JPH1117348A - Wiring board and manufacture thereof - Google Patents

Wiring board and manufacture thereof

Info

Publication number
JPH1117348A
JPH1117348A JP16864297A JP16864297A JPH1117348A JP H1117348 A JPH1117348 A JP H1117348A JP 16864297 A JP16864297 A JP 16864297A JP 16864297 A JP16864297 A JP 16864297A JP H1117348 A JPH1117348 A JP H1117348A
Authority
JP
Japan
Prior art keywords
thermosetting resin
insulating
wiring board
powder
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16864297A
Other languages
Japanese (ja)
Inventor
Shigeru Kamoi
茂 鴨井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP16864297A priority Critical patent/JPH1117348A/en
Publication of JPH1117348A publication Critical patent/JPH1117348A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board, composed of an insulation base made of an inorg. insulator powder bonded with a thermosetting resin and wiring conductors made of a metal powder bonded with a thermosetting resin and manufacture thereof with has superior moisture resistance and can normally and stably operate the incorporated semiconductor devices for a long time by preventing the water content of the outside air from entering the insulation base between insulation boards. SOLUTION: This wiring board comprises an insulation base 1 composed of insulation boards 1a-1c made of an inorganic powder 60-95 wt.% bonded with a thermosetting resin 5-40 wt.%, wiring conductors 2 which are made of a metallic powder bonded with a thermosetting resin and disposed between the boards 1a-1c, and insulation layer 5 made by depositing a thermosetting resin or inorganic insulator power bonded with a thermosetting resin on the side faces of the base 1. The insulation layer 5 selectively blocks the water content of the outside air from entering so as to normally and stably operate the incorporated semiconductor devices for a long time.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージや混成集積回路
基板等に用いられる配線基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for housing a semiconductor element for housing a semiconductor element or a hybrid integrated circuit board.

【0002】[0002]

【従来技術】従来、配線基板、例えば半導体素子を収容
する半導体素子収納用パッケージに使用される配線基板
は、酸化アルミニウム質焼結体等のセラミックスより成
り、その上面中央部に半導体素子を収容するための凹部
を有する絶縁基体と、絶縁基体の凹部周辺から下面にか
けて導出されたタングステン・モリブデン等の高融点金
属粉末から成る配線導体とから構成されており、このよ
うな絶縁基体の凹部底面に半導体素子をガラス・樹脂・
ロウ材等の接着剤を介して接着固定するとともに半導体
素子の各電極を例えばボンディングワイヤ等の電気的接
続手段を介して配線導体に電気的に接続し、しかる後、
絶縁基体の上面に金属やセラミックス等から成る蓋体を
絶縁基体の凹部を塞ぐようにしてガラス・樹脂・ロウ材
等の封止材を介して接合させ、絶縁基体の凹部内に半導
体素子を気密に収容することによって製品としての半導
体装置となる。そして、配線導体で絶縁基体下面に導出
した部位を外部の電気回路基板の配線導体に半田等の電
気的接続手段を介して接続することにより、収容する半
導体素子が外部電気回路基板に電気的に接続されること
となる。
2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and the semiconductor element is housed in the center of the upper surface thereof. And a wiring conductor made of a refractory metal powder such as tungsten or molybdenum which is led out from the periphery to the lower surface of the concave portion of the insulating substrate. Use glass, resin,
Attach and fix via an adhesive such as brazing material and electrically connect each electrode of the semiconductor element to a wiring conductor via an electrical connection means such as a bonding wire.
A lid made of metal, ceramic, or the like is bonded to the upper surface of the insulating base via a sealing material such as glass, resin, or brazing material so as to cover the concave part of the insulating base, and the semiconductor element is hermetically sealed in the concave part of the insulating base. A semiconductor device as a product is obtained by accommodating the semiconductor device. By connecting the portion of the wiring conductor led out to the lower surface of the insulating base to the wiring conductor of the external electric circuit board via an electric connection means such as solder, the semiconductor element to be accommodated is electrically connected to the external electric circuit board. It will be connected.

【0003】この従来の配線基板は、セラミックグリー
ンシート積層法によって製作され、具体的には、酸化ア
ルミニウム・酸化珪素・酸化マグネシウム・酸化カルシ
ウム等のセラミック原料粉末に適当な有機バインダ・溶
剤等を添加混合して泥漿状となすとともにこれを従来周
知のドクターブレード法を採用してシート状とすること
によって複数のセラミックグリーンシートを得、しかる
後、これらのセラミックグリーンシートに適当な打ち抜
き加工を施すとともに配線導体となる金属ペーストを所
定パターンに印刷塗布し、最後にこれらのセラミックグ
リーンシートを所定の順に上下に積層して生セラミック
成形体となすとともにこれを還元雰囲気中約1600℃の高
温で焼成することによって製作される。
This conventional wiring board is manufactured by a ceramic green sheet laminating method. Specifically, an appropriate organic binder, a solvent and the like are added to a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. A plurality of ceramic green sheets are obtained by mixing and forming a slurry into a sheet shape by employing a well-known doctor blade method, and thereafter, these ceramic green sheets are subjected to an appropriate punching process. A metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally, these ceramic green sheets are stacked up and down in a predetermined order to form a green ceramic molded body and fired at a high temperature of about 1600 ° C. in a reducing atmosphere. Produced by

【0004】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士が、あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突すると絶縁基体に欠けや割れ・クラック等が
発生し、その結果、半導体素子を気密に収容することが
できず、半導体素子を長期間にわたり正常かつ安定に作
動させることができなくなるという欠点を有していた。
However, in the conventional wiring board, since ceramics such as an aluminum oxide sintered body constituting the insulating base have a hard and brittle property, the wiring boards are not connected to each other in a transfer process or an automatic line for manufacturing semiconductor devices. If the wiring board and a part of the automatic semiconductor device manufacturing line collide violently, the insulating substrate may be chipped, cracked, cracked, etc., and as a result, the semiconductor element cannot be housed in a gas-tight manner, and the length of the semiconductor element cannot be increased. There was a disadvantage that normal and stable operation could not be achieved over a period of time.

【0005】また、この従来の配線基板の製造方法によ
れば、生セラミック成形体を焼成する際に生セラミック
成形体に不均一な焼成収縮が発生して、得られる配線基
板に反り等の変形や寸法のばらつきが発生し易く、その
結果、半導体素子と配線導体とを電気的に正確かつ確実
に接続することが困難であるという欠点を有していた。
In addition, according to this conventional method for manufacturing a wiring board, when the green ceramic molded body is fired, uneven firing shrinkage occurs in the green ceramic molded body, and the obtained wiring board is deformed such as warpage. This has the disadvantage that the semiconductor element and the wiring conductor are difficult to electrically and reliably connect with each other as a result.

