a quartz substrate or hard glass. On the TFT array substrate 1, a plurality of pixel electrodes 11 provided in a matrix, a plurality of data lines 35 arranged in the X direction and extending in the Y direction, and a plurality of data electrodes 35 arranged in the Y direction are arranged. Each of the scanning lines 31 extends along the X direction, is interposed between each data line 35 and the pixel electrode 11, and scans the conduction state and the non-conduction state between the data line 35 and the pixel electrode 11. A plurality of TFTs 30 that are controlled by using scanning signals respectively supplied via the lines 31 are formed.

  Further, on the TFT array substrate 1, a precharge circuit 201 according to the present invention for supplying a precharge signal of a predetermined voltage level to each of the plurality of data lines 35 in advance of the image signal, and the image signal are provided. A sampling circuit 301 according to the present invention, which supplies data to a plurality of data lines 35 by sampling, a data line driving circuit 101, and a scanning line driving circuit 104 are formed. Here, the data line driving circuit 101 includes an image signal shift register circuit and a precharge dedicated shift register circuit, which will be described later. The sampling circuit 301 includes a plurality of TFTs 302 as a plurality of second switching means that are independently driven, and the precharge circuit 201 is a plurality of first switching means that are independently driven. TFT 302 is included.

  Among these, the scanning line driving circuit 104 applies a scanning signal to the scanning lines 31 in a pulse-sequential manner in a pulse-sequential manner at a predetermined timing based on a power supply voltage and a reference clock supplied from the external control circuit.

  On the other hand, the shift register circuit for image signals in the data line driving circuit 101 has a timing of 6 when the scanning line driving circuit 104 applies the scanning signal based on the power supply voltage, the reference clock, etc. supplied from the external control circuit. For each of the image signal input lines VID 1 to VID 6 as one image signal supply line, a sampling circuit drive signal is supplied to the TFT 302 in the sampling circuit 301 via the sampling circuit drive signal line 306 for each data line 35.

  In parallel with this, the precharge dedicated shift register circuit in the data line driving circuit pre-loads each of the TFTs 202 constituting the precharging circuit 201 from the external control circuit prior to the timing at which the sampling circuit driving signal is output. A precharge circuit drive signal supplied via the charge circuit drive signal line 206 is supplied to each TFT 202 via the precharge circuit drive signal line 206a.

  Next, the precharge circuit 201 includes a TFT 202 for each data line 35. The precharge signal line 204 is connected to the source electrode of the TFT 202, the precharge circuit drive signal line 206 a is connected to the gate electrode of the TFT 202, and the data line 35 is connected to the drain electrode of the TFT 202. Then, power of a predetermined voltage required for writing the precharge signal from the external power supply is supplied via the precharge signal line 204, and the precharge signal is written to each data line 35 at a timing preceding the image signal. As described above, the precharge circuit drive signal is supplied from the precharge dedicated shift register circuit in the data line drive circuit 101 via the precharge circuit drive signal line 206a. At this time, the precharge circuit 20 l preferably supplies the data line 35 with the precharge signal corresponding to the pixel data of the intermediate gradation level.

  On the other hand, in the sampling circuit 301, the TFT 302 is provided for each data line 35, the image signal input lines VID1 to VID6 are read by the source electrode of the TFT 302, and the sampling circuit drive signal line 306 is connected to the gate electrode of the TFT 302, respectively. Has been. When six parallel image signals expanded in six phases are input via the image signal input lines VID1 to VID6, the image signals are sampled. When a sampling circuit driving signal is input from the image signal shift register in the data line driving circuit 101 via the sampling circuit driving signal line 306, the image signals sampled for each of the six image signal input lines VID1 to VID6. Are sequentially applied to the data line 35 for each group of six adjacent data lines 35.

  At this time, regarding the positional relationship between the precharge circuit 201 and the sampling circuit 301 on the TFT array substrate 1, the precharge circuit 201 is formed adjacent to the data line driving circuit 101 as shown in FIG. 1 or FIG. Furthermore, image signal input lines VID1 to VID6 are arranged adjacent to the precharge circuit 201, and a sampling circuit 301 is formed adjacent to the image signal input lines VID1 to VID6.

  That is, the sampling circuit 301 and the precharge circuit 201 are formed so as to sandwich the image signal input lines VID 1 to VID 6, and the sampling circuit 301 is formed at a position closer to the image display area than the precharge circuit 201. (See FIG. 2).

  Here, the sampling circuit 301 and the precharge circuit 201 are housed in a light-shielding case when the liquid crystal panel is completed. Therefore, the TFT 202 and the semiconductor layer to be described later in the TFT 301 constituting the sampling circuit 301 and the precharge circuit 201 are not irradiated with incident light from the outside, and the light caused by the incident light or the like in the semiconductor layer. A current is not generated and the TFT 202 or the TFT 302 does not malfunction.

  On the other hand, the data line driving circuit 101 and the scanning line driving circuit 104 are provided on the peripheral portion of the TFT array substrate 1 that does not face the liquid crystal layer 50, as shown in FIGS.

