JP3292623B2 - Wiring board and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device and a wiring board used for a hybrid integrated circuit board.

[0002]

2. Description of the Related Art Hitherto, as a wiring board used for a wiring board, for example, a semiconductor element housing package for housing a semiconductor element , a laminated ceramic wiring board capable of relatively high-density wiring has been frequently used. This wiring board is made of ceramics such as an aluminum oxide sintered body, and has an insulating base having a concave portion for accommodating a semiconductor element in a central portion of an upper surface thereof, and tungsten, molybdenum, etc. led out from the periphery of the concave portion to the lower surface of the insulating base. And a semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive such as glass, resin, or brazing material, and each electrode of the semiconductor element is For example, glass is electrically connected to a wiring conductor via an electrical connection means such as a bonding wire, and thereafter, a cover made of metal, ceramics, or the like is placed on the upper surface of the insulating base so as to cover the concave portion of the insulating base. , resins, through a sealing material of the brazing material or the like is bonded, the semiconductor instrumentation as a product by housing airtightly semiconductor element in the recess of the insulation substrate To become.

The conventional wiring board is generally manufactured by a ceramic green sheet laminating method. Specifically, aluminum wiring, silicon oxide, magnesium oxide,
A plurality of ceramic green sheets are obtained by adding a suitable organic binder, a solvent, and the like to a ceramic raw material powder such as calcium oxide to form a slurry by mixing and forming the slurry into a sheet using a conventionally known doctor blade method, Thereafter, the ceramic green sheet is subjected to a suitable punching process and a metal paste to be a wiring conductor is applied by printing in a predetermined pattern, and finally, the ceramic green sheets are stacked up and down in a predetermined order to form a ceramic forming body. It is manufactured by firing the ceramic forming body at a high temperature of about 1600 ° C. in a reducing atmosphere.

[0004]

However, in this conventional wiring board, since the ceramics such as the aluminum oxide sintered body constituting the insulating base have a hard and brittle property, the automatic wiring of the transfer process and the semiconductor device manufacturing is difficult. When the wiring boards collide with each other or the wiring board and a part of the semiconductor device manufacturing automatic line violently collide with each other, chips, cracks, cracks, etc. occur in the insulating base, and as a result, the semiconductor element can be housed in an airtight manner. In addition, the semiconductor device cannot operate normally and stably for a long period of time.

Further, according to the method of manufacturing a wiring substrate, when firing the ceramic formed body, uneven firing shrinkage occurs in the ceramic formed body due to the variation in the density of the ceramic raw material powder in each ceramic green sheet. In addition, the resulting wiring board has a defect such as deformation such as warpage or dimensional variation, and a large deformation or dimensional variation leads to disconnection of the wiring conductor.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the conventional package for housing a semiconductor device. It is an object of the present invention to effectively prevent the occurrence of chipping or cracking due to the application of an impact force. It is an object of the present invention to provide a wiring board that can normally and stably operate a semiconductor element housed in a semiconductor device for a long period of time.

Another object of the present invention is to reduce the deformation such as warpage and the dimensional variation, to effectively prevent the disconnection of the wiring conductor, and to securely connect the electrodes of the semiconductor element and the like to the external electric circuit. It is an object of the present invention to provide a method for manufacturing a wiring board which can be performed.

[0008]

According to the present invention, there is provided a wiring board comprising:
0 to 95% by weight of inorganic insulating powder and 5 to 40% by weight
Comprising a thermosetting resin, wherein the inorganic insulating powder is
Precursor sheet composed of thermosetting resin precursor
Thereof a plurality are stacked and thermally cured by curing, plural linked by the thermosetting resin the inorganic insulator powder
The insulating substrate of the insulating substrate formed by laminating the insulating substrates of
Together with the precursor sheet in a semi-cured thermally cured, in which the metal powder and the conductive resin, characterized by comprising by depositing the wiring conductors more bound to the thermosetting resins.