【0006】そこで、配線基板の絶縁基体を従来のセラ
ミックスに代えて無機絶縁物粉末を熱硬化性樹脂により
結合した材料からなる絶縁基板を積層することで形成
し、また配線導体を従来のタングステンやモリブデン等
の高融点金属メタライズに代えて銅等の金属粉末を熱硬
化性樹脂により結合して成る材料で形成した配線基板が
提案されている。
Therefore, the insulating substrate of the wiring substrate is formed by laminating an insulating substrate made of a material obtained by bonding inorganic insulating powder with a thermosetting resin in place of conventional ceramics, and the wiring conductor is made of conventional tungsten or tungsten. There has been proposed a wiring board formed of a material obtained by bonding a metal powder such as copper with a thermosetting resin in place of a metal having a high melting point such as molybdenum.

【0007】この無機絶縁物粉末を熱硬化性樹脂で結合
して成る絶縁基体と金属粉末を熱硬化性樹脂で結合して
成る配線導体とから成る配線基板は、熱硬化性樹脂前駆
体と無機絶縁物粉末とを混合して成る半硬化状態の前駆
体シートを準備するとともにこれに適当な打ち抜き加工
を施し、次にこの前駆体シートに熱硬化性樹脂前駆体と
金属粉末とを混合して成る金属ペーストを所定パターン
に印刷塗布し、最後に金属ペーストが印刷塗布された前
駆体シートを約150 〜300 ℃の温度および約4〜100 k
gf/cm2 の圧力でホットプレスして積層するととも
にこれを約100〜300 ℃の温度で熱硬化させることによ
って製作される。
A wiring board composed of an insulating base formed by bonding an inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin is composed of a thermosetting resin precursor and an inorganic hardening resin. Prepare a precursor sheet in a semi-cured state by mixing with an insulating powder and subject it to appropriate punching, then mix the precursor sheet with a thermosetting resin precursor and a metal powder. The metal paste is printed and applied in a predetermined pattern, and finally, the precursor sheet on which the metal paste is printed is applied at a temperature of about 150 to 300 ° C. and about 4 to 100 k.
It is manufactured by laminating by hot pressing at a pressure of gf / cm 2 and thermosetting at a temperature of about 100 to 300 ° C.

【0008】この配線基板によれば、絶縁基板となる無
機絶縁物粉末および配線導体となる金属粉末を靭性に優
れる熱硬化性樹脂により結合して成ることから、配線基
板同士あるいは配線基板と半導体装置製作自動ラインの
一部とが激しく衝突しても絶縁基体に欠けや割れ・クラ
ック等が発生することは一切ない。
According to this wiring board, since the inorganic insulating powder serving as the insulating board and the metal powder serving as the wiring conductor are bonded by a thermosetting resin having excellent toughness, the wiring boards or the wiring board and the semiconductor device are combined. Even if a part of the automatic production line collides violently, chipping, cracking or cracking of the insulating substrate does not occur at all.

【0009】またこの配線基板の製造方法によれば、絶
縁基体および配線導体に含有される熱硬化性樹脂を熱硬
化させることにより製作されることから、焼成に伴う不
均一な収縮による変形や寸法のばらつきが発生すること
はない。
According to this method of manufacturing a wiring board, the wiring board is manufactured by thermosetting a thermosetting resin contained in an insulating base and a wiring conductor. Does not occur.

【0010】[0010]

【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂で結合して成る絶縁基体と
金属粉末を熱硬化性樹脂で結合して成る配線導体とから
成る配線基板によれば、半硬化した前駆体シートをホッ
トプレスで積層する際、互いに積層される前駆体シート
に含有される熱硬化性樹脂前駆体の硬化反応が積層前に
すでに双方とも一部進行し熱硬化性樹脂前駆体中の反応
基が減少していることから、上下の前駆体シート間では
これらの間の熱硬化性樹脂前駆体同士の硬化反応がその
分弱くなり、そのため絶縁基体を構成する各絶縁基板間
では熱硬化性樹脂同士が密に結合されずにこの部分への
透湿性が高くなって耐湿性がやや劣るものとなり、配線
基板を長期間にわたり外部大気中に放置すると、この絶
縁基板間を介して絶縁基体内部に外部大気中の水分が徐
々に浸入し、この浸入した水分が配線導体に腐食を発生
させることとなり、その結果、内部に収容する半導体素
子を長期間にわたり正常かつ安定に作動させることがで
きなくなってしまうという問題点を有していた。
However, according to the present invention, there is provided a wiring board comprising an insulating base formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin. For example, when laminating the semi-cured precursor sheets by hot pressing, the curing reaction of the thermosetting resin precursor contained in the precursor sheets to be laminated with each other already partially progresses before lamination and the thermosetting resin Since the number of reactive groups in the resin precursor is reduced, the curing reaction between the thermosetting resin precursors between the upper and lower precursor sheets is weakened by that amount, and therefore, each insulating material constituting the insulating base is reduced. The thermosetting resin is not tightly bonded between the boards, and the moisture permeability to this part is high, and the moisture resistance is slightly inferior. If the wiring board is left in the outside atmosphere for a long time, the Through Moisture in the outside air gradually penetrates into the inside of the edge substrate, and the penetrated water causes corrosion of the wiring conductor. As a result, the semiconductor element contained therein can operate normally and stably for a long period of time. There is a problem that it becomes impossible to do.

【0011】本発明は上記課題を解決すべく案出された
ものであり、その目的は、無機絶縁物粉末を熱硬化性樹
脂で結合して成る絶縁基体と金属粉末を熱硬化性樹脂で
結合して成る配線導体とから成る配線基板において、外
部大気中の水分が絶縁基板間を介して絶縁基体内部に浸
入することを防止して、耐湿性に優れ、内部に収容する
半導体素子を長期間にわたり正常かつ安定に作動させる
ことができる配線基板を提供することにある。
The present invention has been devised to solve the above-mentioned problems, and has as its object to bond an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin and a metal powder with a thermosetting resin. A wiring board comprising: a wiring conductor formed by: preventing moisture in the external atmosphere from invading the inside of the insulating base through the space between the insulating substrates, having excellent moisture resistance, and allowing the semiconductor element to be housed therein to be used for a long time. It is an object of the present invention to provide a wiring board that can be operated normally and stably over a long period of time.