  Further, in FIGS. 2 and 3, the image display region (that is, the alignment state of the liquid crystal layer 50 is actually arranged) including a plurality of pixel electrodes 11 and having a size defined by the size on the TFT array substrate 1. A sealing material 52 made of a photo-curing resin that surrounds the liquid crystal layer 50 by adhering both substrates around a region where an image is displayed by a change is provided along the image display region. This sealing material 52 is an adhesive made of, for example, a photo-curing resin or a thermosetting resin for bonding the TFT array substrate 1 and the counter substrate 2 around them, and the distance between the two substrates is set as a predetermined plant. Spacers for mixing are mixed.

  Next, as shown in FIG. 2, a data line driving circuit 101 and mounting terminals 102 are provided in the area outside the seal material 52 along the lower side of the image display area. A scanning line driving circuit 104 is provided on both sides of the image display area. Further, a plurality of wirings 105 are provided on the upper side of the image display area.

  In addition, at least one corner of the counter substrate 2 is provided with a silver point 106 made of a conductive material for electrical conduction between the TFT array substrate 1 and the counter substrate 2. The counter substrate 2 having almost the same outline as the sealing material 52 is fixed to the TFT array base 1 by the sealing material 52.

  Here, the precharge circuit 201 and the sampling circuit 301 are basically AC drive circuits. For this reason, even if the precharge circuit 201 and the sampling circuit 301 are provided on the portion of the TFT array substrate 1 facing the liquid crystal layer 50 surrounded by the sealing material 52 and sandwiched between both substrates, the liquid crystal layer by direct current voltage application is provided. The problem of 50 degradation does not occur.

  In addition, since the precharge circuit 201 and the sampling circuit 301 are not formed on the portion of the TFT array substrate 1 facing the sealing material 52, the TFTs 202 and 302 constituting these circuits are destroyed by the spacer mixed in the sealing material 52. There is no fear of doing.

(B) Configuration of Precharge Circuit and Sampling Circuit Next, a specific configuration of the precharge circuit 201 and the sampling circuit according to the present invention in the liquid crystal device 200 of the first embodiment will be described with reference to FIGS. I will explain. 6 is an enlarged plan view of the precharge circuit 201 as viewed from the counter electrode 2 side, FIG. 7 is a cross-sectional view taken along line BB ′ in FIG. 6 of the liquid crystal device 200, and FIG. 8 is a diagram of the liquid crystal device 200. 6 is a cross-sectional view taken along line AA ′ in FIG.

  More specifically, the TFT 202 in the precharge circuit 201 of the first embodiment may be configured by an N-channel TFT 202a as shown in FIG. 4A, or as shown in FIG. 4B. Thus, it may be composed of a P-channel TFT 202b. Here, in FIG. 4A or FIG. 4B, the precharge circuit drive signal input via the precharge circuit drive signal line 206a shown in FIG. 1 is applied to each TFT 202a or TFT 202b via the gate electrode. 1 and the precharge signal that is also input via the precharge signal line 204 shown in FIG. 1 is input to each TFT 202a or TFT 202b via the source electrode.

  Corresponding to these, the TFT 302 in the sampling circuit 301 of the first embodiment may be constituted by an N-channel TFT 302a as shown in FIG. 5A, or as shown in FIG. 5B. Further, it may be composed of a P-channel TFT 302b. Here, in FIG. 5 (1) or FIG. 5 (2), the six image signals input through the image signal input lines VIDn (VID1 to VID6) shown in FIG. The sampling circuit driving signal input from the data line driving circuit 101 shown in FIG. 1 through the sampling circuit driving signal line 306 is input to the TFT 302a or TFT 302b as a gate voltage.

  First, the configuration of the precharge circuit 201 and the sampling circuit 301 of the first embodiment will be described with reference to FIG. Note that FIG. 6 shows a case where the TFT 202 is formed of either an N-channel TFT or a P-channel TFT. In FIG. 6, an image signal is shown for simplification of explanation. There are three input lines.

  As shown in FIG. 6, the precharge circuit 201 and the sampling circuit 301 of the first embodiment are arranged on both sides of the image signal input lines VID1 to VID3, and the sampling circuit 301 further includes the image signal input line. Arranged on the image display area side when viewed from VID1 to VID3.

  At this time, the TFT 202 in the precharge circuit 201 is configured with the precharge signal line 204 as a source electrode line, the precharge circuit drive signal line 206a as a gate electrode line, and the data line 35 as a drain electrode line.

  Each electrode line and each electrode region of each TFT 202 are connected to each other through a contact hole 38.

  On the other hand, the signal line 303 to which the TFT 302 in the sampling circuit 301 is connected to any one of the image signal input lines VID1 to VID3 is a source electrode line, the sampling circuit drive signal line 306 is a gate electrode line, and a data line 35 is configured as a drain electrode line.

  Each electrode line and each electrode region of each TFT 302 are interlayer-connected by a contact hole 38.

  Further, in order to commonly connect the drain electrode of the TFT 202 and the drain electrode of the TFT 302 by the gate line 35, a relay wiring 304 is formed in a layer different from the image signal input lines VID1 to VID3.

  Next, the cross-sectional configuration of the liquid crystal panel in the sampling circuit 301 will be further described with reference to FIG. In FIG. 7, the scales of the layers and members are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. 7 also shows the alignment film 22 and the like that are formed so as to face the sampling circuit 301 with the liquid crystal layer 50 interposed therebetween.

  Note that the cross-sectional structure of the liquid crystal panel in the TFT 202 portion in the precharge circuit 201 is basically the same as the cross-sectional structure shown in FIG.

