JP3301907B2 - Manufacturing method of wiring board - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for housing a semiconductor element for housing a semiconductor element or a hybrid integrated circuit board.

[0002]

2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and a semiconductor element is housed in a central portion of an upper surface thereof. And a wiring conductor made of a refractory metal powder such as tungsten or molybdenum which is led out from the periphery of the recess to the lower surface of the insulating base, and a semiconductor element is formed on the bottom of the recess of the insulating base. The electrodes of the semiconductor element are electrically connected to wiring conductors via electrical connection means such as a bonding wire, and then the insulating base is adhered and fixed by an adhesive such as glass, resin, or brazing material. A lid made of metal, ceramics, or the like is placed on the top surface of the insulating base with a sealing material such as glass, resin, brazing material, etc. A semiconductor device as a product is obtained by joining the semiconductor elements in the recesses of the insulating base in an airtight manner, and connecting a portion of the wiring conductor led out to the lower surface of the insulating base to the wiring conductor of the external electric circuit board. Are electrically connected to the external electric circuit board.

Incidentally, the wiring board is generally manufactured by a ceramic green sheet laminating method, and specifically, aluminum oxide, silicon oxide, magnesium oxide,
A ceramic raw material powder such as calcium oxide is mixed with an appropriate organic binder, a solvent, and the like to form a slurry, which is formed into a sheet by employing a conventionally known doctor blade method, thereby obtaining a plurality of ceramic green sheets. Thereafter, the ceramic green sheet is subjected to a suitable punching process and a metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally, the ceramic green sheets are stacked up and down in a predetermined order to form a green ceramic molded body. It is manufactured by sintering and firing the ceramic forming body at a high temperature of about 1600 ° C. in a reducing atmosphere.

[0004]

However, in this conventional wiring board, when the ceramic forming body is fired, uneven firing shrinkage occurs in the ceramic forming body, and the resulting wiring board has deformation such as warpage. Variations in dimensions occur, and as a result, it is difficult to accurately and reliably electrically connect each electrode of the semiconductor element and the wiring conductor, or the wiring conductor and the wiring conductor of the external electric circuit board. Had disadvantages.

In the obtained wiring board, ceramics such as an aluminum oxide sintered body constituting an insulating base have a hard and brittle property, and therefore, the wiring boards are not connected to each other in a transfer step or an automatic line for manufacturing semiconductor devices. If the wiring board and a part of the automatic semiconductor device manufacturing line collide violently, the insulating substrate may be chipped, cracked, cracked, etc. There was also a disadvantage that normal and stable operation could not be achieved.

[0006]

According to the present invention, there is provided a method of manufacturing a wiring board in which a wiring conductor having a predetermined pattern is adhered to an insulating substrate, comprising a step of mixing a thermosetting resin precursor and an inorganic insulating powder. A step of preparing a body sheet, and applying, to the precursor sheet, a metal paste formed by mixing a thermosetting resin precursor and copper powder or silver powder whose surface is coated with a low melting point metal having a melting point of 300 ° C. or less. Printing on the pattern;
Heating the precursor sheet and semi-curing the same, and stacking a plurality of semi-cured precursor sheets on which the metal paste is printed and heat-treating the same to form a copper powder or a silver powder with a low melting metal. Bonding and thermosetting the thermosetting resin precursor of the precursor sheet and the thermosetting resin precursor of the metal paste to integrate them.

[0007] The production method of the present invention is characterized in that the thermosetting resin precursor of the metal paste is conductive.

Further, in the production method of the present invention, the metal paste contains at least one of a fatty acid or a metal salt thereof, a metal chelating agent, an oxydicarboxylic acid or an aminodicarboxylic acid, and a metal salt thereof. It is characterized by the following.

Still further, the production method of the present invention is characterized in that the metal paste contains a solventless diluent.

According to the method for manufacturing a wiring board of the present invention, an insulating base on which a wiring conductor is to be adhered is formed by mixing a thermosetting resin precursor and an inorganic insulating powder, and a metal paste is printed in a predetermined pattern. It is formed by laminating a plurality of semi-cured precursor sheets on top and bottom and heat-treating and thermally curing them. There is no baking step when obtaining an insulating substrate, so uneven shrinkage due to baking There is no deformation or dimensional variation due to deformation.