【0012】また本発明の目的は、無機絶縁物粉末を熱
硬化性樹脂で結合して成る絶縁基体と金属粉末を熱硬化
性樹脂で結合して成る配線導体とから成る配線基板の製
造方法であって、耐湿性に優れ、内部に収容する半導体
素子を長期間にわたり正常かつ安定に作動させることが
できる配線基板を得ることができる製造方法を提供する
ことにある。
It is another object of the present invention to provide a method of manufacturing a wiring board comprising an insulating base formed by bonding inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding metal powder with a thermosetting resin. Accordingly, it is an object of the present invention to provide a manufacturing method capable of obtaining a wiring substrate having excellent moisture resistance and capable of operating a semiconductor element contained therein normally and stably for a long period of time.

【0013】[0013]

【課題を解決するための手段】本発明の配線基板は、60
乃至95重量%の無機絶縁物粉末を5乃至40重量%の熱硬
化性樹脂により結合して成る複数枚の絶縁基板が積層さ
れて形成される絶縁基体の内部に、金属粉末を熱硬化性
樹脂により結合して成る複数の配線導体が配設されて成
る配線基板であって、前記絶縁基体の側面に熱硬化性樹
脂から成る、または無機絶縁物粉末を熱硬化性樹脂で結
合して成る絶縁層が被着されていることを特徴とするも
のである。
According to the present invention, there is provided a wiring board comprising:
A metal powder is coated with a thermosetting resin inside an insulating substrate formed by laminating a plurality of insulating substrates formed by bonding 5 to 40% by weight of an inorganic insulating powder with a thermosetting resin of 5 to 40% by weight. A wiring board comprising a plurality of wiring conductors joined by a thermosetting resin, wherein the insulating base is made of a thermosetting resin, or an inorganic insulating powder is joined to the side face of the insulating base by a thermosetting resin. Characterized in that the layer is applied.

【0014】また、本発明の配線基板の製造方法は、熱
硬化性樹脂前駆体と無機絶縁物粉末とを混合して成る前
駆体シートを準備する工程と、この前駆体シートに熱硬
化性樹脂前駆体と金属粉末とを混合して成る金属ペース
トを所定パターンに印刷する工程と、この金属ペースト
が印刷塗布された前駆体シートを積層する工程と、この
積層された前駆体シートの側面に熱硬化性樹脂前駆体か
ら成る、または熱硬化性樹脂前駆体と無機絶縁物粉末と
を混合して成る絶縁ペーストを塗布する工程と、前記前
駆体シートと金属ペーストと絶縁ペーストとを熱硬化さ
せる工程とから成ることを特徴とするものである。
Further, in the method for manufacturing a wiring board according to the present invention, there is provided a step of preparing a precursor sheet obtained by mixing a thermosetting resin precursor and an inorganic insulating powder, and adding a thermosetting resin to the precursor sheet. A step of printing a metal paste formed by mixing the precursor and the metal powder in a predetermined pattern; a step of laminating a precursor sheet on which the metal paste is printed and applied; and a step of applying heat to the side surface of the laminated precursor sheet. A step of applying an insulating paste composed of a curable resin precursor or a mixture of a thermosetting resin precursor and an inorganic insulating powder; and a step of thermally curing the precursor sheet, metal paste, and insulating paste And characterized in that:

【0015】本発明の配線基板によれば、絶縁基体の側
面に熱硬化性樹脂から成る、または無機絶縁物粉末を熱
硬化性樹脂で結合して成る絶縁層が被着されていること
から、この絶縁層により外部大気中の水分が各絶縁基板
間を介して絶縁基体の内部に浸入することを有効に防止
することができるので、耐湿性に優れ、内部に収容する
半導体素子を長期間にわたり正常かつ安定に作動させる
ことができる配線基板となる。
According to the wiring board of the present invention, since the insulating layer made of a thermosetting resin or the inorganic insulating powder bonded with the thermosetting resin is applied to the side surface of the insulating base, This insulating layer can effectively prevent moisture in the external air from entering the inside of the insulating base through the space between the insulating substrates, so that it has excellent moisture resistance, and the semiconductor element housed therein can be used for a long time. The wiring board can be normally and stably operated.

【0016】また本発明の配線基板の製造方法によれ
ば、積層された前駆体シートの側面に熱硬化性樹脂前駆
体から成る、または熱硬化性樹脂前駆体と無機絶縁物粉
末とを混合して成る絶縁ペーストを塗布した後、前駆体
シートと金属ペーストと絶縁ペーストとを熱硬化させる
ことから、絶縁基体の側面を熱硬化性樹脂の結合が密な
絶縁層により覆うことができ、その結果、耐湿性に優
れ、内部に収容する半導体素子を長期間にわたり正常か
つ安定に作動させることができる配線基板を得ることが
できる。
Further, according to the method of manufacturing a wiring board of the present invention, a side face of a laminated precursor sheet is formed of a thermosetting resin precursor or a mixture of a thermosetting resin precursor and an inorganic insulating powder. After the application of the insulating paste, the precursor sheet, the metal paste, and the insulating paste are thermally cured, so that the side surfaces of the insulating substrate can be covered with a dense insulating layer in which the bonding of the thermosetting resin is dense. In addition, it is possible to obtain a wiring board which is excellent in moisture resistance and can normally and stably operate a semiconductor element housed therein for a long period of time.

【0017】[0017]

【発明の実施の形態】次に、本発明を添付の図面に基づ
き詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

【0018】図1は、本発明の配線基板を半導体素子を
収容する半導体素子収納用パッケージに適用した場合の
実施の形態の一例を示し、1は絶縁基体、2は配線導体
である。
FIG. 1 shows an example of an embodiment in which the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element. Reference numeral 1 denotes an insulating base, and 2 denotes a wiring conductor.

【0019】絶縁基体1は、例えば酸化珪素・酸化アル
ミニウム・窒化アルミニウム・炭化珪素・チタン酸バリ
ウム・ゼオライト等の無機絶縁物粉末をエポキシ樹脂・
ポリイミド樹脂・ビスマレイミド樹脂・熱硬化性ポリフ
ェニレンエーテル樹脂等の熱硬化性樹脂により結合した
材料から成る3枚の絶縁基板1a・1b・1cが積層さ
れて成るとともに、その上面中央部に段状に凹んだ凹部
Aを有しており、凹部A底面には半導体素子3が樹脂等
の接着剤を介して接着固定される。
The insulating substrate 1 is made of an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, zeolite, etc.
Three insulating substrates 1a, 1b, and 1c made of a material bonded by a thermosetting resin such as a polyimide resin, a bismaleimide resin, and a thermosetting polyphenylene ether resin are laminated, and a stepped shape is formed at the center of the upper surface thereof. The semiconductor device 3 has a concave portion A, and the semiconductor element 3 is fixed to the bottom surface of the concave portion A with an adhesive such as a resin.