  As shown in FIG. 7, the TFT 302 in the sampling circuit 301 includes a TFT array substrate 1, a first interlayer insulating layer 41 stacked thereon, a semiconductor layer 32 such as p-Si (polysilicon), a gate insulating layer 33, Sampling circuit drive signal line 306 (gate electrode), precharge signal line 204 (source electrode), second interlayer insulating layer 42, data line 35 (drain electrode), third interlayer insulating layer 43, light shielding film 44 and alignment film 12 It has.

  Further, a counter substrate 2 made of, for example, a glass substrate and the alignment film 22 laminated thereon are provided at a position facing the TFT 302. A liquid crystal 50 is sealed between the alignment films 12 and 22.

  Next, among these layers, the configuration of each layer excluding the TFT 302 will be described in order.

  First, the light shielding film 44 formed on the TFT array substrate 1 prevents light from the lower side in FIG. 7 from being irradiated to the TFT 302, thereby preventing a photocurrent from being induced in the semiconductor layer 32 constituting the TFT 302. . Note that the light shielding film 44 is not necessary in a reflective liquid crystal panel.

Next, the first interlayer insulating layer 41 that is the basis of the TFT 302 is NSG, PSG (SiO ₂ containing P ₂ O ₅ ), BSG (SiO ₂ containing B ₂ O ₃ ), BPSG ( It is made of a silicate glass film such as SiO ₂ containing P ₂ O ₅ and B ₂ O ₃ , a silicon nitride film, or a silicon oxide film. Here, when the first interlayer insulating layer 41 is manufactured, annealing is performed at about 900 ° C., thereby preventing contamination and flattening.

  The second interlayer insulating layer 42 and the third interlayer insulating layer 43 are each formed of a silicate glass film such as NSG, PSG, BSG, or BPSG having a thickness of about 5000 to 15000 mm, a silicon nitride film, a silicon oxide film, or the like.

  Next, the alignment films 12 and 22 are made of an organic thin film such as a polyimide thin film. The alignment films 12 and 22 are formed, for example, by applying a polyimide-based coating solution and then rubbing in a predetermined direction so as to have a predetermined pretilt angle.

  The liquid crystal layer 50 is formed by sealing liquid crystal by vacuum suction or the like in a space surrounded by a sealing material 52 (see FIGS. 2 and 3) between the TFT array substrate 1 and the counter substrate 2. The The liquid crystal layer 50 is made of, for example, a liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed.

  Next, the configuration of each layer related to the TFT 302 will be described in order.

  As shown in FIG. 7, the TFT 302 includes a sampling circuit drive signal line 306 (gate electrode) and a channel formation region 37 that is included in the semiconductor layer 32 and has a channel formed by an electric field from the sampling circuit drive signal line 306. The gate insulating layer 33 that insulates the sampling circuit drive signal line 306 and the semiconductor layer 32, the source region 34 formed in the semiconductor layer 32, the data line 35 (drain electrode), the signal line 303, and the semiconductor layer 32. , The data line 35 and the drain region 36, and the signal line 303 and the source region 34 are respectively provided with contact holes 38.

  Among these, the source region 34 and the drain region 36 have a predetermined concentration depending on whether the P-type channel formation region 37 or the p-type channel formation region 37 is formed in the semiconductor layer 32 as described later. It is formed by doping a P-type or p-type dopant.

  Here, the P-type channel TFT 302 has an advantage of high operating speed, and is suitable as the sampling circuit 301.

  On the other hand, the semiconductor layer 32 is formed by, for example, forming an a-Si (amorphous silicon) film on the first interlayer insulating layer 41 serving as a base, and then subjecting it to a solid phase growth to a thickness of about 500 to 2000 mm. To form. At this time, in the case of the n-channel TFT 302, a dopant of a group V element such as Sb (antimony), As (arsenic), or P (phosphorus) is doped by an ion implantation method or the like. In the case of the p-channel TFT 302, a dopant of a subgroup element such as Al (aluminum), B (boron), Ga (gallium), and In (indium) is doped by an ion implantation method or the like.

  At this time, particularly when the TFT 302 is an n-channel TFT having an LDD (Lightly Doped Drain) structure, the p-type semiconductor layer 32 and the source region 34 and the drain region 36 on the channel formation region 37 side, respectively. A lightly doped region is formed by doping a group V element such as P in an adjacent part, and a highly doped region is formed by doping another group V element such as P in the other part. Further, when a p-channel TFT is formed, a source region 34 and a drain region 36 are formed in a P-type semiconductor layer 32 using a group III element dopant such as B. Thus, when it is set as an LDD structure, the advantage which can reduce a short channel effect is acquired.

  Note that the TFT 302 may be an offset structure TFT without forming a low-concentration drain region, or may be a self-aligned TFT using a gate electrode as a mask.

  On the other hand, the gate insulating layer 33 is obtained by thermally oxidizing the semiconductor layer 32 at a temperature of about 900 to 1300 ° C. to form a relatively thin thermal oxide film of about 300 to 1500 mm.

  Further, the data line 35 (drain electrode) is formed by depositing p-Si by a low pressure CVD method or the like and then performing a photolithography process, an etching process, or the like. At this time, a metal film such as Al or a metal silicide film may be used.