Further, in the method for manufacturing a wiring board according to the present invention, there is provided a step of preparing a precursor sheet obtained by mixing a thermosetting resin precursor and an inorganic insulating powder, and adding a thermosetting resin to the precursor sheet. A step of printing a metal paste formed by mixing a precursor, a metal powder, and a conductive resin precursor in a predetermined pattern, and a step of heating and curing the precursor sheet, and semi-curing the precursor sheet,
The semi-cured precursor sheet on which the metal paste is printed
The precursor sheet and the metallic paste printed into a predetermined pattern by heating it with laminated bets on a plurality vertically and is characterized in that comprising a step of thermally curing.

[0010]

According to the wiring substrate of the present invention, since the insulating base is formed by bonding the inorganic insulating powder with a thermosetting resin having excellent toughness, the wiring substrates are connected to each other or to the wiring substrate and the semiconductor device manufacturing automatic line. Even if a portion of the insulating base material collides violently, the insulating substrate will not be chipped, cracked or cracked.

[0011] According to the wiring board of the present invention, the wiring conductor is formed by combining the metal powder and conductive resin in thermosetting resins, the electrical connection between the metal powder in the conductive resin As a result, the electrical resistance of the wiring conductor is reduced.

Further , according to the method for manufacturing a wiring board of the present invention,
For example, a precursor sheet formed by mixing a thermosetting resin precursor and an inorganic insulating powder, and a metal paste formed by mixing a thermosetting resin precursor, a metal powder, and a conductive resin precursor are thermoset. Since there is no firing step, there is no deformation or dimensional variation due to uneven firing shrinkage. Electrodes such as elements can be reliably electrically connected to an external electric circuit.

[0013]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment in which the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, wherein 1 is an insulating base, and 2 is a wiring conductor. The wiring substrate formed by attaching the wiring conductor 2 to the insulating base 1 is a wiring substrate.

The insulating substrate 1 comprises three insulating substrates 1a, 1
The semiconductor element 3 is formed by laminating b and 1c, and has a concave portion 1d for accommodating the semiconductor element at the center of the upper surface thereof. Adhesively fixed.

The three insulating substrates 1a, 1b, and 1c constituting the insulating base 1 are made of an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, or the like. It is formed by bonding with thermosetting resin of
Three insulating substrates 1a, 1b, 1c constituting the insulating base 1
Are formed by bonding inorganic insulating powder with a thermosetting resin having excellent toughness, so that even if an external force is applied to the insulating substrate 1,
No chipping, cracking, cracking or the like occurs.

Incidentally, three insulating substrates 1 constituting an insulating base 1 formed by bonding the inorganic insulating powder with a thermosetting resin.
a, 1b, and 1c each have a content of the inorganic insulating powder of 60% by weight.
If it is less than 1, the coefficient of thermal expansion of the insulating substrate 1 greatly differs from the coefficient of thermal expansion of the semiconductor element 3, and the semiconductor element 3 generates heat during operation, and the heat is applied to both the semiconductor element 3 and the insulating substrate 1. a large thermal stress due to the difference of thermal expansion coefficient therebetween is generated between them, or peeling the semiconductor element 3 is of an insulating substrate 1 by the large thermal stresses, cracking and chipping on the semiconductor element 3 occurs . 95% by weight
Ultra El and the inorganic insulating powder can not be completely bound with a thermosetting resin, it becomes impossible to obtain a predetermined insulating substrate 1a, 1b, and 1c. Therefore, the amount of the inorganic insulating powder contained in each of the insulating substrates 1a, 1b, and 1c constituting the insulating base 1 is specified in the range of 60 to 95% by weight.

A wiring conductor 2 is formed on the insulating base 1 from the periphery of the concave portion 1d to the lower surface. The wiring conductor 2 is made of a metal powder such as copper, silver or gold and a conductive resin such as epoxy resin. It is formed by bonding with a thermosetting resin.

The wiring conductor 2 serves to connect the electrodes of the semiconductor element 3 to an external electric circuit, and
d Each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 located at the peripheral portion via a bonding wire 4, and the portion led out to the lower surface of the insulating base 1 is electrically connected to an external electric circuit. Is done.

The wiring conductor 2 is formed by bonding a metal powder and a conductive resin with a thermosetting resin such as an epoxy resin, and the electrical connection between the metal powders is promoted by the conductive resin. Therefore, the electric resistance of the wiring conductor 2 becomes low.