【0020】絶縁基板1a・1b・1cに含有される無
機絶縁物粉末は、その粒径が0.1 〜100 μm程度であ
り、絶縁基板1a・1b・1cの熱膨張係数を半導体素
子3の熱膨張係数に近いものとする作用を為すととも
に、絶縁基板1a・1b・1cに良好な熱伝導性や耐水
性あるいは所定の比誘電率等を付与する作用を為す。
The inorganic insulating powder contained in the insulating substrates 1a, 1b, 1c has a particle size of about 0.1 to 100 μm, and the coefficient of thermal expansion of the insulating substrates 1a, 1b, 1c is determined by the thermal expansion coefficient of the semiconductor element 3. In addition to the function of making the coefficient close to the coefficient, the function of imparting good thermal conductivity, water resistance, or a predetermined relative dielectric constant to the insulating substrates 1a, 1b, and 1c is performed.

【0021】一方、絶縁基板1a・1b・1cに含有さ
れる熱硬化性樹脂は、無機絶縁物粉末同士を結合し、絶
縁基体1を所定の形状に保持する作用を為す。
On the other hand, the thermosetting resin contained in the insulating substrates 1a, 1b, and 1c functions to bind the inorganic insulating powder to each other and hold the insulating base 1 in a predetermined shape.

【0022】絶縁基板1a・1b・1cは、無機絶縁物
粉末を靭性に優れる熱硬化性樹脂により結合して成るこ
とから、配線基板同士が衝突した際等に絶縁基体1に欠
けや割れ・クラック等が発生することはない。
Since the insulating substrates 1a, 1b, and 1c are formed by bonding inorganic insulating powder with a thermosetting resin having excellent toughness, the insulating substrate 1 may be chipped, cracked, or cracked when the wiring substrates collide with each other. Does not occur.

【0023】また、絶縁基板1a・1b・1cは、その
中に含有される無機絶縁物粉末の含有量が60重量%未満
であると、絶縁基体1の熱膨張係数が半導体素子3の熱
膨張係数と比較して極めて大きなものとなり、半導体素
子3が作動時に発生する熱が半導体素子3と絶縁基体1
とに印加されると両者の熱膨張係数の相違に起因して大
きな熱応力が発生するため半導体素子3に絶縁基体1か
らの剥離や割れを発生させやすい傾向にあり、また無機
絶縁物粉末の含有量が95重量%を超えると、無機絶縁物
粉末を熱硬化性樹脂で強固に結合することが困難となる
傾向にある。従って、絶縁基板1a・1b・1cは、そ
の中に含有される無機絶縁物粉末の含有量が60乃至95重
量%の範囲に特定される。
When the content of the inorganic insulating powder contained in the insulating substrates 1a, 1b, and 1c is less than 60% by weight, the thermal expansion coefficient of the insulating base 1 becomes lower than that of the semiconductor element 3. Coefficient, the heat generated when the semiconductor element 3 operates is reduced by the semiconductor element 3 and the insulating base 1.
When applied to the semiconductor element 3, a large thermal stress is generated due to a difference in thermal expansion coefficient between the two, so that the semiconductor element 3 tends to be peeled or cracked from the insulating base 1, and the inorganic insulating powder If the content exceeds 95% by weight, it tends to be difficult to firmly bond the inorganic insulating powder with a thermosetting resin. Therefore, the insulating substrates 1a, 1b and 1c are specified so that the content of the inorganic insulating powder contained therein is in the range of 60 to 95% by weight.

【0024】また絶縁基体1は、その内部に凹部A周辺
の絶縁基板1b上面から絶縁基板1b・1cを貫通して
絶縁基板1c下面に導出する、例えば銅・銀・金・表面
が銀で被覆された銅等の金属粉末をエポキシ樹脂等の熱
硬化性樹脂により結合した多数の配線導体2が配設され
ている。
The insulating base 1 penetrates from the upper surface of the insulating substrate 1b around the recess A to the lower surface of the insulating substrate 1c by passing through the insulating substrates 1b and 1c. For example, copper, silver, gold, and the surface are covered with silver. A large number of wiring conductors 2 are provided in which the obtained metal powder such as copper is bonded by a thermosetting resin such as an epoxy resin.

【0025】配線導体2は、内部に収容する半導体素子
3を外部電気回路に電気的に接続する作用を為し、その
凹部A周辺の部位には半導体素子3の各電極がボンディ
ングワイヤ4を介して電気的に接続され、またその絶縁
基体1下面に導出する部位は外部電気回路基板に電気的
に接続される。
The wiring conductor 2 serves to electrically connect the semiconductor element 3 housed therein to an external electric circuit. And a portion extending to the lower surface of the insulating base 1 is electrically connected to an external electric circuit board.

【0026】配線導体2に含有される金属粉末は、配線
導体2に導電性を付与する作用を為し、配線導体2にお
ける含有量が70重量%未満では配線導体2の導電性が悪
くなる傾向にあり、また、配線導体2における含有量が
95重量%を超えると金属粉末を熱硬化性樹脂で強固に結
合することが困難となる傾向にある。従って、配線導体
2に含有される金属粉末は、配線導体2における含有量
が70乃至95重量%の範囲が好ましい。
The metal powder contained in the wiring conductor 2 acts to impart conductivity to the wiring conductor 2, and if the content in the wiring conductor 2 is less than 70% by weight, the conductivity of the wiring conductor 2 tends to deteriorate. And the content in the wiring conductor 2 is
If it exceeds 95% by weight, it tends to be difficult to firmly bond the metal powder with a thermosetting resin. Therefore, the content of the metal powder contained in the wiring conductor 2 in the wiring conductor 2 is preferably in the range of 70 to 95% by weight.

【0027】なお、配線導体2に含有される金属粉末
は、その平均粒径が0.5 μm未満であると金属粉末同士
の接触抵抗が増加して配線導体2の電気抵抗が高いもの
となる傾向にあり、また、50μmを超えると絶縁基体1
に所定パターンの配線導体2を一般に要求される50乃至
200 μmの線幅に形成するのが困難となる傾向にある。
If the average particle size of the metal powder contained in the wiring conductor 2 is less than 0.5 μm, the contact resistance between the metal powders increases and the electric resistance of the wiring conductor 2 tends to be high. Yes, and if it exceeds 50 μm, the insulating substrate 1
The wiring conductor 2 having a predetermined pattern is generally required to be 50 to
It tends to be difficult to form a line width of 200 μm.

【0028】従って、配線導体2に含有される金属粉末
は、その平均粒径を0.5 乃至50μmとしておくことが好
ましい。
Therefore, the metal powder contained in the wiring conductor 2 preferably has an average particle size of 0.5 to 50 μm.