  Further, the data line 35 (drain electrode) may be formed of a transparent conductive thin film such as an ITO film in the same manner as the pixel electrode 11.

  Further, it may be formed of a low resistance metal such as Al or a metal silicide deposited to a thickness of about 1000 to 5000 mm by sputtering or the like.

  On the other hand, the contact hole 38 is formed by dry etching such as reactive etching or reactive ion beam etching.

  In general, in the semiconductor layer 32 to be the channel formation region 37, when light is incident, a photoelectric current is generated due to the photoelectric conversion effect of p-Si, and the transistor characteristics of the TFT 302 are deteriorated. In the first embodiment, however, Since the TFT 302 and the TFT 202 are housed in a light-shielding case, incident light from the outside can be prevented from entering at least the channel region of the semiconductor layer 32.

  In addition to or instead of this, the data line 35 (drain electrode) is formed from an opaque metal thin film such as Al so as to cover the channel formation region 37 from above, and incident light on the semiconductor layer 32 (that is, light) In FIG. 7, it may be configured to prevent the incidence of light from the upper side.

In the first embodiment, since the TFTs 302 and 202 are p-Si type TFTs, the sampling circuit 201, the precharge circuit 301, the data line driving circuit 101, and the scanning are performed in the same thin film forming process when the TFTs 302 and 202 are formed. Since a peripheral circuit composed of the same p-Si TFT type TFT or the like such as the line driving circuit 104 can be formed, it is advantageous in manufacturing.
Further, the data line driving circuit 101 and the scanning line driving circuit 104 are arranged on the periphery of the TFT array substrate 1 by a plurality of complementary TFTs composed of, for example, an n-channel p-Si TFT and a p-channel p-Si TFT. Formed in part.

  Furthermore, although not shown in FIG. 7, for example, the TN (twisted nematic) mode, STN (STN) is provided on the side on which the projection light of the counter substrate 2 is incident and on the side of the TFT array substrate 1 on which the projection light is emitted. Depending on the operation mode, such as Super TN) mode, D-STN (Double-STN) mode, or normally white mode / normally black mode, the polarizing film, retardation film, polarizing plate, etc. are in a predetermined direction. Be placed.

  Next, the A-A ′ cross-sectional structure of the portion where the relay wiring 304 shown in FIG. 6 is formed will be described with reference to FIG. 8.

  A relay wiring 304 formed to connect the data line 35 as the drain electrode of the TFT 302 and the data line 35 as the drain electrode of the TFT 202 while maintaining insulation between the image signal input lines VID1 to VID3, for example, As shown in FIG. 8A, it can be formed in the same layer as the layer in which the scanning line 31 between the first interlayer insulating film 41 and the second interlayer insulating film 42 is formed. At this time, the interlayer connection with each data line 35 is formed by the contact hole 38.

  In addition to this, as shown in FIG. 8 (2), it is formed in the same layer as the layer on which the light shielding film 44 between the TFT array substrate 1 and the first interlayer insulating layer 41 is formed. It is also possible to connect the lines 35 to each other by using contact holes 38.

  Further, in order to reduce the resistance, as shown in FIG. 8 (3), the relay wiring 304 is formed on the same layer as the layer on which the light shielding film 44 between the TFT array substrate 1 and the first interlayer insulating layer 41 is formed. And a relay wiring 304 ′ is formed in the same layer as the layer on which the scanning line 31 between the first interlayer insulating film 41 and the second interlayer insulating film 42 is formed. The data lines 35 may be connected to each other through the contact holes 38, and the relay wiring 304 and the relay wiring 304 ′ may be connected to each other through the contact holes 38 ′.

  Furthermore, in order to reduce the resistance similarly, as shown in FIG. 8 (4), the same layer as that in which the scanning line 31 between the first interlayer insulating film 41 and the second interlayer insulating layer 42 is formed is used. The relay wiring 304 is formed on the layer, and the relay wiring 304 ′ is formed on the upper surface of the third interlayer insulating film 43 in FIG. 8 (4). The relay wiring 304 ′ and each data line 35 are respectively connected to the contact holes 38. The data lines 35 and the relay wiring 304 may be connected with each other through the contact holes 38 in addition to the interlayer connection with '. In this case, it is necessary to further form a fourth interlayer insulating film 45 on the upper surfaces of the relay wiring 304 ′ and the third interlayer insulating film 43 in FIG. 8 (4).

(C) Operation of Liquid Crystal Device Next, the operation of the liquid crystal device 200 configured as described above will be described with reference to FIG.

  First, the scanning line driving circuit 104 applies scanning signals to the scanning lines 31 in a pulse-sequential manner at predetermined timing.

  In parallel with this, upon receiving six parallel image signals developed in six phases from the six image signal input lines VID1 to VID6, the sampling circuit 301 samples these image signals.

  On the other hand, the data line driving circuit 101 supplies a sampling circuit driving signal for each data line for each of the six image signal input lines VID1 to VID6 in accordance with the timing at which the scanning line driving circuit 104 applies the gate voltage. Thus, the TFT 302 of the sampling circuit 301 is turned on. As a result, the image signals sampled by the sampling circuit 301 are sequentially applied to the six adjacent data lines 35. That is, six parallel image signals expanded from six phases input from the image signal input lines VID 1 to VID 6 by the data line driving circuit 101 and the sampling circuit 301 are expanded into six phases and supplied to the data line 35.