When the amount of the metal powder and the conductive resin contained in the wiring conductor 2 is less than 60 % by weight based on the total weight of the wiring conductor 2, the bonding between the metal powder and the conductive resin is reduced. Is insufficient, the electrical resistance of the wiring conductor 2 increases, and 9
5 wt% tends to be difficult to bond the metal powder and conductive resin with a thermosetting resin such as ultra-El and epoxy resin. Therefore, the total amount of the metal powder and the conductive resin contained in the wiring conductor 2 is 6 to the total weight of the wiring conductor 2.
It is preferable to set it in the range of 0 to 95% by weight.

Further, the metal powder contained in the wiring conductor 2 and the average particle diameter increases the contact resistance of the resistor is increased wiring conductors 2 between happens when metal powders less than 0.5 [mu] m, also the 10μm ultra El and the insulating substrate 1 tends to be difficult to form the wiring conductors 2 of a predetermined pattern. Therefore, the metal powder contained in the wiring conductor 2 has a particle size of 0.1. 5 it is preferred that乃 keep a range of optimal 10 [mu] m.

The conductive resin contained in the wiring conductor 2 is preferably a conductive polypyrrole resin, polyparaphenylene resin, polyaniline resin or the like.

Further, the wiring conductor 2 may be formed by plating a metal having excellent corrosion resistance such as nickel and gold and having good conductivity on the exposed surface to a thickness of 1 to 20 μm by plating. And the bonding wire 4 can be firmly and electrically connected to the wiring conductor 2. Accordingly, the exposed surface of the wiring conductor 2 is coated with a metal having excellent corrosion resistance such as nickel or gold and a good conductivity by 1 to 20 μm by plating.
It is preferable to coat the layer with a thickness of m.

Thus, according to the above-described wiring board, the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1d of the insulating base 1 via an adhesive such as a resin, and each electrode of the semiconductor element 3 is wired via the bonding wire 4. After being electrically connected to the conductor 2, the lid 5 is bonded to the upper surface of the insulating base 1 via a sealing material made of resin or the like, and the semiconductor element is placed inside the container formed of the insulating base 1 and the lid 5. The semiconductor device as a product is completed by housing 3 in an airtight manner.

Next, a method of manufacturing a wiring board used in the package for housing a semiconductor element will be described.

First, as shown in FIG. 2A, three precursor sheets 11a, 11b and 11c are prepared. The three precursor sheets 11a, 11b, and 11c are formed by bonding inorganic insulating powder with a thermosetting resin precursor. For example, silicon oxide powder having a particle size of 0.1 to 100 μm is added to bisphenol A type epoxy resin, novolak type epoxy resin, epoxy resin such as glycidyl ester type epoxy resin and amine type curing agent, imidazole type curing agent, curing agent such as acid anhydride type curing agent are added and mixed to form a paste, Thereafter, the paste is formed into a sheet, and is semi-cured by heating at a temperature of about 25 to 100 ° C. for 1 to 60 minutes.

Next, as shown in FIG. 2 (b), two of the three precursor sheets 11a, 11b, 11c have the recess 1 for accommodating the semiconductor element 3 in the two precursor sheets 11a, 11b.
The openings A and A ′ serving as d are formed by two precursor sheets 11b,
11c, through holes B and B 'for routing the wiring conductor 2 are respectively formed.

The openings A and A 'and the through holes B and B' are formed by subjecting the precursor sheets 11a, 11b and 11c to a conventionally well-known punching method.
c is formed by piercing a hole of a predetermined shape in each of c.

Next, as shown in FIG. 2C, a metal paste 12 to be the wiring conductor 2 is formed on the upper and lower surfaces of the precursor sheets 11b and 11c and in the through holes B and B 'by a conventionally well-known screen printing method. It is manufactured by printing and applying a predetermined pattern and heating it at a temperature of about 25 to 100 ° C. for 1 to 60 minutes to be semi-cured.