【0029】また、配線導体2に含有される熱硬化性樹
脂は、金属粉末同士を互いに接触させた状態で結合させ
るとともに配線導体2を絶縁基体1に被着させる作用を
為し、ビスフェノールA型エポキシ樹脂・ノボラック型
エポキシ樹脂・グリシジルエステル型エポキシ樹脂等の
エポキシ樹脂や、フェノール樹脂・ポリイミド樹脂・ビ
スマレイミド樹脂・熱硬化性ポリフェニレンエーテル樹
脂等の熱硬化性樹脂から成る。
The thermosetting resin contained in the wiring conductor 2 functions to bond the metal powders to each other in contact with each other and to adhere the wiring conductor 2 to the insulating base 1. It is made of epoxy resin such as epoxy resin, novolak type epoxy resin and glycidyl ester type epoxy resin, and thermosetting resin such as phenol resin, polyimide resin, bismaleimide resin and thermosetting polyphenylene ether resin.

【0030】配線導体2に含有される熱硬化性樹脂は、
配線導体2における含有量が5重量%未満では金属粉末
同士を強固に結合できないとともに配線導体2を絶縁基
体1に強固に被着させることが困難となり、また、配線
導体2における含有量が30重量%を超えると金属粉末同
士を十分に接触させることが困難となり、配線導体2の
電気抵抗が大きなものとなる傾向にある。従って、配線
導体2に含有される熱硬化性樹脂は配線導体2における
含有量が5乃至30重量%の範囲が好ましい。
The thermosetting resin contained in the wiring conductor 2 is as follows:
If the content in the wiring conductor 2 is less than 5% by weight, the metal powders cannot be firmly bonded to each other, it is difficult to firmly adhere the wiring conductor 2 to the insulating base 1, and the content in the wiring conductor 2 is 30% by weight. %, It is difficult to bring the metal powders into sufficient contact with each other, and the electrical resistance of the wiring conductor 2 tends to increase. Accordingly, the content of the thermosetting resin contained in the wiring conductor 2 in the wiring conductor 2 is preferably in the range of 5 to 30% by weight.

【0031】また、配線導体2は、その露出する表面に
ニッケルや金等の耐蝕性に優れ、かつボンディングワイ
ヤ4等との接合性に優れる金属をめっき法により1〜20
μmの厚みに被着させておくと、配線導体2が酸化腐食
することを有効に防止することができるとともに配線導
体2とボンディングワイヤ4および外部電気回路基板の
配線導体との接続を容易かつ強固に行なうことができ
る。従って、配線導体2はその露出する表面にニッケル
や金等の耐蝕性に優れ、かつボンディングワイヤ4等と
の接続性に優れる金属をめっき法により1〜20μmの厚
みに被着させておくことが好ましい。
The exposed surface of the wiring conductor 2 is made of a metal, such as nickel or gold, having excellent corrosion resistance and excellent bonding property with the bonding wire 4 or the like by plating method.
When the wiring conductor 2 is adhered to a thickness of μm, it is possible to effectively prevent the wiring conductor 2 from being oxidized and corroded, and to easily and firmly connect the wiring conductor 2 to the bonding wire 4 and the wiring conductor of the external electric circuit board. Can be performed. Therefore, the wiring conductor 2 is preferably coated with a metal having excellent corrosion resistance, such as nickel or gold, and excellent connectivity with the bonding wire 4 or the like to a thickness of 1 to 20 μm on the exposed surface by plating. preferable.

【0032】また、絶縁基体1は、その側面に、熱硬化
性樹脂から成る、または無機絶縁物粉末を熱硬化性樹脂
で結合して成る絶縁層5が被着されている。
The insulating substrate 1 has an insulating layer 5 formed on the side surface thereof, which is made of a thermosetting resin or which is formed by bonding an inorganic insulating powder with a thermosetting resin.

【0033】絶縁層5は、例えば無機絶縁物粉末を熱硬
化性樹脂で結合して成る場合、酸化珪素・酸化アルミニ
ウム・窒化アルミニウム・炭化珪素・チタン酸バリウム
・ゼオライト等の無機絶縁物粉末をエポキシ樹脂・ポリ
イミド樹脂・ビスマレイミド樹脂・熱硬化性ポリフェニ
レンエーテル樹脂等の熱硬化性樹脂により結合して成
り、絶縁基体1の側面を覆うことにより上下に積層され
た各絶縁基板1a・1b・1cの間から外部大気中の水
分が絶縁基体内部に浸入することを防止する作用を為
す。
When the insulating layer 5 is made of, for example, an inorganic insulating powder bonded with a thermosetting resin, the inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, zeolite, etc. Each of the insulating substrates 1a, 1b, and 1c, which is formed by bonding with a thermosetting resin such as a resin, a polyimide resin, a bismaleimide resin, and a thermosetting polyphenylene ether resin and covers the side surface of the insulating base 1, is vertically stacked. It acts to prevent moisture in the outside air from entering the inside of the insulating substrate from a short distance.

【0034】絶縁基体1は、その側面に無機絶縁物粉末
を熱硬化性樹脂により結合して成る絶縁層5が被着され
ていることから配線基板を外部大気中に長期間放置して
も絶縁層5により外部大気中の水分が各絶縁基板1a・
1b・1cの間から絶縁基体1内部に浸入するのが有効
に防止され、その結果、内部に収容する半導体素子3を
長期間にわたり正常かつ安定に作動させることができ
る。
The insulating substrate 1 has an insulating layer 5 formed by bonding an inorganic insulating powder with a thermosetting resin to the side surface thereof. The moisture in the external atmosphere is reduced by the layer 5 to each of the insulating substrates 1a.
Infiltration into the inside of the insulating base 1 from between 1b and 1c is effectively prevented, and as a result, the semiconductor element 3 housed therein can be operated normally and stably for a long period of time.

【0035】なお、絶縁層5は、その厚みが5μm未満
では外部大気中の水分が絶縁基体1内部に浸入するのを
十分に防止することが困難となる傾向にあるので、その
厚みを5μm以上としておくことが好ましく、通常5〜
50μmの厚みとしておけばよい。
If the thickness of the insulating layer 5 is less than 5 μm, it tends to be difficult to sufficiently prevent moisture in the external atmosphere from entering the inside of the insulating substrate 1. Preferably, it is usually 5
The thickness may be set to 50 μm.