  On the other hand, the precharge circuit 201 supplies a precharge signal to each data line 35 at a timing preceding each image signal. More specifically, the precharge circuit 201 receives a power supply for writing a precharge signal to the data line 35 from the precharge signal line 204 and is input via the precharge circuit drive signal edge 206. The TFT 202 is turned on in accordance with the circuit drive signal, and a precharge signal is written to the data line 35.

  In the TFT 30 to which both the scanning signal and the image signal are applied, a voltage is applied to the pixel electrode 11 through the source region, the channel formation region, and the drain region. Thereafter, the voltage of the pixel electrode 11 is maintained by a storage capacitor (not shown) for a time that is, for example, three orders of magnitude longer than the time when the source voltage is applied.

  In the first embodiment, the voltage polarity of the source voltage in the data line 35 is inverted every predetermined period, such as one field or one frame, in order to drive the liquid crystal in an alternating current manner. Since the precharge signal corresponding to the pixel signal of the intermediate gray level is supplied to each data line 35 before being supplied to the TFT 30, the load when writing the image signal is reduced, and the data The potential level of the line 35 is stable regardless of the voltage level applied last time. Therefore, the current image signal can be supplied to each data line 35 with a stable potential.

  As described above, when a voltage is applied to the pixel electrode 11, the alignment state of the liquid crystal in the portion sandwiched between the pixel electrode 11 and the common electrode 21 in the liquid crystal layer 50 changes. Incident light cannot pass through this liquid crystal part according to the applied voltage, and in the normally black mode, incident light can pass through this liquid crystal part according to the applied voltage. The device 200 emits light having a contrast corresponding to the image signal.

  As described above, according to the liquid crystal device 200 of the first embodiment, in the positional relationship between the precharge circuit 201 and the sampling circuit 301, the sampling circuit 301 is closer to the image display area. The resistance between the circuit and the circuit can be reduced, and the waveform deformation of the image signal to be supplied to the pixel electrode 11 can be prevented.

  In addition, a plurality of image signal input lines VID1 to VID6 for applying phase-developed image signals are on the TFT array substrate 1 between the region where the precharge circuit 201 is formed and the region where the sampling circuit 301 is formed. Therefore, the path of the image signal from the image signal input lines VID1 to VID6 to the pixel electrode 11 via the sampling circuit 301 can be shortened and the resistance can be reduced.

  Further, since the TFT 202 or the TFT 302 is one of a P-channel TFT and an N-channel TFT, an image signal or a precharge signal can be supplied to the data line at high speed.

  Furthermore, in particular, since the image signal expanded in multiple phases by the sampling circuit 301 is sampled and expanded in multiple phases and then supplied as an image signal to the data line 35, a high-frequency image signal is supplied to each data line 35 at a predetermined timing. Thus, it can be stably supplied in synchronization with the scanning signal.

  In addition, since the precharge signal is supplied from the precharge circuit 201 prior to the image signal, the contrast ratio is improved, the potential level of the data line 35 is stabilized, and the line unevenness on the display screen is reduced. Thus, a high crystallized image can be displayed in the image display area of the liquid crystal device 200.

  Furthermore, since the liquid crystal device 200 including the above-described precharge circuit 201 is applied to a color liquid crystal projector, the three liquid crystal devices 200 are used as RGB light valves, and each panel is for RGB color separation. The light of each color separated through the dichroic mirror is incident as incident light. Therefore, in each embodiment, the counter substrate 2 is not provided with a color filter.

  However, in the liquid crystal device 200 as well, an RGB color filter may be formed on the counter substrate 2 together with its protective film in a predetermined region facing the pixel electrode 11. In this way, the liquid crystal device 200 of the first embodiment can be applied to a color liquid crystal device such as a direct-view type or reflective color liquid crystal television other than the liquid crystal projector.

  In the first embodiment described above, the TFT 202 of the precharge circuit 201 or the TFT 302 of the sampling circuit 301 is described as a positive stagger type or coplanar type p-Si TFT. However, an inverted stagger type TFT or a-Si TFT is used. The first embodiment is also effective for other types of TFTs such as TFTs.

  Furthermore, in the liquid crystal device 200, the liquid crystal layer 50 is made of nematic liquid crystal as an example. However, if polymer dispersed liquid crystal in which liquid crystal is dispersed as fine particles in a polymer is used, the alignment films 12 and 22 and the above-mentioned This eliminates the need for a polarizing film, a polarizing plate, and the like, and provides the advantages of high brightness and low power consumption of the liquid crystal device due to increased light utilization efficiency.

  Furthermore, if the pixel electrode 11 is formed of a metal film having a high reflectance such as Al, when the liquid crystal device 200 is applied to a reflective liquid crystal device, the liquid crystal molecules are substantially vertically aligned with no voltage applied. Super homeotropic) type liquid crystal can be used.

  Furthermore, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. In this way, the light collection efficiency of incident light is improved, and a brighter liquid crystal panel can be realized.