As the metal paste 12, for example, a copper powder having a particle size of about 0.1 to 20 μm as a metal powder may be used.
A conductive Poripi b Lumpur resin, bisphenol A type epoxy resin, novolak type epoxy resins, epoxy resins and amine curing agents such as glycidyl ester type epoxy resin, imidazole curing agents, acid anhydride curing agents such as curing agent Is added and mixed to form a paste.

Finally, the three precursor sheets 11
a, 11b, and 11c are vertically stacked and heated at a temperature of about 80 to 300 ° C. for about 10 seconds to 24 hours to form a predetermined pattern on the precursor sheets 11a, 11b, and 11c and the precursor sheets 11b and 11c. By completely thermosetting the metal paste 12 printed and applied to
A wiring board used for a semiconductor element storage package in which a wiring conductor 2 is adhered to an insulating base 1 as shown in FIG. In this case, the precursor sheets 11a, 11b, 11
c and the metal paste 12 hardly shrink during thermosetting, so that there is no deformation or variation in dimensions of the obtained wiring board, no breakage of the wiring conductor is caused, and Through this, electrodes such as semiconductor elements can be reliably electrically connected to an external electric circuit.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. Is applied to a semiconductor element housing package for housing a semiconductor element, but this may be applied to a hybrid integrated circuit board or the like.

In the above embodiment, a wiring board is manufactured by laminating three precursor sheets. However, a wiring board is manufactured by using one, two, or four or more precursor sheets. You may.

[0034]

According to the wiring board of the present invention, since the insulating base is formed by bonding the inorganic insulating powder with a thermosetting resin having excellent toughness, the wiring boards are mutually connected or the wiring board and the semiconductor device are manufactured. Even if a part of the automatic line collides violently, the insulating substrate will not be chipped, cracked or cracked.

[0035] According to the wiring board of the present invention, the wiring conductor is formed by combining the metal powder and conductive resin in thermosetting resins, the electrical connection between the metal powder in the conductive resin As a result, the electrical resistance of the wiring conductor is reduced.

Further , according to the method for manufacturing a wiring board of the present invention,
For example, a precursor sheet formed by mixing a thermosetting resin precursor and an inorganic insulating powder, and a metal paste formed by mixing a thermosetting resin precursor, a metal powder, and a conductive resin precursor are thermoset. Since there is no firing step, there is no deformation or dimensional variation due to uneven firing shrinkage. Electrodes such as elements can be reliably electrically connected to an external electric circuit.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment in which a wiring board of the present invention is applied to a package for housing a semiconductor element.

FIGS. 2A to 2C are cross-sectional views for explaining steps of a method for manufacturing a wiring board according to the present invention.

[Explanation of symbols]

 1 ... Insulating base 1a, 1b, 1c ... Insulating substrate 2 ... Wiring conductors 11a, 11b, 11c ... Precursor sheet 12 ... Metal paste

────────────────────────────────────────────────── ─── Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H05K 1 / 02,1 / 03,1 / 09 H05K 3 / 12,3 / 46 H01L 23 / 12,23 / 14 H01B 1/00-1/24

Claims (2)

(57) [Claims] An inorganic insulating powder of 60 to 95% by weight and 5
Or consists of a 40 wt% of a thermosetting resin, wherein the inorganic insulation
Before bonding the edge powder with the thermosetting resin precursor
Semi-cured precursor sheets, laminating multiple sheets and heat curing
In front of an insulating substrate formed by laminating a plurality of insulating substrates obtained by bonding the inorganic insulating powder with the thermosetting resin.
The insulating substrate is thermoset together with the semi-cured precursor sheet.
It was of, distribution <br/> line substrate, characterized by comprising a metal powder and a conductive resin is applied more bound wiring conductor thermosetting resins. 2. A step of preparing a precursor sheet obtained by mixing a thermosetting resin precursor and an inorganic insulating powder; and forming a thermosetting resin precursor, a metal powder, and a conductive resin on the precursor sheet. Printing a metal paste formed by mixing the precursor with a predetermined pattern, and heating the precursor sheet to semi-curing
And the semi-cured printed metal paste
While laminating a plurality of the precursor sheets up and down,
Heated to this comprising a step of thermally curing the printed the metal paste to the precursor sheet and a predetermined pattern
And a method of manufacturing a wiring board.