Further, according to the method for manufacturing a wiring board of the present invention, the metal paste is heat-treated, and the copper powder or the silver powder is bonded with the low melting point metal adhered to the surface of the copper powder or the silver powder. As a result, the wiring conductor is formed, and the bonding between the copper powder and the silver powder is made of a low melting point metal, and as a result, the electric resistance of the wiring conductor can be reduced.

Further, according to the method of manufacturing a wiring board of the present invention, when the thermosetting resin precursor used for the metal paste is made conductive, the copper powder or the silver powder is joined with a low melting point metal, When the curable resin precursor is thermally cured to form a wiring conductor, the electrical connection of the copper powder or the silver powder becomes more reliable, and the electric resistance of the wiring conductor can be made lower.

Further, according to the method for producing a wiring board of the present invention, at least one of a fatty acid or a metal salt thereof, a metal chelating agent, an oxydicarboxylic acid or an aminodicarboxylic acid and a metal salt thereof is contained in the metal paste. When it is included, when the metal paste is heat-treated to form a wiring conductor, the low-melting-point metal coating the surface of the copper powder or silver powder melts and flows out quickly, and as a result, between the copper powder or silver powder. Good bonding is achieved via the low melting point metal, and the electric resistance of the wiring conductor can be reduced.

Further, according to the method of manufacturing a wiring board of the present invention, when a solventless diluent is contained in the metal paste, the metal paste is heat-treated, and the copper powder or the silver powder is joined with the low melting point metal. At the same time, when the thermosetting resin precursor is heat-cured to form a wiring conductor, the viscosity of the thermosetting resin precursor decreases, and the melting and flowing of the low melting point metal coating the surface of the copper powder or silver powder. This facilitates the bonding via the low melting point metal between the copper powder or the silver powder, and makes it possible to reduce the electric resistance of the wiring conductor.

Further, in the wiring board obtained by the manufacturing method of the present invention, since the insulating base is formed by bonding the inorganic insulating powder with a thermosetting resin having excellent toughness, the wiring boards are connected to each other or to the wiring board. Even if a part of the automatic line for manufacturing semiconductor devices collides violently, the insulating substrate will not be chipped, cracked, cracked or the like.

[0016]

Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 shows an embodiment in which a wiring board manufactured by the manufacturing method of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, wherein 1 is an insulating base, and 2 is a wiring conductor. is there.

The insulating substrate 1 comprises three insulating substrates 1a,
The semiconductor device 3 is formed by laminating 1b and 1c, and has a concave portion 1d for accommodating a semiconductor element in the center of the upper surface, and the semiconductor element 3 is provided on the bottom surface of the concave portion 1d via an adhesive such as resin. Adhesively fixed.

An insulating substrate 1a constituting the insulating base 1;
1b and 1c are obtained by bonding an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, and zeolite with a thermosetting resin such as an epoxy resin, a polyimide resin, and a polyphenylene ether resin. The three insulating substrates 1a, 1b, and 1c constituting the insulating substrate 1 are formed by bonding inorganic insulating powder with a thermosetting resin having excellent toughness. Even when an external force is applied to the insulating substrate 1, the external force does not cause chipping, cracking, cracking or the like in the insulating substrate 1.

Incidentally, three insulating substrates 1 constituting an insulating base 1 formed by bonding the inorganic insulating powder with a thermosetting resin.
a, 1b, and 1c show that when the content of the inorganic insulating powder is less than 60% by weight, the thermal expansion coefficient of the insulating base 1 is lower than that of the semiconductor element 3.
When the semiconductor element 3 generates heat during operation and the heat is applied to both the semiconductor element 3 and the insulating base 1, the difference in thermal expansion coefficient between the two increases. Due to the large thermal stress, there is a risk that the semiconductor element 3 may be peeled off from the insulating base 1 or the semiconductor element 3 may be cracked or chipped. 9
If it exceeds 5% by weight, the inorganic insulating powder cannot be completely bonded with the thermosetting resin, and the predetermined insulating substrates 1a, 1
It is difficult to obtain b and 1c. Therefore, the insulating substrates 1a, 1b, and 1c constituting the insulating base 1 have an amount of the inorganic insulating powder contained in each of them of 60 to 95.
It is preferable to set it in the range of% by weight.