  Furthermore, in the liquid crystal device 200, the common electrode 21 is provided on the side of the counter substrate 2 so as to apply an electric field (vertical electric field) perpendicular to the liquid crystal layer 50, but an electric field (horizontal) parallel to the liquid crystal layer 50 is provided. The pixel electrode 11 is composed of a pair of electrodes for generating a horizontal electric field so that an electric field is applied (that is, the side of the TFT array substrate 1 is not provided with the electrode for generating a vertical electric field on the side of the counter substrate 2). It is also possible to provide a lateral electric field generating electrode. Using a horizontal electric field in this way is more advantageous in widening the viewing angle than using a vertical electric field.

(II) Second Embodiment Next, a second embodiment which is another embodiment according to the present invention will be described with reference to FIGS. 9 and 10. In FIG. 9 or FIG. 10, the same members as those in FIG. 1 or FIG. In the second embodiment, the entire configuration of the liquid crystal device 200 is the same as that of the first embodiment, and only the configurations of the precharge circuit and the sampling circuit described below are different.

  In the first embodiment described above, each TFT 302 in the sampling circuit 301 has a configuration in which one sampling circuit drive signal line 306 is connected from the data line drive circuit 101, and also the TFT 202 in the precharge circuit 201. The data line drive circuit 101 is connected to one precharge circuit drive signal line 206a and one precharge signal line 204, respectively.

  On the other hand, in the precharge circuit and the sampling circuit according to the second embodiment, a plurality of signal lines for supplying signals to the TFTs included therein are arranged in a concentrated manner so that the sampling circuit on the TFT array substrate 1 and The area occupied by the precharge circuit is reduced.

  That is, as shown in FIG. 9, in the liquid crystal device 200 ′ of the second embodiment, the sampling circuit 301 and the precharge circuit 201 ′ are sandwiched between the image signal input lines VID1 to VID6 as in the first embodiment. Further, the sampling circuit 301 is formed at a position closer to the image display area than the precharge circuit 201 ′.

  The data line driving circuit 101 includes an image signal shift register circuit and a precharge shift register circuit similar to those in the first embodiment, and six adjacent TFTs 302 are connected to the image signal shift register circuit from the image signal shift register circuit. One sampling circuit drive signal line 306 is branched and connected to the gate electrode of each TFT 302. According to this configuration, the six TFTs 302 are driven to be opened simultaneously.

  In addition, with respect to the six TFTs 202, one precharge circuit drive signal line 206a from the precharge dedicated shift register is branched and connected to the gate electrode of each TFT 202. Also with this configuration, the six TFTs 202 are driven to be opened simultaneously.

  Further, the corresponding image signal input lines VID1 to VID6 are connected to the source electrodes of the respective TFTs 302 via the signal lines 303, and the phase-developed image signals are supplied.

  Furthermore, each TFT 202 has a configuration in which the source electrodes of two adjacent TFTs 202 are overlapped to share one precharge signal line 204a described later.

  The drain electrode of the TFT 202 corresponding to the drain electrode of the one TFT 302 is connected to the one data line 35. At this time, the portion of the data line 35 that overlaps the image signal input lines VID1 to VID6 in plan view is the relay wiring 304 or 304 'as illustrated in FIG.

  Next, a specific pattern layout of the precharge circuit and the sampling circuit of the second embodiment will be described with reference to FIG.

  As shown in FIG. 10, in the precharge circuit 201 ′ of the second embodiment, two adjacent TFTs 202 share one source electrode, and one precharge signal line 204a is connected to the one source electrode. It is connected.

  Also, one precharge circuit drive signal line 206a from the data line drive circuit 101 'is branched and connected to the gate electrodes of the six adjacent TFTs 202.

  Further, one sampling circuit drive signal line 306 from the data line drive circuit 101 ′ is branched and connected to each TFT 302 in the sampling circuit 301 with respect to the gate electrodes of the six TFTs 302.

  At this time, each electrode line and each electrode region of each TFT 302 or TFT 202 are interlayer-connected by a contact hole 38.

  According to the configuration of the sampling circuit 301 and the precharge circuit 201 ′ in the liquid crystal device 200 ′ of the second embodiment described above, in addition to the effects of the configuration of the liquid crystal device 200 of the first embodiment, the sampling circuit 301 and the precharge. The area on the TFT array substrate 1 occupied by the circuit 201 ′ can be reduced.

(Electronics)
Next, an embodiment of an electronic apparatus provided with the liquid crystal device 200 described in detail above will be described with reference to FIGS.

  First, FIG. 17 shows a schematic configuration of an electronic apparatus including the liquid crystal device 200 as described above. In FIG. 17, an electronic device includes a display information output source 1000, the above-described external display information processing circuit 1002, a display driving circuit 1004 including the scanning line driving circuit 104 and the data line driving circuit 101, a liquid crystal panel 10, and a clock generation circuit. 1008 and a power supply circuit 1010 are provided. The display information output source 1000 includes a ROM (Read Only Memory), a RAM (Random Access Memory), a memory such as an optical disk device, a tuning circuit that tunes and outputs a television signal, and the like. Based on the clock signal, display information such as an image signal in a predetermined format is output to the display information processing circuit 1002. The display information processing circuit 1002 includes various known processing circuits such as an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit. The display information processing circuit 1002 receives the clock signal from the clock generation circuit 1008. A digital signal is sequentially generated from the input display information based on the received information and is output to the display driving circuit 1004 together with the clock signal CLK. The display driving circuit 1004 drives the liquid crystal panel 10 by the above-described driving method using the scanning line driving circuit 104 and the data line driving circuit 101. The power supply circuit 1010 supplies predetermined power to the above-described circuits. A display drive circuit 1004 may be mounted on the TFT array substrate constituting the liquid crystal panel 10, and in addition to this, a display information processing circuit 1002 may be mounted.