【0036】また絶縁層5は、その中に含有される無機
絶縁物粉末の含有量が95重量%を超えると、絶縁基体1
の側面を絶縁層5により強固に覆うことが困難となる傾
向にある。従って、絶縁層5は、その中に含有される無
機絶縁物粉末の含有量が95重量%以下であることが好ま
しい。
When the content of the inorganic insulating powder contained in the insulating layer 5 exceeds 95% by weight, the insulating substrate 1
It tends to be difficult to firmly cover the side surface with the insulating layer 5. Therefore, it is preferable that the content of the inorganic insulating powder contained in the insulating layer 5 is 95% by weight or less.

【0037】さらに絶縁層5は、絶縁基板1a・1b・
1cを形成する材料と同じ材料で形成しておくと、絶縁
基体1と絶縁層5とが強固に結合して絶縁基体1側面を
強固に覆うことができる。従って絶縁層5は、絶縁基板
1a・1b・1cを形成する材料と同じ材料で形成して
おくことが好ましい。
Further, the insulating layer 5 comprises insulating substrates 1a, 1b,
When the insulating substrate 1 and the insulating layer 5 are formed of the same material as the material forming 1c, the insulating substrate 1 and the insulating layer 5 can be firmly bonded to each other, so that the side surface of the insulating substrate 1 can be firmly covered. Therefore, it is preferable that the insulating layer 5 is formed of the same material as the material forming the insulating substrates 1a, 1b, and 1c.

【0038】かくして本発明の配線基板によれば、絶縁
基体1の凹部Aの底面に半導体素子3を接着固定すると
ともに半導体素子3の各電極をボンディングワイヤ4を
介して配線導体2に電気的に接続し、最後に絶縁基体1
の上面に蓋体6を封止材を介して接合させることにより
製品としての半導体装置となる。
Thus, according to the wiring board of the present invention, the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion A of the insulating base 1 and each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 via the bonding wire 4. Connect and finally insulating base 1
The lid 6 is joined to the upper surface of the semiconductor device via a sealing material to form a semiconductor device as a product.

【0039】次に、本発明の配線基板の製造方法につい
て説明する。
Next, a method of manufacturing a wiring board according to the present invention will be described.

【0040】先ず、図2(a)に示すように無機絶縁物
粉末を熱硬化性樹脂前駆体で結合して成る3枚の半硬化
させた前駆体シート11a・11b・11cを準備する。
First, as shown in FIG. 2A, three semi-cured precursor sheets 11a, 11b, and 11c formed by bonding inorganic insulating powder with a thermosetting resin precursor are prepared.

【0041】前駆体シート11a・11b・11cは、例えば
無機絶縁物粉末が酸化珪素から成り、熱硬化性樹脂がエ
ポキシ樹脂から成る場合、先ず粒径が0.1 〜100 μm程
度の酸化珪素粉末にビスフェノールA型エポキシ樹脂・
ノボラック型エポキシ樹脂・グリシジルエステル型エポ
キシ樹脂等のエポキシ樹脂およびアミン系硬化剤・イミ
ダゾール系硬化剤・酸無水物系硬化剤等の硬化剤等を添
加混合して得たペーストを従来周知のドクターブレード
法等のシート成形技術を採用してシート状となすととも
にこれを約25〜100 ℃の温度で1〜60分加熱し半硬化さ
せることによって製作される。
For example, when the inorganic insulating powder is made of silicon oxide and the thermosetting resin is made of epoxy resin, the precursor sheets 11a, 11b and 11c are formed by adding bisphenol to silicon oxide powder having a particle size of about 0.1 to 100 μm. A type epoxy resin
A paste obtained by adding and mixing epoxy resins such as novolak type epoxy resins and glycidyl ester type epoxy resins and curing agents such as amine type curing agents, imidazole type curing agents, and acid anhydride type curing agents. It is manufactured by forming into a sheet by using a sheet forming technique such as a method and heating and semi-curing the sheet at a temperature of about 25 to 100 ° C. for 1 to 60 minutes.

【0042】次に、図2(b)に示すように前駆体シー
ト11a・11b・11cのうち2枚の前駆体シート11a・11
bに凹部Aとなる開口A1・A2を、2枚の前駆体シー
ト11b・11cに配線導体2を引き回すための通路となる
貫通孔B1・B2を各々形成する。
Next, as shown in FIG. 2 (b), two precursor sheets 11a, 11b, 11c of the precursor sheets 11a, 11b, 11c are used.
b, openings A1 and A2 to be the concave portions A, and through holes B1 and B2 as passages for routing the wiring conductor 2 in the two precursor sheets 11b and 11c, respectively.

【0043】前駆体シート11a・11b・11cに形成され
た開口A1・A2および貫通孔B1・B2は、前駆体シ
ート11a・11b・11cに従来周知のパンチング加工法を
施し、前駆体シート11a・11b・11cの各々に所定形状
の孔を穿孔することによって形成される。
The openings A1, A2 and the through holes B1, B2 formed in the precursor sheets 11a, 11b, 11c are formed by subjecting the precursor sheets 11a, 11b, 11c to a conventionally well-known punching method. It is formed by drilling a hole of a predetermined shape in each of 11b and 11c.

【0044】次に、図2(c)に示すように、前駆体シ
ート11bの上面、前駆体シート11cの上下面および前駆
体シート11b・11cに形成された貫通孔B1・B2内に
配線導体2となる金属ペースト12を従来周知のスクリー
ン印刷法および充填法を採用して所定パターンに印刷塗
布および充填する。
Next, as shown in FIG. 2C, wiring conductors are formed in the upper surface of the precursor sheet 11b, the upper and lower surfaces of the precursor sheet 11c, and the through holes B1 and B2 formed in the precursor sheets 11b and 11c. The second metal paste 12 is printed and applied in a predetermined pattern by employing a conventionally known screen printing method and filling method.

【0045】なお、配線導体2となる金属ペースト12と
しては、例えば粒径が0.1 〜20μm程度の銅等粉末にビ
スフェノールA型エポキシ樹脂・ノボラック型エポキシ
樹脂・グリシジルエステル型エポキシ樹脂等のエポキシ
樹脂およびアミン系硬化剤・イミダゾール系硬化剤・酸
無水物系硬化剤等の硬化剤等を添加混合しペースト状と
なしたものが使用される。
The metal paste 12 serving as the wiring conductor 2 may be, for example, a powder of copper having a particle size of about 0.1 to 20 μm, an epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidyl ester type epoxy resin, or the like. A paste obtained by adding and mixing a curing agent such as an amine curing agent, an imidazole curing agent, and an acid anhydride curing agent is used.