A wiring conductor 2 is formed on the insulating base 1 from the periphery of the concave portion 1d to the lower surface. The wiring conductor 2 is made of a low melting point metal having a melting point of 300.degree. Are bonded to the insulating substrate 1 via a thermosetting resin.

The wiring conductor 2 serves to electrically connect each electrode of the semiconductor element 3 housed therein to an external electric circuit. Are electrically connected via bonding wires 4, and a portion led out to the lower surface of the insulating base 1 is electrically connected to an external electric circuit.

The wiring conductor 2 is formed by joining a copper powder or a silver powder with a low melting point metal having a melting point of 300 ° C. or less, and ensures electrical connection between the copper powder or the silver powder. Can have a low electric resistance.

The exposed surface of the wiring conductor 2 is coated with a metal having excellent corrosion resistance and good conductivity, such as nickel or gold, to a thickness of 1.0 to 20.0 μm by plating. And the oxidative corrosion of the wiring conductor 2 and the wiring conductor 2 and the bonding wire 4 can be effectively prevented.
Can be firmly and electrically connected. Therefore, it is preferable that the wiring conductor 2 is coated with a metal having excellent corrosion resistance such as nickel or gold and a good conductivity to a thickness of 1.0 to 20.0 μm by a plating method on the exposed surface.

Thus, according to the wiring board of the present invention, the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1d of the insulating base 1 with an adhesive such as a resin, and each electrode of the semiconductor element 3 is bonded via the bonding wire 4. It is electrically connected to the wiring conductor 2, and finally, the lid 5 is joined to the upper surface of the insulating base 1 via a sealing material made of resin or the like, and the semiconductor is placed inside the container formed of the insulating base 1 and the lid 5. The semiconductor device as a product is completed by housing the element 3 in an airtight manner.

Next, a method of manufacturing a wiring board used in the package for housing a semiconductor element will be described with reference to FIG.

First, as shown in FIG. 2A, three precursor sheets 11a, 11b and 11c are prepared.

The three precursor sheets 11a, 11b,
11c is formed by bonding an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, and zeolite with a thermosetting resin precursor such as an epoxy resin, a polyimide resin, or a polyphenylene ether resin. For example, the particle size is 0.1
Epoxy resin such as bisphenol A type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin and amine type curing agent, imidazole type curing agent, acid anhydride type curing agent etc. to silicon oxide powder of about μm-100 μm Is added and mixed to form a paste. Thereafter, the paste is formed into a sheet and about 25 to 1
It is manufactured by heating at a temperature of 00 ° C. for 1 to 60 minutes and semi-curing.

Next, as shown in FIG. 2 (b), two of the three precursor sheets 11a, 11b, 11c have the recess 1 for accommodating the semiconductor element 3 in the two precursor sheets 11a, 11b.
The openings A and A ′ to be d are formed by two precursor sheets 11b,
11c, through holes B and B 'for routing the wiring conductor 2 are respectively formed.

The openings A and A 'and the through holes B and B'
The precursor sheets 11a, 11b, and 11c are subjected to a conventionally known punching method, and the precursor sheets 11a, 11b, and 1c are subjected to punching.
1c is formed by piercing a hole of a predetermined shape.

Next, as shown in FIG. 2C, a metal paste 12 to be the wiring conductor 2 is formed on the upper and lower surfaces of the precursor sheets 11b and 11c and in the through holes B and B 'by a screen printing method known in the art. Printing and applying in a predetermined pattern by employing a filling method.

The metal paste 12 serving as the wiring conductor 2 includes, for example, copper powder or silver powder whose surface having a particle size of about 0.1 to 20 μm is coated with a low melting point metal having a melting point of 300 ° C. or less, bisphenol A type epoxy resin,
An epoxy resin such as a novolak type epoxy resin and a glycidyl ester type epoxy resin and a curing agent such as an amine curing agent, an imidazole curing agent, and an acid anhydride curing agent are added and mixed to form a paste. .