As an electronic apparatus having such a configuration, a liquid crystal projector shown in FIG. 18, a personal computer (PC) and engineering workstation (EWS) compatible with multimedia shown in FIG. 19, or a mobile phone, a word processor, a television, a viewfinder type, or Examples include a monitor direct-view video table recorder, an electronic notebook, an electronic desk calculator, a car navigation device, a POS terminal, and a device equipped with a touch panel.
Next, specific examples of the electronic apparatus configured as described above are shown in FIGS. In FIG. 18, a liquid crystal projector 1100 as an example of an electronic device is a projection-type liquid crystal projector, and includes a light source 1110, dichroic mirrors 1113, 1114, reflection mirrors 1115, 1116, 1117, an incident lens 1118, a relay lens 1119, An exit lens 1120, liquid crystal light valves 1122, 1123, 1124, a cross dichroic prism 1125, and a projection lens 1126 are provided. The liquid crystal light valves 1122, 1123, and 1124 are prepared as three liquid crystal modules including the liquid crystal panel 10 in which the drive circuit 1004 described above is mounted on the TFT array substrate, and each is used as a liquid crystal light valve. The light source 1110 includes a lamp 1111 such as a metal halide and a reflector 1112 that reflects light from the lamp 1111.

  In the liquid crystal projector 1100 configured as described above, the dichroic mirror 1113 for reflecting blue light / green light transmits red light of white light flux from the light source 1110 and reflects blue light and green light. . The transmitted red light is reflected by the reflection mirror 1117 and is incident on the liquid crystal light valve 1122 for red light. On the other hand, of the color light reflected by the dichroic mirror 1113, green light is reflected by the dichroic mirror 1114 that reflects green light and enters the liquid crystal light valve 1123 for green light. Blue light also passes through the second dichroic mirror 1114. For blue light, in order to prevent light loss due to a long optical path, light guiding means 1121 including a relay lens system including an incident lens 1118, a relay lens 1119, and an exit lens 1120 is provided, and blue light is transmitted through the blue light. The light enters the light liquid crystal light valve 1124. The three color lights modulated by the respective light valves enter the cross dichroic prism 1125. In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected onto the screen 1127 by the projection lens 1126 which is a projection optical system, and the image is enlarged and displayed.

  19, a laptop personal computer 1200, which is another example of an electronic device, includes a liquid crystal display 1206 in which the above-described liquid crystal panel 10 is provided in a top cover case, a CPU, a memory, a modem, and the like, and a keyboard. And a main body 1204 in which 1202 is incorporated.

  Further, as shown in FIG. 20, a liquid crystal device substrate 1304 in which liquid crystal is sealed between two transparent substrates 1304a and 1304b and the above-described drive circuit 1004 is mounted on a TFT array substrate is provided. A TCP (Tape Carrier Package) 1320 in which an IC chip 1324 is mounted on a polyimide table 1322 on which a metal conductive film is formed is connected to one of two transparent substrates 1304a and 1304b constituting the substrate 1304. It can also be produced, sold, and used as a liquid crystal device that is a single component.

As described above, in addition to the electronic devices described with reference to FIGS. 18 to 20, a liquid crystal television, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, an electronic notebook, a calculator, a word processor, a workstation, a mobile phone A telephone, a videophone, a POS terminal, a device provided with a touch panel, and the like can be given as examples of the electronic device shown in FIG.
In addition, this invention is not limited to the said Example, A various deformation | transformation implementation is possible within the range of the summary of this invention. For example, the present invention is not limited to those applied to driving the above-described various liquid crystal panels, but can also be applied to electroluminescence and plasma display devices.

  According to the present embodiment, various electronic devices including the liquid crystal device 200 that is small in size and significantly reduces the load of the signal source of the image signal by a sufficient precharge function and can stably display an image. realizable.