【0046】次に、図2(d)に示すように、前駆体シ
ート11a・11b・11cを上下に重ねて約150 〜300 ℃の
温度および約4〜100 kgf/cm2 の圧力でホットプ
レスして積層するとともに、積層された前駆体シート11
a・11b・11cの側面に絶縁層5となる絶縁ペースト13
を従来周知のスクリーン印刷法を採用して印刷塗布す
る。
Next, as shown in FIG. 2D, the precursor sheets 11a, 11b and 11c are stacked one on top of the other and hot pressed at a temperature of about 150 to 300 ° C. and a pressure of about 4 to 100 kgf / cm 2. And laminated, the laminated precursor sheet 11
a. Insulating paste 13 which becomes insulating layer 5 on side surfaces of 11b and 11c
Is applied by printing using a conventionally known screen printing method.

【0047】なお、絶縁層5となる絶縁ペースト13は、
熱硬化性樹脂前駆体から、または熱硬化性樹脂前駆体と
無機絶縁物粉末とを混合して成り、例えば熱硬化性樹脂
前駆体と無機絶縁物粉末とを混合して成る場合、例えば
粒径が0.1 〜100 μm程度の酸化珪素粉末にビスフェノ
ールA型エポキシ樹脂・ノボラック型エポキシ樹脂・グ
リシジルエステル型エポキシ樹脂等のエポキシ樹脂およ
びアミン系硬化剤・イミダゾール系硬化剤・酸無水物系
硬化剤等の硬化剤等を添加混合することにより製作され
る。
The insulating paste 13 that becomes the insulating layer 5 is
From a thermosetting resin precursor, or a mixture of a thermosetting resin precursor and an inorganic insulating powder, for example, a mixture of a thermosetting resin precursor and an inorganic insulating powder, Of epoxy resin such as bisphenol A type epoxy resin, novolak type epoxy resin, glycidyl ester type epoxy resin and amine type curing agent, imidazole type curing agent, acid anhydride type curing agent etc. It is manufactured by adding and mixing a curing agent and the like.

【0048】この場合、積層された前駆体シート11a・
11b・11cの側面に塗布された絶縁ペースト13中の熱硬
化性樹脂前駆体は、硬化が進行していないので熱硬化性
樹脂前駆体中に多量の反応基が存在する。
In this case, the laminated precursor sheets 11a
Since the thermosetting resin precursor in the insulating paste 13 applied to the side surfaces of 11b and 11c has not been hardened, a large amount of reactive groups are present in the thermosetting resin precursor.

【0049】そして、最後にこの側面に絶縁ペースト13
が塗布された前駆体シート11a・11b・11cの積層体を
約100 〜300 ℃の温度で加熱して前駆体シート11a・11
b・11c・金属ペースト12・絶縁ペースト13を完全に熱
硬化させることによって、図1に示すような配線基板が
完成する。
Finally, an insulating paste 13 is applied to this side.
Is heated at a temperature of about 100 to 300 ° C. to form precursor sheets 11a, 11b, 11c.
By completely thermosetting b.11c, metal paste 12, and insulating paste 13, the wiring board as shown in FIG. 1 is completed.

【0050】この場合、反応基が多量に存在する絶縁ペ
ースト13中の熱硬化性樹脂前駆体同士およびこの熱硬化
性樹脂前駆体と前駆体シート11a・11b・11cの熱硬化
性樹脂前駆体とが密に反応して、絶縁基体1の側面を熱
硬化性樹脂の結合が密な絶縁層5により覆うことがで
き、耐湿性に優れる配線基板を提供することができる。
In this case, the thermosetting resin precursors in the insulating paste 13 in which a large amount of reactive groups are present, and the thermosetting resin precursors and the thermosetting resin precursors of the precursor sheets 11a, 11b, 11c Reacts densely, the side surfaces of the insulating base 1 can be covered with the insulating layer 5 in which the bonding of the thermosetting resin is dense, and a wiring board having excellent moisture resistance can be provided.

【0051】またこの場合、前駆体シート11a・11b・
11c、金属ペースト12および絶縁ペースト13は、熱硬化
時に収縮することは殆どなく、従って、得られる配線基
板に変形や寸法のばらつきが発生することは皆無であ
り、半導体素子3と配線導体2とを正確に接続すること
が可能となる。
In this case, the precursor sheets 11a, 11b
11c, the metal paste 12 and the insulating paste 13 hardly shrink during thermosetting, and therefore, there is no deformation or dimensional variation in the obtained wiring board. Can be connected accurately.

【0052】なお、本発明は上述の実施の形態に限定さ
れるものではなく、本発明の要旨を逸脱しない範囲であ
れば種々の変更は可能であり、例えば上述の実施の形態
の例においては本発明の配線基板を半導体素子を収容す
る半導体素子収納用パッケージに適用した場合を例にと
って説明したが、これを混成集積回路基板等に用いられ
る配線基板に適用してもよい。
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, in the above-described embodiment, Although the case where the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element has been described as an example, this may be applied to a wiring board used for a hybrid integrated circuit board or the like.

【0053】また、上述の実施の形態では、配線基板は
3枚の絶縁基板が積層されることにより形成されていた
が、配線基板は2枚あるいは4枚以上の絶縁基板が積層
されることにより形成されていてもよい。
In the above embodiment, the wiring board is formed by laminating three insulating substrates. However, the wiring board is formed by laminating two or four or more insulating substrates. It may be formed.

【0054】またさらに、上述の実施の形態では配線導
体は、金属粉末を熱硬化性樹脂で結合することによって
形成されていたが、配線導体は金属粉末を半田等の低融
点金属および熱硬化性樹脂により結合することにより形
成されていても良い。この場合、配線導体となる金属ペ
ースト中に半田等の低融点金属を適宜量含有させてお
き、この配線導体となる金属ペーストを熱硬化させる
前、あるいは熱硬化させるのと同時に金属ペーストに含
有された低融点金属を溶融させることによって金属粉末
を低融点金属により結合する方法が採用され得る。
Further, in the above embodiment, the wiring conductor is formed by bonding metal powder with a thermosetting resin, but the wiring conductor is formed by bonding the metal powder to a low melting point metal such as solder and a thermosetting resin. It may be formed by bonding with a resin. In this case, an appropriate amount of a low-melting metal such as solder is contained in the metal paste to be the wiring conductor, and is contained in the metal paste before or at the same time as the heat curing of the metal paste to be the wiring conductor. A method of bonding the metal powder with the low melting point metal by melting the low melting point metal can be adopted.

【0055】[0055]

【発明の効果】本発明の配線基板によれば、絶縁基体の
側面に熱硬化性樹脂から成る、または無機絶縁物粉末を
熱硬化性樹脂で結合して成る絶縁層が被着されているこ
とから、この絶縁層により外部大気中の水分が各絶縁基
板間を介して絶縁基体の内部に浸入することを有効に防
止することができ、その結果、内部に収容する半導体素
子を長期間にわたり正常かつ安定に作動させることがで
きる。
According to the wiring board of the present invention, the insulating layer made of a thermosetting resin or the inorganic insulating powder bonded with the thermosetting resin is applied to the side surface of the insulating base. Therefore, the insulating layer can effectively prevent moisture in the external atmosphere from entering the inside of the insulating base through the space between the insulating substrates, and as a result, the semiconductor element contained therein can be normally maintained for a long time. And it can be operated stably.