As a low melting point metal having a melting point of 300 ° C. or less for coating the surface of the copper powder or silver powder of the metal paste 12, for example, a solder made of tin-lead is used. Copper powder or silver powder whose surface is coated with a low-melting point metal having a melting point of 300 ° C. or less, when the average particle diameter is less than 0.1 μm, the copper powder or silver powder is aggregated to obtain a uniform dispersion. When the width exceeds 50 μm, it tends to be difficult to print and form the width of the wiring conductor 2 in a generally required range of 50 μm to 200 μm. Therefore, it is preferable that the average particle diameter of the copper powder or the silver powder whose surface contained in the metal paste 12 is coated with a low melting point metal having a melting point of 300 ° C. or lower be in the range of 0.1 μm to 50 μm.

Finally, the three semi-cured precursor sheets 11a, 11b, and 11c are vertically stacked and heated at a temperature of about 300 ° C. for about 10 seconds to 24 hours to form precursor sheets 11b, 11b, and 11c. 11c, the low melting point metal covering the surface of the copper powder or silver powder of the metal paste 12 printed and applied in a predetermined pattern is melted, and the copper powder or silver powder is joined with the molten low melting point metal and the precursor is melted. The thermosetting resin precursor of the sheets 11a, 11b, 11c and the thermosetting resin precursor of the metal paste 12 are completely thermoset and integrated to form the wiring conductor 2 on the insulating base 1 as shown in FIG. Is completed. In this case, since the heat treatment temperature is 300 ° C., the low-melting-point metal is melted without thermally decomposing the thermosetting resin of the precursor sheets 11a, 11b, and 11c, and copper powder or silver powder is joined with the low-melting-point metal. be able to. In addition, the precursor sheets 11a, 11b, 11c and the metal paste 12 hardly shrink during thermosetting, so that the resulting wiring board is effectively prevented from being deformed and having a variation in dimensions, and the semiconductor element is effectively prevented. And the wiring conductor can be accurately connected.

Further, the wiring conductor 2 formed by heat-treating the metal paste 12 is a low-melting metal having a melting point of 300 ° C. or less and joins the copper powder or the silver powder. As a result, the electrical connection of the wiring conductor 2 can be reduced.

Further, when the metal paste 12 serving as the wiring conductor 2 is made of a conductive resin such as a conductive polypyrrole resin, a polyparaphenylene resin, or a polyaniline resin instead of bisphenol A type epoxy resin or novolak type epoxy resin. Then, the metal paste 12 is heat-treated to join the copper powder or the silver powder with a low melting point metal having a melting point of 300 ° C. or less covering the surface of the copper powder or the silver powder, and to heat the thermosetting resin precursor. When the wiring conductor 2 is hardened, even if there is a partial imperfection in the joining between the copper powder or the silver powder by the low melting point metal, the imperfect part is supplemented by the electrical connection by the conductive resin. As a result, the electric connection of the copper powder or the silver powder becomes more reliable, and the electric resistance of the wiring conductor 2 can be made lower.

Further, the metal paste 12 serving as the wiring conductor 2 contains therein at least one of a fatty acid or a metal salt thereof, a metal chelating agent, an oxydicarboxylic acid or an aminodicarboxylic acid, and a metal salt thereof. When the metal paste 12 is heat-treated to form the wiring conductor 2, the low-melting-point metal coating the surface of the copper powder or the silver powder melts and flows out quickly. And the electrical resistance of the wiring conductor 2 can be reduced. In this case, the fatty acid or its metal salt,
When the content of at least one of the metal chelating agent, oxydicarboxylic acid or aminodicarboxylic acid and the metal salt thereof exceeds 1.0% by weight based on the total weight of the metal paste 12, the fatty acid or the metal salt thereof is used. There is a danger that a large amount of metal chelating agent, oxydicarboxylic acid or aminodicarboxylic acid and their metal salts will remain in the wiring conductor 2 to increase the electrical resistance of the wiring conductor 2, and 0.01% by weight. If the melting point is less than 1, melting and flowing out of the low melting point metal cannot be performed quickly, and there is a risk that it is difficult to improve the bonding between the copper powder and the silver powder through the low melting point metal.

Accordingly, at least one of the fatty acid or the metal salt thereof, the metal chelating agent, the oxydicarboxylic acid or the aminodicarboxylic acid, and the metal salt thereof contained in the metal paste 12 has a content of the metal paste 1.
It is preferable that the content be in the range of 0.01% by weight to 1.0% by weight based on the total weight of 2.