It is a block diagram of various wirings, peripheral circuits, etc. formed on the TFT array substrate in the first embodiment. It is a top view which shows the whole structure of a liquid crystal device. It is sectional drawing which shows the whole structure of a liquid crystal device. 2 is a circuit diagram of a TFT constituting a precharge circuit provided in a liquid crystal device, (1) is a circuit diagram of an n-channel TFT, and (2) is a circuit diagram of a p-channel TFT. FIG. FIG. 2 is a circuit diagram of a TFT constituting a sampling circuit provided in a liquid crystal device, (1) is a circuit diagram of an n-channel TFT, and (2) is a circuit diagram of a p-channel TFT. It is a top view which shows the structure of the precharge circuit of 1st Embodiment. It is sectional drawing which shows the structure of the precharge circuit of 1st Embodiment. It is sectional drawing which shows the structure of the relay wiring of 1st Embodiment, (1) is sectional drawing which shows the 1st example of arrangement | positioning of relay wiring, (2) is a cross section which shows the 2nd example of arrangement | positioning of relay wiring. (3) is a sectional view showing a third example of the arrangement of the relay wiring, and (4) is a sectional view showing a fourth example of the arrangement of the relay wiring. It is a block diagram of various wirings, peripheral circuits and the like formed on the TFT array substrate in the second embodiment. It is a top view which shows the structure of the precharge circuit of 2nd Embodiment. It is a block diagram which shows schematic structure of an electronic device. It is sectional drawing which shows the structure of the liquid crystal projector as an example of an electronic device. It is a front view which shows the external appearance of the personal computer as an example of an electronic device. It is a disassembled perspective view which shows the structure of the pager as an example of an electronic device. It is a perspective view which shows the external appearance of the liquid crystal device using TCP as an example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... TFT array substrate 2 ... Counter substrate 11 ... Pixel electrode 12 ... Alignment film 21 ... Common electrode 22 ... Alignment film 30, 202, 202a, 202b, 302, 302a, 302b ... TFT
31 ... Scanning line (gate electrode)
32 ... Semiconductor layer 33 ... Gate insulating layer 34 ... Source region 35 ... Data line (source electrode)
36 ... Drain region 38, 38 '... Contact hole 41 ... First interlayer insulating layer 42 ... Second interlayer insulating layer 43 ... Third interlayer insulating layer 45 ... Fourth interlayer insulating layer 50 ... Liquid crystal layer 52 ... Sealing material 101, 101 '... Data line driving circuit 102 ... Mounting terminal 104 ... Scanning line driving circuit 200, 200' ... Liquid crystal device 201, 201 '... Precharge circuit 204, 204a ... Precharge signal line 206, 206a ... Precharge circuit drive signal line 301 ... Sampling circuit 304, 304 '... Relay wiring 306 ... Sampling circuit drive signal line

Claims (12)

A plurality of pixel electrodes, a plurality of data lines to which image signals are supplied, a plurality of scanning lines to which scanning signals are supplied, and the data lines and the pixel electrodes are interposed between the data lines and the pixel electrodes, respectively. An electro-optical device comprising switching means for controlling a conduction state and a non-conduction state between pixel electrodes based on a scanning signal supplied to the scanning line,
A precharge circuit comprising a plurality of thin film transistors having a source region electrically connected to the precharge signal line and a gate electrode electrically connected to the precharge circuit drive signal line;
A drain region electrically connected to the data line; a source region electrically connected to the image signal line; and a drain region electrically connected to the data line, the drain region being provided corresponding to the thin film transistor of the precharge circuit. A sampling circuit composed of a plurality of thin film transistors having a gate electrode electrically connected to the sampling circuit drive signal line ,
An electro-optical device , wherein the sampling circuit is arranged between an image display region in which the pixel electrode is formed and the precharge circuit .   2. The electro-optical device according to claim 1, wherein the precharge signal line is branched and connected to source regions of the plurality of thin film transistors.   3. The electro-optical device according to claim 1, wherein the sampling circuit drive signal line is disposed between adjacent thin film transistors of the precharge circuit.   4. The source region and the drain region of the thin film transistor of the sampling circuit are located on an extension line of the source region and the drain region of the thin film transistor of the precharge circuit. 5. Electro-optic device.   A wiring connecting the drain region of the thin film transistor of the precharge circuit and the drain region of the thin film transistor of the sampling circuit intersects the image signal line, and the wiring intersecting the image signal line is different from the image signal line. The electro-optical device according to claim 1, wherein the electro-optical device is a wiring formed in a layer. A plurality of pixel electrodes, a plurality of data lines to which image signals are supplied, a plurality of scanning lines to which scanning signals are supplied, and the data lines and the pixel electrodes are interposed between the data lines and the pixel electrodes, respectively. An electro-optical device comprising switching means for controlling a conduction state and a non-conduction state between pixel electrodes based on a scanning signal supplied to the scanning line,
A source region electrically connected to the precharge signal line, a pair of drain regions provided on both sides of the source region via a channel formation region, and a precharge circuit drive signal line facing the channel formation region A precharge circuit comprising a plurality of thin film transistors having a pair of electrically connected gate electrodes;
One drain region of the thin film transistor of the precharge circuit, a drain region electrically connected to the data line, a source region electrically connected to the image signal line, and electrically connected to the sampling circuit drive signal line A sampling circuit comprising a plurality of thin film transistors having a gate electrode formed ,
An electro-optical device , wherein the sampling circuit is arranged between an image display region in which the pixel electrode is formed and the precharge circuit .   The electro-optical device according to claim 6, wherein the precharge signal line is branched and connected to source regions of the plurality of thin film transistors.   8. The electro-optical device according to claim 6, wherein the precharge circuit drive signal line is branched and connected to a pair of gate electrodes of the thin film transistor.   9. The electro-optical device according to claim 6, wherein the sampling circuit drive signal line is branched and electrically connected to gate electrodes of a plurality of thin film transistors of the sampling circuit. . 9. The electro-optical device according to claim 6, wherein the precharge circuit includes the thin film transistor for each block according to the number of phase developments of the image signal lines.   The sampling circuit drive signal line is composed of a pair of sampling circuit drive signal lines disposed on both sides of the block consisting of thin film transistors of the precharge circuit, and the pair of sampling circuit drive signal lines is connected to the sampling circuit The electro-optical device according to claim 10, wherein the electro-optical device is electrically connected to gate electrodes of the plurality of thin film transistors.   An electronic apparatus comprising the electro-optical device according to claim 1.

Images