【0056】また本発明の配線基板の製造方法によれ
ば、積層された前駆体シートの側面に熱硬化性樹脂前駆
体から成る、または熱硬化性樹脂前駆体と無機絶縁物粉
末とを混合して成る絶縁ペーストを塗布した後、前駆体
シートと金属ペーストと絶縁ペーストとを熱硬化させる
ことから、絶縁基体の側面を熱硬化性樹脂の結合が密な
絶縁層により覆うことができ、従って、耐湿性に優れる
配線基板を提供することができる。
Further, according to the method of manufacturing a wiring board of the present invention, a side face of a laminated precursor sheet is formed of a thermosetting resin precursor or a mixture of a thermosetting resin precursor and an inorganic insulating powder. After the application of the insulating paste, the precursor sheet, the metal paste, and the insulating paste are thermally cured, so that the side surfaces of the insulating substrate can be covered with a dense insulating layer in which the bonding of the thermosetting resin is dense. A wiring board having excellent moisture resistance can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の配線基板を半導体素子収納用パッケー
ジに適用した場合の実施の形態の例を示す断面図であ
る。
FIG. 1 is a cross-sectional view showing an example of an embodiment in which a wiring board of the present invention is applied to a package for housing a semiconductor element.

【図2】(a)〜(d)は、それぞれ本発明の配線基板
の製造方法を説明するための工程毎の断面図である。
FIGS. 2A to 2D are cross-sectional views for explaining steps of a method for manufacturing a wiring board according to the present invention.

【符号の説明】[Explanation of symbols]

1・・・・・・・・絶縁基体 1a〜1c・・・・・絶縁基板 2・・・・・・・・配線導体 3・・・・・・・・半導体素子 5・・・・・・・・絶縁層 11a〜11c・・・・前駆体シート 12・・・・・・・金属ペースト 13・・・・・・・絶縁ペースト DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a-1c ... Insulating substrate 2 ... Wiring conductor 3 ... Semiconductor element 5 ... ..Insulating layers 11a-11c ... Precursor sheet 12 ... Metal paste 13 ... Insulating paste

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 60乃至95重量%の無機絶縁物粉末を
5乃至40重量%の熱硬化性樹脂により結合して成る複
数枚の絶縁基板が積層されて形成される絶縁基体の内部
に、金属粉末を熱硬化性樹脂により結合して成る複数の
配線導体が配設されて成る配線基板であって、前記絶縁
基体の側面に熱硬化性樹脂から成る、または無機絶縁物
粉末を熱硬化性樹脂で結合して成る絶縁層が被着されて
いることを特徴とする配線基板。
1. An insulating substrate formed by laminating a plurality of insulating substrates each formed by bonding 60 to 95% by weight of an inorganic insulating powder with 5 to 40% by weight of a thermosetting resin has a metal inside. What is claimed is: 1. A wiring board comprising a plurality of wiring conductors formed by bonding powders with a thermosetting resin, wherein said insulating substrate comprises a thermosetting resin on a side surface thereof, or said inorganic insulating powder comprises a thermosetting resin. A wiring board, wherein an insulating layer formed by bonding is bonded.
【請求項2】 熱硬化性樹脂前駆体と無機絶縁物粉末と
を混合して成る前駆体シートを準備する工程と、該前駆
体シートに熱硬化性樹脂前駆体と金属粉末とを混合して
成る金属ペーストを所定パターンに印刷する工程と、該
金属ペーストが印刷塗布された前駆体シートを積層する
工程と、該積層された前駆体シートの側面に熱硬化性樹
脂前駆体から成る、または熱硬化性樹脂前駆体と無機絶
縁物粉末とを混合して成る絶縁ペーストを塗布する工程
と、前記前駆体シートと金属ペーストと絶縁ペーストと
を熱硬化させる工程とから成ることを特徴とする配線基
板の製造方法。
2. A step of preparing a precursor sheet obtained by mixing a thermosetting resin precursor and an inorganic insulating powder; and mixing the thermosetting resin precursor and a metal powder in the precursor sheet. Printing the metal paste in a predetermined pattern, laminating a precursor sheet on which the metal paste is printed and coated, and comprising a thermosetting resin precursor on the side surface of the laminated precursor sheet, or A wiring board, comprising: a step of applying an insulating paste formed by mixing a curable resin precursor and an inorganic insulating powder; and a step of thermally curing the precursor sheet, the metal paste, and the insulating paste. Manufacturing method.
JP16864297A 1997-06-25 1997-06-25 Wiring board and manufacture thereof Pending JPH1117348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16864297A JPH1117348A (en) 1997-06-25 1997-06-25 Wiring board and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16864297A JPH1117348A (en) 1997-06-25 1997-06-25 Wiring board and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH1117348A true JPH1117348A (en) 1999-01-22

Family

ID=15871831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16864297A Pending JPH1117348A (en) 1997-06-25 1997-06-25 Wiring board and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH1117348A (en)

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US7745926B2 (en) 2002-05-30 2010-06-29 Taiyo Yuden Co., Ltd. Composite multi-layer substrate and module using the substrate
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US7348662B2 (en) 2002-05-30 2008-03-25 Taiyo Yuden Co., Ltd. Composite multi-layer substrate and module using the substrate
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WO2003103355A1 (en) * 2002-05-30 2003-12-11 太陽誘電株式会社 Composite multi-layer substrate and module using the substrate
JP2006093568A (en) * 2004-09-27 2006-04-06 Kyocera Corp Glass ceramic substrate
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JP2007019198A (en) * 2005-07-07 2007-01-25 Fujitsu Ltd Laminated substrate and electronic apparatus having the same
JP2010041045A (en) * 2008-07-09 2010-02-18 Semiconductor Energy Lab Co Ltd Semiconductor device and method for producing the same
US8563397B2 (en) 2008-07-09 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012079761A (en) * 2010-09-30 2012-04-19 Sanken Electric Co Ltd Electronic circuit device and manufacturing method thereof
JP2012079760A (en) * 2010-09-30 2012-04-19 Sanken Electric Co Ltd Electronic circuit device and manufacturing method thereof
WO2022263540A1 (en) * 2021-06-18 2022-12-22 Rolls-Royce Deutschland Ltd & Co Kg Circuit board

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