When the metal paste 12 serving as the wiring conductor 2 contains a solventless diluent, specifically, glycidylamine such as O-toluidine or aniline, the metal paste 12 is heat-treated. When the copper powder or the silver powder is bonded with a low melting point metal and the thermosetting resin precursor is thermoset to form the wiring conductor 2, the viscosity of the thermosetting resin precursor is reduced, and the surface of the copper powder or the silver powder is reduced. This facilitates the melting and flow of the low-melting metal coating, thereby improving the bonding between the copper powder and the silver powder via the low-melting metal, and lowering the electric resistance of the wiring conductor 2. If this solventless diluent exceeds 10% by weight with respect to the total weight of the metal paste 12, the strength of the wiring conductor 2 becomes low and the adhesion between the wiring conductor 2 and the insulating substrates 1b and 1c becomes poor. The wiring conductor 2 is an insulating substrate 1b, 1
There is a risk of peeling from c, and 0.1% by weight
If it is less than 3, the viscosity of the metal paste 12 cannot be sufficiently reduced, and the melting and flowing of the low melting point metal coating the surface of the copper powder or the silver powder can be facilitated to reduce the melting point between the copper powder or the silver powder. There is a risk that it will be difficult to achieve good bonding through the metal. Therefore, the solventless diluent contained in the metal paste 12 is
It is preferable that the content is in the range of 0.1% by weight to 10% by weight based on the total weight of 2.

The metal paste 1 serving as the wiring conductor 2
2 indicates that when the total weight of the copper powder or silver powder and the low melting point metal having a melting point of 300 ° C. or less is less than 70% by weight based on the total weight of the metal paste 12, the joining of the copper powder or silver powder and the low melting point metal may occur. Risk of imperfection and 9
If the content exceeds 5% by weight, it becomes difficult to firmly adhere the wiring conductor 2 to the insulating base 1 with a thermosetting resin, and the wiring conductor 2 tends to be weak. Therefore, the total weight of the copper powder or silver powder and the low melting point metal contained in the metal paste 12 is preferably in the range of 70% by weight to 95% by weight based on the total weight of the metal paste 12.

Further, the copper powder or silver powder contained in the metal paste 12 and the low melting point metal having a melting point of 300 ° C. or less, the amount of the copper powder or silver powder is not more than 300 ° C. If the content is less than 20% by weight with respect to the total weight of the low melting point metal, the low melting point metal is increased relative to the copper powder or silver powder, and the low melting point metals are fused together to incorporate the copper powder or silver powder. It becomes difficult to increase the electric resistance value of the wiring conductor 2, and if it exceeds 80% by weight, the amount of the low melting point metal joining the copper powder or the silver powder becomes relatively small, and the copper powder or the silver powder Cannot be completely joined, and the electric resistance value of the wiring conductor 2 tends to increase. Therefore, the copper powder or silver powder contained in the metal paste 12 to be the wiring conductor 2 is 20% of the total weight of the copper powder or silver powder and the low melting point metal having a melting point of 300 ° C. or less.
It is preferable to set it in the range of from 80% by weight to 80% by weight.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. Although the description has been given by taking as an example the case where the wiring board is applied to a semiconductor element housing package for housing a semiconductor element, the wiring board may be applied to a wiring board used for other purposes such as a hybrid integrated circuit.

In the above-described embodiment, a wiring board is manufactured by laminating three precursor sheets. However, a wiring board is manufactured by using two or four or more precursor sheets. Is also good.

[0044]

According to the method of manufacturing a wiring board of the present invention,
An insulating substrate on which a wiring conductor is applied is formed by mixing a thermosetting resin precursor and an inorganic insulating powder, and a plurality of semi-cured precursor sheets on which a metal paste is printed in a predetermined pattern are vertically stacked. In addition, it is formed by heat-treating and heat-curing it, and since there is no baking step when obtaining the insulating substrate, there is no deformation or dimensional variation due to uneven shrinkage due to baking.

Further, according to the method of manufacturing a wiring board of the present invention, the metal paste is heat-treated, and the copper powder or the silver powder is bonded with the low melting point metal adhered to the surface of the copper powder or the silver powder. As a result, the wiring conductor is formed, and the bonding between the copper powder and the silver powder is made of a low melting point metal, and as a result, the electric resistance of the wiring conductor can be reduced.

Further, according to the method of manufacturing a wiring board of the present invention, when the thermosetting resin precursor used for the metal paste is made conductive, the copper powder or the silver powder is bonded with the low melting point metal, When the curable resin precursor is thermally cured to form a wiring conductor, the electrical connection of the copper powder or the silver powder becomes more reliable, and the electric resistance of the wiring conductor can be made lower.

Further, according to the method for producing a wiring board of the present invention, at least one of a fatty acid or a metal salt thereof, a metal chelating agent, an oxydicarboxylic acid or an aminodicarboxylic acid and a metal salt thereof is contained in the metal paste. When it is included, when the metal paste is heat-treated to form a wiring conductor, the low-melting-point metal coating the surface of the copper powder or silver powder melts and flows out quickly, and as a result, between the copper powder or silver powder. Good bonding is achieved via the low melting point metal, and the electric resistance of the wiring conductor can be reduced.

Further, according to the method of manufacturing a wiring board of the present invention, when a solventless diluent is contained in a metal paste, the metal paste is heat-treated, and copper powder or silver powder is bonded with a low melting point metal. At the same time, when the thermosetting resin precursor is heat-cured to form a wiring conductor, the viscosity of the thermosetting resin precursor decreases, and the melting and flowing of the low melting point metal coating the surface of the copper powder or silver powder. This facilitates the bonding via the low melting point metal between the copper powder or the silver powder, and makes it possible to reduce the electric resistance of the wiring conductor.

Furthermore, the wiring board obtained by the manufacturing method of the present invention is formed by bonding the inorganic insulating powder with a thermosetting resin having excellent toughness, so that the wiring boards can be connected to each other or to the wiring board. Even if a part of the automatic line for manufacturing semiconductor devices collides violently, the insulating substrate will not be chipped, cracked, cracked or the like.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment in which a wiring board manufactured by a manufacturing method of the present invention is applied to a package for housing a semiconductor element.

FIG. 2 is a diagram illustrating a method for manufacturing a wiring board according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Wiring conductor 11 ... Precursor sheet 12 ... Metal paste

Continuation of front page (56) References JP-A-4-61395 (JP, A) JP-A-7-9609 (JP, A) JP-A-4-348935 (JP, A) JP-A-5-28829 (JP) JP-A-57-113505 (JP, A) JP-A-58-121504 (JP, A) JP-A-1-294303 (JP, A) (58) Fields studied (Int. Cl. ⁷ , DB Name) H05K 1 / 02,1 / 03,1 / 09 H05K 3 / 12,3 / 46 H01L 23/12-23/15 H01B 1/00-1/24

Claims (4)

(57) [Claims] And 1. A step of mixing a thermosetting resin precursor and the inorganic insulating powder is prepared formed Ru precursor sheet, wherein the precursor sheet, a thermosetting resin precursor and the surface melting point 300 ° C.
Step and a step of semi-curing by heating the precursor sheet by mixing the following and copper powder or silver powder coated with a low melting point metal prints formed Ru metal paste in a predetermined pattern
A plurality of semi-cured precursor sheets on which the metal paste is printed are laminated one above the other and heat-treated, and copper powder or silver powder is joined with a low melting point metal, and the thermosetting properties of the precursor sheet are reduced. manufacturing a wiring board was deposited a wiring conductor in a predetermined pattern on the insulating substrate, characterized by comprising a resin precursor and the thermosetting resin precursor of the metal paste from the step of integrating is thermally cured, Method. 2. The method according to claim 1, wherein the thermosetting resin precursor of the metal paste is conductive. 3. The metal paste contains at least one of a fatty acid or a metal salt thereof, a metal chelating agent, an oxydicarboxylic acid or an aminodicarboxylic acid, and a metal salt thereof. The method for manufacturing a wiring board according to claim 1. 4. The method according to claim 1, wherein the metal paste contains a solventless diluent .
A method for manufacturing the wiring board according to any one of the above.